US20130333611A1 - Lattice matching layer for use in a multilayer substrate structure - Google Patents

Lattice matching layer for use in a multilayer substrate structure Download PDF

Info

Publication number
US20130333611A1
US20130333611A1 US13/794,285 US201313794285A US2013333611A1 US 20130333611 A1 US20130333611 A1 US 20130333611A1 US 201313794285 A US201313794285 A US 201313794285A US 2013333611 A1 US2013333611 A1 US 2013333611A1
Authority
US
United States
Prior art keywords
chemical element
lattice
matching layer
chemical
lattice matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/794,285
Inventor
Indranil De
Francisco Machuca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tivra Corp
Original Assignee
Tivra Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tivra Corp filed Critical Tivra Corp
Priority to US13/794,285 priority Critical patent/US20130333611A1/en
Assigned to Tivra Corporation reassignment Tivra Corporation ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DE, INDRANIL, MACHUCA, FRANCISCO
Priority to CN201380043629.8A priority patent/CN104781938B/en
Priority to PCT/US2013/045482 priority patent/WO2013188574A2/en
Priority to JP2015517401A priority patent/JP6450675B2/en
Priority to KR1020157000842A priority patent/KR20150047474A/en
Priority to EP13803800.5A priority patent/EP2862206A4/en
Priority to TW102121007A priority patent/TWI518747B/en
Publication of US20130333611A1 publication Critical patent/US20130333611A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Definitions

