CN107680901A - The flexible compound substrate and manufacture method of a kind of semiconductor epitaxial - Google Patents

The flexible compound substrate and manufacture method of a kind of semiconductor epitaxial Download PDF

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Publication number
CN107680901A
CN107680901A CN201710890140.4A CN201710890140A CN107680901A CN 107680901 A CN107680901 A CN 107680901A CN 201710890140 A CN201710890140 A CN 201710890140A CN 107680901 A CN107680901 A CN 107680901A
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silicon
substrate
flexible
compound substrate
semiconductor epitaxial
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CN107680901B (en
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汤英文
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Jiangsu Da Photoelectric Co Ltd
Minnan Normal University
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Jiangsu Da Photoelectric Co Ltd
Minnan Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention belongs to semiconductor applications, disclose the flexible compound substrate and manufacture method of a kind of semiconductor epitaxial, take silicon chip of the two panels thickness for 100 microns of 1000 microns of polishings, the burnishing surface of every evaporates or sputtered 0.1 micron 5 microns of metallic aluminium, then fit together by the aluminium on two panels silicon chip and carry out high temperature bonding, by two panels wafer bonding together；Part aluminium and silicon form alloy during bonding, between silicon chip also can residual aluminum layers, aluminum layer thickness is less than or equal to 0.5 micron；Flexible substrate is made in a piece of carry out attenuated polishing to 1 micron 10 microns of thickness of the two panels silicon chip that is bonded together；The thin silicon wafer one of flexible substrate upwardly, epitaxial semiconductor thin-film material.The present invention by silicon substrate by being fabricated to flexible substrate so as to which the heat reduced between silicon and semiconductive thin film is adapted to, and which reduces stress caused by the expansion coefficient difference between silicon and semiconductive thin film.

