KR20070100851A - Fabrication of templates for high-quality group 3 nitride-based homoepitaxial substrate and its related light-emitting multistructure and growth of 3 nitride-based epitaxial semiconductor thin film using templates - Google Patents

Abstract

A homoepitaxial substrate for high-quality group 3 nitride-based epitaxial semiconductor thin film growth, and fabrication and growth of templates for homoepitaxial substrate and light-emitting multistructure are provided to dissipate heat generated during drive of a nitride-based semiconductor device readily. Fabrication of templates for high-quality group 3 nitride-based homoepitaxial substrate includes a one-step bonding process and a two-step bonding process. The one-step bonding process includes the steps of growing gallium nitride or aluminum nitride at a temperature of 700 degrees of centigrade or less using a metalorganic chemical vapor deposition, and depositing/growing a 3 nitride-based epitaxial semiconductor thin film on an Al2O3 growth substrate(110) using a high temperature buffer layer(130) at a temperature of 900 degrees of centigrade or more.

Description

Fabrication of templates for high-quality group 3 nitride-based homoepitaxial substrate and its related light-emitting multistructure and growth of high quality group III nitride single crystal semiconductor thin film growth of 3 nitride-based epitaxial semiconductor thin film using templates}

FIG. 1 shows the first step of sequentially stacking / growing a low temperature nucleation layer and a high temperature buffer layer on an sapphire growth substrate, and then applying an epitaxial lateral overgrowth (ELOG) growth technique. In order to achieve the above-mentioned sectional view showing a patterned window mask (window mask) through a photolithography process,

2 is After stacking / growing a thick nitride semiconductor or light emitting multilayer structure on top of the first sapphire growth substrate, a group III nitride homo epitaxial substrate or light emitting device is fabricated using a laser lift off (LLO) technique. Cross-sectional views showing trench structures known as key process technologies during the process,

    FIG. 3 is a part of a process for manufacturing a template for growing a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure according to the present invention, and a low temperature nucleation layer on a sapphire, which is the first growth substrate. ) And a high temperature buffer layer are cross-sectional views sequentially stacked / grown,

    FIG. 4 is a heat / mechanical process using basic photolithography and etching process as part of a process for fabricating a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure growth template according to the present invention. A cross-sectional view of a thermo-mechanical stress-relieving trench,

   FIG. 5 is a heat-mechanical stress relief material as part of a template fabrication process for growing a high-quality Group 3 nitride-based homoepitaxial substrate and a light emitting multilayered structure in a one-step bonding process according to the present invention. is a cross-sectional view in which stress relieving trench refilling-up and bonding materials are deposited using a thermo-mechanical stress-relieving material,

   FIG. 6 is a part of a process for fabricating a template for growing a high quality group III nitride homoepitaxial substrate and a light emitting multilayer structure in a one-step bonding process according to the present invention. Using a stress-relieving compliant substrate,

   FIG. 7 is a laser lift off as a part of a process for fabricating a template for growing a high-quality Group 3 nitride-based homoepitaxial substrate and a light emitting multilayer structure by a one-step bonding process according to the present invention. This is a cross-sectional view of sapphire separation of the first growth substrate using the LLO technique,

   8 is a part of the process for fabricating a template for growing a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure by a one-step bonding process according to the present invention. Sectional surface planarization after sapphire separation process using the LLO technique,

   FIG. 9 is an amorphous phase material as part of a process for fabricating a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure growth template by a one-step bonding process according to the present invention. 4 kinds of template cross-sectional surface patterned using

   FIG. 10 is a heat-mechanical stress-relieving material as part of a process for fabricating a template for growing a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure by a two-step bonding process according to the present invention. is a cross-sectional view in which stress relieving trench refilling-up and bonding materials are deposited using a thermo-mechanical stress-relieving material,

   FIG. 11 is a two-step bonding process according to the present invention, and is a part of a process for fabricating a template for growing a high-quality Group III nitride-based homoepitaxial substrate and a light emitting multilayer structure, and is made of a bonding material. 1 A cross-sectional view of a bonded first stress-relieving compliant substrate,

   12 is a part of the process for fabricating a template for growing a high quality group III nitride homoepitaxial substrate and a light emitting multilayer structure by a two-step bonding process according to the present invention. This is a cross-sectional view of sapphire separation of the first growth substrate using the LLO technique,

   FIG. 13 shows a laser lift off as a part of a process for manufacturing a template for growing a high-quality Group III nitride homoepitaxial substrate and a light emitting multilayer structure by a two-step bonding process according to the present invention. Sectional surface planarization after sapphire separation process using the LLO technique,

   FIG. 14 is a stress relaxation trench as part of a process for fabricating a template for growing a high-quality Group 3 nitride-based homoepitaxial substrate and a light emitting multilayer structure by a two-step bonding process according to the present invention. Is a cross-sectional view of refilling up,

   FIG. 15 is a two-step bonding process according to the present invention, which is a part of a process for producing a template for growing a high-quality group III-nitride-based epitaxial substrate and a light emitting multilayer structure, using a bonding material. A cross-sectional view of bonding a second stress-relieving compliant substrate,

    FIG. 16 is a two-step bonding process according to the present invention, which is a part of a process for fabricating a template for growing a high-quality Group 3 nitride-based homoepitaxial substrate and a light emitting multilayer structure. 1 A cross section in which the first stress-relieving compliant substrate is completely removed,

   FIG. 17 is an amorphous phase material as part of a process for fabricating a high quality group III nitride homoepitaxial substrate and a light emitting multilayer structure growth template by a two-step bonding process according to the present invention. 4 kinds of template cross-sectional surface patterned using

