TWI684681B - Electronic apparatus, light emitting device, and growth substrate and manufacturing method thereof - Google Patents

Abstract

An electronic apparatus, a light emitting device, and a growth substrate and a manufacturing method thereof are provided. The substrate is adapted for epitaxial growth to form the light emitting device. The light emitting device can be implemented in the electronic apparatus. The manufacturing method of the growth substrate includes the steps of providing a base and forming a composite film on the base, in which the composite film includes a metal layer and a crystalline carbon layer, and the metal layer is interposed between the base and the crystalline carbon layer.

Description

Electronic device, light emitting element, growth substrate and manufacturing method thereof

The invention relates to an electronic device, a light emitting element, a growth substrate and a manufacturing method thereof, in particular to a growth substrate for growing an epitaxial layer and a manufacturing method thereof, as well as a light emitting element and an electronic device using the growth substrate.

Light emitting diodes (LEDs) are currently widely used in lighting devices and as backlight modules in liquid crystal display devices. With the development of light-emitting diode manufacturing technology, the grain size (side length) of current light-emitting diodes can be reduced to less than 100 microns, which is called Micro LED and can be applied. Used as self-illuminating display pixels in the display panel.

The microluminescent diode includes multiple epitaxial layers of Group III-V semiconductors. The aforementioned Group III-V semiconductors may be gallium arsenide (GaAs), aluminum phosphide (AlP), gallium nitride (GaN), or the like. In order to grow the epitaxial layer of the group III-V semiconductor, a substrate that matches the lattice constant of the epitaxial layer is generally used to reduce lattice defects in the epitaxial layer. The substrate commonly used for growing the epitaxial layer of the group III-V semiconductor is, for example, a gallium arsenide wafer or a sapphire substrate.

However, gallium arsenide wafers or sapphire substrates are more expensive and have a limited size, and the number of micro light-emitting diodes used in display panels exceeds one million. To use these substrates to manufacture micro-emitting diodes for display panels, a large number of substrates must be used. In this way, the cost of the display panel will be too high, and the market competitiveness will be reduced.

In addition, currently, the process temperature for manufacturing the epitaxial layer of the group III-V semiconductor through metal organic chemical vapor deposition (MOCVD) is as high as 1000°C or more, which results in a high process cost. therefore, At present, other substrates and manufacturing processes that can be used to grow epitaxial layers are still to be developed to further reduce the manufacturing cost of semiconductor devices such as micro-emitting diodes.

The technical problem to be solved by the present invention is to reduce the cost of the growth substrate and the manufacturing cost for growing the epitaxial layer, so that the light-emitting device can be easily mass-produced. In this way, the production cost of the micro light-emitting diode display device can be further reduced.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a method for manufacturing a growth substrate for growing an epitaxial layer, which includes: providing a substrate and forming a composite film on the substrate. The composite film includes a metal layer and a crystalline carbon layer, and the metal layer is located between the substrate and the crystalline carbon layer.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a growth substrate for growing an epitaxial layer, which includes a substrate and a composite film disposed on the substrate, the composite film includes a metal layer and crystalline carbon Layer, and the metal layer is located between the substrate and the crystalline carbon layer.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a light-emitting device, which includes a growth substrate and a semiconductor light-emitting structure disposed on the growth substrate. The growth substrate includes a substrate and a composite film disposed on the substrate. The composite film includes a metal layer and a crystalline carbon layer, and the metal layer is located between the substrate and the crystalline carbon layer. The semiconductor light emitting structure is disposed on the crystalline carbon layer.

In order to solve the above technical problem, another technical solution adopted by the present invention is to provide an electronic device including a plurality of light emitting elements as described above.

One of the beneficial effects of the present invention is that the electronic device, light emitting element, growth substrate and manufacturing method thereof provided by the present invention can pass the technical solution of "forming a composite film with a crystalline carbon layer and a metal layer on a substrate" , A growth substrate for growing an epitaxial layer can be formed. Compared with existing sapphire substrates and gallium arsenide substrates, the growth substrate provided by the embodiments of the present invention has lower cost, and can be used to manufacture semiconductor light-emitting structures in a large area, which is beneficial to mass production of light-emitting devices. As such, when the light-emitting element of the embodiment of the present invention is applied to an electronic device, the electronic device can be made Low manufacturing cost.

