TWI648875B - Substrate, electronic apparatus, and light emitting device and manufacturing method thereof - Google Patents

Abstract

The invention discloses a substrate, an electronic device, a light-emitting element and a method of manufacturing the same. A method of manufacturing a light-emitting element includes providing a substrate having a growth face and forming a semiconductor light-emitting structure on the substrate. The step of providing a substrate further includes providing an initial substrate having a smooth surface; forming a base metal layer on the smooth surface; forming a thickened layer on the base metal layer to form a substrate including the thickened layer and the base metal layer, The bonding strength between the thick layer and the base metal layer is greater than the bonding strength between the base metal layer and the initial substrate; and the substrate is separated from the initial substrate, the surface of the base metal layer is a growth surface, and the surface roughness of the growth surface is The difference between the surface roughness of the smooth surface does not exceed 5 nm.

Description

Substrate, electronic device, and light-emitting element and method of manufacturing same

The present invention relates to a substrate, an electronic device, and a light-emitting element, and a method of manufacturing the same, and, in particular, to a micro-light-emitting diode element using a metal as a substrate, a method of manufacturing the same, and an electronic device using the same.

Light-emitting diodes (LEDs) are currently widely used in lighting devices and as backlight modules in liquid crystal display devices. With the development of light-emitting diode fabrication technology, the current crystal size (side length) of the light-emitting diode can be reduced to less than 100 micrometers, which is called a micro-light-emitting diode (Micro LED), and can be applied. Displayed as a self-illuminating display pixel in the display panel.

The micro-light emitting diode comprises a plurality of layers of tri-five semiconductor epitaxial layers, and the aforementioned tri-five semiconductors may be gallium arsenide (GaAs), aluminum phosphide (AlP), gallium nitride (GaN) or the like. In order to grow the epitaxial layer of the tri-five semiconductor, a substrate matching the lattice constant of the epitaxial layer is generally used to reduce lattice defects in the epitaxial layer. Substrates commonly used to grow epitaxial layers of tri-five semiconductors are, for example, gallium arsenide wafers or sapphire substrates.

However, gallium arsenide wafers or sapphire substrates are relatively expensive and limited in size, and the number of micro-light emitting diodes applied to display panels exceeds one million. To apply these substrates to manufacture micro-light emitting diodes for display panels, a large number of substrates must be used. In this way, the cost of the display panel will be too high, and the market competitiveness will be reduced.

On the other hand, the process temperature of manufacturing the epitaxial layer of the tri-five semiconductor by the metal organic chemical vapor deposition (MOCVD) is as high as 1000 ° C or more, resulting in high process cost. therefore, Other substrates and processes that can be used to grow the epitaxial layer are still being developed to further reduce the manufacturing cost of the micro-emitting diode.

The technical problem to be solved by the present invention is to reduce the substrate cost and manufacturing cost of the light-emitting element, so that the light-emitting element can be easily mass-produced. In this way, the production cost of the micro-light-emitting diode display device can be further reduced.

In order to solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a method of manufacturing a light-emitting element, comprising: providing a substrate having a growth surface and forming a semiconductor light-emitting structure on the substrate. The step of providing a substrate comprises: providing an initial substrate having a smooth surface; forming a base metal layer on the smooth surface; forming a thickened layer on the base metal layer to form a substrate including the thickened layer and the base metal layer, The bonding strength between the thick layer and the base metal layer is greater than the bonding strength between the base metal layer and the initial substrate; and separating the substrate from the initial substrate, wherein the surface of the base metal layer is a growth surface, and the growth surface is The difference between the surface roughness and the surface roughness of the smooth surface does not exceed 5 nm.

In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a substrate for growing at least one epitaxial layer. The substrate includes a thickened layer and a base metal layer bonded to the thickened layer. The base metal layer has a growth surface, and the surface roughness of the growth surface does not exceed 5 nm.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a light-emitting element including a substrate and a semiconductor light-emitting structure. The substrate includes a thickened layer and a base metal layer bonded to the thickened layer. The base metal layer has a growth surface, and the surface roughness of the growth surface does not exceed 5 nm. The semiconductor light emitting structure is disposed on the growth surface.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an electronic device including a plurality of light-emitting elements as described above.