     FIG. 18 is a group III nitride homo-epitaxial substrate and templates for growth of light emitting multilayer structures, which are created / produced by the one-step and two-step bonding process of the present invention. A cross-sectional view showing a part of a process of laminating / forming a group III nitride-based homoepitaxial substrate and a light emitting multilayer structure thin film layer on an upper layer of an electrically conductive supporting substrate,

   FIG. 19 shows a group III nitride homoepitaxial substrate and templates for growing a multi-layered light emitting structure, which are created / produced by the one-step and two-step bonding process of the present invention. A cross-sectional view showing a part of a process of laminating / forming a group III nitride-based homoepitaxial substrate and a light emitting multilayer structure thin film layer on an upper layer of an electrically conductive supporting substrate,

   FIG. 20 shows a group III nitride homoepitaxial substrate and templates for growing a multi-layered light emitting layer structure invented / manufactured by the one-step and two-step bonding process of the present invention. A cross-sectional view showing a part of a process of laminating / forming a group III nitride-based homoepitaxial substrate and a light emitting multilayer structure thin film layer on an upper layer of an electrically conductive supporting substrate,

   FIG. 21 is a group III nitride homo-epitaxial substrate and templates for growth of light emitting multilayer structures invented / manufactured by the one-step and two-step bonding process of the present invention. A cross-sectional view of a group III nitride-based homoepitaxial substrate and a light emitting multilayer structure thin film layer formed on an upper layer of an electrically conductive supporting substrate.

The present invention relates to a homoepitaxial substrate and a light emitting multilayer structure formed of a group III nitride semiconductor material for fabricating electronic and optical devices using a group III nitride-based epitaxial semiconductor. Fabrication of templates for homoepitaxial substrate and light-emitting multistructures and growth of group 3 nitride-based epitaxial semiconductor thin films, specifically in thermal Laser lift off (LLO) techniques, wafer bonding techniques, and etching using thermo-mechanical stress-relieving trenches and refilling-up materials Represented as a group III nitride semiconductor material using the etching process, i.e., the chemical formula AlxInyGazN (x, y, z: integer) The invention relates to the production of high quality homoepitaxial substrates and templates for growing light emitting multilayer structures. In addition, the conventional well-known bonding of the high quality group III-nitride single crystal semiconductor single layer or multilayer structure deposited / grown on the upper layer of the homoepitaxial substrate and the light emitting multilayer structure growth template produced by the present invention It is directly related to the fabrication of next-generation group III-nitride-based electronics or optoelectronics by transferring to a supporting substrate having electrical and thermally excellent conductivity by bonding technology.

   Recently, due to the industrial development, the demand for semiconductor devices using a group III nitride based single crystal semiconductor thin film layer structure having high reliability compared to existing electronic and optical devices is increasing rapidly. In particular, light emitting diodes (LEDs) and laser diodes (LDs), which are nitride-based semiconductor devices, are drawing attention as next-generation white light sources and mass storage media, respectively. ), An epitaxial thin film layer formed by combining a group III element composed of indium (In), gallium (Ga), and nitrogen (N) with sapphire (Al 2 O 3), which is electrically insulating, depending on the purpose of use. It is manufactured by stacking / growing a multilayer thin film structure such as pn-junction, double heterostructure, single quantum well (SQW), or multi-quantum well (MQW) on top of conductive silicon (Si) or silicon carbide (SiC) growth substrate. It is commercialized in a wide range of real life and industrial sites. The above structure is omitted because it is a relatively well known knowledge to all those involved in the industry and research.

   However, despite the widespread commercialization of these semiconductor devices, there are still many difficulties in the fabrication of various high-quality semiconductor devices using group III-nitride-based single crystal semiconductor thin film layers due to the homogeneous substrate member as follows. It is a situation that exists.

   First, as described above, electrically insulating sapphire (Al 2 O 3) or electrically conductive silicon (Si) and silicon carbide (SiC) single crystal substrate materials are used as a group III nitride based single crystal semiconductor growth substrate. However, due to the large difference in lattice constant and thermal expansion coefficient between these first growth substrates and the group III-nitride semiconductors, the potentials at the time of stacking / growing the group III nitride single crystal semiconductor thin film structure High concentrations of crystallographic defects including dislocations occur, and crystallographic defects introduced during growth when driving LDs and LEDs, which are high-frequency / high-capacity electronic devices, and large-capacity / high-brightness light emitting devices Non-radiative recombination, which is an abnormal conduction of electron and hole carriers, and the optically inefficient energy conversion mechanism of electrons and hole carriers. Due to the phenomenon, a large amount of heat is generated, and as a result, a device using a group III nitride single crystal semiconductor thin film layer structure It is of significantly compromising the overall performance and reliability.

   In addition, another serious problem caused by the absence of homoepitaxial substrates is that they can dissipate large amounts of heat generated when driving semiconductor devices into the air. There is no significant impact on the overall reliability and lifetime of the semiconductor device. In particular, the growth of the light emitting multilayer structure for the LED using the group III nitride-based single crystal semiconductor thin film layer structure and the fabrication of the LED using the same use an electrically insulating Al2O3 substrate. In other words, since Al2O3 substrates have electrical and thermally bad electrical properties, vertical LEDs cannot be fabricated, and in addition, the N-type nitride cladding layer (n) is combined by dry etching process. A type-type nitride cladding layer is exposed to the air, i.e., a mesa-structured LED. The production of light emitting diodes of the Group III nitride-based mesa structure described above causes a high cost and serious current crowding when the device is driven. As a next-generation large area / high-capacity high-brightness light source device, Inappropriate.

