EP2695195A4 - Dual active layers for semiconductor devices and methods of manufacturing the same - Google Patents

Dual active layers for semiconductor devices and methods of manufacturing the same

Info

Publication number
EP2695195A4
EP2695195A4 EP12767894.4A EP12767894A EP2695195A4 EP 2695195 A4 EP2695195 A4 EP 2695195A4 EP 12767894 A EP12767894 A EP 12767894A EP 2695195 A4 EP2695195 A4 EP 2695195A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
methods
same
semiconductor devices
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12767894.4A
Other languages
German (de)
French (fr)
Other versions
EP2695195A2 (en
Inventor
Michael Marrs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona Board of Regents of ASU
University of Arizona
Original Assignee
Arizona Board of Regents of ASU
University of Arizona
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arizona Board of Regents of ASU, University of Arizona filed Critical Arizona Board of Regents of ASU
Publication of EP2695195A2 publication Critical patent/EP2695195A2/en
Publication of EP2695195A4 publication Critical patent/EP2695195A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
EP12767894.4A 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same Withdrawn EP2695195A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161472992P 2011-04-07 2011-04-07
PCT/US2012/032388 WO2012138903A2 (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same

Publications (2)

Publication Number Publication Date
EP2695195A2 EP2695195A2 (en) 2014-02-12
EP2695195A4 true EP2695195A4 (en) 2014-09-17

Family

ID=46969824

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12767894.4A Withdrawn EP2695195A4 (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same

Country Status (6)

Country Link
EP (1) EP2695195A4 (en)
JP (1) JP2014513425A (en)
KR (1) KR20130138328A (en)
CN (1) CN103548146A (en)
SG (1) SG194073A1 (en)
WO (1) WO2012138903A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
JP5832780B2 (en) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
KR102127781B1 (en) * 2013-11-29 2020-06-30 엘지디스플레이 주식회사 Thin film transistor array substrate and method for fabricating the same
WO2017034644A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
CN106663640B (en) 2014-05-13 2020-01-07 代表亚利桑那大学的亚利桑那校董会 Method of providing an electronic device and electronic device thereof
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
WO2017218898A2 (en) 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Electronic devices and related methods
CN107093557B (en) * 2017-04-26 2020-04-21 京东方科技集团股份有限公司 Manufacturing method of thin film transistor and manufacturing method of array substrate
CN108807547B (en) * 2017-05-05 2021-01-22 京东方科技集团股份有限公司 Thin film transistor and preparation method thereof, array substrate and preparation method thereof
CN107527956A (en) * 2017-08-17 2017-12-29 京东方科技集团股份有限公司 Thin film transistor (TFT) and the method for preparing thin film transistor (TFT)
CN108508643A (en) * 2018-04-03 2018-09-07 京东方科技集团股份有限公司 Display base plate and its manufacturing method, display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4177993B2 (en) * 2002-04-18 2008-11-05 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
JP4870403B2 (en) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター Thin film transistor manufacturing method
JP5064747B2 (en) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP5467728B2 (en) * 2008-03-14 2014-04-09 富士フイルム株式会社 Thin film field effect transistor and method of manufacturing the same
JP5258467B2 (en) * 2008-09-11 2013-08-07 富士フイルム株式会社 Thin film field effect transistor and display device using the same
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101362025B1 (en) * 2009-05-29 2014-02-13 아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티 Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
KR101578694B1 (en) * 2009-06-02 2015-12-21 엘지디스플레이 주식회사 Method of fabricating oxide thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same

Also Published As

Publication number Publication date
SG194073A1 (en) 2013-11-29
WO2012138903A2 (en) 2012-10-11
WO2012138903A3 (en) 2013-01-31
KR20130138328A (en) 2013-12-18
JP2014513425A (en) 2014-05-29
CN103548146A (en) 2014-01-29
EP2695195A2 (en) 2014-02-12

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