One of the advantageous effects of the present invention is that the light-emitting element provided by the present invention, the method of manufacturing the same, and the electronic device using the same can pass "with a smooth surface According to the technical proposal of forming a base metal layer and a thickening layer on the initial substrate, a substrate for growing a semiconductor light emitting structure can be formed. Compared with the existing sapphire substrate and the gallium arsenide substrate, the embodiment of the present invention provides The cost of the substrate is low, and the semiconductor light-emitting structure can be manufactured in a large area, which is advantageous for mass production of the light-emitting element. Thus, when the light-emitting element of the embodiment of the invention is applied to an electronic device, the electronic device can be made lower. Manufacturing costs.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the detailed description and drawings of the invention.

M1, M2‧‧‧ light-emitting elements

10, 10'‧‧‧ initial substrate

10S, 10S'‧‧‧Smooth surface

100, 100'‧‧‧subsubstrate

100s‧‧‧ edge

20‧‧‧Substrate

20S‧‧‧ growth face

21‧‧‧Base metal layer

SL‧‧‧Transition surface

22‧‧‧ Thickened layer

BL‧‧‧ buffer layer

30‧‧‧Semiconductor light-emitting structure

31‧‧‧P type semiconductor layer

32‧‧‧ active layer

33‧‧‧N type semiconductor layer

L1‧‧‧Laser light

S100~S104, S200, S300‧‧‧ process steps

Fig. 1 is a flow chart showing a method of manufacturing a light-emitting element of the present invention.

Fig. 2A shows a schematic view of step S101 of the manufacturing method of the present invention in an embodiment.

2B is a schematic view showing an embodiment of the step S102 of the manufacturing method of the present invention.

2C shows a schematic view of step S102 of the manufacturing method of the present invention in another embodiment.

Fig. 2D is a view showing a step S103 of the manufacturing method of the present invention in an embodiment.

2E is a schematic view showing an embodiment of the step S104 of the manufacturing method of the present invention.

2F shows a schematic diagram of step S200 of the manufacturing method of the present invention in one embodiment.

2G shows a schematic diagram of step S300 of the manufacturing method of the present invention in one embodiment.

2H shows a schematic view of step S300 of the manufacturing method of the present invention in another embodiment.

3A is a top plan view showing an initial substrate before bonding according to an embodiment of the present invention. Figure.

3B is a side elevational view of the initial substrate prior to bonding in accordance with an embodiment of the present invention.

4A is a top plan view showing the initial substrate after bonding according to an embodiment of the present invention.

4B is a side elevational view of the initial substrate after bonding, in accordance with an embodiment of the present invention.

The embodiments of the present invention relating to "light-emitting elements, methods of manufacturing the same, and electronic devices using the same" are described in the following specific embodiments. Those skilled in the art can understand the advantages and advantages of the present invention from the contents disclosed in the present specification. effect. The invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.

Please refer to FIG. 1 and FIGS. 2A to 2H. 1 is a flow chart showing a method of manufacturing a light-emitting element according to an embodiment of the present invention, and FIGS. 2A to 2H are diagrams showing detailed steps of manufacturing a light-emitting element of one embodiment of the present invention. The manufacturing cost of the light-emitting element can be reduced by the manufacturing method provided by the embodiment of the present invention. The aforementioned light-emitting element is, for example, a light-emitting diode.

Referring to FIG. 1, in step S100, a substrate is provided. The step of providing the substrate includes at least steps S101 to S104. Further, in step S101, an initial substrate is provided, and the initial substrate has a smooth surface.

As shown in FIG. 2A, the initial substrate 10 may be a substrate having a crystal orientation or an amorphous substrate. The substrate having a crystal orientation is, for example, a ruthenium substrate, a ruthenium substrate, a gallium arsenide substrate or a sapphire substrate, and the amorphous substrate is, for example, a plastic substrate or a glass substrate. material. In order to select whether or not the initial substrate 10 has a specific crystal orientation, the surface roughness (Ra) of the smooth surface 10S of the initial substrate 10 does not exceed 2 nm.

Please refer to FIG. 1 and FIG. 2B. In step S102, a base metal layer is formed on the initial substrate. Specifically, the base metal layer 21 is formed on the smooth surface 10S of the initial substrate 10 as shown in FIG. 2B.

