EP2862206A4 - Structure de substrat multicouche, et procédé et système de fabrication de celle-ci - Google Patents

Structure de substrat multicouche, et procédé et système de fabrication de celle-ci

Info

Publication number
EP2862206A4
EP2862206A4 EP13803800.5A EP13803800A EP2862206A4 EP 2862206 A4 EP2862206 A4 EP 2862206A4 EP 13803800 A EP13803800 A EP 13803800A EP 2862206 A4 EP2862206 A4 EP 2862206A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
multilayer substrate
substrate structure
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13803800.5A
Other languages
German (de)
English (en)
Other versions
EP2862206A2 (fr
Inventor
Indranil De
Francisco Machuca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tivra Corp
Original Assignee
Tivra Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/794,372 external-priority patent/US9879357B2/en
Priority claimed from US13/794,285 external-priority patent/US20130333611A1/en
Application filed by Tivra Corp filed Critical Tivra Corp
Publication of EP2862206A2 publication Critical patent/EP2862206A2/fr
Publication of EP2862206A4 publication Critical patent/EP2862206A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
EP13803800.5A 2012-06-14 2013-06-12 Structure de substrat multicouche, et procédé et système de fabrication de celle-ci Withdrawn EP2862206A4 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261659944P 2012-06-14 2012-06-14
US201261662918P 2012-06-22 2012-06-22
US13/794,372 US9879357B2 (en) 2013-03-11 2013-03-11 Methods and systems for thin film deposition processes
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
US13/794,327 US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same
PCT/US2013/045482 WO2013188574A2 (fr) 2012-06-14 2013-06-12 Structure de substrat multicouche, et procédé et système de fabrication de celle-ci

Publications (2)

Publication Number Publication Date
EP2862206A2 EP2862206A2 (fr) 2015-04-22
EP2862206A4 true EP2862206A4 (fr) 2015-12-30

Family

ID=49758884

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13803800.5A Withdrawn EP2862206A4 (fr) 2012-06-14 2013-06-12 Structure de substrat multicouche, et procédé et système de fabrication de celle-ci

Country Status (6)

Country Link
EP (1) EP2862206A4 (fr)
JP (1) JP6450675B2 (fr)
KR (1) KR20150047474A (fr)
CN (1) CN104781938B (fr)
TW (1) TWI518747B (fr)
WO (1) WO2013188574A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
CN106057641A (zh) * 2016-05-27 2016-10-26 清华大学 半导体结构以及制备半导体结构的方法
CN106057643A (zh) * 2016-05-27 2016-10-26 清华大学 半导体结构以及制备半导体结构的方法
WO2019019054A1 (fr) 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. Détecteur de rayonnement avec dispositif de dépolarisation intégré
US11947256B2 (en) 2017-08-03 2024-04-02 Asml Netherlands B.V. Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing
JP7159450B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
JP7283273B2 (ja) * 2019-07-01 2023-05-30 株式会社レゾナック 磁気記録媒体およびその製造方法ならびに磁気記録再生装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094516A1 (fr) * 2006-02-16 2007-08-23 Showa Denko K.K. DISPOSITIF SEMI-CONDUCTEUR ÉMETTEUR DE LUMIÈRE À BASE DE GaN ET SON PROCÉDÉ DE FABRICATION
JP2007294579A (ja) * 2006-04-24 2007-11-08 Showa Denko Kk ＧａＮ系半導体発光素子の製造方法及びＧａＮ系半導体発光素子、並びにランプ
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
US5597411A (en) * 1991-02-19 1997-01-28 Energy Conversion Devices, Inc. Method of forming a single crystal material
TW272319B (fr) * 1993-12-20 1996-03-11 Sharp Kk
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
EP0996967B1 (fr) * 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé pour produire des structures en couche sur un substrat à semiconducteur, substrat à semiconducteur et composants à semiconducteur produits à l'aide dudit procédé
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
AU2002228598A1 (en) * 2000-11-20 2002-06-03 Parallel Synthesis Technologies, Inc. Methods and devices for high throughput crystallization
US20030017626A1 (en) * 2001-07-23 2003-01-23 Motorola Inc. Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices
JP2003142781A (ja) * 2001-08-22 2003-05-16 Furukawa Electric Co Ltd:The 半導体レーザ素子
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device
TW591202B (en) * 2001-10-26 2004-06-11 Hermosa Thin Film Co Ltd Dynamic film thickness control device/method and ITS coating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094516A1 (fr) * 2006-02-16 2007-08-23 Showa Denko K.K. DISPOSITIF SEMI-CONDUCTEUR ÉMETTEUR DE LUMIÈRE À BASE DE GaN ET SON PROCÉDÉ DE FABRICATION
JP2007294579A (ja) * 2006-04-24 2007-11-08 Showa Denko Kk ＧａＮ系半導体発光素子の製造方法及びＧａＮ系半導体発光素子、並びにランプ
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013188574A2 *

Also Published As

Publication number Publication date
TW201405636A (zh) 2014-02-01
WO2013188574A2 (fr) 2013-12-19
TWI518747B (zh) 2016-01-21
EP2862206A2 (fr) 2015-04-22
CN104781938A (zh) 2015-07-15
KR20150047474A (ko) 2015-05-04
JP6450675B2 (ja) 2019-01-09
WO2013188574A3 (fr) 2014-05-08
CN104781938B (zh) 2018-06-26
JP2015526368A (ja) 2015-09-10

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