JP2010056458A - Method of manufacturing light emitting element - Google Patents

Method of manufacturing light emitting element Download PDF

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JP2010056458A
JP2010056458A JP2008222508A JP2008222508A JP2010056458A JP 2010056458 A JP2010056458 A JP 2010056458A JP 2008222508 A JP2008222508 A JP 2008222508A JP 2008222508 A JP2008222508 A JP 2008222508A JP 2010056458 A JP2010056458 A JP 2010056458A
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bonding
growth
substrate
metal
layer
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JP2008222508A
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Katsuaki Masaki
Takanori Yasuda
隆則 安田
克明 正木
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Kyocera Corp
京セラ株式会社
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting element in which adverse effect of environmental temperature variation in a fabricating process is small. <P>SOLUTION: The method of manufacturing the light emitting element includes the processes of: (1) forming a plurality of first laminates; (2) forming a plurality of second laminates by laminating a metal body 5 and a second bonding portion 6 in order; (3) mounting the second laminates on the first laminates by heating; (4) removing a substrate 1 for growth; (5) removing a support substrate 4 to form a first electrode 5a; and (6) forming a second electrode 7 on an optical semiconductor element 2. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting device.

  In recent years, light emitting elements composed of optical semiconductors have been developed and used for lighting devices and the like. Examples of such a light emitting element include a group III-V group compound semiconductor such as a blue light emitting element and an ultraviolet light emitting element.

Along with the development of light-emitting elements, various methods for manufacturing light-emitting elements have been developed. For example, after a light-emitting element is grown on a growth substrate, the light-emitting element is peeled off from the growth substrate to produce a light-emitting element. A manufacturing method is disclosed (see Patent Document 1).
JP 2001-244503 A

  However, since Patent Document 1 includes a step of forming an optical semiconductor layer on a wafer-size growth substrate such as sapphire and bonding a wafer-size conductive substrate such as metal by heating, it is used for growth when the temperature decreases. Due to the difference in thermal expansion coefficient between the substrate and the conductive substrate, distortion occurs between the growth substrate and the conductive substrate. For this reason, the obtained light emitting element tends to cause poor bonding and semiconductor defects.

  An object of the present invention is to provide a method for manufacturing a light-emitting element having a small adverse effect on a temperature change in a manufacturing process.

The present invention includes (1) a step of sequentially laminating an optical semiconductor layer and a first bonding portion on a growth substrate to form a plurality of first laminated bodies, and (2) the growth of the support substrate for the growth A step of sequentially stacking a metal body and a second bonding portion at a position facing the first bonding portion when facing the substrate to form a plurality of second stacked bodies; and (3) heating. Bonding the first bonding portion and the second bonding portion to mount the second stacked body on the first stacked body, and (4) removing the growth substrate. (5) removing the support substrate to expose the metal body to form a first electrode; (6) forming a conductive layer on the optical semiconductor element to form a second electrode; ,
The present invention relates to a method for manufacturing a light emitting device comprising:

In the step (1), (1-1) a growth suppression mask pattern is formed on the growth substrate by a material made of a material that is inactive with respect to the epitaxial growth of the first stacked body and separated from each other. A step of forming an exposed portion on the plurality of grown substrates, and (1-2) a step of forming a plurality of the first stacked bodies by epitaxial growth on the exposed portion on the growth substrate,
(1-3) It is preferable to include a step of removing the growth suppression mask pattern.

  When the growth substrate and the first laminate are different materials, it is preferable that the growth substrate is removed by laser lift-off in the step (4).

  It is preferable that the metal body is Cu and the growth substrate is sapphire.

  In the step (2), the support substrate and the metal body are bonded via a third bonding portion having a melting point lower than that of the first bonding portion and the second bonding portion. In the step (5), the support substrate and the metal body are heated to a temperature lower than the melting points of the first bonding portion and the second bonding portion and higher than the melting point of the third bonding portion. It is preferable to remove the support substrate by doing so.

  In the method for manufacturing a light emitting device of the present invention, a metal substrate and a second bonding portion are sequentially stacked on a support substrate at a position facing the first bonding portion when facing the growth substrate. A step of forming a plurality of the two laminates. By using the metal body of the light emitting element size instead of the wafer size in the above process, the connection area between the metal body and the optical semiconductor layer is reduced, and due to the difference in coefficient of thermal expansion between the metal body and the growth substrate. Since the generated strain can be reduced, a metal material having a high thermal conductivity can be used without worrying about the difference in thermal expansion coefficient. In addition, since the distortion between the metal body and the growth substrate that occurs when the temperature decreases after heating can be suppressed, generation of cracks in the semiconductor layer can be suppressed, and a light-emitting element can be manufactured with high yield.

