CN212967718U

CN212967718U - Gallium nitride epitaxial substrate with 2D material interposer

Info

Publication number: CN212967718U
Application number: CN202022496981.7U
Authority: CN
Inventors: 王晓靁; 施能泰; 宋高梅
Original assignee: Individual
Current assignee: Individual
Priority date: 2020-11-02
Filing date: 2020-11-02
Publication date: 2021-04-13
Anticipated expiration: 2030-11-02
Also published as: WO2022089182A1; TWM629298U

Abstract

The utility model discloses a gallium nitride epitaxial substrate with a 2D material intermediate layer, which comprises a polycrystalline AlN substrate; on the polycrystalline AlN substrate there is SiO₂A bonding layer; SiO 2₂The c-surface sapphire laminating layer is arranged on the jointing layer; a polycrystalline orientation 2D material intermediate layer is grown on the c-surface sapphire laminating layer, at least one top layer of the polycrystalline orientation 2D material intermediate layer is arranged, and the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; growing GaN single crystal epitaxial layer by Van der Waals epitaxy on the polycrystalline oriented 2D material intermediate layer, or growing Al by Van der Waals epitaxyAn N or AlGaN nucleation auxiliary layer, and a GaN single crystal epitaxial layer is arranged on the AlN or AlGaN nucleation auxiliary layer. The utility model avoids the transfer process of the 2D material medium layer and possible quality influence, effectively overcomes the defect quality problem of the gallium nitride layer caused by the mismatching of heteroepitaxial crystal lattices, and can relieve the thermal stress problem caused by different thermal expansion coefficients; the method is favorable for growing high-quality AlN, AlGaN and GaN epitaxial layers so as to manufacture GaN-based photoelectric and semiconductor components with equal wide energy gaps.

Description

Gallium nitride epitaxial substrate with 2D material interposer

Technical Field

The utility model relates to a gallium nitride epitaxial substrate with 2D material interposer.

Background

Epitaxy has a significant impact on the quality of the product during the fabrication of photovoltaic and semiconductor devices. The quality effects include device performance, yield, reliability, and lifetime. Generally, the substrate material is desirably a single crystal material that minimizes the defect density, and crystal quality is not affected during epitaxy as much as possible when the crystal structure, lattice constant (lattice constant), and Coefficient of Thermal Expansion (CTE) are matched to the epitaxial material. In recent years, the third generation semiconductor technology and the market are rapidly developed along with the requirements of power and high frequency semiconductor components, and the supply of high-quality epitaxial substrates of silicon carbide and gallium nitride at two main angles of the third generation semiconductor materials is relied on as the basis of quality improvement. Unlike the gallium nitride-based LED which mainly uses a sapphire substrate, the most commonly used gallium nitride substrates according to the current technology are two substrates, namely, gallium nitride (GaN-on-Si) and gallium nitride on silicon carbide (GaN-on-SiC) on a silicon wafer.

The main reason is derived from the current cost and size limitations of the gallium nitride single crystal technology development. In other words, if a single crystal substrate of the above two materials is directly produced by a melt-growth method, not only the production cost is increased, but also relatively more waste heat is generated, which causes unavoidable environmental pollution. In the Vapor Phase growth process, the Hydride Vapor Phase Epitaxy (HVPE) method is currently used for growing gallium nitride crystals to produce single-crystal gallium nitride substrates, and due to the limitations of production cost and yield conditions, the current mass production technology reaches 4 inches of substrates and the cost is extremely high. In fact, the defect density of the vapor phase method is still higher than that of other liquid phase crystal growth processes, but the crystal growth rate of the rest processes is too slow, the volume production cost is higher, and the commercial main flow is still limited to the HVPE method under the consideration of market demand, device performance and substrate cost and supply trade-off. The literature indicates that the vapor phase method GaN growth rate still has the possibility of increasing several times and maintaining good crystallinity, but is limited by the deterioration of defect density and is not currently oriented to reduce the cost of GaN substrates. As for the aluminum nitride crystal growth technology, a Physical Vapor Transport (PVT) method, which is one of Vapor phase methods, is used to produce the single crystal aluminum nitride substrate, because of the limitations of production technology and yield, only two manufacturers have mass production capability globally, the cost is very high when the current mass production technology only reaches 2 inches of substrates, and the capacity cannot be widely supplied to the market because of the occupation of a few manufacturers. Due to the chemical characteristics of aluminum nitride and the limitation of hardware components by a physical vapor transport method, carbon (C) and oxygen (O) impurities exist in a single crystal finished product to a certain degree inevitably, and the component characteristics are also influenced to a certain degree.