In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and explanation only, and are not intended to limit the present invention.

1‧‧‧Growth substrate

10‧‧‧ base

10a‧‧‧First surface

10b‧‧‧Second surface

11‧‧‧composite membrane

110‧‧‧Metal layer

111‧‧‧Crystal carbon layer

111S‧‧‧Growth surface

111p‧‧‧carbon atom

M1‧‧‧Lighting element

BL‧‧‧Buffer layer

2‧‧‧ semiconductor light emitting structure

20‧‧‧P-type semiconductor layer

21‧‧‧N-type semiconductor layer

22‧‧‧Active layer

P1‧‧‧ First stage

P2‧‧‧Second stage

P3‧‧‧The third stage

A1, A2‧‧‧Temperature curve

B1‧‧‧ plasma power curve

C1, C2‧‧‧ gas flow curve

T1‧‧‧ First predetermined temperature

T2‧‧‧Second predetermined temperature

S100, S200, S201~S203 ‧‧‧ flow steps

FIG. 1 shows a flowchart of a method for manufacturing a light-emitting device according to an embodiment of the invention.

FIG. 2A shows a schematic diagram of step S100 of the manufacturing method of the present invention in an embodiment.

FIG. 2B shows a schematic diagram of an embodiment of step S201 of the manufacturing method of the present invention.

FIG. 2C is a schematic diagram of an embodiment of step S202 of the manufacturing method of the present invention.

FIG. 2D is a schematic diagram of an embodiment of step S203 of the manufacturing method of the present invention.

FIG. 3 shows a graph of substrate temperature and time during the formation of a composite film according to an embodiment of the invention.

FIG. 4 shows a graph of plasma power and time during the formation of a composite film according to an embodiment of the invention.

FIG. 5 shows a graph of gas flow rate and time during the formation of a composite film according to an embodiment of the invention.

FIG. 6 shows a schematic diagram of a light emitting device according to an embodiment of the invention.

The following is a specific specific example to illustrate the implementation of the "electronic device, light emitting element, growth substrate and manufacturing method thereof" disclosed by the present invention. Those skilled in the art can understand the advantages and advantages of the present invention from the content disclosed in this specification effect. The present invention can be implemented or applied through other different specific embodiments. Various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are only a simple illustration The description is not based on the actual size, and it is declared in advance. The following embodiments will further describe the related technical content of the present invention, but the disclosed content is not intended to limit the protection scope of the present invention.

Please refer to FIGS. 1 and 2A to 2D. 1 shows a flowchart of a method for manufacturing a growth substrate according to an embodiment of the invention, and FIGS. 2A to 2D illustrate detailed steps for manufacturing a growth substrate according to an embodiment of the invention. In the method for manufacturing a growth substrate provided by the embodiments of the present invention, a growth substrate for growing an epitaxial layer and having a lower cost can be formed.

Referring to FIG. 1, in step S100, a substrate is provided. As shown in FIG. 2A, the substrate 10 has two opposing first surfaces 10a and second surfaces 10b. In addition, the material of the substrate 10 may be a single crystal material or an amorphous material. The single crystal material is, for example, silicon, germanium, gallium arsenide, or sapphire, and the amorphous material is, for example, plastic, glass, or metal. In this embodiment, the material of the substrate 10 is an amorphous material.

Next, in step S200, a composite film is formed on the substrate. The steps of forming the composite film are described in detail below. Please refer to FIG. 1 and FIG. 2B first. In step S201, a metal layer is formed on the substrate. Specifically, the metal layer 110 is formed on the first surface 10a of the substrate 10, as shown in FIG. 2B.