Description

The flexible compound substrate and manufacture method of a kind of semiconductor epitaxial
Technical field
The invention belongs to semiconductor applications, more particularly to a kind of flexible compound substrate of semiconductor epitaxial and manufacturer Method.
Background technology
Light emitting semiconductor device tool has been widely used, such as semiconductor light-emitting-diode, can apply to instrument work State instruction, traffic lights, large screen display, illumination etc..In recent years, the film such as silicon substrate extension AlGaInN obtains Greatly concern, but due to the difference of silicon substrate and the thermal coefficient of expansion of AlGaInN homepitaxy layers, cause very big heat adaptation and Crystal lattice difference between them causes brilliant energy mismatch, so extension AlGaInN etc. easily cracks and be difficult to carry on silicon substrate High-crystal quality.
In summary, the problem of prior art is present be：Due to silicon substrate and the thermal coefficient of expansion of AlGaInN homepitaxy layers Difference, cause very big heat adaptation, heat adaptation is physical problem, and influence can only be somewhat reduced by Material growth etc., so Extension AlGaInN etc. is easily cracked on silicon substrate, can not be avoided；
Growth can greatly be slowed down on flexible substrates by the flexible compound substrate of the semiconductor epitaxial of the present invention Semi-conducting material and flexible substrate between thermal stress.
The content of the invention
The problem of existing for prior art, the invention provides a kind of flexible compound substrate of semiconductor epitaxial and system Make method.
The present invention is achieved in that a kind of flexible compound substrate manufacture method of semiconductor epitaxial, the semiconductor The flexible compound substrate and manufacture method adopted outside comprises the following steps：
Step 1: taking silicon chip of the two panels thickness for 100 microns of -500 microns of single-sided polishings, the burnishing surface of every evaporates or splashed 0.1 micron -5 microns of metallic aluminium is penetrated, then two panels silicon chip is fit together carry out high temperature bonding in opposite directions by metallic aluminium face, will Two panels wafer bonding is together；
Step 2: part aluminium and silicon form alloy during bonding, between silicon chip also can residual aluminum layers, pass through annealing Etc. process by the thickness control of aluminium lamination less than or equal to 0.5 micron；
Step 3: flexible substrate is made to 1 micron -10 microns of thickness in a piece of carry out attenuated polishing of two panels silicon chip；
Step 4: the thin silicon wafer one of flexible substrate is subjected to upwardly epitaxial semiconductor.
Further, the two panels silicon chip is thick silicon chip and thin silicon wafer；The thick silicon chip of the flexible substrate or using solar energy Level silicon wafer, monocrystalline silicon piece, GaAs, indium phosphide, tungsten, molybdenum, tungsten-copper alloy, molybdenum-copper, silico-aluminum, aluminium silicon carbide close One kind in the disks such as gold；Selection principle is exactly its coefficient of expansion and needs the coefficient of expansion of the semi-conducting material of epitaxial growth Matching is consistent as far as possible.
Further, the thin silicon wafer of the flexible substrate is located at the upper strata of flexible substrate；The thin silicon wafer of the flexible substrate or Using GaAs, indium phosphide, GaAs, AlGaInP monocrystalline thin slice in one kind；Selection principle is exactly its lattice constant The lattice constant of semi-conducting material with needing epitaxial growth matches consistent as far as possible.
Further, the upper strata thin silicon wafer side first grows one layer of sio before metallic aluminium is formed2Or SiN is as stop Layer；Barrier metal Al spreads to semiconductors such as upper strata thin silicon wafers, keeps the crystalline substance of the semiconductors such as flexible compound substrate upper strata thin silicon wafer Lattice are pure.
Another object of the present invention is to provide a kind of flexible compound substrate of above-mentioned semiconductor epitaxial, outside the semiconductor The upper strata of the flexible compound substrate adopted is the thin silicon lamella of surface polishing, and middle level is aluminium lamination, and lower floor is thick silicon wafer layer；And successively It is bonded together.
Another object of the present invention is to provide what a kind of flexible compound substrate using above-mentioned semiconductor epitaxial grew AlGaInN semi-conducting materials.
Another object of the present invention is to provide what a kind of flexible compound substrate using above-mentioned semiconductor epitaxial grew GaAs semi-conducting materials.
Another object of the present invention is to provide what a kind of flexible compound substrate using above-mentioned semiconductor epitaxial grew AlGaInP semi-conducting materials.
Another object of the present invention is to provide the InP that a kind of flexible compound substrate using above-mentioned semiconductor epitaxial grows Semi-conducting material.
Another object of the present invention is to provide what a kind of flexible compound substrate using above-mentioned semiconductor epitaxial grew The semi-conducting materials such as TeCdHg.
Advantages of the present invention and good effect are：By silicon substrate is fabricated to flexible substrate so as to reduce silicon with Heat adaptation between AlGaInN homepitaxy films, which reduces caused by the expansion coefficient difference between silicon and AlGaInN Stress, cardinal principle are：When growing semiconductive thin film with the high temperature epitaxy of 1000-1400 degree on general silicon substrate, silicon lining Bottom is also by high temperature, and in high temperature, epitaxial wafer is smooth, when cooling, the thermal coefficient of expansion ratio of the semi-conducting material of growth Silicon chip is big, and the epitaxial film of epitaxial growth will shrink, and the coefficient of expansion of silicon is small, and epitaxial film is by tensile stress, tensile stress When sufficiently large, epitaxial film can only be cracked to discharge stress, but during with flexible compound substrate, temperature is being reduced to sial In the past, flexible compound substrate upper strata silicon chip just looks like to float over the same on liquid, flexible compound substrate to alloy melting point (570 degree or so) Upper strata silicon chip is very thin, semiconductor of the tensile stress deficiency upper layer epitaxially grown caused by heat adaptation