  • the example embodiments of the present invention generally pertain to semiconductor materials, methods, and devices, and more particularly to a multilayer substrate structure for epitaxial growth of group III-V compound semiconductors.
  • Group III-V compound semiconductor such as gallium nitride (GaN), gallium arsenide (GaAs), indium nitride (InN), aluminum nitride (AlN) and gallium phosphide (GaP), are widely used in the manufacture of electronic devices, such as microwave frequency integrated circuits, light-emitting diodes, laser diodes, solar cells, high-power and high-frequency electronics, and opto-electronic devices. To improve throughput and reduce manufacturing cost it is desired to increase size (e.g., diameter) of substrates.
  • GaN gallium nitride
  • GaAs gallium arsenide
  • InN indium nitride
  • AlN aluminum nitride
  • GaP gallium phosphide
  • III-V compound semiconductors of large size is very expensive a great number of foreign materials including metals, metal oxides, metal nitrides as well as semiconductors, such as silicon carbide (SiC), sapphire and silicon, are commonly used as substrates for epitaxial growth of III-V compound semiconductors.
  • semiconductors such as silicon carbide (SiC), sapphire and silicon
  • group III-V compound semiconductors e.g., GaN
  • substrates e.g., sapphire
  • crystalline quality e.g., grain boundaries, dislocations and other extended defects, and point defects
  • Differences in the coefficient of thermal expansion between the GaN layer and the underlying substrate result in large curvatures across the wafer, resulting during and post processing upon returning to room temperature, and the large mismatch in lattice constants leads to a high dislocation density, unwanted strain and defects propagating into the epitaxial GaN layer.
  • stress relaxation strategies such as growing buffer layers between the GaN layer and the sapphire substrate, or counter balancing compressive and tensile strain by alternating appropriate material layers.
  • the dislocation density may remain high and the manufacturing cost and complexity increases significantly because of the use of the same deposition techniques involved in growing the active device layers.
  • a multilayer substrate structure comprises a lattice matching layer.
  • the lattice matching layer includes a first chemical element and a second chemical element.
  • Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ⁇ - ⁇ phase transition temperature higher than the room temperature.
  • the hexagonal close-packed structure of the first chemical element has a first lattice parameter.
  • the hexagonal close-packed structure of the second chemical element has a second lattice parameter.
  • the second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature.
  • a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.
  • a method of fabricating a multilayer substrate structure comprises growing a lattice matching layer.
  • the lattice matching layer includes a first chemical element and a second chemical element.
  • Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ⁇ - ⁇ phase transition temperature higher than room temperature.
  • the hexagonal close-packed structure of the first chemical element has a first lattice parameter.
  • the hexagonal close-packed structure of the second chemical element has a second lattice parameter.
  • the second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature.
  • a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.
  • a multilayer substrate structure comprises a lattice matching layer.
  • the lattice matching layer includes a first chemical element and a second chemical element.
  • Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ⁇ - ⁇ phase transition temperature higher than the room temperature.
  • the hexagonal close-packed structure of the first chemical element has a first lattice parameter.
  • the hexagonal close-packed structure of the second chemical element has a second lattice parameter.
  • the second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature.
  • a linear relation exists between the first and second chemical elements and their associated lattice parameters at constant temperature to allow lattice constant of the alloy approximately equal to that of a group III-V compound semiconductor.
  • FIGS. 1A-1D illustrate cross-sectional views of exemplary multilayer substrate structures in accordance with exemplary embodiments
  • FIG. 2A illustrates a schematic of a hexagonal close-packed structure
  • FIG. 2B illustrates a schematic of a unit cell showing lattice constants
  • FIG. 3 illustrates a periodic table
  • FIG. 4 illustrates a phase diagram correlation between transition temperature and atomic percentage of constituent elements in accordance with an exemplary embodiment.
  • FIG. 1A illustrates a cross-sectional view of an exemplary miltilayer substrate structure 100 in accordance with an exemplary embodiment.
  • the miltilayer substrate structure 100 may include a substrate 102 and an epitaxial layer 104 epitaxially grown on the substrate 100 .
  • the substrate 102 may comprise a semiconductor material, a compound semiconductor material, or other type of material such as a metal or a non- metal.
  • the material may comprise molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides and rare earth oxides, and/or other suitable material.
  • the epitaxial layer 104 may include group III-V compound semiconductors, such as aluminum nitride (AlN), gallium nitride (GaN), indium gallium nitride (InGaN) and indium nitride (InN).
  • group III-V compound semiconductors such as aluminum nitride (AlN), gallium nitride (GaN), indium gallium nitride (InGaN) and indium nitride (InN).
  • AlN aluminum nitride
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • InN indium nitride
  • the lattice matching layer 106 may comprise two or more constituent elements, for example of two constituents, a first chemical element and a second chemical element, to form an alloy.
  • the first chemical element is miscible with the second chemical element in this alloy.
  • the constituent elements may have similar crystal structures at room temperature, such as hexagonal close-packed structure, as shown in FIG. 2A .
  • Each of the constituent elements may have its respective lattice constants including lattice parameters along a-axis, b-axis and c-axis, and lattice parameters of interaxial angles ⁇ , ⁇ and ⁇ , as shown in FIG. 2B .
  • the constituent elements may have similar chemical properties.
  • the first and second chemical elements may both belong to group four elements (namely, titanium (Ti), zirconium (Zr), hafnium (Hf) and rutherfordium (Rf)) in periodic table illustrated in FIG. 3 .