In an embodiment, the base metal layer 21 is formed on the initial substrate 10 by physical vapor deposition. In this embodiment, the base metal layer 21 may be formed on the initial substrate 10 by sputtering or evaporation. In addition, the thickness of the base metal layer 21 is between 100 nm and 200 nm.

The material of the base metal layer 21 may be selected from the group consisting of iron, cobalt, nickel, copper, molybdenum, gold, platinum, aluminum, zinc, silver, titanium, lanthanum, cerium, lanthanum, and any combination thereof. The material of the base metal layer 21 can be selected according to practical applications, which will be further exemplified hereinafter, and will not be described herein.

Referring to FIG. 2C, a schematic diagram of step S102 of the manufacturing method of another embodiment of the present invention is shown. It should be noted that, under the condition that the initial substrate 10 is a substrate having a crystal orientation, in the initial stage of forming the underlying metal layer 21, although the base metal layer 21 is different from the material of the initial substrate 10, the atoms of the underlying metal layer 21 are still A transition surface layer SL having a single crystal structure is formed in accordance with the crystal orientation of the initial substrate 10. As the film thickness of the underlying metal layer 21 increases, the farther the atoms of the underlying metal layer 21 are from the initial substrate 10, and gradually no longer accumulate according to the crystallographic direction of the initial substrate 10, but are deposited according to the crystallization characteristics of the material itself.

That is, the base metal layer 21 formed on the initial substrate 10 will have a transition surface layer SL directly connected to the smooth surface 10S. The transition surface layer SL has a single crystal structure and will have the same crystal orientation as the initial substrate 10.

First, the surface of the base metal layer 21 and the initial substrate 10 are connected to be used to grow a semiconductor light emitting structure. Accordingly, in an embodiment, the material of the initial substrate 10 can select a material whose lattice constant matches the lattice constant of the semiconductor light emitting structure, so that the lattice constant of the transition surface layer SL can also match the semiconductor light emitting structure. Lattice constant.

The lattice constant matching means that the difference between the lattice constants of the two heterogeneous materials does not exceed 5%. That is, by selecting the appropriate initial substrate 10 and the underlying metal layer 21, the difference between the lattice constant of the transition surface layer SL and the lattice constant of the semiconductor light-emitting structure can be made no more than 5%. For example, if the material constituting the semiconductor light emitting structure is gallium nitride, the material of the underlying metal layer 21 may be selected, wherein the lattice constant of germanium may match the lattice constant of gallium nitride. The thickness of the transition surface layer SL is approximately between 30 and 60 nm.

In addition, it is to be noted that although the base metal layer 21 is formed on the initial substrate 10, no chemical reaction occurs between the base metal layer 21 and the initial substrate 10, so the interface between the base metal layer 21 and the initial substrate 10 is not Other compounds will be produced.

Please refer to FIG. 1 and FIG. 2D. In step S103, a thickening layer is formed on the base metal layer to form a substrate. The bonding strength between the thickening layer and the base metal layer is greater than the bonding strength between the base metal layer and the initial substrate.

Figure 2D follows the steps of Figure 2B. The thickening layer 22 is continuously formed on the base metal layer 21 to form the substrate 20. Additionally, the thickening layer 22 is primarily used to provide internal stress sufficient to separate the substrate 20 from the initial substrate 10. The object of the present invention can be attained by the fact that the thickness of the thickening layer 22 enables the substrate 20 to be separated from the initial substrate 10. Therefore, in the present invention, there is no particular requirement for the film quality or the crystallization characteristics of the thickened layer 22.

In one embodiment, the thickness of the thickened layer 22 is approximately 10 to 20 times the thickness of the base metal layer 21 to provide an internal stress sufficient to separate the substrate 20 from the initial substrate 10. In one embodiment, the thickened layer 22 has a thickness of at least greater than 20 microns.

Accordingly, the thickening layer 22 can be formed on the base metal layer 21 by a physical vapor deposition process or electroplating. The thickened layer 22 having a sufficient thickness can be formed by electroplating in a relatively short period of time compared to a physical vapor deposition (e.g., sputtering) process, but the thickened layer 22 has a lower density.