between thin silicon wafer and epitaxial film Film drawing crack, 430 degree of temperature have been avoided when being reduced to 570 degree or so from 1000 degree of temperature caused by thermal stress, work as temperature When degree is reduced to less than 570 degree, epitaxial film is just by the tensile stress of whole substrate, but the stress being at this moment subject to is 570 Degree is reduced to stress caused by normal temperature, is significantly smaller than the stress for being reduced to normal temperature from 1000 degree and being subject to, if flexible compound substrate Thick silicon side use with the consistent material of the growth semiconductor coefficient of expansion, for example if growth epitaxial material AlGaInN, is just adopted With the tungsten-copper alloy consistent with its coefficient of expansion, the thermal stress being so subject to is just smaller, so it is avoided that AlGaInN homepitaxy is given birth to The crackle of long semi-conducting material and the process complexity and raising crystal mass for reducing extension, so raising chip stability, Performance and life-span etc..
Brief description of the drawings
Fig. 1 is the flexible compound substrate manufacture method flow chart of semiconductor epitaxial provided in an embodiment of the present invention；
Fig. 2 is the structural representation of the flexible compound substrate of semiconductor epitaxial provided in an embodiment of the present invention.
In figure：1st, thin silicon lamella；2nd, aluminium lamination；3rd, thick silicon wafer layer.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to Limit the present invention.
As shown in figure 1, the flexible compound substrate and manufacture method of semiconductor epitaxial provided in an embodiment of the present invention include Following steps：
S101, take silicon chip of the two panels thickness for 300 microns of -500 microns of single-sided polishings, the burnishing surface evaporation or sputtering of every Upper 0.1 micron -2 microns of metallic aluminium, then metallic aluminium face in opposite directions by two panels silicon chip fit together carry out high temperature bonding, by two Piece wafer bonding is together；
S102, part aluminium and silicon form alloy during bonding, between silicon chip also can residual aluminum layers, the thickness of aluminium lamination Less than or equal to 0.5 micron, the thickness of residual aluminum can be controlled by subsequent anneal；
S103, flexible substrate is made to 1 micron -10 microns of thickness in a piece of carry out attenuated polishing of two panels silicon chip；
S104, the thin silicon wafer one of flexible substrate is subjected to upwardly epitaxial growth.
The thick silicon chip of the flexible substrate while can use solar energy-level silicon wafer, GaAs, indium phosphide, tungsten, molybdenum, The disk of tungsten-copper alloy, molybdenum-copper, silico-aluminum, aluminium silicon carbide alloy etc., selection principle are exactly its coefficient of expansion with needing The coefficient of expansion of the semi-conducting material of epitaxial growth is wanted to match as far as possible unanimously；Thin layer silicon chip must be monocrystalline silicon piece in this way on upper strata.
The thin silicon wafer of the flexible compound substrate can also use GaAs, indium phosphide, GaAs, the monocrystalline of AlGaInP Thin slice, selection principle are exactly to meet that its lattice constant matches as far as possible with the lattice constant of the semi-conducting material of needs epitaxial growth Unanimously.
The upper strata thin silicon wafer side of the flexible compound substrate can first grow one layer of resistance before sputtering or evaporated metal aluminium Barrier such as sio2, SiN etc., barrier metal Al spread to semiconductors such as upper strata thin silicon wafers, keep flexible compound substrate upper strata thin silicon The lattice of the semiconductors such as piece is pure.
Flexible compound substrate can also grow the semi-conducting materials such as GaAs, AlGaInP, InP, TeCdHg.
Because aluminium and alloy are in melting state all the time during epitaxial growth, AlGaInN film is only thin by upper strata Silicon layer influence, so as to which suffered stress is smaller, crystal mass just improves.Because the eutectic point of sial solid solution is 570 Degree left and right, so before cooling to 570 degree, AlGaInN is only by the tensile stress of several microns of silicon layers in upper strata, this tensile stress deficiency With drawing crack AlGaInN, when temperature is from when dropping to room temperature for 570 degree, AlGaInN by whole flexible substrate tensile stress, but from It is complete to the tensile stress of AlGaInN epitaxial layers that 570 degree, which are reduced to room temperature and are reduced to room temperature from 1000 degree of epitaxial growth temperature, Different, the former tensile stress to AlGaInN wants small more than one times, is so greatly lowered suffered by AlGaInN and comes from The tensile stress of silicon substrate, reduces crackle, improves crystal mass.
Fig. 2 is the structural representation of the flexible compound substrate of semiconductor epitaxial provided in an embodiment of the present invention.Semiconductor The upper strata of the flexible compound substrate adopted outside is thin silicon lamella 1, and middle level is aluminium lamination 2, and lower floor is thick silicon wafer layer 3；And it is bonded successively Together.
With reference to good effect, the invention will be further described.
The present invention has following benefit using flexible substrate growth AlGaInN systems homepitaxy film：
1 due to The present invention reduces the stress of silicon chip and AlGaInN systems film, improving its crystal mass, increasing naturally Yield of devices, performance and reliability, reduce production cost.
2 can also grow the AlGaInN systems epitaxial film of thickness on flexible substrates, and silicon can is removed in then chemical attack Thick AlGaInN systems film is obtained, thick AlGaInN films can be used as homo-substrate, be grown on sapphire with HVPE with existing The method that thick AlGaInN films make homo-substrate compares, and reduces the steps such as cutting and polishing, greatly reduces homo-substrate system Make difficulty, reduce cost.
3 existing silicon substrate extension AlGaInN systems films make HEMT device, and wherein AlGaInN systems film can not grow thickness, make It is not high to obtain crystal mass, it is difficult to make the HEMT device of high quality, and thickness then can easily be grown using flexible substrate AlGaInN films, carry significantly and do the electronic device performance such as HEMT.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.