   As shown in Fig. 1-A, in order to suppress the high dislocation density caused by the large lattice constant and thermal expansion coefficient between the group III-nitride-based single crystal semiconductor thin film layer material and the substrate, (1) 700 degrees or less At the temperature, a thin low temperature nucleation layer 20, such as gallium nitride (GaN) or aluminum nitride (AlN), formed on the first sapphire growth substrate 10 at a temperature, and the formula AlxInyGazN (x, y, z: integer) thick high temperature buffer layer (30) growth (2) amorphous silicon oxide (Si-O) or silicon nitride (Si-N) used as window mask (40) Evaporation (3) ELOG (eptaxial lateral overgrowt) using a template prepared through amorphous silicon oxide (Si-O) or silicon nitride (Si-N) patterning process by general photolithography h) It has been reported in the literature that a group III nitride based single crystal semiconductor thin film structure with low crystallographic defect concentration can be obtained by introducing / applying a growth technique. In addition, as shown in Figure 1-B, (1) a low temperature nucleation layer (low) such as gallium nitride (GaN) or aluminum nitride (AlN) formed on the first sapphire growth substrate 10 at a temperature of 700 degrees or less (low) temperature nucleation layer (20) and a thick high temperature buffer layer (30) grown by the formula AlxInyGazN (x, y, z: integer) at temperatures above 700 degrees; (2) photoresist and silicon oxide ( By using a material used as an etching mask such as Si-O), a PEDIO growth technique using a template prepared through a patterning process step through a dry etching process is introduced / applied. It has also been reported in many documents that a high quality group III-nitride single crystal semiconductor thin film structure with low crystallographic defect concentration can be obtained. The above-described ELOG and PENDIO growth techniques are well-known techniques, and silicon oxide (Si-O), which is an amorphous window mask layer 40 in which a nitride-based semiconductor thin film is not grown when a single crystal semiconductor thin film is grown. And the group III nitride single crystal semiconductor thin film layer using aluminum oxide (Al 2 O 3) induces preferential growth in the lateral direction instead of the vertical direction with respect to the surface only in the upper layer of the crystalline nitride semiconductor. It is to grow a low density single crystal nitride semiconductor thin film.

   On the other hand, a large amount of heat generated when driving electronic and optoelectronic devices, including group III-nitride transistors, light emitting diodes (LEDs), and laser diodes (LDs), is smoothly dissipated to the outside. As shown in FIG. 2, a laser beam is a strong energy source after growing a group III nitride-based single crystal semiconductor thin film structure having a low dislocation density on an upper layer of the first growth substrate sapphire material through an ELOG growth technique. A high quality group III-nitride-based single crystal semiconductor thick film layer (or homoepitaxial substrate) or light emission by incorporating a laser lift-off (LLO) technique that irradiates a laser beam through a transparent sapphire back surface to completely remove the sapphire growth substrate. Multi-layered structures are being manufactured, and the current trend is achieved using the single-crystal semiconductor thick film layer and the light-emitting multilayered structure. It is partially applied to the production of electronic and optical devices associated. In particular, when fabricating a light emitting diode (LED) device by introducing a laser lift-off (LLO) process known to date, specimens prepared before separating a sapphire growth substrate have a common feature, as shown in FIG. 2 (A). The low temperature nucleation layer 20, the high temperature buffer layer 30, and the light emitting structure 50 composed of multiple layers are sequentially stacked and grown on the substrate sapphire 10, and then thermal / mechanical shocks generated from the LLO technique are applied. In order to minimize, as shown in FIG. 2 (B), according to the size and shape of the LED to be fabricated, the trench is made only up to the high temperature buffer layer 30, and the trench refilling-up and relaxation substrate or support substrate is made. After bonding the 60, a laser beam, which is a strong energy source, is irradiated to completely separate the thermally and electrically insulating sapphire substrate. As described above, when the LLO technique is used to fabricate a large area / high-capacity high-brightness light emitting diode, the overall electrical, thermal, and optical characteristics are improved, but due to the low product yield problem and the thermal / mechanical impact generated by the LLO technique. The problem of device reliability due to this remains a problem to be solved.

 The present invention relates to a homoepitaxial substrate and a light emitting multilayer structure formed of a group III nitride semiconductor material for fabricating electronic and optical devices using a group III nitride-based epitaxial semiconductor. Fabrication of templates for homoepitaxial substrate and light-emitting multistructures and growth of group 3 nitride-based epitaxial semiconductor thin films, specifically in thermal Laser lift off (LLO) techniques, wafer bonding techniques, combined with mechanical-mechanical stress-relieving trenches and refilling-up materials; and A group III nitride semiconductor material, ie, the chemical formula AlxInyGazN (x, y, z: integer), is used in the etching process. Relates to a template for making homo epitaxial growth substrate and the light-emitting multilayer structure of good quality. In addition, the process of fabricating a template for growing a homo-epitaxial substrate and a light-emitting multilayer structure formed of the group III-nitride semiconductor is classified into two bonding processes according to the number of times of stress-relieving compliant substrate. . It is classified into a one-step bonding process using only once and a two-step bonding process using twice.

  On the other hand, the high-quality group III-nitride single crystal semiconductor single layer or multilayer structure laminated / grown on the upper layer of the homo epitaxial substrate and the light emitting multilayer structure growth template manufactured by the present invention is electrically and Next-generation group 3, which can transfer to the upper layer of a supporting substrate having a thermally excellent conductivity to easily dissipate a large amount of heat generated when driving a large area / large-capacity nitride-based semiconductor device to the outside It is intended to fabricate vertically structured electronics and vertically structured optoelectronics.