  In the method for manufacturing a light emitting device of the present invention, the step (1) includes (1-1) forming a growth suppression mask pattern on the growth substrate with a material made of a material that is inactive with respect to the epitaxial growth of the optical semiconductor layer. Forming a plurality of exposed portions on the growth substrate separated from each other; and (1-2) forming a plurality of the stacked bodies on the plurality of exposed portions on the growth substrate by epitaxial growth. It is preferable to include a step and (1-3) a step of removing the growth suppression mask pattern. Thereby, a some 1st laminated body can be formed collectively.

  In the method for manufacturing a light-emitting element of the present invention, when the growth substrate and the first laminate are different materials, it is preferable that the growth substrate is removed by laser lift-off in the step (4). This makes it possible to easily remove the growth substrate. Further, the elements can be separated without the need for dicing. There is no need to dice a sapphire substrate that is hard and difficult to dice, and the element area that is wasted compared to dicing is greatly reduced.

  In the method for manufacturing a light-emitting element according to the present invention, the metal body is preferably Cu and the growth substrate is preferably sapphire, Cu has high thermal conductivity, and heat generated by the light-emitting element is efficiently radiated to the outside. it can. In addition, since the metal body has a light-emitting element size, even when Cu and sapphire have a large difference in thermal expansion coefficient between the metal body and the growth substrate, the occurrence of cracks in the semiconductor layer can be reduced when the temperature decreases.

  In the step (2), the support substrate and the metal body are bonded via a third bonding portion having a melting point lower than that of the first bonding portion and the second bonding portion. In the step (5), the support substrate and the metal body are heated to a temperature lower than the melting points of the first bonding portion and the second bonding portion and higher than the melting point of the third bonding portion. It is preferable to remove the support substrate by doing so. Thereby, it is possible to remove only the support substrate in a state where the influence on the first and second bonding portions is small while the first bonding portion and the second bonding portion are kept in close contact with each other.

  Hereinafter, a method for manufacturing a light emitting device of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a cross-sectional view illustrating a method for manufacturing a light emitting device of the present invention.

  In FIG. 1, 1 is a growth substrate, 2 is an optical semiconductor layer, 2a is a buffer layer, 2b is a first conductivity type (n-type) semiconductor layer, 2c is a light emitting layer, and 2d is a second conductivity type (p-type). Semiconductor layer, 2e is a template layer, 3 is a first joint, 4 is a support substrate, 5 is a metal body (first electrode), 6 is a second joint, and 7 is a conductive layer (second electrode). ), 8 denotes a light emitting element, and 10 denotes a growth suppression mask pattern.

  The light emitting device manufacturing method of the present invention includes (1) a step of sequentially stacking an optical semiconductor layer and a first bonding portion on a growth substrate to form a plurality of first stacked bodies, and (2) support. Forming a plurality of second laminated bodies by sequentially laminating a metal body and a second joint at a position of the substrate facing the first joint when facing the growth substrate; (3) a step of bonding the first bonding portion and the second bonding portion by heating to mount the second stacked body on the first stacked body; and (4) the growth purpose. A step of removing the substrate; (5) a step of removing the support substrate to expose the metal body to form a first electrode; and (6) forming a conductive layer on the optical semiconductor element to form a second layer. And a step of forming an electrode.

  Each process will be described below.

(Process 1)
In step 1, as shown in FIG. 1A, an optical semiconductor layer 2 and a first bonding portion 3 are sequentially stacked on a growth substrate 1 to form a plurality of first stacked bodies.

The growth substrate 1 may be any substrate on which the optical semiconductor layer 2 can be grown. Specifically, examples of the substrate 1 include sapphire (Al 2 O 3 ), gallium nitride (GaN), aluminum nitride (AlN), zinc oxide (ZnO), and silicon carbide (SiC). The thickness of the substrate 20a is about 100 μm to 1000 μm.

Examples of the optical semiconductor layer 2 include a group III nitride semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, and the like. Here, the group III nitride semiconductor means a semiconductor composed of a nitride of a group III (group 13) element in the periodic table. The group III nitride semiconductor can be represented by the chemical formula Al x Ga y In 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). Examples of the group III nitride semiconductor include gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and indium nitride (InN).