TABLE 1

Similarly, there are also existing silicon carbide (SiC) single crystals, silicon carbide substrates are the substrate materials of high-performance power semiconductors and high-end light emitting diodes at present, the single crystal growth process is Physical Vapor Transport (PVT) in the Vapor phase method, the growth technology of high-quality large-size silicon carbide single crystals is difficult, the high-end mass production technology is mastered by a few manufacturers, and there is still much room for improvement in the influence on the application cost. Gallium nitride on silicon carbide (GaN-on-SiC) is a high-quality gallium nitride epitaxial substrate, but for the above reasons, the large-size substrate has the problems of high price, limited supply amount, technical mastery in hands of a few manufacturers and the like; in contrast, silicon substrates are large in size, low in cost, high in productivity and stable in quality, and gallium nitride (GaN-on-Si) substrates on silicon wafers are more popular and are of interest to relevant manufacturers.

Two substrate technologies of gallium nitride (GaN-on-Si) and gallium nitride (GaN-on-SiC) on silicon wafer belong to heterojunction epitaxial technology in the aspect of epitaxial process, heteroepitaxy needs to overcome the problem of lattice matching between different materials and the problem of thermal stress between epitaxial layer and substrate caused by different thermal expansion coefficients, and the GaN-on-SiC has higher quality than the GaN-on-Si because the degree of lattice mismatch (lattice mismatch) of GaN-on-SiC is smaller than that of GaN-on-Si; another important characteristic is that the gallium nitride layer has a significant tensile stress on the silicon surface, and the stress is higher when the thickness of the gallium nitride layer is increased, so that the bending deformation of the substrate and even the gallium nitride layer can crack, and the related effect is more serious as the size of the wafer is increased. The difficulty of the related technology leads to generally low yield of GaN-on-Si, and the GaN-on-Si is mostly applied to power supply products, the mass production is mainly six inches at present, and the advantage of large size of silicon wafers cannot be fully exerted.

Two-dimensional (2D) materials are an emerging field of rapid development, the earliest attracting mass development and investment in the 2D material family is also known as graphene (graphene), the two-dimensional layered structure of graphene has special or excellent physical/chemical/mechanical/photoelectric properties, and there is no strong bonding between layers, and the two-dimensional layered structure is only bonded by van der waals force, which also means that there is no dangling bond (dangling bond) on the surface of the layered structure, and graphene is currently identified to have wide and excellent application potential; graphene development work is widely carried out all over the world, and simultaneously, the development of more 2D materials is also driven, including hexagonal Boron nitride hbn (hexagonal Boron nitride), transition metal dichalcogenides tmds (transition metal dichalcogenides), black phosphorus and the like are also accumulated more research and development achievers in the 2D material family, the materials respectively have specific material characteristics and application potential, and the development of the manufacturing technology of the related materials is also actively promoted. MoS of one of graphene, hBN and TMDs material in addition to excellent photoelectric characteristics₂Are considered to have excellent diffusion barrier properties and varying degrees of high temperature stability, and in particular hBN is considered to have excellent chemical inertness (inertness) and high temperature oxidation resistance.

Due to the nature of the layered structure and the inter-layer van der waals bonding characteristics, the technical feasibility of fabricating two or more materials in the 2D family of materials into a layered-stacked heterostructure (hetero-structure) is greatly expanded, the heterostructure can create new application characteristics or fabricate new components in addition to combining different characteristics, and the research and development in the fields of photoelectricity and semiconductors are very active at present. In particular, it may be a mechanically composed layer, or it may be a physical or chemical vapor deposition.

