CN107680901B - Flexible composite substrate for semiconductor epitaxy and manufacturing method - Google Patents
Flexible composite substrate for semiconductor epitaxy and manufacturing method Download PDFInfo
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- CN107680901B CN107680901B CN201710890140.4A CN201710890140A CN107680901B CN 107680901 B CN107680901 B CN 107680901B CN 201710890140 A CN201710890140 A CN 201710890140A CN 107680901 B CN107680901 B CN 107680901B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Abstract
The invention belongs to the field of semiconductors, and discloses a flexible composite substrate for semiconductor epitaxy and a manufacturing method thereof, wherein two polished silicon wafers with the thickness of 100-1000 microns are taken, 0.1-5 microns of metal aluminum is evaporated or sputtered on the polished surface of each silicon wafer, and then the two silicon wafers are bonded together by bonding the aluminum on the two silicon wafers together at high temperature; in the bonding process, part of aluminum and silicon form an alloy, an aluminum layer is also remained between silicon wafers, and the thickness of the aluminum layer is less than or equal to 0.5 micrometer; thinning and polishing one of two silicon wafers bonded together to the thickness of 1-10 microns to prepare a flexible substrate; and one side of the thin silicon wafer of the flexible substrate faces upwards, and a semiconductor film material is epitaxially grown. According to the invention, the silicon substrate is made into the flexible substrate, so that the thermal adaptation between the silicon and the semiconductor film is reduced, and the stress caused by the expansion coefficient difference between the silicon and the semiconductor film is reduced.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a flexible composite substrate for semiconductor epitaxy and a manufacturing method thereof.
Background
Semiconductor light emitting devices have a wide range of applications, such as semiconductor light emitting diodes, and may be used for instrument operation status indication, traffic lights, large screen displays, lighting, and the like. In recent years, a thin film such as AlGaInN is given great attention as a silicon substrate epitaxial layer, but since a large thermal adaptation is caused by a difference in thermal expansion coefficient between the silicon substrate and an epitaxial layer such as AlGaInN and a crystal energy mismatch is caused by a difference in lattice between them, the AlGaInN or the like on the silicon substrate epitaxial layer is likely to crack and it is difficult to improve crystal quality.
In summary, the problems of the prior art are as follows: due to the difference of the thermal expansion coefficients of the silicon substrate and the epitaxial layers such as AlGaInN, great thermal adaptation is caused, the thermal adaptation is a physical problem, and the influence can be only slightly reduced through material growth and the like, so that cracks are easily generated on the epitaxial AlGaInN and the like on the silicon substrate and cannot be avoided;
the flexible composite substrate for semiconductor epitaxy can greatly reduce the thermal stress between the semiconductor material grown on the flexible substrate and the flexible substrate.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a flexible composite substrate for semiconductor epitaxy and a manufacturing method thereof.
The present invention is achieved in such a manner that a method for manufacturing a flexible composite substrate for semiconductor epitaxy includes the steps of:
taking two silicon wafers with the thickness of 100-500 microns and single-side polishing, evaporating or sputtering 0.1-5 microns of metal aluminum on the polishing surface of each silicon wafer, then adhering the two silicon wafers together by the metal aluminum surfaces in opposite directions, carrying out high-temperature bonding, and bonding the two silicon wafers together;
step two, forming alloy by part of aluminum and silicon in the bonding process, remaining an aluminum layer between silicon wafers, and controlling the thickness of the aluminum layer to be less than or equal to 0.5 micrometer through annealing and other processes;
step three, thinning and polishing one of the two silicon chips to the thickness of 1-10 microns to prepare a flexible substrate;
and fourthly, carrying out epitaxial growth on one side of the thin silicon wafer of the flexible substrate.
Further, the two silicon wafers are a thick silicon wafer and a thin silicon wafer; the thick silicon sheet of the flexible substrate is one of solar-grade silicon sheets, monocrystalline silicon sheets, gallium arsenide, indium phosphide, metal tungsten, molybdenum, tungsten-copper alloy, molybdenum-copper alloy, silicon-aluminum alloy, aluminum-silicon carbide alloy and other wafers; the selection principle is that the expansion coefficient of the material is matched with that of the semiconductor material needing epitaxial growth as much as possible.