In one embodiment, the metal layer 110 is formed on the substrate 10 by physical vapor deposition. In this embodiment, the metal layer 110 may be formed on the substrate 10 by sputtering or evaporation. In addition, due to the difference between the thermal expansion coefficient of the metal layer 110 and the thermal expansion coefficient of the substrate 10, the temperature change during the manufacturing of the composite film may cause the metal layer 110 to shrink and increase the surface roughness. Therefore, the thickness of the metal layer 110 in this embodiment is between 450 nm and 700 nm, which can prevent the metal layer 110 from being deformed due to the difference in thermal expansion coefficient. The material of the metal layer 110 may be selected from the group consisting of copper, nickel, rhodium, cobalt, gold, silver, platinum, and any combination thereof.

Next, referring to FIG. 1, in step S202, at a first predetermined temperature, the metal layer is exposed to the carbon precursor gas. With reference to FIG. 2C, it should be noted that the metal layer 110 can be used as a catalyst to cause the carbon precursor gas to be decomposed and generated at the first predetermined temperature carbon atom. Specifically, the carbon precursor gas may be a hydrocarbon gas, such as methane or acetylene. The carbon precursor gas undergoes dehydrogenation at a first predetermined temperature, thereby generating carbon atoms. Accordingly, the first predetermined temperature is preferably greater than the lowest temperature at which the carbon precursor gas can be decomposed.

In one embodiment, the first predetermined temperature is at least greater than 400°C. If the substrate 10 is an amorphous material, further considering the melting point of the substrate 10, the first predetermined temperature may be between 400°C and 700°C. If the material of the substrate 10 is silicon, germanium or sapphire, the first predetermined temperature may also be above 700°C. After the carbon precursor gas is decomposed, carbon atoms 111p will dissolve into the metal layer 110 to form a solid solution, as shown in FIG. 2C. That is to say, a plurality of carbon atoms 111p are solid-dissolved in the surface layer of the metal layer 110 and located on the side far from the substrate 10.

Next, please refer to FIGS. 1 and 2D. In step S203, the substrate and the metal layer are cooled to a second predetermined temperature to drive carbon atoms in the metal layer to be deposited on the surface of the metal layer to form a crystalline carbon layer.

As shown in FIG. 2D, after the substrate 10 and the metal layer 110 are cooled to the second predetermined temperature, the carbon atoms 111p in the metal layer 110 will be deposited on the surface of the metal layer 110. The second predetermined temperature may be between 15°C and 35°C.

It should be noted that the solubility of carbon atoms in the metal layer 110 (hereinafter referred to as carbon solubility) will decrease as the temperature decreases. Since the first predetermined temperature is greater than the second predetermined temperature, the carbon solubility at the first predetermined temperature will be greater than the carbon solubility at the second temperature. That is to say, during the cooling process, the carbon atoms in the metal layer 110 are deposited on the surface of the metal layer 110 due to the supersaturation of the concentration.

In addition, the carbon atoms deposited on the surface of the metal layer 110 are arranged in an orderly manner to form the crystalline carbon layer 111. It should be noted that the crystal structure of the crystalline carbon layer 111 is between the amorphous structure and the single crystal structure. The crystalline carbon layer 111 may include graphite, graphene, or diamond-like carbon. In one embodiment, the crystalline carbon layer 111 includes graphene and has a hexagonal lattice structure. Since the lattice constant of the crystalline carbon layer 111 and the lattice constant of part of the Group III-V semiconductor materials (such as gallium nitride) can be matched with each other, it is suitable for the growth of such three Epitaxial layer of Group V semiconductor material. The lattice constant matching means that the difference between the lattice constants of the two heterogeneous materials does not exceed 5%. Accordingly, by forming the crystalline carbon layer 111, the growth substrate 1 can have a growth surface 111S that can be used to grow the epitaxial layer.

During the cooling process, almost most of the carbon atoms will be deposited on the surface of the metal layer 110, but a small amount of carbon atoms may remain in the metal layer 110 without being precipitated. Therefore, the metal layer 110 contains a small amount of carbon atoms. As shown in FIG. 2D, the metal layer 110 includes a plurality of carbon atoms 111p, and the carbon atoms 111p are distributed in the surface layer of the metal layer 110 and located on the side far from the substrate 10.