The van der Waals force binding property of 2D materials has also gained attention for the application of epitaxial substrates to conventional 3D materials, focusing on the fact that epitaxial materials in epitaxial technology must match very well with substrate materials in terms of crystal structure, lattice constant (lattice constant), Coefficient of Thermal Expansion (CTE), but in reality they are often subject to conditions such as lack of suitability for substrate materials as the subject of the present invention, or ideal substrate materials are either more costly or not readily available, when 2D materials offer another solution for heteroepitaxial substrates, namely the so-called van der Waals epitoxy. The mechanism by which van der waals epitaxy may benefit heteroepitaxy is that the direct chemical bonding at the conventional epitaxial interface is replaced by van der waals bonding, which will relieve the lattice and thermal expansion mismatch stress or strain energy from the epitaxy process to some extent, thus improving the quality of the epitaxial layer, or by introducing 2D materials and van der waals epitaxy, some heteroepitaxy techniques that were not practical previously are possible. Related studies have also shown that when the above 2D materials are stacked on top of each other in a heterostructure, the interaction forces are dominated by van der waals forces; when the Epitaxy of the 3D material is performed on the 2D material, the Epitaxy is not substantially pure van der Waals epitaxiy (van der Waals epitaxiy) or more precisely can be regarded as Quasi van der Waals epitaxiy (Quasi van der Waals epitaxiy) because the existence of dangling bonds (dangling bonds) of the 3D material on the interface simultaneously contributes to the bonding force of the interface; in any case, the degree of lattice and thermal expansion matching still certainly contributes to the final epitaxial quality, and the overall matching degree is contributed by the 2D material interposer and the substrate material. The 2D layered material has a hexagonal or honeycomb structure, and is compatible with Wurtzite (Wurtzite) and zincblende (Zinc-blend) structure materials in terms of external delay time, and the main epitaxial materials in the related field of the invention belong to the structure.

Based on the application of an epitaxial substrate, a single crystal (single crystal) is one of the requirements for ensuring the epitaxial quality, the crystal orientation of a general 2D material is often correlated with that of a crystalline substrate in a nucleation stage, when the substrate adopts a general metal foil, the 2D material has a polycrystalline structure, the direction of the 2D material is not consistent in the nucleation stage, and after the crystal nuclei are polymerized into a continuous film along with growth, blocks (domains) with different orientations are still present instead of single crystals; when the substrate is made of single crystal material such as sapphire, the specific nucleation direction possibly occurring due to the symmetrical correlation of the two structures is not unique, and a single crystal continuous film cannot be formed. Recent research has found that when the copper foil is subjected to heat treatment to form a copper foil with a specific lattice orientation by improving the existing process, anisotropic lattice blocks (domains) formed during the growth of 2D graphene and hexagonal boron nitride (hBN) materials can be eliminated, and a continuous film of single crystal graphene and hexagonal boron nitride can be grown.

Recent studies have pointed out that a layered MoS having good crystallinity can be grown on the surface of a single-crystal c-plane sapphire by CVD or the like₂、WS₂、MoSe₂、WSe₂The TMD materials have two crystal orientations (crystal orientations) (0 ℃ and 60 ℃) in the grown TMD materials (reference: Nature 2019, v.567, 169-170). The AlGaN and GaN materials of interest for the present invention have a crystal structure with hexagonal symmetry at the epitaxial junction, and the TMD layer does not constitute a single crystal layer, but theoretically does not prevent the AlGaN and GaN epitaxial layers from forming a single crystal when used as an epitaxial substrate. When the two-dimensional material layer is applied to the surface of a substrate except sapphire at present, the two-dimensional material layer grown on the surface of high-quality sapphire is usually transferred to the surface of other substrates through a transfer procedure; when the two-dimensional material layer grown on the surface of the high-quality sapphire is directly applied without transfer, the possible quality influence of the two-dimensional material layer, such as defects, wrinkles, surface pollutant residues and the like, caused by the transfer process can be theoretically avoided.

Gallium nitride (GaN-on-Si) on a prior art silicon wafer is shown in fig. 1. Heteroepitaxy needs to solve the problem of lattice matching between different materials and the problem of thermal stress between an epitaxial layer and a substrate due to different thermal expansion coefficients, and the defect density of a gallium nitride layer in the epitaxial process is high due to the fact that the degree of GaN-on-Si lattice mismatching (lattice mismatch) is high; another important characteristic is that the gallium nitride layer has a significant tensile stress on the silicon surface, and the stress is higher when the thickness of the gallium nitride layer is increased, so that the bending deformation of the substrate and even the gallium nitride layer can crack, and the related effect is more serious as the size of the wafer is increased. The difficulty of the related technology leads to generally low yield of GaN-on-Si, and the GaN-on-Si is mostly applied to power supply products, the mass production is mainly six inches at present, and the advantage of large size of silicon wafers cannot be fully exerted.