Further, the thin silicon slice of the flexible substrate is positioned on the upper layer of the flexible substrate; the thin silicon chip of the flexible substrate or one of the monocrystalline slices of gallium arsenide, indium phosphide, gallium arsenide and aluminum gallium indium phosphide is adopted; the selection principle is that the lattice constant of the crystal is matched with the lattice constant of the semiconductor material needing epitaxial growth as much as possible.
Furthermore, a layer of sio is grown on one side of the upper layer thin silicon wafer before the formation of the metal aluminum2Or SiN as a barrier layer; and the metal Al is prevented from diffusing to the upper layer thin silicon slice and other semiconductors, and the lattice purity of the upper layer thin silicon slice and other semiconductors on the flexible composite substrate is kept.
Another objective of the present invention is to provide a flexible composite substrate for semiconductor epitaxy, wherein the upper layer of the flexible composite substrate for semiconductor epitaxy is a thin silicon wafer layer with a polished surface, the middle layer is an aluminum layer, and the lower layer is a thick silicon wafer layer; and are bonded together in sequence.
Another object of the present invention is to provide an AlGaInN semiconductor material grown using the above-described flexible composite substrate for semiconductor epitaxy.
Another object of the present invention is to provide a GaAs semiconductor material grown using the above-described flexible composite substrate for semiconductor epitaxy.
Another object of the present invention is to provide an AlGaInP semiconductor material grown using the above-described flexible composite substrate for semiconductor epitaxy.
Another object of the present invention is to provide an InP semiconductor material grown using the above flexible composite substrate for semiconductor epitaxy.
Another object of the present invention is to provide a semiconductor material such as TeCdHg grown using the above-described flexible composite substrate for semiconductor epitaxy.
The invention has the advantages and positive effects that: the silicon substrate is made into a flexible substrate, so that the thermal adaptation between the silicon and AlGaInN epitaxial films is reduced, and the stress caused by the difference of expansion coefficients between the silicon and the AlGaInN is reduced, and the main principle is as follows: when a semiconductor film is epitaxially grown on a common silicon substrate at the high temperature of 1000-1400 ℃, the silicon substrate is also subjected to high temperature, when the temperature is reduced, the thermal expansion coefficient of the grown semiconductor material is larger than that of a silicon wafer, the epitaxially grown epitaxial film is required to shrink, the expansion coefficient of silicon is small, the epitaxial film is subjected to tensile stress, when the tensile stress is large enough, the epitaxial film can only crack to release the stress, when the flexible composite substrate is used, the temperature is reduced to the melting point of silicon-aluminum alloy (about 570 ℃), the upper silicon wafer of the flexible composite substrate is just like floating on liquid, the upper silicon wafer of the flexible composite substrate is very thin, the tensile stress generated by thermal adaptation between the thin silicon wafer and the epitaxial film is insufficient to stretch crack the upper epitaxially grown semiconductor film, and when the temperature is reduced to about 570 ℃, the thermal stress caused by the temperature of 430 ℃ is avoided, when the temperature is reduced to below 570 ℃, the epitaxial film is subjected to tensile stress of the whole substrate, but the stress caused by that the temperature is reduced to the normal temperature by only 570 ℃, is greatly smaller than the stress reduced to the normal temperature from 1000 ℃, and if the thick silicon side of the flexible composite substrate is made of a material with the same expansion coefficient as a growing semiconductor, for example, if an epitaxial material AlGaInN is grown, a tungsten copper alloy with the same expansion coefficient as the growing semiconductor is adopted, the thermal stress is smaller, so that the cracks of the epitaxially grown semiconductor materials such as AlGaInN are avoided, the complexity of the epitaxial process is reduced, the crystal quality is improved, and the stability, the performance, the service life and the like of a chip are improved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a flexible composite substrate for semiconductor epitaxy according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a flexible composite substrate for semiconductor epitaxy according to an embodiment of the present invention.
