HK1180455A1 - 具有額外有源區域的半導體裝置之間的隔離區域 - Google Patents

具有額外有源區域的半導體裝置之間的隔離區域

Info

Publication number
HK1180455A1
HK1180455A1 HK13107581.5A HK13107581A HK1180455A1 HK 1180455 A1 HK1180455 A1 HK 1180455A1 HK 13107581 A HK13107581 A HK 13107581A HK 1180455 A1 HK1180455 A1 HK 1180455A1
Authority
HK
Hong Kong
Prior art keywords
area
semiconductor devices
additional active
isolation
active area
Prior art date
Application number
HK13107581.5A
Other languages
English (en)
Inventor
戴幸志
顧克强
毛杜利
文森特．韋內齊亞
陳剛
Original Assignee
全視科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 全視科技有限公司 filed Critical 全視科技有限公司
Publication of HK1180455A1 publication Critical patent/HK1180455A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK13107581.5A 2011-09-07 2013-06-28 具有額外有源區域的半導體裝置之間的隔離區域 HK1180455A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/227,099 US8471316B2 (en) 2011-09-07 2011-09-07 Isolation area between semiconductor devices having additional active area

Publications (1)

Publication Number Publication Date
HK1180455A1 true HK1180455A1 (zh) 2013-10-18

Family

ID=47752450

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13107581.5A HK1180455A1 (zh) 2011-09-07 2013-06-28 具有額外有源區域的半導體裝置之間的隔離區域

Country Status (4)

Country Link
US (1) US8471316B2 (zh)
CN (1) CN103000643B (zh)
HK (1) HK1180455A1 (zh)
TW (1) TWI479598B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994082B2 (en) 2011-09-30 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors, methods of manufacturing thereof, and image sensor circuits with reduced RTS noise
FR2984607A1 (fr) * 2011-12-16 2013-06-21 St Microelectronics Crolles 2 Capteur d'image a photodiode durcie
JP6179865B2 (ja) * 2012-06-26 2017-08-16 パナソニックＩｐマネジメント株式会社 固体撮像装置及びその製造方法
JP6121837B2 (ja) * 2013-08-02 2017-04-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子
KR102410019B1 (ko) 2015-01-08 2022-06-16 삼성전자주식회사 이미지 센서
US9570395B1 (en) * 2015-11-17 2017-02-14 Samsung Electronics Co., Ltd. Semiconductor device having buried power rail
US10505020B2 (en) * 2016-10-13 2019-12-10 Avago Technologies International Sales Pte. Limited FinFET LDMOS devices with improved reliability
WO2019107083A1 (ja) * 2017-11-30 2019-06-06 パナソニックＩｐマネジメント株式会社 撮像装置
KR102621754B1 (ko) * 2018-11-27 2024-01-05 삼성전자주식회사 Cmos 트랜지스터를 구비한 집적회로 소자
US11502163B2 (en) * 2019-10-23 2022-11-15 Nanya Technology Corporation Semiconductor structure and fabrication method thereof
CN112382639B (zh) * 2020-10-16 2022-09-16 复旦大学 基于绝缘层上硅衬底的可调性能光电传感器及其制备方法
JP2021101491A (ja) * 2021-03-31 2021-07-08 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
US11699375B1 (en) 2022-10-18 2023-07-11 Samsung Electronics Co., Ltd. Semiconductor device and display driver IC using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217416C (zh) * 2001-07-06 2005-08-31 联华电子股份有限公司 互补式金氧半图像感测器及其制造方法
JP4751395B2 (ja) * 2005-08-31 2011-08-17 富士通セミコンダクター株式会社 フォトダイオード、固体撮像装置、およびその製造方法
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors

Also Published As

Publication number Publication date
TW201316453A (zh) 2013-04-16
CN103000643B (zh) 2016-01-20
CN103000643A (zh) 2013-03-27
US20130056808A1 (en) 2013-03-07
TWI479598B (zh) 2015-04-01
US8471316B2 (en) 2013-06-25

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