Gallium nitride on Sapphire (GaN-on-Sapphire) of the prior art, as shown in fig. 2. Heteroepitaxy needs to overcome the problem of lattice matching between different materials and the problem of thermal stress caused by different thermal expansion coefficients between an epitaxial layer and a substrate, and the defect density of a gallium nitride layer in the epitaxial process is in a certain level due to high degree of GaN-on-Sapphire lattice mismatch, so that the heteroepitaxy still has an irreplaceable status under the long-term commercial technology development of the light emitting diode; however, in the field of high frequency and power semiconductors, the use of GaN-on-Sapphire (GaN-Sapphire) is hindered due to the low thermal conductivity of Sapphire.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems existing in the prior art, the utility model provides a gallium nitride epitaxial substrate with a 2D material interposer.

The utility model discloses a solution as follows:

a gallium nitride epitaxial substrate with a 2D material interposer, comprising a polycrystalline AlN substrate; on the polycrystalline AlN substrate there is SiO₂A bonding layer; SiO 2₂The c-surface sapphire laminating layer is arranged on the jointing layer; a polycrystalline orientation 2D material intermediate layer is grown on the c-surface sapphire laminating layer, the polycrystalline orientation 2D material intermediate layer at least has a top layer, and the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; a GaN single crystal epitaxial layer grows on the polycrystalline direction 2D material intermediate layer through Van der Waals epitaxy, or an AlN or AlGaN nucleation auxiliary layer grows on the polycrystalline direction 2D material intermediate layer through Van der Waals epitaxy, and a GaN single crystal epitaxial layer is arranged on the AlN or AlGaN nucleation auxiliary layer.

The 2D material interposer is greater than 0.5nm thick.

The thickness of the c-surface sapphire laminating layer is larger than 10 nm.

The 2D material intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.

The 2D material intermediate layer is of a single-layer structure and only has a top layer, and the top layer is made of a 2D material suitable for GaN, AlGaN or AlN epitaxy.

The 2D material intermediate layer is of a composite layer structure formed by a top layer and a bottom layer, the top layer is made of 2D materials suitable for GaN, AlGaN or AlN epitaxy, and the bottom layer is made of 2D materials suitable for serving as a single crystal base layer.

Said top layer employing WS₂Or MoS₂(ii) a The bottom layer adopts hBN.

The mismatching degree of the lattice constant a of the top layer of the single-layer structure or the composite-layer structure of the 2D material intermediate layer and AlN, AlGaN or GaN is not more than 20%, and the 2D material intermediate layer is suitable for AlN, AlGaN or GaN epitaxy.

At least the top layer of the polycrystalline orientation 2D material intermediate layer is composed of two crystalline regions (domains) which are in 60-degree angle matching directions with each other.

After the scheme is adopted, the utility model discloses with the high quality single crystal c face (c-plane) sapphire laminating thin layer joint on polycrystal AlN base plate surface after the cutting, can directly grow the good stratiform of crystallization nature and have two kinds (0 and 60) to the directional polycrystalline to 2D material intermediate layer of crystallization area (domain), avoided transfer process and possible quality influence; the substrate with the surface layer lattice constant highly matched with AlN, AlGaN and GaN is formed, so that the defect quality problem of a gallium nitride layer caused by lattice mismatch of heteroepitaxy can be effectively solved; the nature of the van der waals interface may alleviate thermal stress problems due in part to the difference in thermal expansion coefficients. Because only the sapphire laminating layer is adopted and the joint main body is the polycrystalline AlN substrate with excellent heat conduction performance, the whole substrate framework and the assembly heat dissipation performance can be maintained at a good level. Therefore, the substrate structure of the present invention is advantageous for containing growing high quality AlN, AlGaN, and GaN epitaxial layers to perform fabrication of wide bandgap photovoltaics and semiconductor devices of GaN systems and the like.

Drawings

FIG. 1 is a schematic diagram of a gallium nitride (GaN-on-Si) structure on a silicon wafer according to the prior art;

FIG. 2 is a schematic view of a prior art GaN-on-Sapphire structure;

fig. 3 is a schematic structural diagram of an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of a second embodiment of the present invention;

FIG. 5 is a schematic diagram of a third embodiment of the present invention;

fig. 6 is a schematic diagram of a fourth structure according to the embodiment of the present invention.