In the figure: 1. a thin silicon wafer layer; 2. an aluminum layer; 3. a thick silicon wafer layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the flexible composite substrate for semiconductor epitaxy and the manufacturing method thereof according to the embodiment of the present invention include the following steps:
s101, taking two single-side polished silicon wafers with the thickness of 300-500 microns, evaporating or sputtering 0.1-2 microns of metal aluminum on the polished surface of each silicon wafer, then adhering the two silicon wafers together with the metal aluminum surfaces in opposite directions to carry out high-temperature bonding, and bonding the two silicon wafers together;
s102, forming an alloy by part of aluminum and silicon in the bonding process, and remaining an aluminum layer between silicon wafers, wherein the thickness of the aluminum layer is less than or equal to 0.5 micrometer, and the thickness of the remaining aluminum can be controlled by subsequent annealing;
s103, thinning and polishing one of the two silicon wafers to the thickness of 1-10 microns to prepare a flexible substrate;
and S104, carrying out epitaxial growth on one side of the thin silicon wafer of the flexible substrate.
One side of the thick silicon sheet of the flexible substrate can adopt wafers of solar-grade silicon wafers, gallium arsenide, indium phosphide, metal tungsten, molybdenum, tungsten-copper alloy, molybdenum-copper alloy, silicon-aluminum alloy, aluminum-silicon carbide alloy and the like, and the selection principle is that the expansion coefficient of the wafers is matched with that of a semiconductor material needing epitaxial growth as much as possible; the upper layer is a thin silicon wafer and is a monocrystalline silicon wafer.
The thin silicon chip of the flexible composite substrate can also adopt a single crystal slice of gallium arsenide, indium phosphide, gallium arsenide and aluminum gallium indium phosphide, and the selection principle is that the lattice constant of the thin silicon chip is matched with the lattice constant of a semiconductor material needing epitaxial growth as much as possible.
One side of the upper thin silicon wafer of the flexible composite substrate can grow a barrier layer such as sio before sputtering or evaporating metal aluminum2And SiN and the like, and the diffusion of metal Al to the upper layer thin silicon slice and other semiconductors is prevented, so that the lattice purity of the upper layer thin silicon slice and other semiconductors on the flexible composite substrate is kept.
The flexible composite substrate can also be used for growing semiconductor materials such as GaAs, AlGaInP, InP, TeCdHg and the like.
In the epitaxial growth process, because the aluminum and the alloy are always in a molten state, the AlGaInN film is only influenced by the upper thin silicon layer, so that the stress is small, and the crystal quality is improved. As the eutectic point of the silicon-aluminum solid solution is about 570 ℃, AlGaInN only receives the tensile stress of the upper silicon layer of a few microns before the temperature is reduced to 570 ℃, the tensile stress is not enough to crack the AlGaInN, when the temperature is reduced to room temperature from 570 ℃, the AlGaInN receives the tensile stress of the whole flexible substrate, but the tensile stress of the AlGaInN epitaxial layer is completely different from that of the AlGaInN epitaxial layer when the temperature is reduced to the room temperature from 570 ℃, and the tensile stress of the AlGaInN epitaxial layer is reduced by more than one time when the temperature is reduced to the room temperature from 1000 ℃, so that the tensile stress of the AlGaInN from the silicon substrate is greatly reduced, cracks are reduced, and the crystal quality is improved.
Fig. 2 is a schematic structural diagram of a flexible composite substrate for semiconductor epitaxy according to an embodiment of the present invention. The upper layer of the flexible composite substrate for semiconductor epitaxy is a thin silicon wafer layer 1, the middle layer is an aluminum layer 2, and the lower layer is a thick silicon wafer layer 3; and are bonded together in sequence.
The invention is further described below in connection with the positive effects.
The invention adopts the flexible substrate to grow the AlGaInN system equal-epitaxial film and has the following advantages:
1 because the invention reduces the stress of the silicon chip and the AlGaInN system film, the crystal quality is improved, the yield, the performance and the reliability of the device are naturally increased, and the production cost is reduced.
And 2, growing a thick AlGaInN epitaxial film on the flexible substrate, and then chemically etching to remove silicon to obtain the thick AlGaInN film, wherein the thick AlGaInN film can be used as a homogeneous substrate, and compared with the existing method for manufacturing the homogeneous substrate by growing the thick AlGaInN film on the sapphire by using HVPE, the method reduces the steps of cutting, polishing and the like, greatly reduces the manufacturing difficulty of the homogeneous substrate, and reduces the cost.