The material of the thickening layer 22 can also be selected from iron, cobalt, nickel, copper, molybdenum, gold, platinum, One of a group consisting of aluminum, zinc, silver, titanium, niobium, tantalum, niobium and any combination thereof. In one embodiment, the material of the base metal layer 21 and the material of the thickened layer 22 are both copper. However, the material of the thickening layer 22 may also be different from the material of the base metal layer 21. Accordingly, in another embodiment, the material of the base metal layer 21 is tantalum and the material of the thickened layer 22 is copper.

Please refer to FIG. 1 and FIG. 2E. In step S104, the substrate is peeled off from the initial substrate. The substrate 20 can be used to grow an epitaxial layer, and the substrate 20 includes a thickened layer 22 and a base metal layer 21 bonded to the thickened layer 22. The base metal layer 21 has a growth face 20S, and the difference between the surface roughness of the growth face 20S and the surface roughness of the smooth surface 10S does not exceed 5 nm.

As shown in FIG. 2E, since the internal stress of the substrate 20 is greater than the bonding strength between the base metal layer 21 and the initial substrate 10, the substrate 20 can be peeled off from the initial substrate 10 without damaging the substrate 20. In addition, no chemical reaction or bonding occurs between the base metal layer 21 and the initial substrate 10, so that the surface of the base metal layer 21 and the initial substrate 10 are not damaged after the substrate 20 is separated from the initial substrate 10.

After the substrate 20 is separated from the initial substrate 10, the substrate 20 is directly in contact with the initial substrate 10, and can be used as a growth surface 20S of the grown semiconductor light-emitting structure. It is worth mentioning that after the above steps, the surface roughness of the growth surface 20S of the substrate 20 is substantially the same as the surface roughness of the smooth surface 10S. Further, the difference between the surface roughness of the growth surface 20S and the surface roughness of the smooth surface 10S does not exceed 5 nm (nano). In one embodiment, the surface roughness of the growth surface 20S does not exceed 5 nm (nano), and is generally between 1 and 3 nm (nano).

It should be noted that since the total thickness of the semiconductor light emitting structure is only about 4 to 5 μm, the surface roughness of the growth surface 20S of the substrate 20 has a significant influence on the number of lattice defects of the semiconductor light emitting structure.

It should be noted that in the prior art, one of the reasons why the metal substrate is less used as the substrate of the semiconductor light emitting structure is that the surface roughness of the metal substrate is difficult to reach less than 5 nm, which is in accordance with the epitaxial requirement.

However, by forming the substrate of the light-emitting element by the manufacturing method of the embodiment of the present invention, not only the manufacturing cost of the substrate but also the surface roughness conforming to the epitaxial requirement can be obtained. In addition, the substrate 20 provided by the embodiment of the present invention has flexibility, so that the light-emitting element can be applied to fabricate a flexible display device.

It should be noted that although the substrate 20 of the embodiment of the present invention has been described as being applied to a grown semiconductor light-emitting structure, the field of application of the substrate 20 is not limited in the present invention. In other embodiments, the substrate 20 manufactured by the above manner can also grow epitaxial layers of different materials and thicknesses according to actual needs to form other semiconductor components, such as solar cells.

Please refer to FIG. 1 and FIG. 2F. In step S200, a buffer layer is formed on the substrate. As shown in FIG. 2E, the buffer layer BL is formed on the growth surface 20S of the substrate 20.

The lattice constant of the material of the buffer layer BL can be matched with the lattice constant of the material of the semiconductor light emitting structure. In an embodiment, when the material of the semiconductor light emitting structure is gallium nitride, the material of the buffer layer BL is aluminum nitride or zinc oxide.

In addition to this, in the subsequent step of forming the semiconductor light emitting structure, the buffer layer BL can reduce thermal stress due to a difference in thermal expansion coefficient between the substrate 20 and the semiconductor light emitting structure. In an embodiment, the buffer layer BL may have a thickness of 50 to 200 nm (nano).

Further, in the present embodiment, the buffer layer BL is formed on the substrate 20 by sputtering, and the processing temperature at which the buffer layer BL is formed is between 500 ° C and 600 ° C. Compared with the organometallic chemical vapor deposition, the buffer layer BL is formed by sputtering, which makes the processing temperature lower and is advantageous for large-area fabrication. On the other hand, since the material of the substrate 20 is a metal, the processing temperature for forming the buffer layer BL by the organic metal chemical vapor phase is high, which may cause the substrate 20 to be melted.