Description of the reference symbols

Polycrystalline AlN substrate 1, SiO₂The bonding layer 2, the sapphire laminating layer 3, the top layer 41 and the bottom layer 42 of the 2D material intermediate layer, the GaN single crystal epitaxial layer 5 and the AlN or AlGaN nucleation auxiliary layer 6.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

Referring to fig. 3 to 6, the gan epitaxial substrate with 2D material interposer according to the present invention includes a polycrystalline AlN substrate 1. Polycrystalline AlN substrate 1 having SiO thereon₂And a bonding layer 2. SiO 2₂The c-plane sapphire laminating layer 3 is arranged on the jointing layer 2. The thickness of the c-plane sapphire laminating layer 3 is preferably larger than 10 nm. And a polycrystalline 2D material intermediate layer is grown on the c-surface sapphire laminating layer 3. The 2D material intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy. The preferred design of the 2D material interposer is greater than 0.5nm thick. The multi-crystal orientation 2D material intermediate layer at least has a top layer 41, and the lattice constant of the top layer 41 is highly matched with AlN, AlGaN or GaN. The GaN single crystal epitaxial layer 5 is directly grown on the top layer 41 of the polycrystalline orientation 2D material intermediate layer through Van der Waals epitaxy, or an AlN or AlGaN nucleation auxiliary layer 6 is firstly grown on the top layer 41 of the polycrystalline orientation 2D material intermediate layer through Van der Waals epitaxy, and then the GaN single crystal epitaxial layer 5 is arranged on the AlN or AlGaN nucleation auxiliary layer 6.

Specifically, as shown in the first embodiment shown in fig. 3 and the third embodiment shown in fig. 5, the 2D material interposer is a single-layer structure and has only a top layer 41, and the top layer 41 is a 2D material suitable for GaN, AlGaN, or AlN epitaxy. In the first embodiment, GaN single crystal epitaxial layer 5 is grown directly on top layer 41 by van der waals epitaxy. In the third embodiment, an AlN or AlGaN nucleation auxiliary layer 6 is first grown on the top layer 41 by van der waals epitaxy, and a GaN single crystal epitaxial layer 5 is then formed on the AlN or AlGaN nucleation auxiliary layer 6.

As shown in fig. 4 of the second embodiment and fig. 6 of the fourth embodiment, the 2D intermediate layer is a composite layer structure formed by a top layer 41 and a bottom layer 42, the top layer 41 is a 2D material suitable for GaN, AlGaN, or AlN epitaxy, and the bottom layer 42 is a 2D material suitable for being a single crystal base layer. In the third embodiment, GaN single crystal epitaxial layer 5 is grown directly on top layer 41 by van der waals epitaxy. In the fourth embodiment, the AlN or AlGaN nucleation auxiliary layer 6 is first grown on the top layer 41 by van der waals epitaxy, and then the GaN single crystal epitaxial layer 5 is formed on the AlN or AlGaN nucleation auxiliary layer 6.

Top layer 41 is a 2D layer meeting the requirements of lattice constant matching and the like, such as adopting WS₂Or MoS₂The bottom layer 42 is a 2D layer suitable as a base layer, such as hBN, but not limited to the above materials.

TABLE 2

Material	Lattice constant a (nm)
		Hexagonal boron nitride hBN	0.25
Graphene	0.246
		WS₂	0.318
MoS₂	0.3161
		WSe₂	0.3297
MoSe₂	0.3283

The 2D material intermediate layer is of a single-layer structure or a composite-layer structure, the mismatching degree of the lattice constant a of the top layer 41 and AlN, AlGaN or GaN is not more than 20%, and the 2D material intermediate layer is suitable for AlN, AlGaN or GaN epitaxy. At least the top layer 41 of the multi-orientation 2D material interposer is composed of two crystalline regions (domains) that are aligned at an angle of 60 degrees with respect to each other.

