EP2486596A4 - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

Info

Publication number
EP2486596A4
EP2486596A4 EP10821867.8A EP10821867A EP2486596A4 EP 2486596 A4 EP2486596 A4 EP 2486596A4 EP 10821867 A EP10821867 A EP 10821867A EP 2486596 A4 EP2486596 A4 EP 2486596A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10821867.8A
Other languages
German (de)
French (fr)
Other versions
EP2486596A1 (en
Inventor
Shunpei Yamazaki
Hideki Uochi
Yasuo Nakamura
Junpei Sugao
Jun Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP2486596A1 publication Critical patent/EP2486596A1/en
Publication of EP2486596A4 publication Critical patent/EP2486596A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
EP10821867.8A 2009-10-09 2010-09-15 Semiconductor device and method for manufacturing the same Withdrawn EP2486596A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009235750 2009-10-09
PCT/JP2010/066469 WO2011043196A1 (en) 2009-10-09 2010-09-15 Semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
EP2486596A1 EP2486596A1 (en) 2012-08-15
EP2486596A4 true EP2486596A4 (en) 2013-08-28

Family

ID=43854153

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10821867.8A Withdrawn EP2486596A4 (en) 2009-10-09 2010-09-15 Semiconductor device and method for manufacturing the same

Country Status (7)

Country Link
US (1) US8253144B2 (en)
EP (1) EP2486596A4 (en)
JP (2) JP5665467B2 (en)
KR (1) KR101771268B1 (en)
CN (1) CN102576736B (en)
TW (1) TWI535027B (en)
WO (1) WO2011043196A1 (en)

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JP5730593B2 (en) * 2011-01-26 2015-06-10 株式会社ジャパンディスプレイ Touch screen or display device with touch screen and manufacturing method thereof.
JP2013093565A (en) * 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2013115097A (en) * 2011-11-25 2013-06-10 Japan Display West Co Ltd Semiconductor device, manufacturing method thereof, display device and electronic apparatus
KR101975263B1 (en) 2012-02-07 2019-05-08 삼성디스플레이 주식회사 Thin film transistor display panel and method of manufacturing the same
JP5888501B2 (en) * 2012-02-16 2016-03-22 三菱マテリアル株式会社 Thin film wiring formation method
JP2014045175A (en) * 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd Semiconductor device
CN102881701B (en) * 2012-09-19 2015-01-07 北京京东方光电科技有限公司 TFT (thin film transistor) flat X-ray sensor and method for manufacturing same
JP2014072464A (en) 2012-09-29 2014-04-21 Murata Mfg Co Ltd Power storage device
JP6400961B2 (en) * 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 Display device
US9691797B2 (en) * 2014-04-08 2017-06-27 Sharp Kabushiki Kaisha Display device
CN105320314B (en) * 2014-06-04 2019-07-16 宸盛光电有限公司 Touch control display apparatus
KR102205856B1 (en) * 2014-06-11 2021-01-21 삼성디스플레이 주식회사 Organic light emitting diode display device including sensors
CN104465786B (en) * 2014-12-30 2018-09-04 京东方科技集团股份有限公司 Thin film transistor (TFT) and its manufacturing method, display base plate and display device
KR102540372B1 (en) * 2015-05-28 2023-06-05 엘지디스플레이 주식회사 Organic light emitting display device and method of manufacturing the same
US10371129B2 (en) * 2016-02-26 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and sensor system
CN105870132A (en) * 2016-04-18 2016-08-17 武汉华星光电技术有限公司 TFT (thin film transistor) array substrate and manufacturing method therefor
TWI625847B (en) * 2016-09-09 2018-06-01 友達光電股份有限公司 Pixel structure and related fabrication method
KR101930439B1 (en) * 2017-12-18 2018-12-19 삼성디스플레이 주식회사 Pixel
JP6808689B2 (en) * 2018-07-23 2021-01-06 株式会社Ｊｏｌｅｄ Thin film transistor substrate and light emitting device
JP7256622B2 (en) * 2018-09-26 2023-04-12 株式会社ジャパンディスプレイ Display device
JP7145032B2 (en) * 2018-10-19 2022-09-30 キヤノン株式会社 Displays and electronics
CN109300405A (en) * 2018-11-30 2019-02-01 云谷（固安）科技有限公司 A kind of display panel and device
KR102051102B1 (en) * 2018-12-12 2019-12-03 삼성디스플레이 주식회사 Pixel
TWI683152B (en) * 2018-12-28 2020-01-21 友達光電股份有限公司 Pixel structure
KR20210026529A (en) * 2019-08-30 2021-03-10 에스케이하이닉스 주식회사 Capacitor and method for manufacturing the same
KR20220016373A (en) * 2020-07-30 2022-02-09 삼성디스플레이 주식회사 Display apparatus and manufacturing the same
TWI741789B (en) * 2020-09-16 2021-10-01 凌巨科技股份有限公司 Display panel and manumacturing method thereof