  • the alloy may be made from elements Ti and Zr, elements Ti and Hf, and elements Zr and Hf and may have similar crystal structure to the constituent elements at room temperature, or by any combination of 2.
  • the alloy may comprise a third chemical element or more elements which have similar crystal structures and similar chemical properties.
  • a linear relation may exist between the first and second chemical elements and their associated lattice parameters at constant temperature to allow the lattice constant of the lattice matching layer 106 to be approximately equal to that of the epitaxial layer 104 .
  • the mole fraction in atomic percentage of the first chemical element to the second chemical element is P 1 to (1-P 1 ).
  • the mole fraction may vary from application to application, as the composition will control the resulting lattice parameter value of the alloy.
  • atomic percentage P Zr of Zr may be greater than 75% and less than 90%. For example, P Zr may be about 86%. It follows that atomic percentage P Ti of Ti is (1-P Zr ).
  • a first lattice parameter of Zr e.g., a-axis lattice parameter a Zr
  • a second lattice parameter of Ti e.g., a-axis lattice parameter a Ti is 2.951 ⁇ .
  • the atomic percentage of the first chemical element to the second chemical element may be about 43% to 57% or 99% to 1%.
  • the constituent elements of the lattice matching layer 106 and/or the mole fractions of the constituent elements may be adjusted to make the lattice constant of the lattice matching layer 106 accommodate that of the epitaxial layer 104 .
  • the atomic percentage of Zr may be adjusted to be lower than 75% and higher than 50%.
  • the atomic percentage of Zr may be greater than 90%.
  • the thickness of the epitaxial layer 104 may cause the changes of the selection of the constituent elements as well as mole fraction of the constituent elements to achieve 100% lattice match. Despite the changes of the thickness of the epitaxial layer 104 , it may be in a range of 5 nm-500 nm. In other words, the thickness and the material of the epitaxial layer 104 may determine the selection of the constituent elements and their mole fraction in forming the lattice matching layer 106 .
  • the epitaxial layer 104 is epitaxially grown on the lattice matching layer 106 to transfer the crystallographic pattern of the lattice matching layer 106 to the epitaxial layer 104 .
  • the lattice matching layer 106 may be formed on the underlying layer, for example, the substrate 102 using one of deposition techniques, such as vacuum evaporation, sputtering, molecular beam epitaxy and pulsed laser deposition, atmospheric chemical vapor deposition, and atomic layer deposition.
  • the epitaxial deposition method such as metal organic chemical vapor deposition and atomic layer deposition and/or any other suitable methods for epitaxial growth, may be performed in a temperature range of 700° C.-850° C.
  • the miltilayer substrate structure may be heated by any heating methods/heat sources under the ⁇ - ⁇ phase transition temperature 780° C. but greater than 700° C. in an attempt to transfer the crystallographic pattern of the lattice matching layer 106 to the epitaxial layer 104 in a phase, avoiding ⁇ phase transition.
  • the temperature for heating the miltilayer substrate structure during subsequent MQW growth, along with any additional device layers, can be raised above or lowered below 780° C. since epitaxial layer 104 has been formed and is permanently set in the a phase.
  • the temperature may be initially raised above the ⁇ - ⁇ phase transition and then immediately dropped below ⁇ - ⁇ phase transition temperature to invoke generating phase transition free energy to crystallize large lateral areas resulting in single crystal ⁇ -phase in the lattice matching layer.
  • the stresses may be lowered that might otherwise occur in the epitaxial layer 104 developed during the epitaxy growth as a result of difference in lattice constants between the substrate 102 and the epitaxial layer 104 , and by doing so, aids in the growth of a high crystalline quality epitaxial layer 104 . If such stress is not relieved by the lattice matching layer, the stress may cause defects in the crystalline structure of the epitaxial layer 104 . Defects in the crystalline structure of the epitaxial layer 104 , in turn, would make it difficult to achieve a high quality crystalline structure in epitaxy for any subsequent device growth.
  • the substrate 102 may comprise a semiconductor material, a compound semiconductor material, or another type of material such as a metal or a non-metal.
  • the substrate 102 may be in the form of a polycrystalline solid.
  • Polycrystalline substrates may negatively impact the lattice matching layer 106 by making it polycrystalline instead of single crystal, thus enlarging the difference of lattice constants between the lattice matching layer 106 and the epitaxial layer 104 (an average lattice constant over multiple grains and multiple crystalline orientations), and causing extended defects such as threading dislocations or grain boundaries, leading to poor crystalline quality of the epitaxial layer 104 .
  • an amorphous layer 108 may be introduced between the polycrystalline substrate 102 and the lattice matching layer 106 , as shown in FIG. 1B .
  • the impact of the polycrystalline substrate 102 on the lattice matching layer 106 may be reduced. In this way, only crystallography of the lattice matching layer 106 is transferred to the epitaxial layer 104 .
  • the amorphous layer 108 may comprise, but not limited to, one of silicon dioxide, silicon nitride, tantalum nitride, boronitride, tungsten nitride, glassy amorphous carbon, silicate glass (e.g., borophosphosilicate glass and phosphosilicate glass) and/or other suitable materials.
  • the amorphous layer 108 may have a thickness of 5 nm to 100 nm.
  • the coefficient of thermal expansion of the substrate 102 may be different than that of the above layers, resulting in large substrate curvatures.
  • the coefficient of thermal expansion of the substrate 102 is greater than that of the above layers, biaxial compressive strain arises (e.g. when the substrate comprises sapphire).
  • the coefficient of thermal expansion of the substrate is less than that of the above layers, tensile strain arises (e.g. when the substrate comprises silicon).
  • the substrate may be used as a thermal matching layer 102 a (shown in FIGS.
  • the thermal matching layer 102 a may comprise molybdenum or its related alloys.
  • the coefficient of thermal expansion of molybdenum is about 5.4 ⁇ 10 ⁇ 6 /K which is approximately equal to that of some group III-V compound semiconductors, such as GaN.
  • the substrate may be fabricated using a variety of methods for growth of metals, crystals, and their alloys.
  • Example may include Czochralski, float zone (FZ), directional solidification (DS), zone melt recrystallization (ZMR), sintering, isostatic pressing, electro-chemical plating, plasma torch deposition, and/or other suitable methods.