3, the AlGaInN system film of the existing silicon substrate epitaxy can not be thick to manufacture HEMT devices, so that the crystal quality is not high and the HEMT devices with high quality can not be manufactured easily.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A method for manufacturing a flexible composite substrate for semiconductor epitaxy is characterized by comprising the following steps:
taking two silicon wafers with the thickness of 100-500 microns and single-side polishing, evaporating or sputtering 0.1-5 microns of metal aluminum on the polishing surface of each silicon wafer, then adhering the two silicon wafers together by the metal aluminum surfaces in opposite directions, carrying out high-temperature bonding, and bonding the two silicon wafers together;
step two, forming alloy by part of aluminum and silicon in the bonding process, remaining an aluminum layer between silicon wafers, and controlling the thickness of the aluminum layer to be less than or equal to 0.5 micrometer through the annealing process;
step three, thinning and polishing one of the two silicon chips to the thickness of 1-10 microns to prepare a flexible substrate;
step four, carrying out epitaxial growth on one side of the thin silicon wafer of the flexible substrate upwards to form a semiconductor;
the two silicon wafers are a thick silicon wafer and a thin silicon wafer; the thick silicon wafer of the flexible substrate is one of a solar grade silicon wafer and a monocrystalline silicon wafer;
the thin silicon slice of the flexible substrate is positioned on the upper layer of the flexible substrate.
2. A method for manufacturing a flexible composite substrate for semiconductor epitaxy as claimed in claim 1, wherein a layer of SiO is grown on the side of the upper thin silicon wafer before the formation of the metal al2Or a SiN barrier.
3. A method of manufacturing a flexible composite substrate for semiconductor epitaxy as defined in claim 1, wherein the flexible composite substrate for semiconductor epitaxy has a thin silicon layer as an upper layer, an aluminum layer as a middle layer, and a thick silicon layer as a lower layer; and are bonded together in sequence.
4. An AlGaInN semiconductor material grown on a flexible composite substrate for semiconductor epitaxy prepared by the method for manufacturing a flexible composite substrate for semiconductor epitaxy according to claim 3.
5. A GaAs semiconductor material grown using the flexible composite substrate for semiconductor epitaxy prepared by the method for manufacturing a flexible composite substrate for semiconductor epitaxy of claim 3.
6. An AlGaInP semiconductor material grown on a flexible composite substrate for semiconductor epitaxy produced by the method for producing a flexible composite substrate for semiconductor epitaxy according to claim 3.
7. An InP semiconductor material grown on a flexible composite substrate for semiconductor epitaxy prepared by the method for manufacturing a flexible composite substrate for semiconductor epitaxy according to claim 3.
8. A TeCdHg semiconductor material grown on a flexible composite substrate for semiconductor epitaxy prepared by the method for manufacturing a flexible composite substrate for semiconductor epitaxy according to claim 3.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105070805A (en) * | 2015-08-17 | 2015-11-18 | 晶能光电（常州）有限公司 | Silicon-based nitride UV LED epitaxial structure and realizing method thereof |
| CN206441733U (en) * | 2016-09-30 | 2017-08-25 | 中山大学 | A kind of high threshold voltage high mobility notched gates MOSFET structure |
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| JP2828980B2 (en) * | 1987-12-11 | 1998-11-25 | 株式会社日立製作所 | Manufacturing method of semiconductor crystal |
| CN1315155C (en) * | 2004-03-19 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | Upper silicon structure of insulation layer and its prepn. method |
| CN101789466B (en) * | 2010-02-10 | 2011-12-07 | 上海理工大学 | method for manufacturing solar battery |
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| CN105070805A (en) * | 2015-08-17 | 2015-11-18 | 晶能光电（常州）有限公司 | Silicon-based nitride UV LED epitaxial structure and realizing method thereof |
| CN206441733U (en) * | 2016-09-30 | 2017-08-25 | 中山大学 | A kind of high threshold voltage high mobility notched gates MOSFET structure |
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