The final object of the present invention is to produce a next generation large area / high capacity vertical light emitting device by stacking / forming a group III nitride based single crystal semiconductor thin film structure on an upper layer of a support substrate having excellent electrical and thermal conductivity. For this purpose, first, a group III nitride single crystal semiconductor thin film structure is formed of a group III nitride semiconductor, a homo epitaxial substrate, silicon (Si), gallium arsenide (GaAs), Alternatively, a high quality group 3 nitride-based epitaxial semiconductor multistructure must be deposited / grown on top of electrically and thermally superior conductive materials such as general metals and alloys. As described above, due to the difficulty of stacking / growing a high quality nitride based semiconductor thin film layer on the homoepitaxial substrate member formed of the Group 3 nitride based semiconductor for growing the group 3 nitride based semiconductor thin film layer and the conductive substrate, There are many limitations in the fabrication of nitride based light emitting devices.

   In order to overcome the above problems, the present invention uses a laser lift-off (LLO) technique to separate / remove the stacked / grown group III nitride semiconductor thin film layer from the sapphire growth substrate. Significantly different process sequences and thermo-mechanical stress-relieving trenches and refilling materials to minimize thermo-mechanical stress damage caused by the introduction of LLO techniques. The up material and the stress-relieving compliant substrate were fabricated to prepare a template for growing the homoepitaxial substrate and the light emitting multilayer structure.

   The homoepitaxial substrate and the light emitting multilayer structure growth template were fabricated through a one-step and two-step bonding process. Template fabrication by a one-step bonding process using only one stress-relieving substrate consists of seven consecutive process steps as follows.

   (1) Lamination and growth of a low temperature nucleation layer and a high temperature buffer layer on top of the first sapphire growth substrate

   (2) Fabrication of thermo-mechanical stress-relieving trenches through basic photolithography and etching processes

   (3) Deposition of thermo-mechanical stress-relieving refilling-up materials and bonding materials

   (4) Bonding to a compliant substrate using a bonding material

   (5) First sapphire growth substrate separation through laser lift off (LLO) technique

   (6) surface planarization process

   (7) Template creation by refilling amorphous phase material

   In addition, a template for growing a homoepitaxial substrate and a light emitting multilayer structure was fabricated through a two-step bonding process using a stress-relieving compliant substrate twice.

   (1) Lamination and growth of a low temperature nucleation layer and a high temperature buffer layer on top of the first sapphire growth substrate

   (2) Fabrication of thermo-mechanical stress-relieving trenches through basic photolithography and etching processes

   (3) Deposition of thermo-mechanical stress-relieving refilling-up materials and bonding materials

   (4) adhesion of a first stress-relieving compliant substrate using a bonding material;

   (5) First sapphire growth substrate separation through laser lift off (LLO) technique

   (6) surface planarization process

   (7) Stress relief trench refilling-up and bonding material deposition through amorphous phase material.

   (8) bonding of a second stress-relieving compliant substrate with a bonding material

   (9) Separation of bonding material and first stress relief substrate through etching process

   (10) Template creation by refilling amorphous phase material

   In addition, a high-quality group III-nitride layer deposited / grown on an upper layer of a homo epitaxial substrate and a light emitting multilayer structure growth template prepared through the one-step and two-step bonding processes. Vertical structure formed by group III-nitride semiconductor by transferring the semiconductor thin film layer to the upper layer of the supporting substrate which has excellent electrical and thermal conductivity using bonding and etching process technology To manufacture electronic and photorelated devices.

   Hereinafter, with reference to the accompanying drawings will be described in more detail a method for producing a large area and large-capacity nitride epitaxial substrate and light emitting multilayer template templates for the production of nitride-based electronic and optical-related devices of the present invention . In addition, by using the template produced by the present invention, a high quality group III-nitride-based single crystal semiconductor thin film structure is laminated / grown on the upper layer, and bonded to the bonding and etching process technology to support electrical and thermally excellent substrates. Substrate transfer to the upper layer is also described in detail.

   As shown in FIG. 3, in the production of templates for growing a homo-epitaxial substrate and a light emitting multilayer structure through the one-step bonding process and the two-step bonding process, As a first step, a low temperature nucleation layer, which is formed on the upper layer of the first sapphire (Al2O3) growth substrate 110 using hydride vapor phase epitaxy (HVPE) or metalorganic chemical vapor deposition (MOCVD) as a single crystal semiconductor thin film growth equipment, 120) to grow gallium nitride (GaN) or aluminum nitride (AlN) at a temperature of 700 degrees or less, and a high temperature buffer layer (130) of the formula AlxInyGazN (x, y, z: integer) A high quality group III-nitride semiconductor thin film layer represented by) is laminated / grown by a known method.

   As shown in FIG. 4, in the production of templates for growing a homo-epitaxial substrate and a light emitting multilayer structure through the one-step bonding process and the two-step bonding process, As a two-step process, square patterning and a dry etching process are performed through a general photolithography process.

   4-A, 4-B, and 4-C, a dry etching mask composed of photoresist (PR), silicon oxide (Si-O), or various other materials on the high temperature buffer layer 130 is provided. Depositing the material layer 140 and using low temperature nucleation through trenches 150 in the transverse and longitudinal directions using a dry etching process for known nitride-based semiconductors. The layer 120 and the high temperature buffer layer 130 are made in an isolated shape in a square as shown in FIGS. 4-D.

The square patterning process has two important parameters that are unique compared to existing trench forming techniques for applying the LLO technique: trench depth ( h ) and width ( a ), and a square patterned cold nucleation layer. It is the length b of one side at 120 and the high temperature buffer layer 130. Appropriate trench depth and width, and the length of one side of the square can minimize thermal / mechanical impact when introducing the LLO technique. Therefore, in the present invention, unlike the trench (trench) introduced in the conventional LLO technique, the trench is etched completely to the top of the sapphire growth substrate, and in the cold nucleation layer and the high temperature buffer layer patterned with the trench width ( a ) and the square, The side length b plus a + b must be equal to or smaller than the diameter d of the laser beam used in the LLO technique. In other words, the trench etch depth h should be performed up to the upper layer of sapphire, which is a growth substrate, and the patterning process should be performed to satisfy a + b ≦ d.