  • the thermal matching layer 102 a has a thickness in a range of 5 nanometer to 1 millimeter.
  • the thermal matching layer 102 a is also disclosed in U.S. patent application entitled “A Multilayer Substrate Structure.”
  • the strain caused by the thermal expansion mismatch and lattice mismatch may be reduced or completely eliminated.
  • the dislocation density may be less than 10 2 /cm 2 ( ⁇ 100 dislocations per square centimeter) in the resulting epitaxial layer 104 .
  • the reduction or elimination of the strain may fulfill requirements to overcome the so-called “green gap.”
  • the “green gap” is an industry expression for a droop or decrease in LED light output from MQW LEDs that alloy indium with GaN to fabricate green LED's. This droop in green light outputted occurs for forward currents >50 mA in 1 to 5 square millimeter device areas due to defect density resulting from excessive strain from substrates, stress induced extended defects and point defects propagating into active MQW device layers.
  • the present embodiment enables high crystalline quality devices grown on layer 104 .
  • exemplary embodiments of the present invention qualify a cost effective manner of manufacturing a green LED crystalline template. As such, the fulfilling of the “green gap” may enhance the high performance of white light emitting diodes based on mixing light from red, green and blue, having the highest theoretical efficacies over phosphor based down conversion LEDs used today.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Electrochemistry (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims priority of provisional applications 61/662,918, filed on Jun. 22, 2012 and 61/659,944, filed on Jun. 14, 2012, the contents of which are incorporated herein by reference in their entireties.
    • TECHNICAL FIELD
  • The example embodiments of the present invention generally pertain to semiconductor materials, methods, and devices, and more particularly to a multilayer substrate structure for epitaxial growth of group III-V compound semiconductors.
    • BACKGROUND
  • Group III-V compound semiconductor, such as gallium nitride (GaN), gallium arsenide (GaAs), indium nitride (InN), aluminum nitride (AlN) and gallium phosphide (GaP), are widely used in the manufacture of electronic devices, such as microwave frequency integrated circuits, light-emitting diodes, laser diodes, solar cells, high-power and high-frequency electronics, and opto-electronic devices. To improve throughput and reduce manufacturing cost it is desired to increase size (e.g., diameter) of substrates. Because growing III-V compound semiconductors of large size is very expensive a great number of foreign materials including metals, metal oxides, metal nitrides as well as semiconductors, such as silicon carbide (SiC), sapphire and silicon, are commonly used as substrates for epitaxial growth of III-V compound semiconductors.
  • However, epitaxy growth of group III-V compound semiconductors (e.g., GaN) on substrates (e.g., sapphire) poses many challenges on crystalline quality (e.g., grain boundaries, dislocations and other extended defects, and point defects) of the epitaxial layers due to lattice mismatch and coefficient of thermal expansion mismatch between the GaN layer and the underlying substrate, a foreign material. Differences in the coefficient of thermal expansion between the GaN layer and the underlying substrate result in large curvatures across the wafer, resulting during and post processing upon returning to room temperature, and the large mismatch in lattice constants leads to a high dislocation density, unwanted strain and defects propagating into the epitaxial GaN layer. In order to cope with these problems, stress relaxation strategies are employed, such as growing buffer layers between the GaN layer and the sapphire substrate, or counter balancing compressive and tensile strain by alternating appropriate material layers. However, by adding the buffer layer or stress relieving layers, the dislocation density may remain high and the manufacturing cost and complexity increases significantly because of the use of the same deposition techniques involved in growing the active device layers.
    • BRIEF SUMMARY
  • According to one exemplary embodiment of the present invention, a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.
  • According to one exemplary embodiment of the present invention, a method of fabricating a multilayer substrate structure comprises growing a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.
  • According to one exemplary embodiment of the present invention, a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at room temperature. A linear relation exists between the first and second chemical elements and their associated lattice parameters at constant temperature to allow lattice constant of the alloy approximately equal to that of a group III-V compound semiconductor.
    • BRIEF DESCRIPTION OF THE DRAWING(S)
  • Having thus described the example embodiments of the present invention in general terms, reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and wherein:
  • FIGS. 1A-1D illustrate cross-sectional views of exemplary multilayer substrate structures in accordance with exemplary embodiments;
  • FIG. 2A illustrates a schematic of a hexagonal close-packed structure;
  • FIG. 2B illustrates a schematic of a unit cell showing lattice constants;
  • FIG. 3 illustrates a periodic table; and
  • FIG. 4 illustrates a phase diagram correlation between transition temperature and atomic percentage of constituent elements in accordance with an exemplary embodiment.
    •  DETAILED DESCRIPTION
  • The various embodiments are described more fully with reference to the accompanying drawings. These example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to readers of this specification having knowledge in the technical field. Like numbers refer to like elements throughout.
  • FIG. 1A illustrates a cross-sectional view of an exemplary miltilayer substrate structure 100 in accordance with an exemplary embodiment. The miltilayer substrate structure 100 may include a substrate 102 and an epitaxial layer 104 epitaxially grown on the substrate 100. Depending on various applications, the substrate 102 may comprise a semiconductor material, a compound semiconductor material, or other type of material such as a metal or a non- metal. For example, the material may comprise molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides and rare earth oxides, and/or other suitable material.