The utility model discloses preparation method of gallium nitride GaN-on-Si epitaxial substrate on silicon with 2D material intermediate layer, the step is as follows:

step 1, taking a polycrystalline AlN substrate 1 with a polished surface as a starting material, and carrying out appropriate processing (including thin film evaporation, chemical mechanical polishing, spin-on-glass, heat treatment and the like) to ensure that the surface of the substrate is highly flattened as preparation for a subsequent manufacturing procedure; SiO 2₂The junction layer 2 is covered on the polycrystalline AlN substrate 1;

step 2, transferring and jointing the c-surface sapphire laminating layer 3 from the surface of the c-surface sapphire wafer to the SiO on the surface of the polycrystalline AlN substrate 1 by using the existing process technology₂On the junction layer 2;

step 3, growing a multi-crystal-orientation 2D material intermediate layer on the surface of the c-plane sapphire chip by using the existing manufacturing process;

step 4, utilizing the Van der Waals epitaxy technology, and continuing to perform subsequent GaN epitaxy on the polycrystalline AlN substrate 1 with the polycrystalline orientation 2D material intermediate layer on the surface in the step 3; or coating the AlN or AlGaN nucleating layer and continuing to perform GaN epitaxy.

The utility model discloses with the help of the application of sapphire single crystal layer surface direct growth polycrystal to 2D material heterojunction intermediary layer and Van Der Waals Epitaxy (VDWE), form top layer lattice constant and AlN, AlGaN and GaN high matching's base plate. The utility model effectively overcomes the defect quality problem of gallium nitride layer caused by mismatching of heteroepitaxial crystal lattices; the problem of thermal stress caused by different thermal expansion coefficients is relieved. The utility model discloses whole substrate framework and subassembly heat dispersion can maintain good level, are favorable to being used for containing growing high quality AlN, AlGaN and GaN epitaxial layer to carry out the preparation of wide energy gap photoelectricity and semiconductor component such as GaN system.

The foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. It should be noted that after reading this description, those skilled in the art can make equivalent changes according to the design concept of the present application, which fall within the protection scope of the present application.

Claims

1. Gallium nitride epitaxial substrate with 2D material interposer, characterized in that: comprises a polycrystalline AlN substrate; on the polycrystalline AlN substrate there is SiO₂A bonding layer; SiO 2₂The c-surface sapphire laminating layer is arranged on the jointing layer; a polycrystalline orientation 2D material intermediate layer is grown on the c-surface sapphire laminating layer, the polycrystalline orientation 2D material intermediate layer at least has a top layer, and the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; a GaN single crystal epitaxial layer grows on the polycrystalline direction 2D material intermediate layer through Van der Waals epitaxy, or an AlN or AlGaN nucleation auxiliary layer grows on the polycrystalline direction 2D material intermediate layer through Van der Waals epitaxy, and a GaN single crystal epitaxial layer is arranged on the AlN or AlGaN nucleation auxiliary layer.

2. The gallium nitride epitaxial substrate with a 2D material interposer of claim 1, wherein: the 2D material interposer is greater than 0.5nm thick.

3. The gallium nitride epitaxial substrate with a 2D material interposer of claim 1, wherein: the thickness of the c-surface sapphire laminating layer is larger than 10 nm.

4. The gallium nitride epitaxial substrate with a 2D material interposer of claim 1, wherein: the 2D material intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.

5. The gallium nitride epitaxial substrate with a 2D material interposer of claim 1, wherein: the 2D material intermediate layer is of a single-layer structure and only has a top layer, and the top layer is made of a 2D material suitable for GaN, AlGaN or AlN epitaxy.

6. The gallium nitride epitaxial substrate with a 2D material interposer of claim 5, wherein: said top layer employing WS₂Or MoS₂。

7. The gallium nitride epitaxial substrate with a 2D material interposer of claim 1, wherein: the 2D material intermediate layer is of a composite layer structure formed by a top layer and a bottom layer, the top layer is made of 2D materials suitable for GaN, AlGaN or AlN epitaxy, and the bottom layer is made of 2D materials suitable for serving as a single crystal base layer.

8. The gallium nitride epitaxial substrate with a 2D material interposer of claim 7, wherein: said top layer employing WS₂Or MoS₂(ii) a The bottom layer adopts hBN.

9. The gallium nitride epitaxial substrate with a 2D material interposer of any one of claims 1 to 8, wherein: the mismatching degree of the lattice constant a of the top layer of the single-layer structure or the composite-layer structure of the 2D material intermediate layer and AlN, AlGaN or GaN is not more than 20%, and the 2D material intermediate layer is suitable for AlN, AlGaN or GaN epitaxy.

10. The gallium nitride epitaxial substrate with a 2D material interposer of any one of claims 1 to 8, wherein: at least the top layer of the multi-crystal orientation 2D material intermediate layer is composed of two crystal areas which are mutually in an angle matching direction of 60 degrees.