  In the case of FIG. 1A, the optical semiconductor layer 2 includes a buffer layer 2a, a first conductivity type semiconductor layer 2b, a light emitting layer 2c, and a second conductivity type semiconductor layer 2d.

  The buffer layer 2 a is preferably formed in order to relieve stress between the growth substrate 1 and the optical semiconductor layer 2. The buffer layer 2a is made of a material such as gallium nitride or aluminum nitride, for example. The thickness of the buffer layer 2a is about 0.01 to 0.2 μm.

  Examples of the first conductivity type semiconductor layer 2b include an n-type semiconductor layer. For example, in order to make the group III nitride semiconductor layer n-type, Si or the like, which is a group IV element in the periodic table, may be mixed into the nitride semiconductor layer as a dopant. The thickness of the first conductivity type semiconductor layer 2b is about 2 to 3 μm.

  Examples of the second conductivity type semiconductor layer 2d include a p-type nitride semiconductor. For example, in order to make the group III nitride semiconductor layer p-type, Mg or the like, which is a group II element in the periodic table, may be mixed into the nitride semiconductor layer as a dopant. The thickness of the second conductivity type semiconductor layer 2d is about 200 to 500 nm.

The light emitting layer 2c is provided between the first conductive type semiconductor layer 2b and the second conductive type semiconductor layer 2d. The light emitting layer 2c has a multilayer quantum well structure (MQW) in which a quantum well structure composed of a barrier layer having a wide forbidden band and a well layer having a narrow forbidden band is regularly stacked a plurality of times (for example, about 3 times). Also good. Note that examples of the barrier layer include an In 0.01 Ga 0.99 N layer. Examples of the well layer include an In 0.11 Ga 0.89 N layer. The thickness of the barrier layer is about 5 to 15 nm, and the thickness of the well layer is about 2 to 10 nm. The thickness of the light emitting layer 2c is about 25 to 150 nm.

  As a growth method of the optical semiconductor layer 2 on the growth substrate 1, a molecular beam epitaxy (MBE) method, a metal organic epitaxy (MOVPE), a hydride vapor phase epitaxy (HVPE; Vapor Phase Epitaxy), pulsed laser deposition (PLD) method, or the like is used.

  In step 1, a first bonding portion 3 is formed on the optical semiconductor layer 2. The 1st junction part 3 is provided by methods, such as a vacuum evaporation method and sputtering method, and thickness is about 0.1-10 micrometers. The first joint 3 is made of a material such as an Au—Sn alloy or a Pb—Sn alloy.

  In step 1, as a method of forming a plurality of first stacked bodies, a method of dividing the produced first stacked body, a mask is formed, and the region of the growth substrate 1 is divided first, and then the first stacked body is divided. Examples include a method of growing a laminate. Examples of the method for dividing the manufactured first laminated body include dicing, a method of performing dry etching after forming an etching mask in a region other than the region to be divided, and the like.

  Further, a specific example of a method of dividing the region of the growth substrate 1 first and then growing the first stacked body is shown in FIG. 2 below.

  First, a growth suppression mask pattern is formed on the growth substrate 1 (FIG. 2A). At this time, after the template layer 2e is grown on the buffer layer 2a, the buffer layer 2a and the template layer 2e are removed by etching or the like only in the region where the mask is to be formed. This is because the growth substrate is separated from the template layer, and each semiconductor layer remains connected to the template layer unless the template layer is divided. Here, the template layer 2e is used for selectively growing the semiconductor layer 2b so as not to grow on the growth suppression mask 10. The template layer 2e is a material on which the first conductivity type semiconductor layer 2b is epitaxially grown without a buffer layer, and has a thickness of about 1 to 5 μm.

The growth suppression mask pattern 10 is formed of a material made of a material that is inactive with respect to the epitaxial growth of the group III nitride semiconductor. Here, specific examples of materials used for the growth suppression mask pattern 10 include SiO 2 and polycrystalline silicon. These are inert to the epitaxial growth of group III nitride semiconductors.

  Specifically, the growth suppressing mask pattern 10 is formed by depositing a mask material on one surface by vapor deposition, CVD or the like, and then performing photolithography and etching.

  After forming the growth suppression mask pattern 10, the first conductivity type semiconductor layer 2b, the light emitting layer 2c, and the second conductivity type semiconductor layer 2d separated by the growth suppression mask pattern 10 on the template layer 2e, Are formed by epitaxial growth (see FIG. 2B).

Then, after forming them, the growth suppression mask pattern 10 is removed (FIG. 2C). Specifically, if the mask material is SiO 2 in the case of hydrofluoric acid, polycrystalline silicon removing the growth suppression mask pattern 10 by wet etching using a mixed acid with nitric acid and hydrofluoric acid.