  • The epitaxial layer 104 may include group III-V compound semiconductors, such as aluminum nitride (AlN), gallium nitride (GaN), indium gallium nitride (InGaN) and indium nitride (InN). As described above, there may be a lattice constant mismatch between the substrate 102 and the epitaxial layer 104. To decrease or eliminate the defects resulting from the lattice constant mismatch, the epitaxial layer 104 growth on the substrate 102 may use a lattice matching layer 106 with thickness in a range of 5 nm-100 nm to accommodate the lattice constant mismatch between the substrate 102 and the epitaxial layer 104. The lattice matching layer 106 may comprise two or more constituent elements, for example of two constituents, a first chemical element and a second chemical element, to form an alloy. The first chemical element is miscible with the second chemical element in this alloy. The constituent elements may have similar crystal structures at room temperature, such as hexagonal close-packed structure, as shown in FIG. 2A. Each of the constituent elements may have its respective lattice constants including lattice parameters along a-axis, b-axis and c-axis, and lattice parameters of interaxial angles α, β and γ, as shown in FIG. 2B. In addition to the crystal structures, the constituent elements may have similar chemical properties. In one embodiment, the first and second chemical elements may both belong to group four elements (namely, titanium (Ti), zirconium (Zr), hafnium (Hf) and rutherfordium (Rf)) in periodic table illustrated in FIG. 3. In this way, the alloy may be made from elements Ti and Zr, elements Ti and Hf, and elements Zr and Hf and may have similar crystal structure to the constituent elements at room temperature, or by any combination of 2. The alloy may comprise a third chemical element or more elements which have similar crystal structures and similar chemical properties.
  • A linear relation may exist between the first and second chemical elements and their associated lattice parameters at constant temperature to allow the lattice constant of the lattice matching layer 106 to be approximately equal to that of the epitaxial layer 104. The mole fraction in atomic percentage of the first chemical element to the second chemical element is P1 to (1-P1). The mole fraction may vary from application to application, as the composition will control the resulting lattice parameter value of the alloy. In one embodiment, when the epitaxial layer 104 includes GaN and the alloy includes Ti mixed with Zr, atomic percentage PZr of Zr may be greater than 75% and less than 90%. For example, PZr may be about 86%. It follows that atomic percentage PTi of Ti is (1-PZr). A first lattice parameter of Zr, e.g., a-axis lattice parameter aZr, is 3.23 Å. A second lattice parameter of Ti, e.g., a-axis lattice parameter aTi is 2.951 Å. As a result, lattice constant PA along a-axis of the alloy is PZr×aZr+(1-PZr)×aTi=86%×3.23+14%×2.951=3.19 Å which is approximately equal to the a-axis lattice constant PGaN of hexagonal close-packed GaN where PGaN=3.189 Å. Depending on the constituent elements and other factors, the atomic percentage of the first chemical element to the second chemical element may be about 43% to 57% or 99% to 1%.
  • When the epitaxial layer 104 includes different compound semiconductors (e.g., AlN, InGaN, InN and/or other group III-V compound semiconductors), the constituent elements of the lattice matching layer 106 and/or the mole fractions of the constituent elements may be adjusted to make the lattice constant of the lattice matching layer 106 accommodate that of the epitaxial layer 104. For example, when the epitaxial layer 104 comprises AlN and the constituent elements of the lattice matching layer 106 are Zr and Ti, the atomic percentage of Zr may be adjusted to be lower than 75% and higher than 50%. In another embodiment using the same constituent elements, when the epitaxial layer 104 comprises InGaN, the atomic percentage of Zr may be greater than 90%. In addition to the material of the epitaxy layer 104, the thickness of the epitaxial layer 104 may cause the changes of the selection of the constituent elements as well as mole fraction of the constituent elements to achieve 100% lattice match. Despite the changes of the thickness of the epitaxial layer 104, it may be in a range of 5 nm-500 nm. In other words, the thickness and the material of the epitaxial layer 104 may determine the selection of the constituent elements and their mole fraction in forming the lattice matching layer 106. By using any epitaxial techniques, such as vacuum evaporation, sputtering, molecular beam epitaxy and pulsed laser deposition, metalorganic chemical vapor deposition, atomic layer deposition and/or any other suitable epitaxial deposition methods, the epitaxial layer 104 is epitaxially grown on the lattice matching layer 106 to transfer the crystallographic pattern of the lattice matching layer 106 to the epitaxial layer 104. The lattice matching layer 106 may be formed on the underlying layer, for example, the substrate 102 using one of deposition techniques, such as vacuum evaporation, sputtering, molecular beam epitaxy and pulsed laser deposition, atmospheric chemical vapor deposition, and atomic layer deposition.
  • Because hexagonal close packed phase (α phase) has potential superiority over the body centered cubic phase (β phase) for certain opto-electronic devices and power semiconductor applications, it may be desired to grow the epitaxial layer 104 in α phase to achieve similar crystallographic pattern of the lattice matching layer 106. FIG. 4 shows a correlation between the α-β phase transition temperature and the atomic percentage of Zr and Ti in accordance with an exemplary embodiment. For example, when PZr is 50%, PTi=1-PZr=50%, the α-β phase transition temperature is about 605° C. When PZr is 84%, an example that has been illustrated above, the α-β phase transition temperature may be about 780° C. In an application of fabricating multi-quantum-well (MQW) devices on the epitaxial layer 104 (e.g. ultra high brightness LEDs), the epitaxial deposition method, such as metal organic chemical vapor deposition and atomic layer deposition and/or any other suitable methods for epitaxial growth, may be performed in a temperature range of 700° C.-850° C. In this embodiment, the miltilayer substrate structure may be heated by any heating methods/heat sources under the α-β phase transition temperature 780° C. but greater than 700° C. in an attempt to transfer the crystallographic pattern of the lattice matching layer 106 to the epitaxial layer 104 in a phase, avoiding β phase transition. Then the temperature for heating the miltilayer substrate structure during subsequent MQW growth, along with any additional device layers, can be raised above or lowered below 780° C. since epitaxial layer 104 has been formed and is permanently set in the a phase. The temperature may be initially raised above the α-β phase transition and then immediately dropped below α-β phase transition temperature to invoke generating phase transition free energy to crystallize large lateral areas resulting in single crystal α-phase in the lattice matching layer.