Claims (10)

  1. A kind of 1. flexible compound substrate manufacture method of semiconductor epitaxial, it is characterised in that the semiconductor epitaxial it is soft Property compound substrate and manufacture method comprise the following steps：
    Step 1: silicon chip of the two panels thickness for 100 microns of -500 microns of single-sided polishings is taken, in the burnishing surface evaporation or sputtering of every 0.1 micron -5 microns of metallic aluminium, then metallic aluminium face in opposite directions by two panels silicon chip fit together carry out high temperature bonding, by two panels Wafer bonding is together；
    Step 2: part aluminium and silicon form alloy during bonding, between silicon chip also can residual aluminum layers, pass through annealing process By the thickness control of aluminium lamination less than or equal to 0.5 micron；
    Step 3: flexible substrate is made to 1 micron -10 microns of thickness in a piece of carry out attenuated polishing of two panels silicon chip；
    Step 4: the thin silicon wafer one of flexible substrate is subjected to upwardly epitaxial semiconductor.
  2. 2. the flexible compound substrate manufacture method of semiconductor epitaxial as claimed in claim 1, it is characterised in that the two panels Silicon chip is thick silicon chip and thin silicon wafer；The thick silicon chip of the flexible substrate or using solar energy-level silicon wafer, monocrystalline silicon piece, GaAs, Indium phosphide, tungsten, molybdenum, tungsten-copper alloy, molybdenum-copper, silico-aluminum, aluminium silicon carbide alloy disk in one kind.
  3. 3. the flexible compound substrate manufacture method of semiconductor epitaxial as claimed in claim 2, it is characterised in that the flexibility The thin silicon wafer of substrate is located at the upper strata of flexible substrate；The thin silicon wafer uses GaAs, indium phosphide, GaAs, AlGaInP Monocrystalline thin slice in one kind.
  4. 4. the flexible compound substrate of semiconductor epitaxial as claimed in claim 3, it is characterised in that the upper strata thin silicon wafer one Side first grows one layer of sio before metallic aluminium is formed2Or SiN barrier layers.
  5. 5. the flexible compound substrate of a kind of semiconductor epitaxial provided as claimed in claim 1, it is characterised in that described partly to lead The upper strata of the flexible compound substrate adopted in vitro is thin silicon lamella, and middle level is aluminium lamination, and lower floor is thick silicon wafer layer；And it is bonded in successively Together.
  6. A kind of 6. AlGaInN semi-conducting materials that flexible compound substrate using semiconductor epitaxial described in claim 5 grows.
  7. A kind of 7. GaAs semi-conducting materials that flexible compound substrate using semiconductor epitaxial described in claim 5 grows.
  8. A kind of 8. AlGaInP semi-conducting materials that flexible compound substrate using semiconductor epitaxial described in claim 5 grows.
  9. A kind of 9. InP semi-conducting materials that flexible compound substrate using semiconductor epitaxial described in claim 5 grows.
  10. A kind of 10. TeCdHg semi-conducting materials that flexible compound substrate using semiconductor epitaxial described in claim 5 grows.
CN201710890140.4A 2017-09-27 2017-09-27 Flexible composite substrate for semiconductor epitaxy and manufacturing method Expired - Fee Related CN107680901B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01154512A (en) * 1987-12-11 1989-06-16 Hitachi Ltd Semiconductor crystal
CN1564308A (en) * 2004-03-19 2005-01-12 中国科学院上海微系统与信息技术研究所 Upper silicon structure of insulation layer and its prepn. method
CN101789466A (en) * 2010-02-10 2010-07-28 上海理工大学 Method for manufacturing solar battery
CN105070805A (en) * 2015-08-17 2015-11-18 晶能光电（常州）有限公司 Silicon-based nitride UV LED epitaxial structure and realizing method thereof
CN206441733U (en) * 2016-09-30 2017-08-25 中山大学 A kind of high threshold voltage high mobility notched gates MOSFET structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01154512A (en) * 1987-12-11 1989-06-16 Hitachi Ltd Semiconductor crystal
CN1564308A (en) * 2004-03-19 2005-01-12 中国科学院上海微系统与信息技术研究所 Upper silicon structure of insulation layer and its prepn. method
CN101789466A (en) * 2010-02-10 2010-07-28 上海理工大学 Method for manufacturing solar battery
CN105070805A (en) * 2015-08-17 2015-11-18 晶能光电（常州）有限公司 Silicon-based nitride UV LED epitaxial structure and realizing method thereof
CN206441733U (en) * 2016-09-30 2017-08-25 中山大学 A kind of high threshold voltage high mobility notched gates MOSFET structure

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