In other embodiments, if the carbon solubility of the metal layer 110 is less than 0.01%, then by controlling the temperature parameters (including the first predetermined temperature, the second predetermined temperature, and the cooling rate) and the flow rate of the carbon precursor gas, it is also possible to cool the temperature to After the second predetermined temperature, all carbon atoms in the metal layer 110 are precipitated. In addition, the thickness of the crystalline carbon layer 111 is approximately between 10 nm and 20 nm, which can be adjusted by controlling the temperature parameter and the flow rate of the carbon precursor gas.

As shown in FIG. 2D, through the above steps, a growth substrate 1 for growing an epitaxial layer can be formed. The growth substrate 1 includes a base 10 and a composite film 11 on the base 10, and the composite film 11 has a metal layer 110 and a crystalline carbon layer 111, wherein the metal layer 110 is located between the crystalline carbon layer 111 and the base 10, and the crystalline carbon layer 111 It has a growth surface 111S that can grow an epitaxial layer.

That is, even if the material of the substrate 10 is an amorphous material, by forming the composite film 11 having the metal layer 110 and the crystalline carbon layer 111 on the substrate 10, a growth surface 111S suitable for epitaxial growth can be formed.

Next, taking the sputtering process as an example, the steps of forming the composite film 11 according to the embodiment of the present invention will be described in detail. Please refer to FIGS. 3 to 5 together. FIG. 3 shows a graph of substrate temperature and time during the formation of a composite film according to an embodiment of the invention. FIG. 4 shows a graph of plasma power and time during the formation of a composite film according to an embodiment of the invention. FIG. 5 shows a graph of gas flow rate and time during the formation of a composite film according to an embodiment of the invention.

It should be noted that the temperature curve shown in FIG. 3 is only used to indicate the predetermined temperature change trend during the formation of the composite film, and does not reflect the actual temperature curve. Similarly, the plasma power curves and the gas flow curves in FIG. 4 and FIG. 5 are only used to represent the predetermined change trend of the plasma power and the gas flow rate during the formation of the composite film, respectively.

In addition, before the composite film 11 is formed, the substrate 10 has been set in the vacuum chamber. As shown in FIGS. 3 to 5, in the step of forming the composite film, there are three stages. In the first stage P1, the metal layer 110 is formed on the substrate 10. In the second stage P2, carbon atoms are dissolved in the metal layer 110. In the third stage P3, carbon atoms are deposited on the surface of the metal layer 110 to form a crystalline carbon layer 111.

The temperature curves A1 and A2 in FIG. 3 respectively show different embodiments. The temperature curve A1 represents that the substrate 10 is heated to the first predetermined temperature T1 at the beginning before the metal layer 110 is formed. Thereafter, the substrate 10 is maintained at the first predetermined temperature T1 until the end of the second stage P2. In the third stage P3, the substrate 10 is lowered from the first predetermined temperature T1 to the second predetermined temperature T2 to drive the carbon atoms out of the surface of the metal layer 110.

Another temperature curve A2 represents that during the formation of the metal layer 110, the substrate 10 may not be heated first, but maintained at a lower second predetermined temperature T2. Before entering the second stage P2, the substrate 10 is heated to the first predetermined temperature T1, and the substrate 10 is maintained at the first predetermined temperature T1 until the end of the second stage P2. Afterwards, in the third stage P3, the substrate 10 is also cooled from the first predetermined temperature T1 to the second predetermined temperature T2 to drive the carbon atoms out of the surface of the metal layer 110.

The plasma power curve in FIG. 4 may show the time point when the plasma is generated to form the metal layer 110. 3 and 4, in one embodiment, according to the temperature curve A1 and the plasma power curve B1, in the first stage P1, after the substrate 10 is heated to the first predetermined temperature T1, the power is turned on to increase the plasma Power to generate plasma in the vacuum chamber to strike the target to form the metal layer 110 on the substrate 10. In another embodiment, the power supply may be turned on before the substrate 10 has not been heated to the first predetermined temperature T1 Increase plasma power. When the thickness of the metal layer 110 reaches a preset value, the power is turned off.