  • By introducing the lattice matching layer 106, the stresses may be lowered that might otherwise occur in the epitaxial layer 104 developed during the epitaxy growth as a result of difference in lattice constants between the substrate 102 and the epitaxial layer 104, and by doing so, aids in the growth of a high crystalline quality epitaxial layer 104. If such stress is not relieved by the lattice matching layer, the stress may cause defects in the crystalline structure of the epitaxial layer 104. Defects in the crystalline structure of the epitaxial layer 104, in turn, would make it difficult to achieve a high quality crystalline structure in epitaxy for any subsequent device growth.
  • As described above, the substrate 102 may comprise a semiconductor material, a compound semiconductor material, or another type of material such as a metal or a non-metal. In some embodiments, the substrate 102 may be in the form of a polycrystalline solid. Polycrystalline substrates may negatively impact the lattice matching layer 106 by making it polycrystalline instead of single crystal, thus enlarging the difference of lattice constants between the lattice matching layer 106 and the epitaxial layer 104 (an average lattice constant over multiple grains and multiple crystalline orientations), and causing extended defects such as threading dislocations or grain boundaries, leading to poor crystalline quality of the epitaxial layer 104. To reduce or eliminate the negative impact of a polycrystalline substrate, an amorphous layer 108 may be introduced between the polycrystalline substrate 102 and the lattice matching layer 106, as shown in FIG. 1B. By adding the amorphous layer 108 between the polycrystalline substrate 102 and the lattice matching layer 106, the impact of the polycrystalline substrate 102 on the lattice matching layer 106 may be reduced. In this way, only crystallography of the lattice matching layer 106 is transferred to the epitaxial layer 104. The amorphous layer 108 may comprise, but not limited to, one of silicon dioxide, silicon nitride, tantalum nitride, boronitride, tungsten nitride, glassy amorphous carbon, silicate glass (e.g., borophosphosilicate glass and phosphosilicate glass) and/or other suitable materials. The amorphous layer 108 may have a thickness of 5 nm to 100 nm.
  • In some embodiments, the coefficient of thermal expansion of the substrate 102 may be different than that of the above layers, resulting in large substrate curvatures. For example, when the coefficient of thermal expansion of the substrate 102 is greater than that of the above layers, biaxial compressive strain arises (e.g. when the substrate comprises sapphire). When the coefficient of thermal expansion of the substrate is less than that of the above layers, tensile strain arises (e.g. when the substrate comprises silicon). To overcome the drawback caused by the mismatch in the coefficient of thermal expansion, the substrate may be used as a thermal matching layer 102 a (shown in FIGS. 1C and 1D) by including some chemical elements to accommodate the thermal mismatch between the substrate (namely, the thermal matching layer 102 a in this embodiment) and the lattice matching layer 106 as shown in FIG. 1C, or between the substrate and the amorphous layer 108 as shown in FIG. 1D. In one embodiment, the thermal matching layer 102 a may comprise molybdenum or its related alloys. The coefficient of thermal expansion of molybdenum is about 5.4×10−6/K which is approximately equal to that of some group III-V compound semiconductors, such as GaN. The substrate may be fabricated using a variety of methods for growth of metals, crystals, and their alloys. Example may include Czochralski, float zone (FZ), directional solidification (DS), zone melt recrystallization (ZMR), sintering, isostatic pressing, electro-chemical plating, plasma torch deposition, and/or other suitable methods. The thermal matching layer 102 a has a thickness in a range of 5 nanometer to 1 millimeter. The thermal matching layer 102 a is also disclosed in U.S. patent application entitled “A Multilayer Substrate Structure.”
  • By introducing the thermal matching layer and the lattice matching layer, the strain caused by the thermal expansion mismatch and lattice mismatch may be reduced or completely eliminated. As a result, the dislocation density may be less than 102/cm2 (<100 dislocations per square centimeter) in the resulting epitaxial layer 104. In development of light emitting diodes (LEDs), the reduction or elimination of the strain may fulfill requirements to overcome the so-called “green gap.” The “green gap” is an industry expression for a droop or decrease in LED light output from MQW LEDs that alloy indium with GaN to fabricate green LED's. This droop in green light outputted occurs for forward currents >50 mA in 1 to 5 square millimeter device areas due to defect density resulting from excessive strain from substrates, stress induced extended defects and point defects propagating into active MQW device layers.
  • Because the human eye is most sensitive to green and green light strongly affects the human perception to the quality of white light, the present embodiment enables high crystalline quality devices grown on layer 104. Moreover, exemplary embodiments of the present invention qualify a cost effective manner of manufacturing a green LED crystalline template. As such, the fulfilling of the “green gap” may enhance the high performance of white light emitting diodes based on mixing light from red, green and blue, having the highest theoretical efficacies over phosphor based down conversion LEDs used today.
  • Many modifications and other example embodiments set forth herein will bring to mind to the reader knowledgeable in the technical field to which these example embodiments pertain to having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. Therefore, it is to be understood that the embodiments are not to be limited to the specific ones disclosed and that modifications and other embodiments are intended to be included within the scope of the claims. Moreover, although the foregoing descriptions and the associated drawings describe example embodiments in the context of certain example combinations of elements and/or functions, it should be appreciated that different combinations of elements and/or functions may be provided by alternative embodiments without departing from the scope of the appended claims. In this regard, for example, different combinations of elements and/or functions other than those explicitly described above are also contemplated as may be set forth in some of the appended claims.