  As shown in FIG. 5, in the production of templates for growing a homo-epitaxial substrate and a light-emitting multilayer structure through the one-step bonding process, a thermal / mechanical method is introduced when the LLO technique is introduced as a third step process. In order to minimize stress, the trench space 210 may be formed of various oxides including silicon oxide (Si-O), zinc oxide (Zn-O), indium tin oxide (ITO), lithium naobate (LiNbO3), and the like. Nitrides, including silicon nitride (Si-N), gallium nitride (Ga-N), aluminum nitride (Al-N), titanium nitride (Ti-N), chromium nitride (Cr-N), Various metals and alloys including chromium (Cr), silicon (Si), gold (Au), silver (Ag), palladium (Pd), titanium (Ti), tungsten (W), molybdenum (Mo), or the like, or Single and multi-layered polymeric materials, including wax, epoxy, photoresist, etc. Refilling up in the form of an i-layer. In addition, the silicon oxide-based (Si-OX) (X: third element) bonding material layer 220, which is thermally / chemically stable in a high temperature of more than 1000 degrees and hydrogen (H2) and ammonia (NH3) gas atmosphere, is a high temperature buffer layer. (130) It is laminated on the upper layer, wherein the bonding material layer 220 must include at least silicon (Si) or silicon oxide (Si-O).

   As shown in FIG. 6, in the fabrication of templates for growing the homoepitaxial substrate and the light emitting multilayer structure through the one-step bonding process, LLO as the fourth step process (FIG. 1 -D) The technique bonds a stress-relieving compliant substrate 240 that relieves the thermal / mechanical stress effects generated when the first growth substrate, sapphire, is separated. A thermally / chemically stable thin silicon oxide-based (Si-OX) (X: third element) bonding material layer 230 is laminated / formed on one surface of the stress relaxation substrate 240 and a known wafer bonding The stress relaxation substrate 240 is bonded to the high temperature buffer layer 130 patterned by the trench. The relaxed substrate 240 used in this step is preferably a crystalline material similar to the thermal expansion coefficient of sapphire (Al 2 O 3), silicon (Si), or silicon oxide (Si-O).

   As shown in FIG. 7, in the fabrication of templates for growing homo-epitaxial substrates and light emitting multilayer structures through the one-step bonding process, a laser beam is a uniform and strong energy source as a fifth step process. A laser beam is scanned on the back-side of the transparent sapphire growth substrate 110 to completely remove / separate the sapphire substrate. The process uses the LLO technique, which uses many suitable laser beams known, including KrF excimer lasers. Many people in this field are familiar with the basic principles of the LLO technique, and therefore, detailed descriptions thereof are omitted in the present invention.

    As shown in FIG. 8, in the fabrication of homo epitaxial substrates and light emitting multilayer structure growth templates through the one-step bonding process, a sapphire growth substrate through the LLO technique is used as a sixth step process. After removal / separation, the surface planarization completely removes the materials refilled in the trench space 210 and the low temperature nucleation layer 120 through various etching processes, thereby allowing the homoepitaxial substrate and the light emitting multilayer structure. A growth template is produced.

   As shown in FIG. 9, in the production of templates for growing a homo-epitaxial substrate and a light-emitting multilayer structure through the one-step bonding process, a seventh step, that is, HVPE and MOCVD growth as a final process When the trench space 250 is not refilled with any material (9-A) before the lamination / growth of the thin film layer structure formed of the group III-nitride semiconductor using the equipment, the amorphous phase material Phosphorus silicon oxide (Si-O) and silicon nitride (Si-N) are stacked to a height lower than the surface of the high temperature buffer layer 130 (9-B), an amorphous phase material of silicon oxide (Si -O) and silicon nitride (Si-N), etc., stacked only up to the same height as the surface of the high temperature buffer layer 130 (9-C), or silicon oxide (Si-O) and silicon nitride (Si-), which are amorphous phase materials. N) higher than the surface of the high temperature buffer layer 130 If it is laminated up to this point (9-D) can be made.

   In particular, FIGS. 9-A and 9-B are similar to the patterning and growth principles used in the PENDIO technique described above, while FIGS. 9-C and 9-D are used in the ELOG technique described above. According to the patterning and growth principles described above, it is possible to grow a semiconductor homoepitaxial substrate and a light emitting multilayer structure represented by the chemical formula, Al x In y Ga z N (x, y, z: integer) on top of these templates.

   As shown in FIG. 10, the first and second steps described above are used as a third step in the production of the template for growing the homoepitaxial substrate and the light emitting multilayer structure through the two-step bonding process. In order to minimize thermal / mechanical stress when LLO technique is applied to the samples manufactured through the process, the trench space 310 may be formed of silicon oxide (Si-O), zinc oxide (Zn-O), and indium tin oxide (ITO). ), Various kinds of oxides including lithium naobate (LiNbO3), silicon nitride (Si-N), gallium nitride (Ga-N), aluminum nitride (Al-N), titanium nitride (Ti-N), Nitrides including chromium nitride (Cr-N), chromium (Cr), silicon (Si), gold (Au), silver (Ag), palladium (Pd), titanium (Ti), tungsten (W) ), Various metal materials and alloys including molybdenum (Mo), waxes, epoxy, photoresist, etc. Refilling-up of single and multi-layer forms with olymeric materials. It can also be easily dissolved in alcohol solutions, including acetone and thin silicon oxide (Si-OX) (X: third element) materials that can be easily removed from etching solutions such as acids or bases. A photoresist, wax, epoxy, or ethyl-cyanoacrylate-based bonding material 320 may be deposited on the high temperature buffer layer 130.