Next, please refer to FIG. 1 and FIG. 2G. In step S300, a semiconductor light emitting structure is formed on the substrate. As shown in FIG. 2G, a semiconductor light emitting structure 30 is formed on the buffer layer BL. The semiconductor light emitting structure 30 includes a P-type semiconductor layer 31, an N-type semiconductor layer 33, and an active layer 32. The active layer 32 is located on the P-type semiconductor layer 31 and N The type semiconductor layer 33 is between and may include a single or a plurality of quantum wells. In an embodiment, the material of the semiconductor light emitting structure 30 may be a tri-five semiconductor material such as gallium nitride (GaN), gallium arsenide (GaAs), or aluminum phosphide (AlP).

The semiconductor light emitting structure 30 is formed on the buffer layer BL by physical vapor deposition. Further, the semiconductor light emitting structure 30 can be formed on the buffer layer BL by sputtering. It should be noted that in the prior art, sputtering is rarely used to fabricate a semiconductor light emitting structure, mainly because the quality of the epitaxial layer formed by sputtering is not comparable to that formed by chemical vapor deposition of an organic metal. The quality of the crystal layer, and the quality of the epitaxial layer affects the luminous efficiency and brightness of the light-emitting element M1. Accordingly, conventional sputtering is generally not the primary choice when manufacturing the semiconductor light emitting structure 30.

However, when the light-emitting element M1 is applied to a display device as a display pixel, since the number of the light-emitting elements M1 is large (possibly as many as several million), the requirements for the brightness and luminous efficiency of the single light-emitting element M1 are loose. . Accordingly, in the present invention, the semiconductor light emitting structure 30 can be formed in a large area as a main consideration. Therefore, in the embodiment of the present invention, the semiconductor light emitting structure 30 is selectively fabricated by sputtering. Thus, it is advantageous to mass-produce the light-emitting element M1, and the cost of the display device can be further reduced.

In addition, the process temperature for fabricating the semiconductor light emitting structure 30 by sputtering is relatively low compared to the organometallic chemical vapor deposition process. Therefore, the selection of the material of the substrate 20 is also large.

It should be noted that since the coefficient of thermal expansion of the metal is too different from that of the semiconductor material, at too high a process temperature, the semiconductor light-emitting structure may be overstressed and broken, or metal vapor may be generated due to high temperature, which may contaminate the cavity. Therefore, in the embodiment of the present invention, the selection of the semiconductor light emitting structure 30 by sputtering can also avoid the above problems.

Referring to FIG. 1 and FIG. 2H, in another embodiment of the present invention, after step S104 is performed, step S300 may be directly performed. That is, after the substrate 20 and the initial substrate 10 are separated, the semiconductor light emitting structure 30 can be formed directly on the growth surface 20S of the substrate 20 as shown in FIG. 2H. In other words, in this embodiment, The step of forming the buffer layer BL may be omitted.

Further, when the initial substrate 10 is a substrate having a single crystal structure, the transition surface layer SL of the underlying metal layer 21 can also have a single crystal structure as shown in FIG. 2C. When the lattice constant of the transition surface layer SL of the underlying metal layer 21 can directly match the lattice constant of the semiconductor light emitting structure 30, the buffer layer BL can also be omitted.

That is, after the thickening layer 22 is formed and the substrate 20 is separated from the initial substrate 10, the semiconductor light emitting structure 30 can be directly formed on the growth surface 20S of the substrate 20. Accordingly, the light-emitting element M2 of the present embodiment includes the substrate 20 and the semiconductor light-emitting structure 30, and the semiconductor light-emitting structure 30 is directly disposed on the growth surface 20S of the substrate 20.

In another embodiment of the present invention, the step of providing the initial substrate 10 further includes: providing a plurality of sub-substrates each having a contour that cooperates with another sub-substrate; and bonding the plurality of sub-substrates to form an initial substrate.