Please refer to FIG. 5. In this embodiment, one of the gas flow curves C1 represents the change of the argon gas flow into the vacuum chamber at different stages. Another gas flow curve C2 represents the change of the gas flow rate of the carbon precursor gas into the vacuum chamber at different stages.

3 to 5, according to the plasma power curve B1 and the gas flow curve C1, in the first stage P1 and the second stage P2, the flow of argon gas into the vacuum chamber reaches a preset value to generate argon gas Plasma. According to another gas flow curve C2, no carbon precursor gas is introduced in the first stage P1. At the second stage P2, the carbon precursor gas was introduced into the vacuum chamber. In other words, in the second stage P2, the argon gas and the carbon precursor gas will pass into the vacuum chamber together. The ratio of argon gas to carbon precursor gas can be set according to actual needs.

According to the plasma power curve B1, since the plasma power supply has not been turned off in the second stage P2, the thickness of the metal layer 110 continues to increase. At this time, the plasma can also assist in decomposing the carbon precursor gas, so that the carbon atoms 111p dissolve into the metal layer 110 to form a solid solution (see FIG. 2C).

With reference to FIGS. 3 to 5, according to the temperature curves A1, A2, the plasma power curve B1, and the gas flow curves C1, C2, before entering the third stage P3, that is, before the step of cooling the substrate 10, the supply of the carbon precursor is stopped Gas and argon gas, and turn off the plasma power. Then, in the third stage P3, as the temperature of the substrate 10 decreases, the carbon atoms in the metal layer 110 may be driven to precipitate on the surface of the metal layer 110 due to oversaturation in concentration, thereby forming a crystalline carbon layer (see FIG. 2D).

The growth substrate 1 of the embodiment of the present invention can be applied to grow an epitaxial layer to form a semiconductor device. The aforementioned semiconductor element is, for example, a light-emitting diode or a group III-V solar cell. Please refer to FIG. 6. The following uses light-emitting devices as an example to further illustrate the application of the growth substrate according to an embodiment of the present invention.

The light-emitting element M1 includes the growth substrate 1 formed by the aforementioned manufacturing method, and The buffer layer BL and the semiconductor light emitting structure 2, wherein the buffer layer BL is located between the crystalline carbon layer 111 and the semiconductor light emitting structure 2. Specifically, the buffer layer BL and the semiconductor light emitting structure 2 may be formed on the growth substrate 1 in order to form the light emitting element M1 of the embodiment of the present invention.

In one embodiment, the material of the buffer layer BL is gallium nitride, aluminum nitride, zinc oxide, gallium arsenide, silicon, or germanium. The buffer layer BL grown on the crystalline carbon layer 111 may have better crystallinity, so that the semiconductor light emitting structure 2 subsequently grown on the buffer layer BL also has better epitaxial quality.

The lattice constant of the buffer layer BL can match the lattice constant of the semiconductor light emitting structure 2. In one embodiment, when the material of the semiconductor light emitting structure 2 is gallium nitride, the material of the buffer layer BL is aluminum nitride or zinc oxide.

In addition, in the step of forming the semiconductor light emitting structure 2, the buffer layer BL can reduce the thermal stress generated due to the difference in thermal expansion coefficient between the growth substrate 1 and the semiconductor light emitting structure. In an embodiment, the thickness of the buffer layer BL may be between 50 and 200 nm (nm).

In addition, in this embodiment, the buffer layer BL can also be formed on the growth substrate 1 by sputtering, and the processing temperature for forming the buffer layer BL is between 500°C and 600°C. Compared with organometallic chemical vapor deposition, forming the buffer layer BL by sputtering can lower the processing temperature and facilitate large-area fabrication.

The semiconductor light emitting structure 2 includes multiple epitaxial layers, and the multiple epitaxial layers include at least a P-type semiconductor layer 20, an N-type semiconductor layer 21, and an active layer 22. The active layer 22 is located between the P-type semiconductor layer 20 and the N-type semiconductor layer 21, and may include a single or multiple quantum wells. In an embodiment, the material of the semiconductor light-emitting structure 2 may be a group III-V semiconductor material such as gallium nitride (GaN), gallium arsenide (GaAs), and aluminum phosphide (AlP).