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US6255706B1 (en) * 1999-01-13 2001-07-03 Fujitsu Limited Thin film transistor and method of manufacturing same
US20020175376A1 (en) * 1998-12-18 2002-11-28 Hisashi Ohtani Semiconductor device and manufacturing method thereof
EP1788633A2 (en) * 2005-11-17 2007-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same

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JP3896624B2 (en) * 1997-02-14 2007-03-22 ソニー株式会社 Thin film semiconductor device and display device using the same
JP4243401B2 (en) * 1999-12-21 2009-03-25 エルジー ディスプレイ カンパニー リミテッド Copper wiring board, manufacturing method thereof, and liquid crystal display device
JP2002111008A (en) * 2000-10-04 2002-04-12 Canon Inc Thin film transistor array
US6933568B2 (en) * 2002-05-17 2005-08-23 Samsung Electronics Co., Ltd. Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
JP2004076079A (en) * 2002-08-14 2004-03-11 Tosoh Corp Thin film for wiring and sputtering target
KR100866976B1 (en) 2002-09-03 2008-11-05 엘지디스플레이 주식회사 Liquid Crystal Display and mathod for fabricating of the same
KR100883769B1 (en) 2002-11-08 2009-02-18 엘지디스플레이 주식회사 Method for fabricating of an array substrate for LCD
KR100939560B1 (en) * 2003-06-30 2010-01-29 엘지디스플레이 주식회사 Liquid Crystal Display and method for fabricating of the same
KR100585873B1 (en) * 2003-11-03 2006-06-07 엘지.필립스 엘시디 주식회사 Polycrystalline liquid crystal display device and fabfication method thereof
KR20060090523A (en) * 2005-02-07 2006-08-11 삼성전자주식회사 Wiring for display device and thin film transistor array panel comprising the wiring
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP2007142022A (en) * 2005-11-16 2007-06-07 Seiko Epson Corp Metal wiring and method of manufacturing same, thin film transistor, electro-optical device and electronic apparatus
JP2007165860A (en) * 2005-11-17 2007-06-28 Semiconductor Energy Lab Co Ltd Display device and method of manufacturing same
JP2008112989A (en) * 2006-10-05 2008-05-15 Ulvac Japan Ltd Target, film forming method, thin film transistor, panel with thin film transistor, and manufacturing method for thin film transistor
EP2096666A4 (en) * 2006-12-28 2015-11-18 Ulvac Inc Method for forming wiring film, transistor, and electronic device
JP5286691B2 (en) * 2007-05-14 2013-09-11 三菱電機株式会社 Photo sensor
JP2009004518A (en) * 2007-06-20 2009-01-08 Kobe Steel Ltd Thin film transistor substrate and display device
JP2009105390A (en) 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing thereof
JP5377940B2 (en) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 Semiconductor device
JP2008170987A (en) * 2007-12-21 2008-07-24 Mitsubishi Electric Corp In-plane switching type liquid crystal display device
JP2009170768A (en) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp Photosensor array substrate, and photosensor
JP4626659B2 (en) * 2008-03-13 2011-02-09 ソニー株式会社 Display device

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20020175376A1 (en) * 1998-12-18 2002-11-28 Hisashi Ohtani Semiconductor device and manufacturing method thereof
US6255706B1 (en) * 1999-01-13 2001-07-03 Fujitsu Limited Thin film transistor and method of manufacturing same
EP1788633A2 (en) * 2005-11-17 2007-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011043196A1 *

Also Published As

Publication number Publication date
TW201131778A (en) 2011-09-16
JP5871410B2 (en) 2016-03-01
WO2011043196A1 (en) 2011-04-14
US20110084337A1 (en) 2011-04-14
EP2486596A1 (en) 2012-08-15
JP5665467B2 (en) 2015-02-04
JP2011100988A (en) 2011-05-19
US8253144B2 (en) 2012-08-28
CN102576736B (en) 2015-05-13
KR20120093851A (en) 2012-08-23
CN102576736A (en) 2012-07-11
TWI535027B (en) 2016-05-21
JP2015065471A (en) 2015-04-09
KR101771268B1 (en) 2017-08-24

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