SG11201505099TA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG11201505099TA
SG11201505099TA SG11201505099TA SG11201505099TA SG11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor
device
Prior art date
Application number
SG11201505099TA
Inventor
Tatsuya Honda
Masashi Tsubuku
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011215740 priority Critical
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Priority to PCT/JP2012/074816 priority patent/WO2013047631A1/en
Publication of SG11201505099TA publication Critical patent/SG11201505099TA/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
SG11201505099TA 2011-09-29 2012-09-20 Semiconductor device SG11201505099TA (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011215740 2011-09-29
PCT/JP2012/074816 WO2013047631A1 (en) 2011-09-29 2012-09-20 Semiconductor device

Publications (1)

Publication Number Publication Date
SG11201505099TA true SG11201505099TA (en) 2015-08-28

Family

ID=47991725

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201505099TA SG11201505099TA (en) 2011-09-29 2012-09-20 Semiconductor device

Country Status (8)

Country Link
US (2) US9219160B2 (en)
JP (5) JP5279940B2 (en)
KR (2) KR20140056392A (en)
CN (3) CN105702741B (en)
DE (2) DE112012004076T5 (en)
SG (1) SG11201505099TA (en)
TW (3) TWI587525B (en)
WO (1) WO2013047631A1 (en)

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SG10201601757UA (en) 2011-10-14 2016-04-28 Semiconductor Energy Lab Semiconductor device
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
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