The semiconductor light emitting structure 2 is formed on the buffer layer BL by physical vapor deposition. Further, the semiconductor light emitting structure 2 may be formed on the buffer layer BL by sputtering. It should be noted that in the prior art, sputtering is rarely used to make semiconductor light emitting The structure is mainly due to the difficulty in forming an epitaxial layer of higher quality by sputtering at present, and the quality of the epitaxial layer affects the luminous efficiency and brightness of the light emitting element M1. According to this, in the past when manufacturing the semiconductor light emitting structure 2, sputtering is generally not the preferred manufacturing method.

However, when the light-emitting element M1 is applied to a display device as a display pixel, since the number of light-emitting elements M1 is huge (possibly as many as millions), the requirements for the brightness and luminous efficiency of a single light-emitting element M1 are relatively loose . On the premise that the semiconductor light emitting structure 2 can be formed in a large area as a main consideration, in the embodiment of the present invention, the semiconductor light emitting structure 2 is selected to be manufactured by sputtering. On the other hand, when the growth substrate 1 of the embodiment of the present invention is applied and the semiconductor light emitting structure 2 is grown by sputtering, the semiconductor light emitting structure 2 can have epitaxial quality that meets the requirements. In this way, mass production of the light-emitting element M1 is facilitated, and the cost of the display device can be further reduced.

In addition, compared with the organic metal chemical vapor deposition process, the process temperature for manufacturing the semiconductor light emitting structure 2 by sputtering is relatively low. Therefore, there are many choices of materials for forming the base 10 of the growth substrate 1. The light emitting element M1 provided by the embodiment of the present invention can be applied to an electronic device (not shown). The aforementioned electronic device is, for example, a display device or a lighting device.

In other words, the electronic device may include a plurality of light emitting elements M1. When the electronic device is a display device, the plurality of light-emitting elements M1 may be arranged in an array to serve as a display pixel or as a backlight of the display device. In another embodiment, when the electronic device is a lighting device, a plurality of light-emitting elements M1 arranged in an array may form a surface light source.

In summary, one of the beneficial effects of the present invention is that the electronic device, the light-emitting element, the growth substrate and the manufacturing method thereof provided by the present invention can pass through the formation of a crystalline carbon layer 111 on a substrate 10 In addition, the technical solution of the composite film 11" of the metal layer 110 can form the growth substrate 1 for growing the epitaxial layer.

Compared with the existing sapphire substrates and gallium arsenide substrates, the growth substrate 1 provided by the embodiments of the present invention has lower cost and can be used to manufacture semiconductor light-emitting devices in a large area Structure 2 is beneficial to mass production of the light-emitting element M1. As such, when the light-emitting element of the embodiment of the present invention is applied to an electronic device, the electronic device can have a lower manufacturing cost. In addition, in the embodiment of the present invention, the base 10 of the growth substrate 1 can be selected from a metal material, so that the light emitting element M1 has a better heat dissipation effect.

The content disclosed above is only a preferred and feasible embodiment of the present invention, and therefore does not limit the scope of the patent application of the present invention, so any equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. Within the scope of the patent.

S100, S200, S201~S203 ‧‧‧ flow steps

Claims (17)

