EP2695195A4 - Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication - Google Patents

Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication

Info

Publication number
EP2695195A4
EP2695195A4 EP12767894.4A EP12767894A EP2695195A4 EP 2695195 A4 EP2695195 A4 EP 2695195A4 EP 12767894 A EP12767894 A EP 12767894A EP 2695195 A4 EP2695195 A4 EP 2695195A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
methods
same
semiconductor devices
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12767894.4A
Other languages
German (de)
English (en)
Other versions
EP2695195A2 (fr
Inventor
Michael Marrs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Arizona
Arizona State University ASU
Original Assignee
University of Arizona
Arizona State University ASU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Arizona, Arizona State University ASU filed Critical University of Arizona
Publication of EP2695195A2 publication Critical patent/EP2695195A2/fr
Publication of EP2695195A4 publication Critical patent/EP2695195A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
EP12767894.4A 2011-04-07 2012-04-05 Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication Withdrawn EP2695195A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161472992P 2011-04-07 2011-04-07
PCT/US2012/032388 WO2012138903A2 (fr) 2011-04-07 2012-04-05 Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication

Publications (2)

Publication Number Publication Date
EP2695195A2 EP2695195A2 (fr) 2014-02-12
EP2695195A4 true EP2695195A4 (fr) 2014-09-17

Family

ID=46969824

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12767894.4A Withdrawn EP2695195A4 (fr) 2011-04-07 2012-04-05 Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication

Country Status (6)

Country Link
EP (1) EP2695195A4 (fr)
JP (1) JP2014513425A (fr)
KR (1) KR20130138328A (fr)
CN (1) CN103548146A (fr)
SG (1) SG194073A1 (fr)
WO (1) WO2012138903A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
KR102127781B1 (ko) * 2013-11-29 2020-06-30 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
WO2015156891A2 (fr) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Procédé de fabrication d'un dispositif à semi-conducteur souple et dispositif à semi-conducteur souple associé
WO2017034645A2 (fr) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Procédé permettant d'obtenir un dispositif électronique et dispositif électronique correspondant
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
CN106663640B (zh) 2014-05-13 2020-01-07 代表亚利桑那大学的亚利桑那校董会 提供电子器件的方法及其电子器件
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
WO2017218898A2 (fr) 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Dispositifs électroniques et procédés connexes
CN107093557B (zh) * 2017-04-26 2020-04-21 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN108807547B (zh) * 2017-05-05 2021-01-22 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及其制备方法
CN107527956A (zh) * 2017-08-17 2017-12-29 京东方科技集团股份有限公司 薄膜晶体管和制备薄膜晶体管的方法
CN108508643A (zh) 2018-04-03 2018-09-07 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4177993B2 (ja) * 2002-04-18 2008-11-05 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5467728B2 (ja) * 2008-03-14 2014-04-09 富士フイルム株式会社 薄膜電界効果型トランジスタおよびその製造方法
JP5258467B2 (ja) * 2008-09-11 2013-08-07 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
WO2010138811A2 (fr) * 2009-05-29 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Procédé permettant de fournir un dispositif à semi-conducteur flexible à températures élevées et son dispositif à semi-conducteur flexible
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101578694B1 (ko) * 2009-06-02 2015-12-21 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same

Also Published As

Publication number Publication date
SG194073A1 (en) 2013-11-29
EP2695195A2 (fr) 2014-02-12
WO2012138903A3 (fr) 2013-01-31
CN103548146A (zh) 2014-01-29
KR20130138328A (ko) 2013-12-18
JP2014513425A (ja) 2014-05-29
WO2012138903A2 (fr) 2012-10-11

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