Claims (18)

What is claimed is:
1. A lattice matching layer for use in a multilayer substrate structure, the lattice matching layer including:
a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; and
a second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature,
wherein a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.
2. The lattice matching layer of claim 1, wherein a linear relation exists between the first and second chemical elements and their associated lattice parameters at constant temperature to allow lattice constant of the alloy approximately equal to that of the member of group III-V compound semiconductors.
3. The lattice matching layer of claim 1, wherein at least one of the first and the second chemical elements belongs to group four elements in periodic table.
4. The lattice matching layer of claim 1, wherein mole fraction of atomic percentage of the first chemical element to the second chemical element is about 14% to 86%.
5. The lattice matching layer of claim 1, wherein mole fraction of atomic percentage of the first chemical element to the second chemical element is about 43% to 57%.
6. The lattice matching layer of claim 1, wherein mole fraction of atomic percentage of the first chemical element to the second chemical element is about 99% to 1%.
7. The lattice matching layer of claim 1 further comprising a third chemical element, wherein the third chemical element has a hexagonal close-packed structure at the room temperature with similar chemical properties to the first and second chemical elements, the hexagonal close-packed structure of the third chemical element having a third lattice parameter, the third chemical element being miscible with the first and second chemical elements to form the alloy, a linear relation exists between the first, second and third chemical elements and their associated lattice parameters at constant temperature to allow lattice constant of the alloy approximately equal to that of the member of group III-V compound semiconductors.
8. The lattice matching layer of claim 1, wherein the coefficient of thermal expansion of the alloy along a plane is approximately equal to that of the member of group III-V compound semiconductors along the same plane.
9. The lattice matching layer of claim 1, wherein the group III-V compound semiconductor comprises one of aluminum nitride (AlN), gallium nitride (GaN), indium gallium nitride (InGaN) and indium nitride (InN).
10. The lattice matching layer of claim 1, wherein the lattice matching layer has a thickness in a range of 5 nm to 50 nm.
11. A method of fabricating a lattice matching layer, comprising:
a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature which transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; and
a second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with hexagonal close-packed structure at room temperature,
wherein lattice constant of the alloy is approximately equal to lattice constant of a member of group III-V compound semiconductors.
12. The method of claim 11 further comprising interpolating the coefficient of thermal expansion of the first chemical element and the coefficient of thermal expansion of the second chemical element along a plane to arrive at a first order estimate of the coefficient of thermal expansion of the alloy along the same plane, wherein the coefficient of thermal expansion of the alloy is about that of the member of group III-V compound semiconductors along the same plane.
13. The method of claim 11 further comprising heating the lattice matching layer below the α-β phase transition temperature to allow epitaxial growth of an epitaxy layer on the lattice matching layer in the a phase.
14. The method of claim 13 further comprising heating the lattice matching layer above the α-β phase transition temperature and immediately dropping below α-β phase transition temperature to invoke generating phase transition free energy to crystallize large lateral areas resulting in a single crystal a-phase in the lattice matching layer.
15. The method of claim 11 further comprising growing the lattice matching layer by one of vacuum evaporation, sputtering, molecular beam epitaxy and pulsed laser deposition, atmospheric chemical vapor deposition, and atomic layer deposition.
16. The method of claim 11 further comprising growing the lattice matching layer on a substrate and fabricating the substrate using one of Czochralski, float zone (FZ), directional solidification (DS) zone melt recrystallization (ZMR), sintering, isostatic pressing, electro-chemical plating and plasma torch deposition.
17. The method of claim 11 further comprising growing the lattice matching layer on an amorphous layer, wherein the amorphous layer comprises one of silicon dioxide, tantalum nitride, boronitride, tungsten nitride, silicon nitride, glassy amorphous carbon and silicate glass.
18. A lattice matching layer for use in a multilayer substrate structure comprising a lattice matching layer, the lattice matching layer including:
a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; and
a second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with hexagonal close-packed structure at room temperature,
wherein a linear relation exists between the first and second chemical elements and their associated lattice parameters at constant temperature to allow lattice constant of the alloy approximately equal to that of a member of group III-V compound semiconductor.
US13/794,285 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure Abandoned US20130333611A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
CN201380043629.8A CN104781938B (en) 2012-06-14 2013-06-12 Multi-layer substrate structure and the method and system for manufacturing it
PCT/US2013/045482 WO2013188574A2 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same
JP2015517401A JP6450675B2 (en) 2012-06-14 2013-06-12 Method for forming a multilayer substrate structure
KR1020157000842A KR20150047474A (en) 2012-06-14 2013-06-12 Multilayer substrate structure
EP13803800.5A EP2862206A4 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same
TW102121007A TWI518747B (en) 2012-06-14 2013-06-14 Multilayer substrate structure and method and system of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261659944P 2012-06-14 2012-06-14
US201261662918P 2012-06-22 2012-06-22
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure

