SG10201400660UA - Semiconductor devices and methods for fabricating the same - Google Patents
Semiconductor devices and methods for fabricating the sameInfo
- Publication number
- SG10201400660UA SG10201400660UA SG10201400660UA SG10201400660UA SG10201400660UA SG 10201400660U A SG10201400660U A SG 10201400660UA SG 10201400660U A SG10201400660U A SG 10201400660UA SG 10201400660U A SG10201400660U A SG 10201400660UA SG 10201400660U A SG10201400660U A SG 10201400660UA
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- methods
- same
- semiconductor devices
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/971,691 US20120153350A1 (en) | 2010-12-17 | 2010-12-17 | Semiconductor devices and methods for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201400660UA true SG10201400660UA (en) | 2014-05-29 |
Family
ID=46233239
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201400660UA SG10201400660UA (en) | 2010-12-17 | 2011-08-26 | Semiconductor devices and methods for fabricating the same |
SG2011062130A SG182039A1 (en) | 2010-12-17 | 2011-08-26 | Semiconductor devices and methods for fabricating the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011062130A SG182039A1 (en) | 2010-12-17 | 2011-08-26 | Semiconductor devices and methods for fabricating the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120153350A1 (en) |
KR (1) | KR101339998B1 (en) |
CN (1) | CN102543752A (en) |
DE (1) | DE102011088714B4 (en) |
SG (2) | SG10201400660UA (en) |
TW (1) | TW201227831A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9698044B2 (en) | 2011-12-01 | 2017-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Localized carrier lifetime reduction |
US20140264484A1 (en) * | 2013-03-15 | 2014-09-18 | Globalfoundries Singapore Pte. Ltd. | Fluorine-doped channel silicon-germanium layer |
US9601619B2 (en) | 2013-07-16 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with non-uniform P-type impurity profile |
KR102145881B1 (en) | 2013-12-23 | 2020-08-19 | 인텔 코포레이션 | Tensile source drain iii-v transistors for mobility improved n-mos |
KR102446671B1 (en) * | 2016-01-08 | 2022-09-23 | 삼성전자주식회사 | Semiconductor device having an asymmetric active region and Method for forming the same |
US10304938B2 (en) * | 2016-09-01 | 2019-05-28 | International Business Machines Corporation | Maskless method to reduce source-drain contact resistance in CMOS devices |
US10559593B1 (en) * | 2018-08-13 | 2020-02-11 | Globalfoundries Inc. | Field-effect transistors with a grown silicon-germanium channel |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258695B1 (en) * | 1999-02-04 | 2001-07-10 | International Business Machines Corporation | Dislocation suppression by carbon incorporation |
US6492216B1 (en) * | 2002-02-07 | 2002-12-10 | Taiwan Semiconductor Manufacturing Company | Method of forming a transistor with a strained channel |
US6921913B2 (en) * | 2003-03-04 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel transistor structure with lattice-mismatched zone |
US7119417B2 (en) * | 2003-09-25 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and fabrication method thereof |
US7211458B2 (en) * | 2005-08-08 | 2007-05-01 | North Carolina State University | Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
DE102005041225B3 (en) * | 2005-08-31 | 2007-04-26 | Advanced Micro Devices, Inc., Sunnyvale | Method for producing recessed, deformed drain / source regions in NMOS and PMOS transistors |
DE102005052055B3 (en) * | 2005-10-31 | 2007-04-26 | Advanced Micro Devices, Inc., Sunnyvale | Transistor and semiconductor components and production process for thin film silicon on insulator transistor has embedded deformed layer |
US7279758B1 (en) * | 2006-05-24 | 2007-10-09 | International Business Machines Corporation | N-channel MOSFETs comprising dual stressors, and methods for forming the same |
US7473594B2 (en) * | 2006-07-25 | 2009-01-06 | International Business Machines Corporation | Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon |
US7525161B2 (en) * | 2007-01-31 | 2009-04-28 | International Business Machines Corporation | Strained MOS devices using source/drain epitaxy |
US7875511B2 (en) * | 2007-03-13 | 2011-01-25 | International Business Machines Corporation | CMOS structure including differential channel stressing layer compositions |
CN101312208B (en) * | 2007-05-23 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | NMOS transistor and method for forming same |
US7736957B2 (en) * | 2007-05-31 | 2010-06-15 | Freescale Semiconductor, Inc. | Method of making a semiconductor device with embedded stressor |
US7928474B2 (en) * | 2007-08-15 | 2011-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd., | Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regions |
CN101593701B (en) * | 2008-05-30 | 2011-05-04 | 中芯国际集成电路制造(北京)有限公司 | Stress NMOS device and manufacturing method of stress CMOS |
JP2010171337A (en) * | 2009-01-26 | 2010-08-05 | Toshiba Corp | Field effect transistor |
US8367485B2 (en) * | 2009-09-01 | 2013-02-05 | International Business Machines Corporation | Embedded silicon germanium n-type filed effect transistor for reduced floating body effect |
JP5601848B2 (en) * | 2010-02-09 | 2014-10-08 | 三菱電機株式会社 | Method for manufacturing SiC semiconductor device |
-
2010
- 2010-12-17 US US12/971,691 patent/US20120153350A1/en not_active Abandoned
-
2011
- 2011-08-26 SG SG10201400660UA patent/SG10201400660UA/en unknown
- 2011-08-26 SG SG2011062130A patent/SG182039A1/en unknown
- 2011-08-30 TW TW100131050A patent/TW201227831A/en unknown
- 2011-11-10 KR KR1020110117180A patent/KR101339998B1/en not_active IP Right Cessation
- 2011-12-14 CN CN2011104184299A patent/CN102543752A/en active Pending
- 2011-12-15 DE DE102011088714A patent/DE102011088714B4/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102011088714B4 (en) | 2013-05-29 |
CN102543752A (en) | 2012-07-04 |
US20120153350A1 (en) | 2012-06-21 |
DE102011088714A1 (en) | 2012-06-21 |
SG182039A1 (en) | 2012-07-30 |
KR20120068692A (en) | 2012-06-27 |
TW201227831A (en) | 2012-07-01 |
KR101339998B1 (en) | 2013-12-11 |
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