   As shown in FIG. 11, in the fabrication of templates for growing the homoepitaxial substrate and the light emitting multilayer structure through the two-step bonding process, the first growth was performed using the LLO technique as a fourth step process. A first stress-relieving compliant substrate 340 is bonded to relieve thermal / mechanical stress generated when separating the sapphire substrate. On one surface of the first stress relaxation substrate 340 and a thin silicon oxide (Si-OX) (X: third element) material which can be easily removed from an etching solution such as an acid or a base. Laminate / form a photoresist, wax, epoxy, or ethyl-cyanoacrylate-based bonding material layer 330 that can be easily dissolved in an alcohol solution, including acetone, and known wafer bonding. The first stress relaxation substrate 340 is bonded to the high temperature buffer layer 130 patterned by the trench by a wafer bonding technique. The first stress relaxation substrate 340 used in this step is preferably a crystalline material similar to the coefficient of thermal expansion of sapphire (Al 2 O 3), silicon (Si), or silicon oxide (Si-O).

    As shown in FIG. 12, in the fabrication of templates for growing homo-epitaxial substrates and light emitting multilayer structures through the two-step bonding process, a laser beam is a uniform and strong energy source as a fifth step process. The laser beam is scanned on the back-side of the transparent sapphire growth substrate 110 to completely separate the sapphire substrate. The process uses the LLO technique, which uses many known laser beams, including KrF excimer lasers. Many people in this field are familiar with the basic principles of the LLO technique, and therefore, detailed descriptions thereof are omitted in the present invention.

   As shown in FIG. 13, in the fabrication of homo epitaxial substrates and light emitting multilayer structure growth templates through the two-step bonding process, a sapphire growth substrate through the LLO technique is used as a sixth step process. After the separation, the planarization operation for completely removing the materials refilled in the trench space 310 and the low temperature nucleation layer 120 is performed through various etching processes.

   As shown in FIG. 14, in the fabrication of templates for growing a homo-epitaxial substrate and a light emitting multilayer structure through the two-step bonding process, a group III nitride-based semiconductor is used as a seventh step. Before stacking / growing the thin film layer structure to be formed, the trench space 350 can be easily removed from an etching solution such as an acid or a base (Si-OX) (X: third element). A trench refilling process is performed in which the material is stacked only to the same height as the surface of the high temperature buffer layer 130.

   As shown in FIG. 15, in the production of templates for growing a homo-epitaxial substrate and a light-emitting multilayer structure through the two-step bonding process, as an eighth step, high temperature and hydrogen (at least 1000 degrees) A second stress-relieving compliant substrate 360 must be bonded to relieve the thermal / chemical stress effects occurring in H2) and ammonia (NH3) gas atmospheres. This second stress relaxation substrate 360 adhesion is a known wafer bonding using a thermally / chemically stable thin silicon oxide (Si-OX) (X: third element) bonding material layer 370. Performed by skill. The second stress relaxation substrate 360 used in this step is preferably a crystalline material similar to the coefficient of thermal expansion of sapphire (Al 2 O 3), silicon (Si), or silicon oxide (Si-O).

    As shown in FIG. 16, in the fabrication of templates for growing a homo-epitaxial substrate and a light emitting multilayer structure through the two-step bonding process, an alcohol including acetone is used as a ninth step process. And surface planarization to completely remove the materials refilled in the trench space 350, the bonding materials 320 and 330, and the first stress relaxation substrate 340 by using the etching solution.

   As shown in FIG. 17, in the fabrication of templates for growing homo-epitaxial substrates and light-emitting multilayer structures through the two-step bonding process, a tenth step, that is, HVPE and MOCVD growth as a final process If the trench space 380 is not refilled with any material (17-A) prior to laminating / growing a thin film layer structure formed of group III-nitride-based semiconductors using the equipment, the amorphous phase material Phosphorus silicon oxide (Si-O) and silicon nitride (Si-N) are laminated to a height lower than the surface of the high temperature buffer layer 130 (17-B), an amorphous phase material of silicon oxide (Si -O) and silicon nitride (Si-N), etc., stacked only up to the same height as the surface of the high temperature buffer layer 130 (17-C), or silicon oxide (Si-O) and silicon nitride (Si-), which are amorphous phase materials. N) and the like higher than the surface of the high temperature buffer layer 130 When stacking up to the height it can be made of (17-D).

   In particular, FIGS. 17-A and 17-B are similar to the patterning and growth principles used in the PENDIO technique described above, while FIGS. 17-C and 17-D are used in the ELOG technique described above. According to the patterning and growth principles described above, it is possible to grow a semiconductor homoepitaxial substrate and a light emitting multilayer structure represented by the chemical formula, Al x In y Ga z N (x, y, z: integer) on top of these templates.

    As shown in FIG. 18, the homo-epitaxial substrate and the light emitting multilayer structure growth templates formed through the one-step and two-step bonding processes (18-A, 18-B) AlxInyGazN (x, y, z: Integer) semiconductor thin film layer 410 used as homoepitaxial substrate and light emitting multilayer thin film layer using HVPE or MOCVD, which is known as the most useful equipment for growing group III nitride-based semiconductor. , 420 are laminated / grown in a high temperature of 700 degrees or higher and a hydrogen (H2) and ammonia (NH3) gas atmosphere. In particular, the first semiconductor thin film layer 410 grown directly on the high temperature buffer layer 130 may be grown at a lower temperature than the second semiconductor thin film layer 420.

   As shown in FIG. 19, the upper layer of the epitaxial substrate and the light emitting multilayer structure growth templates prepared through the one-step and two-step bonding processes (19-A, 19-B) Lamination / growth of AlxInyGazN (x, y, z: Integer) semiconductor thin film layers 410 and 420 used as homoepitaxial substrates and light emitting multilayer thin film layers, followed by electroplating Various known wafer bonding techniques, such as chemical methods and fusion bonding using molten metal or alloy, are used to form a supporting substrate 430 having excellent electrical and thermal conductivity.