(Process 2)
In step 2, as shown in FIG. 1B, the metal body 5 and the second bonding portion 6 are located at a position where the supporting substrate 4 faces the first bonding portion 3 when facing the growth substrate 1. Are sequentially stacked to form a plurality of second stacked bodies.

  The support substrate 4 is made of a material such as a ceramic such as alumina or aluminum nitride, a metal such as glass or stainless steel, or a glass epoxy substrate. The material of the support substrate 4 preferably has a thermal expansion coefficient close to that of the growth substrate 1. The thickness of the support substrate 4 is about 0.5 to 5 mm.

  A plurality of metal bodies 5 are formed on the support substrate 4 at positions facing the first joint 3 when facing the growth substrate 1. The area of the metal body 5 when viewed in plan is equal to or larger than the area when the optical semiconductor layer 2 is viewed in plan. Thus, in the manufacturing method of the present invention, the metal body 5 is used in a chip size (about 0.2 to 5 mm square).

  Examples of a method for producing the metal body 5 include a method of providing a wafer-size metal body on a support substrate, bonding them, and then dividing them into chips by dicing.

  Examples of the metal body 5 include a Cu—W alloy. In the manufacturing method of the present invention, it is possible to use the metal body 5 composed of Cu alone. Conventionally, for example, when a sapphire substrate is used as the growth substrate 1, a Cu—W alloy having a thermal expansion coefficient close to that of the sapphire substrate has been used as the metal body 5. However, since the Cu—W alloy has insufficient thermal conductivity, it has been desired to use the metal body 5 made of a simple substance of Cu that is more excellent in thermal conductivity.

  In the present invention, the connection area between the metal body and the optical semiconductor layer is reduced by using the chip-sized metal body 5. Thereby, compared to the case of a wafer-sized metal body, distortion caused by the difference in coefficient of thermal expansion between the metal body and the growth substrate can be reduced. Can be used.

  The second joint 6 is a part for joining with the first joint 3. The 2nd junction part 6 is provided by methods, such as a plating method, sputtering method, and a vacuum evaporation method, and thickness is about 1-100 micrometers. Moreover, the 2nd junction part 6 is comprised with materials, such as an An-Sn alloy and a Pb-Sn alloy.

  In step 2, it is preferable that a third joint is provided between the support substrate 4 and the metal body 5. Thereby, the metal body 5 is sufficiently held on the support substrate 4. The support substrate 4 and the metal body 5 are performed by heating to 150 to 400 ° C.

  The melting point of the third bonding part is preferably lower than the melting points of the first bonding part 3 and the second bonding part 6. Examples of such a third joint include indium, tin, lead and alloys thereof, UV-curing heat-peeling adhesive, and the like.

  Since the melting point of the third bonding portion is lower than the melting points of the first bonding portion 3 and the second bonding portion 6, the first bonding portion 3 and the second bonding portion 6 are connected in step 3 to be described later. After bonding, even if the temperature decreases and the bonded portions solidify, the third bonded portion has a long period of liquid. Therefore, even if there is a difference in the thermal expansion coefficient between the metal body 5 and the support body 4, the third joint portion acts as a buffer, and the influence of the thermal expansion coefficient can be reduced.

(Process 3)
Step 3 is a step of mounting the second stacked body on the first stacked body by bonding the first bonded portion 3 and the second bonded portion 6 by heating (see FIG. 1C). ). The 1st junction part 3 and the 2nd junction part 6 are performed by heating at 150-400 degreeC.

(Process 4)
In step 4, the growth substrate 1 is removed. Examples of the removal method include laser lift-off (when the growth substrate 1 and the optical semiconductor layer 2 are made of different materials), polishing of the substrate, and the like. Among these, the growth substrate 1 can be easily removed by laser irradiation, and therefore, laser lift-off is preferable as the removal method. In Step 3, when heated, laser lift-off may be performed in the cycle. In this case, since the support substrate 4 is cooled in a state where the growth substrate 1 is removed first, accumulation of thermal stress can be prevented.

(Process 5)
In step 5, the support substrate is removed to expose the metal body 5, thereby forming a first electrode. Examples of the removal method include a method such as a method of melting the third bonding portion by heating and vacuum-sucking the optical semiconductor layer 2. Further, when an adhesive that is peeled off by heat is used for the third bonding portion, the adhesive strength is reduced by the heat treatment in step 3, so that the optical semiconductor can be obtained by simply attaching an adhesive sheet to the optical semiconductor layer 2. Layer 2 is easily removed from support substrate 4.