A method for manufacturing a growth substrate, wherein the growth substrate is used to grow an epitaxial layer, and the manufacturing method includes: providing a substrate; and forming a composite film on the substrate, wherein the composite film includes a A metal layer and a crystalline carbon layer, and the metal layer is located between the substrate and the crystalline carbon layer; wherein, before forming the crystalline carbon layer, a plurality of carbon atoms are solid dissolved in the surface layer of the metal layer Inside, and located on the side away from the substrate. The manufacturing method according to claim 1, wherein the step of forming the composite film includes: forming the metal layer on the substrate; thickening the metal layer at a first predetermined temperature, and simultaneously Exposing the metal layer to a carbon precursor gas, so that the carbon precursor gas is decomposed at the first predetermined temperature to generate carbon atoms, and the carbon atoms are dissolved into the metal layer, wherein, The first predetermined temperature is at least greater than 400°C; and the substrate and the metal layer are cooled to a second predetermined temperature to drive carbon atoms in the metal layer to be deposited on the surface of the metal layer to form The crystalline carbon layer. The manufacturing method according to claim 2, wherein, in the step of forming the metal layer, the substrate is heated to the first predetermined temperature, and the first predetermined temperature is between 400°C and 700°C. The manufacturing method according to claim 2, wherein the carbon precursor gas is a hydrocarbon gas. The manufacturing method according to claim 2, wherein the supply of the carbon precursor gas is stopped before the step of cooling the substrate. The manufacturing method according to claim 2, wherein the metal layer is formed by a physical vapor deposition method. The manufacturing method according to claim 1, wherein the material of the substrate is an amorphous material, and the material of the metal layer is selected from copper, nickel, rhodium, cobalt, gold, silver, platinum and any combination thereof Group, and the metal layer contains carbon atoms. A growth substrate for growing an epitaxial layer. The growth substrate includes: a substrate; and a composite film disposed on the substrate, wherein the composite film includes a metal layer and a crystalline carbon layer, The metal layer is located between the substrate and the crystalline carbon layer; wherein the metal layer includes a plurality of carbon atoms, and the plurality of carbon atoms are distributed in the surface layer of the metal layer and are located away from the The side of the base. The growth substrate according to claim 8, wherein the material of the base is an amorphous material, and the material of the metal layer is selected from copper, nickel, rhodium, cobalt, gold, silver, platinum, and any combination thereof Group, and the metal layer contains carbon atoms. The growth substrate according to claim 8, wherein the thickness of the metal layer is between 450 nm and 700 nm, and the thickness of the crystalline carbon layer is between 10 nm and 20 nm. A light-emitting device includes a growth substrate including a substrate and a composite film disposed on the substrate, wherein the composite film includes a metal layer and a crystalline carbon layer. The metal layer is located between the substrate and the crystalline carbon layer. The metal layer includes a plurality of carbon atoms. The plurality of carbon atoms are distributed in the surface layer of the metal layer and are located at a distance from the substrate. Side; and a semiconductor light emitting structure, which is disposed on the crystalline carbon layer, wherein the semiconductor light emitting structure includes multiple layers of sputtered epitaxial layer. The light-emitting element according to claim 11, wherein the material of the substrate is an amorphous substrate, and the material of the metal layer is selected from the group consisting of copper, nickel, rhodium, cobalt, gold, silver, platinum, and any combination thereof Group, and the metal layer contains carbon atoms. The light-emitting element according to claim 11, wherein the thickness of the metal layer is between 450 nm and 700 nm, and the thickness of the crystalline carbon layer is between 10 nm and 20 nm. The light-emitting element according to claim 11, further comprising: a buffer layer between the crystalline carbon layer and the semiconductor light-emitting structure, and the material of the buffer layer is gallium nitride, aluminum nitride, zinc oxide , Gallium arsenide, silicon or germanium. The light-emitting element according to claim 11, wherein the semiconductor light-emitting structure includes multiple epitaxial layers, and the material of each epitaxial layer is a group III-V semiconductor material. An electronic device including a plurality of light-emitting elements, each of which includes: a growth substrate including a substrate and a composite film disposed on the substrate, wherein the composite film includes a A metal layer and a crystalline carbon layer, the metal layer is located between the substrate and the crystalline carbon layer, the metal layer includes a plurality of carbon atoms, and the plurality of carbon atoms are distributed in the surface layer of the metal layer And located on the side far from the base; and A semiconductor light emitting structure is disposed on the crystalline carbon layer, wherein the semiconductor light emitting structure includes multiple layers of sputtered epitaxial layers. The electronic device according to claim 16, wherein the electronic device is a display device or a lighting device.

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