   As shown in FIG. 20, the upper epitaxial substrate and the light emitting multilayer structure growth templates prepared through the one-step and two-step bonding processes (20-A, 20-B) A lamination / growth of AlxInyGazN (x, y, z: integer) semiconductor thin film layers 410 and 420 used as a homo-epitaxial substrate and a light emitting multilayer structure thin film layer, and a supporting substrate having excellent electrical and thermal conductivity ( After bonding the supporting substrate 430, the etching techniques completely remove the materials re-filled in the trench spaces 250 and 380, the bonding material layers 220, 230 and 370, and the relaxed substrates 240 and 360. / Separate

   As shown in FIG. 21, upper portions of the homo-epitaxial substrate and the light emitting multilayer structure growth templates prepared through the one-step and two-step bonding processes (21-A, 21-B) a supporting substrate having excellent electrical and thermal conductivity through a surface planarization process for etching an AlxInyGazN (x, y, z: integer) semiconductor thin film layer used as a homo-epitaxial substrate and a light emitting multilayer structure thin film layer; 430) The final high quality homo epitaxial substrate and light emitting multilayer structure are fabricated.

As described so far, the present invention provides a template for growing a homo-epitaxial substrate and a light emitting multilayer structure for growing a group III nitride based single crystal semiconductor thin film structure of high quality, and related process technology development, and a template upper layer fabricated. The present invention relates to the fabrication / growth of a homo-epitaxial substrate and a light emitting multilayer structure thin film layer for a group III-nitride semiconductor.

   In other words, using the laser lift-off (LLO) technique according to the present invention / proposed process sequence and method, the thermal / mechanical impact occurring in the sapphire (Al2O3) separation process, which is the first growth substrate. Since damage and thin film bending can be completely prevented, it is possible to easily manufacture homo epitaxial substrates for high-grade group III-nitride-based electronic and optical-related devices and templates for growing light emitting multilayer structures. At the same time, it is expected that these templates can be used to fabricate next-generation large-capacity and large-area electronic and optoelectronic devices with high device reliability.

Claims (12)