Referring to FIG. 3A and FIG. 3B, a schematic top view and a side view of the initial substrate before bonding are respectively shown. As shown in FIG. 3A, a plurality of sub-substrates 100 are provided first, and each sub-substrate 100 has a contour that cooperates with another sub-substrate 100. In an embodiment, the material of the sub-substrate 100 is, for example, a sapphire substrate or a semiconductor material. Specifically, the semiconductor wafer or the sapphire wafer can be cut into squares to form the sub-substrate 100. Thereafter, the sub-substrates 100 are spliced to each other. The edges 100s of the two adjacent sub-substrates 100 can cooperate with each other. Thereafter, referring to FIG. 3B, by irradiating the edge 100s of the two adjacent sub-substrates 100 with the laser light L1, the edges 100s of the two adjacent sub-substrates 100 can be partially melted and joined.

Referring to FIG. 4A and FIG. 4B, a schematic top view and a side view of the initial substrate after bonding are respectively shown. As shown in Figs. 4A and 4B, after the irradiation of the laser light L1, the plurality of sub-substrates 100' are bonded to each other to form a large-area initial substrate 10'. Thereafter, by performing steps S102 to S104 shown in Fig. 1, the initial substrate 10' can be applied to form the substrate 20 suitable for growing the semiconductor light emitting structure 30.

The initial substrate 10' of the present embodiment is compared to the initial substrate 10 in the previous embodiment. The smooth surface 10S' has a larger area. Therefore, the substrate 20 manufactured by applying the initial substrate 10' also has a larger area, and can be used to grow the semiconductor light emitting structure 30 having a large area. The light-emitting elements M1 and M2 provided by the embodiments of the present invention can be applied to an electronic device (not shown), such as a display device or a lighting device.

In other words, the electronic device may include a plurality of light emitting elements M1 (or M2). When the electronic device is a display device, the plurality of light emitting elements M1 (or M2) may be arranged in an array as a display pixel or as a backlight of the display device. In another embodiment, when the electronic device is a lighting device, a plurality of light-emitting elements M1 (or M2) arranged in an array may form a light source.

Further, since the initial substrate 10' is separated from the substrate 20 in the process of manufacturing the light-emitting element M2, the initial substrate 10' can be repeatedly applied to the manufacture of the substrate 20. Therefore, the manufacturing method of the light-emitting element M2 provided by the embodiment of the present invention can have a lower manufacturing cost than the cost required to form a large number of light-emitting elements.

In summary, one of the advantageous effects of the present invention is that the light-emitting element provided by the present invention, the method of manufacturing the same, and the electronic device using the same can pass the "initial substrate 10, 10 having smooth surfaces 10S, 10S' The upper base metal layer 21 and the thickened layer 22 are formed to form the base material 20, and the surface roughness of the growth surface 20S of the base material 20 and the surface roughness of the smooth surfaces 10S, 10S' of the initial substrate 10, 10' can be made. It is roughly the same, and meets the needs of growing semiconductor light-emitting structures.

Compared with the existing sapphire substrate and the gallium arsenide substrate, the substrate 20 provided by the embodiment of the present invention has lower cost and can be used for manufacturing the semiconductor light emitting structure 30 in a large area, which is advantageous for mass production of the light emitting element M1. . As such, when the light-emitting element M1 of the embodiment of the present invention is applied to an electronic device, the electronic device can be made to have a low manufacturing cost.

Further, since a single crystal substrate such as a conventional single crystal sapphire substrate has poor thermal conductivity, heat dissipation to the micro light-emitting diode cannot be effectively performed. In particular, when a large current passes through the high-output light-emitting diode, the temperature of the element rises, resulting in a decrease in luminous efficiency or a decrease in element life. In contrast, the present invention can select a metal material by using the material of the substrate 20 of the grown semiconductor light emitting structure 30, and thus for the light emitting elements M1, M2. In other words, it has a better heat dissipation effect.