  In particular, a third joint is provided between the metal body 5 and the support substrate 4, and the melting point of the third joint is lower than the melting points of the first joint 3 and the second joint 6. In this case, in step 5, the first and second joints are heated to a temperature lower than the melting point of the first joint 3 and the second joint 6 and higher than the melting point of the third joint. Only the support substrate can be removed in a state where the influence on the surface is small.

(Step 6)
In step 6, a conductive layer 7 is formed on the optical semiconductor element 2 to form a second electrode.

  The conductive layer 7 includes a conductive portion 7a for diffusing a current over the entire surface of the element, and a pad electrode 7b that makes electrical contact with the outside. As the conductive portion 7a, a transparent conductive film material such as ITO or ZnO or a metal material such as Ti, Al, or Rh is used.

  The conductive layer 7a is produced by a method such as a vacuum evaporation method or a sputtering method. The thickness of the conductive layer 7a is about 0.1 to 5 μm. The conductive layer 7a is not necessarily required, and may be patterned, for example, in a lattice pattern in order to obtain the effect of current diffusion while suppressing light absorption by the conductive layer 7a.

  Next, a pad electrode 7b for wire bonding is formed. The pad electrode 7b is made of, for example, titanium or a layer in which a gold layer is stacked with titanium as a base layer so that the pad electrode 7b can be bonded to the first conductive type semiconductor layer 2b or the conductive portion 7a.

  The pad electrode 7b is formed by a method such as a vacuum evaporation method or a sputtering method. The thickness of the pad electrode 7b is about 0.5 to 5 μm.

  As described above, the light-emitting element 8 can be manufactured through the steps 1 to 6.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

(A)-(e) is sectional drawing which shows one Embodiment of the manufacturing method of the light emitting element of this invention. (A)-(c) is sectional drawing which shows one of the process 1 of the manufacturing method of the light emitting element of this invention.

Explanation of symbols

1: growth substrate 2: optical semiconductor layer 2a: buffer layer 2b: first conductivity type (n-type) semiconductor layer 2c: light emitting layer 2d: second conductivity type (p-type) semiconductor layer 2e: template layer 3: First bonding part 4: Support substrate 5: Metal body (first electrode)
6: Second joint 7: Conductive layer (second electrode)
7a: Conductive portion 7b: Pad electrode 8: Light emitting element 10: Growth suppression mask pattern

Claims (5)

  1. (1) forming a plurality of first stacked bodies by sequentially stacking an optical semiconductor layer and a first bonding portion on a growth substrate;
    (2) A plurality of second laminated bodies are formed by sequentially laminating a metal body and a second joint portion at a position facing the first joint portion when the support substrate is opposed to the growth substrate. And a process of
    (3) The step of bonding the first bonding portion and the second bonding portion by heating to mount the second stacked body on the first stacked body;
    (4) removing the growth substrate;
    (5) removing the support substrate to expose the metal body to form a first electrode;
    (6) forming a conductive layer on the optical semiconductor element to form a second electrode;
    A method for manufacturing a light emitting device comprising:
  2. The step (1)
    (1-1) A plurality of growth-use patterns separated from each other by forming a growth-inhibiting mask pattern on the growth-use substrate using a material made of a material that is inactive with respect to the epitaxial growth of the first stacked body. Forming an exposed portion on the substrate;
    (1-2) forming a plurality of the first stacked bodies by epitaxial growth on the exposed portion on the growth substrate;
    (1-3) removing the growth suppression mask pattern;
    The manufacturing method of the light emitting element of Claim 1 containing this.
  3.   3. The method for manufacturing a light-emitting element according to claim 1, wherein when the growth substrate and the first stacked body are different materials, the growth substrate is removed by laser lift-off in the step (4).
  4.   The method for manufacturing a light-emitting element according to claim 1, wherein the metal body is Cu, and the growth substrate is sapphire.
  5. In the step (2), the support substrate and the metal body are bonded via a third bonding portion having a melting point lower than that of the first bonding portion and the second bonding portion. ,
    In the step (5), the support substrate and the metal body are heated to a temperature lower than the melting points of the first bonding portion and the second bonding portion and higher than the melting point of the third bonding portion. The method for manufacturing a light-emitting element according to claim 1, wherein the support substrate is removed.
JP2008222508A 2008-08-29 2008-08-29 Method of manufacturing light emitting element Pending JP2010056458A (en)

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