    In order to minimize the thermal / mechanical stress generated when the laser lift-off (LLO) technique is introduced, the stress-relieving trench and the stress-relieving trench and refilling material created / fabricated by the present invention Homo epitaxial substrates formed of Group III nitride-based semiconductors by incorporating up materials, wafer bonding process technology, and stress-relieving compliant substrates, and templates for growth of light emitting multilayer structures. The silicon oxide (Si-) is composed of a single layer or a bi-layer patterned in a square shape having a certain size side on the top layer of sapphire (Al2O3), the first growth substrate like a checkerboard. O) and group 3 nitride-based epitaxial semiconductor layers are stacked / grown sequentially and continuously. Between ningdoen square (square patterned) has a trench (trench) having a predetermined width (width) sapphire (sapphire) etching / are formed to the upper part.    The homo-epitaxial substrate and the light emitting multilayer structure growth templates formed of another group III-nitride-based semiconductor include silicon oxide (Si-O) having a single layer or a double layer structure and a group III nitride single crystal semiconductor layer (group 3). A trench formed between a square composed of a nitride-based epitaxial semiconductor layer, and the same height, a lower height, or a higher height as a group III nitride-based semiconductor layer having an amorphous phase material as the uppermost layer in a trench formed between the squares. It also includes having a filling-up form.      The method of claim 1,      Thermo-mechanical stress-relieving trenches and refilling-up materials and wafer bonding to minimize thermal / mechanical stresses caused by the laser lift-off (LLO) technique. Process technology, and stress-relieving compliant substrates in combination to produce templates for growth of homoepitaxial substrates and light emitting multilayer structures,    (1) Lamination and growth of a low temperature nucleation layer and a high temperature buffer layer on top of the first sapphire growth substrate    (2) Fabrication of thermo-mechanical stress-relieving trenches through basic photolithography and etching processes    (3) Deposition of thermo-mechanical stress-relieving refilling-up materials and bonding materials    (4) Bonding to a compliant substrate using a bonding material    (5) First sapphire growth substrate separation through laser lift off (LLO) technique    (6) surface planarization process    (7) Template creation by refilling amorphous phase material Apply a one-step bonding process that uses a stress-relieving substrate only once, as in the process sequence.     The method of claim 1,     In order to minimize the thermal / mechanical stress generated by the laser lift-off (LLO) technique, stress-relieving trenches, thermo-mechanical stress-relieving trenches and refilling-up materials, and wafer bonding Process technology, and stress-relieving compliant substrates in the process of manufacturing templates for growth of homoepitaxial substrates and light emitting multilayer structures,    (1) Lamination and growth of a low temperature nucleation layer and a high temperature buffer layer on top of the first sapphire growth substrate    (2) Fabrication of thermo-mechanical stress-relieving trenches through basic photolithography and etching processes    (3) Deposition of thermo-mechanical stress-relieving refilling-up materials and bonding materials    (4) adhesion of a first stress-relieving compliant substrate using a bonding material;    (5) First sapphire growth substrate separation through laser lift off (LLO) technique    (6) surface planarization process    (7) Stress relief trench refilling-up and bonding material deposition through amorphous phase material.    (8) bonding of a second stress-relieving compliant substrate with a bonding material    (9) Separation of bonding material and first stress relief substrate through etching process    (10) Template creation by refilling amorphous phase material Apply a two-step bonding process that uses twice the stress relief substrate as the process sequence.     The method according to claim 1, 2, 3,     The LLO technique must be introduced to fabricate homoepitaxial substrates and light-emitting multistructure growth templates for the growth of high quality Group III-nitride-based single crystal semiconductor thin films. Trench fabrication to mitigate thermal / mechanical stresses is fully etched up to the top of the sapphire growth substrate, and the trench width and one side length of the patterned squares ( The sum of the lengths (width + length) must be equal to or less than the diameter of the laser beam used in the LLO technique.     The method according to claim 1, 2, 3,    Refilling stress relief trenches used to fabricate homoepitaxial substrates and light-emitting multistructure growth templates for growing Group III nitride-based single crystal semiconductor thin-films of high quality Refilling-up materials include various oxides and silicon nitrides including silicon oxide (Si-O), zinc oxide (Zn-O), indium tin oxide (ITO), and lithium naobate (LiNbO3). Nitrides, chromium (Cr), including (Si-N), gallium nitride (Ga-N), aluminum nitride (Al-N), titanium nitride (Ti-N), chromium nitride (Cr-N), etc. ), Various metals and alloys including wax (wax), silicon (Si), gold (Au), silver (Ag), palladium (Pd), titanium (Ti), tungsten (W), molybdenum (Mo), etc. Various polymer materials including epoxy, photoresist, etc. in single layer and multi-layer form That layer.     The method according to claim 1, 2, 3,     As a bonding material used to fabricate homoepitaxial substrates for growing Group III nitride-based single crystal semiconductor thin film layers and templates for growing light-emitting multistructures, ) Or photos readily soluble in alcohol solutions, including acetone and thin silicon oxide (Si-OX) (X: third element) materials that can be easily removed from base etch solutions Photoresist, wax, epoxy, or ethyl cyanoacrylate-based materials are used.    The method according to claim 1, 2, 3,    Stress-relieving substrates used to fabricate homoepitaxial substrates for growing Group III nitride-based single-crystal semiconductor thin film layers and templates for growing light-emitting multistructures. It is preferable to use a material similar to the thermal expansion coefficient of sapphire (Al 2 O 3), silicon (Si), gallium arsenide (GaAs), aluminum nitride (AlN), and silicon oxide.    The formula AlxInyGazN (x, y, z used as a homo-epitaxial substrate and a light-emitting multilayer structure thin film layer by using HVPE or MOCVD on the upper layer of the epitaxial substrate and light-emitting multilayer structure growth invented / manufactured by the present invention. : Group III-nitride-based single crystal semiconductor thin film layer represented by (integer) is laminated / grown in a single layer or multilayered structure at a high temperature of 700 degrees or higher and a hydrogen (H 2) and ammonia (NH 3) gas atmosphere. In particular, in the thin film layer having a multi-layered structure, the first semiconductor thin film layer is preferably grown at a lower temperature than other layers.    The formula AlxInyGazN (x, y, z used as a homo-epitaxial substrate and a light-emitting multilayer structure thin film layer by using HVPE or MOCVD on the upper layer of the epitaxial substrate and light-emitting multilayer structure growth invented / manufactured by the present invention. : Electroplating after laminating / growing a group III nitride-based single crystal semiconductor thin film layer represented by an integer) in a single layer or multilayer structure in a high temperature of 700 degrees or higher and hydrogen (H 2) and ammonia (NH 3) gas atmosphere. Electrical and chemical methods using a variety of known wafer bonding process techniques, including various electrical / chemical methods, fusion bonding using molten metal or alloy, physical / chemical deposition (CVD or PVD), and the like. It forms a known supporting substrate having thermally good conductivity.    The formula AlxInyGazN (x, y, z used as a homo-epitaxial substrate and a light-emitting multilayer structure thin film layer by using HVPE or MOCVD on the upper layer of the epitaxial substrate and light-emitting multilayer structure growth invented / manufactured by the present invention. : Group III-nitride-based single crystal semiconductor thin film layer represented by (integer) is laminated / grown in a single layer or multilayer structure in a high temperature of 700 degrees or higher and hydrogen (H2) and ammonia (NH3) gas atmosphere, and electroplating is performed. Electrical and thermal methods using a variety of known wafer bonding process techniques, including various electro / chemical methods, fusion bonding using molten metals or alloys, and physical / chemical vapor deposition (CVD or PVD). The materials refilled in the trench space through etching techniques after adhering a known supporting substrate having good conductivity to The bonding material layer and the relaxed substrates are completely removed / separated.     The formula AlxInyGazN (x, y, z used as a homo-epitaxial substrate and a light-emitting multilayer structure thin film layer by using HVPE or MOCVD on the upper layer of the epitaxial substrate and light-emitting multilayer structure growth invented / manufactured by the present invention. : Group III-nitride-based single crystal semiconductor thin film layer represented by (integer) is laminated / grown in a single layer or multilayer structure in a high temperature of 700 degrees or higher and hydrogen (H2) and ammonia (NH3) gas atmosphere, and electroplating is performed. Electrical and thermal methods using a variety of known wafer bonding process techniques, including various electro / chemical methods, fusion bonding using molten metals or alloys, and physical / chemical vapor deposition (CVD or PVD). Bonding well-known supporting substrates with excellent conductivity and refilling the trench spaces through etching techniques; After completely removing / separating the material layer and the relaxed substrate, the final high quality homoepitaxial substrate and the light emitting multilayer are formed on top of a supporting substrate having excellent electrical and thermal conductivity through a surface planarization process of etching the semiconductor thin film layer. Create a structure.     The claims of the present invention may include, in addition to those mentioned in the above claims, partial process techniques not mentioned in detail with those mentioned in the drawings of the present invention, in particular using group III nitride-based semiconductors. The light emitting diode fabrication process includes / applies even the invention filed by the present inventor.

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