The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (21)

A method of manufacturing a light-emitting element, comprising: providing a substrate having a growth surface, wherein the step of providing the substrate comprises: providing an initial substrate, the initial substrate having a smooth surface; forming a base metal layer On the smooth surface; forming a thickening layer on the base metal layer to form the substrate including at least the thickening layer and the base metal layer, wherein the thickening layer and the substrate The bonding strength between the base metal layers is greater than the bonding strength between the base metal layer and the initial substrate; and the substrate is peeled off from the initial substrate, wherein the surface of the base metal layer is a growth surface, wherein a difference between a surface roughness of the growth surface and a surface roughness of the smooth surface does not exceed 5 nm; and a semiconductor light-emitting structure is formed on the growth surface of the substrate. The manufacturing method according to claim 1, wherein the smooth surface has a surface roughness of not more than 2 nm, and the surface roughness of the growth surface does not exceed 5 nm. The manufacturing method according to claim 1, wherein the initial substrate is a plastic substrate, a ruthenium substrate, a ruthenium substrate, a sapphire substrate or a glass substrate. The manufacturing method of claim 1, wherein the initial substrate has a crystal orientation substrate, the base metal layer has a transition surface layer directly connecting the smooth surface, and the transition surface layer has and The initial substrate has the same crystal orientation. The manufacturing method according to claim 4, wherein a difference between a lattice constant of the transition surface layer and a lattice constant of the semiconductor light-emitting structure does not exceed 5%. The manufacturing method according to claim 1, further comprising: forming a buffer layer on the growth surface before forming the semiconductor light emitting structure. The manufacturing method according to claim 6, wherein the material constituting the buffer layer is zinc oxide or aluminum nitride. The manufacturing method according to claim 6, wherein the buffer layer is formed on the growth surface by sputtering, and a processing temperature at which the buffer layer is formed is between 500 ° C and 600 ° C. The manufacturing method of claim 1, wherein the base metal layer has a thickness of between 100 nm and 200 nm, and the thickened layer has a thickness of at least 20 μm. The manufacturing method according to claim 1, wherein the material of the thickening layer and the material of the base metal layer are selected from the group consisting of iron, cobalt, nickel, copper, molybdenum, gold, platinum, aluminum, zinc, silver, titanium. One of the groups consisting of 矽, 锗, 锗, 铪 and any combination thereof. The manufacturing method according to claim 1, wherein the base metal layer is formed on the initial substrate by sputtering or evaporation, and the thickened layer is formed on the base metal layer by electroplating. The manufacturing method according to claim 1, wherein the semiconductor light emitting structure is formed on the substrate by sputtering. The manufacturing method of claim 1, wherein the step of providing the initial substrate further comprises: providing a plurality of sub-substrates, each of the sub-substrates having a contour that cooperates with another of the sub-substrates; A plurality of the sub-substrates are joined to form the initial substrate, wherein edges of two adjacent sub-substrates are fusion bonded by laser light. A light-emitting element comprising: a substrate comprising a thickened layer and a base metal layer combined with the thickened layer, wherein the base metal layer has a growth surface, and the surface of the growth surface is rough The degree does not exceed 5 nm; and a semiconductor light emitting structure disposed on the growth surface. The light-emitting element according to claim 14, wherein the base metal layer comprises a transition surface layer having a single crystal structure, and a difference between a lattice constant of the transition surface layer and a lattice constant of the semiconductor light-emitting structure is not More than 5%. The light-emitting element of claim 14, wherein the base metal layer has a thickness of between 100 nm and 200 nm, and the thickened layer has a thickness of at least 20 μm. The light-emitting element according to claim 14, wherein the material of the thickening layer and the material of the base metal layer are selected from the group consisting of iron, cobalt, nickel, copper, molybdenum, gold, platinum, aluminum, zinc, silver, One of a group consisting of titanium, niobium, tantalum, niobium and any combination thereof. The light-emitting element according to claim 14, further comprising: a buffer layer between the light-emitting element and the substrate, wherein the buffer layer is made of zinc oxide or aluminum nitride. An electronic device comprising a plurality of light emitting elements, each of the light emitting elements comprising: a substrate comprising a thickened layer and a base gold combined with the thickened layer a genus layer, wherein the base metal layer has a growth surface, the growth surface has a surface roughness of not more than 5 nm; and a semiconductor light-emitting structure is disposed on the growth surface. The electronic device of claim 19, wherein the electronic device is a display device or a lighting device. a substrate for growing at least one epitaxial layer, the substrate comprising a thickened layer and a base metal layer combined with the thickened layer, wherein the base metal layer has a growth surface, The surface roughness of the growth surface is not more than 5 nm.