Publications (1)

Publication Number Publication Date
US20130333611A1 true US20130333611A1 (en) 2013-12-19

Family

ID=49754734

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/794,285 Abandoned US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
US13/794,327 Expired - Fee Related US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/794,327 Expired - Fee Related US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same

Country Status (1)

Country Link
US (2) US20130333611A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
CN109155330A (en) * 2015-06-25 2019-01-04 帝维拉公司 Multilayered structure comprising increasing the crystal match layer of performance of semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496132B2 (en) * 2012-03-20 2016-11-15 Translucent, Inc. Nucleation of III-N on REO templates
CN104157730A (en) * 2014-07-23 2014-11-19 华北电力大学 Preparation method for monocrystalline silicon substrate germanium epitaxial thin film
US20180158672A1 (en) * 2015-06-25 2018-06-07 Tivra Corporation Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates
CN107845695B (en) * 2017-12-08 2024-01-16 苏州矩阵光电有限公司 Crystal epitaxial structure and growth method
US11923195B2 (en) 2021-03-08 2024-03-05 Samsung Electronics Co., Ltd. Single crystal semiconductor structure and method of manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017622A1 (en) * 2001-07-20 2003-01-23 Motorola, Inc. Structure and method for fabricating semiconductor structures with coplanar surfaces
US20030043872A1 (en) * 2001-08-22 2003-03-06 Mikihiro Yokozeki Semiconductor laser device
US20040177802A1 (en) * 2003-02-18 2004-09-16 Dirk Sprenger Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
US20080029773A1 (en) * 2006-08-06 2008-02-07 Jorgenson Robbie J III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597411A (en) 1991-02-19 1997-01-28 Energy Conversion Devices, Inc. Method of forming a single crystal material
US7229500B2 (en) 2000-11-20 2007-06-12 Parallel Synthesis Technologies, Inc. Methods and devices for high throughput crystallization
US20030017626A1 (en) 2001-07-23 2003-01-23 Motorola Inc. Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices
TW591202B (en) 2001-10-26 2004-06-11 Hermosa Thin Film Co Ltd Dynamic film thickness control device/method and ITS coating method
JP4933130B2 (en) 2006-02-16 2012-05-16 昭和電工株式会社 GaN-based semiconductor light-emitting device and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017622A1 (en) * 2001-07-20 2003-01-23 Motorola, Inc. Structure and method for fabricating semiconductor structures with coplanar surfaces
US20030043872A1 (en) * 2001-08-22 2003-03-06 Mikihiro Yokozeki Semiconductor laser device
US20040177802A1 (en) * 2003-02-18 2004-09-16 Dirk Sprenger Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
US20080029773A1 (en) * 2006-08-06 2008-02-07 Jorgenson Robbie J III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Beresford et al. Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source molecular beam epitaxy, Journal of Crystal Growth 178 (1997) 189-200 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
CN109155330A (en) * 2015-06-25 2019-01-04 帝维拉公司 Multilayered structure comprising increasing the crystal match layer of performance of semiconductor device

Also Published As

Publication number Publication date
US20130334568A1 (en) 2013-12-19
US8956952B2 (en) 2015-02-17

Similar Documents

Publication Publication Date Title
US8956952B2 (en) Multilayer substrate structure and method of manufacturing the same
US9691712B2 (en) Method of controlling stress in group-III nitride films deposited on substrates
CN109585269B (en) Method for preparing semiconductor single crystal substrate by using two-dimensional crystal transition layer
CN113206003B (en) Method for growing single crystal gallium nitride film on random self-supporting substrate
US9735318B2 (en) Epitaxial hexagonal materials on IBAD-textured substrates
US10546976B2 (en) Group-III nitride devices and systems on IBAD-textured substrates
TWI404122B (en) Method for enhancing growth of semi-polar (a1,in,ga,b)n via metalorganic chemical vapor deposition
US20130168833A1 (en) METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
CN111009602B (en) Epitaxial substrate with 2D material interposer, preparation method and manufacturing assembly
JP2010539732A (en) Method for increasing the area of nonpolar and semipolar nitride substrates
US9487885B2 (en) Substrate structures and methods
CN210984756U (en) Epitaxial substrate with 2D material interposer
JP2010251743A (en) Substrate for growing group-iii nitride semiconductor, group-iii nitride semiconductor device, free-standing substrate for group-iii nitride semiconductor, and method for manufacturing the same
USRE49869E1 (en) Group-III nitride devices and systems on IBAD-textured substrates
RU2750295C1 (en) Method for producing heteroepitaxial layers of iii-n compounds on monocrystalline silicon with 3c-sic layer
US8026517B2 (en) Semiconductor structures
CN107680901B (en) Flexible composite substrate for semiconductor epitaxy and manufacturing method
JP2014110431A (en) Nitride semiconductor layer growth method and nitride semiconductor element manufacturing method
TW511143B (en) Method for forming GaN/AlN superlattice structure
Dwiliński et al. AMMONO-GaN substrates for microwave and RF applications
JPH10242051A (en) Method of growing thin film semiconductor crystal

Legal Events

Date Code Title Description
AS Assignment

Owner name: TIVRA CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DE, INDRANIL;MACHUCA, FRANCISCO;SIGNING DATES FROM 20130422 TO 20130506;REEL/FRAME:030412/0003

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION