EP2457256A4 - Semiconductor device and method for manufacturing semiconductor device - Google Patents
Semiconductor device and method for manufacturing semiconductor deviceInfo
- Publication number
- EP2457256A4 EP2457256A4 EP10802163.5A EP10802163A EP2457256A4 EP 2457256 A4 EP2457256 A4 EP 2457256A4 EP 10802163 A EP10802163 A EP 10802163A EP 2457256 A4 EP2457256 A4 EP 2457256A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor device
- manufacturing
- manufacturing semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009169599 | 2009-07-18 | ||
PCT/JP2010/061299 WO2011010543A1 (en) | 2009-07-18 | 2010-06-25 | Semiconductor device and method for manufacturing semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2457256A1 EP2457256A1 (en) | 2012-05-30 |
EP2457256A4 true EP2457256A4 (en) | 2015-07-29 |
EP2457256B1 EP2457256B1 (en) | 2020-06-17 |
Family
ID=43464651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10802163.5A Active EP2457256B1 (en) | 2009-07-18 | 2010-06-25 | Semiconductor device and method for manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (6) | US8552423B2 (en) |
EP (1) | EP2457256B1 (en) |
JP (8) | JP5455825B2 (en) |
KR (5) | KR20180112107A (en) |
CN (2) | CN102576732B (en) |
TW (7) | TWI693696B (en) |
WO (1) | WO2011010543A1 (en) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5663214B2 (en) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
CN105070749B (en) | 2009-07-18 | 2019-08-09 | 株式会社半导体能源研究所 | Semiconductor device and the method for manufacturing semiconductor device |
WO2011010545A1 (en) * | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20180112107A (en) * | 2009-07-18 | 2018-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing semiconductor device |
WO2011010542A1 (en) * | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5663231B2 (en) * | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | Light emitting device |
TWI596741B (en) * | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | Semiconductor device and method for manufacturing the same |
EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
KR101851926B1 (en) | 2009-09-04 | 2018-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and method for manufacturing the same |
WO2011027702A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
KR101680047B1 (en) * | 2009-10-14 | 2016-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
WO2011052382A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011065216A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
WO2011070901A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN103081092B (en) | 2010-08-27 | 2016-11-09 | 株式会社半导体能源研究所 | Memory device and semiconductor devices |
US8766253B2 (en) * | 2010-09-10 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8803143B2 (en) | 2010-10-20 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including buffer layers with high resistivity |
TWI624878B (en) | 2011-03-11 | 2018-05-21 | 半導體能源研究所股份有限公司 | Method of manufacturing semiconductor device |
US8859330B2 (en) * | 2011-03-23 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8956944B2 (en) * | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI550865B (en) | 2011-05-05 | 2016-09-21 | 半導體能源研究所股份有限公司 | Semiconductor device and method for manufacturing the same |
JP2013069864A (en) * | 2011-09-22 | 2013-04-18 | Canon Inc | Detector and detection system |
US20130082843A1 (en) * | 2011-09-30 | 2013-04-04 | Apple Inc. | Detection of fracture of display panel or other patterned device |
JP2013093565A (en) * | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
TWI484626B (en) * | 2012-02-21 | 2015-05-11 | Formosa Epitaxy Inc | Semiconductor light-emitting component and light-emitting device having same |
JP2014041344A (en) | 2012-07-27 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | Method for driving liquid crystal display device |
US9625764B2 (en) | 2012-08-28 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
KR20140029202A (en) | 2012-08-28 | 2014-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
KR102161078B1 (en) | 2012-08-28 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and manufacturing method thereof |
CN102854687B (en) * | 2012-09-26 | 2014-12-17 | 南京中电熊猫液晶显示科技有限公司 | Metallic oxide fringing field switching mode liquid crystal display panel and manufacture method thereof |
KR102089244B1 (en) * | 2012-12-11 | 2020-03-17 | 엘지디스플레이 주식회사 | Double gate type thin film transistor and organic light emitting diode display device including the same |
KR102209871B1 (en) | 2012-12-25 | 2021-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
KR102196949B1 (en) * | 2013-03-29 | 2020-12-30 | 엘지디스플레이 주식회사 | Thin film transistor, method for manufacturing the same and display device comprising the same |
KR102080065B1 (en) * | 2013-04-30 | 2020-04-07 | 엘지디스플레이 주식회사 | Thin film transistor array substrate and method for fabricating the same |
TWI495942B (en) * | 2013-05-20 | 2015-08-11 | Au Optronics Corp | Pixel structure, display panel and method for fabricating pixel structure |
CN103441128B (en) * | 2013-05-27 | 2016-01-20 | 南京中电熊猫液晶显示科技有限公司 | A kind of tft array substrate and manufacture method thereof |
CN103309108B (en) | 2013-05-30 | 2016-02-10 | 京东方科技集团股份有限公司 | Array base palte and manufacture method, display device |
JP6410496B2 (en) * | 2013-07-31 | 2018-10-24 | 株式会社半導体エネルギー研究所 | Multi-gate transistor |
JP6426402B2 (en) * | 2013-08-30 | 2018-11-21 | 株式会社半導体エネルギー研究所 | Display device |
US9806098B2 (en) * | 2013-12-10 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2015188062A (en) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | semiconductor device |
KR102333604B1 (en) * | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and display device including the same |
TWI666776B (en) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | Semiconductor device and display device having the same |
KR20160034200A (en) * | 2014-09-19 | 2016-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
KR102439023B1 (en) | 2014-10-28 | 2022-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device, manufacturing method of display device, and electronic device |
CN111477657B (en) | 2014-10-28 | 2024-03-05 | 株式会社半导体能源研究所 | Function panel, method for manufacturing function panel, module, and data processing device |
KR102456654B1 (en) | 2014-11-26 | 2022-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and electronic device |
JP6259120B2 (en) | 2014-11-28 | 2018-01-10 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
WO2016084698A1 (en) * | 2014-11-28 | 2016-06-02 | シャープ株式会社 | Semiconductor device and production method therefor |
US20160155803A1 (en) * | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device |
US20160155849A1 (en) * | 2014-12-02 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, module, and electronic device |
US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102653836B1 (en) * | 2015-03-03 | 2024-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device, method for manufacturing the same, or display device including the same |
US10008609B2 (en) * | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
US10002970B2 (en) * | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
CN105070727B (en) * | 2015-08-21 | 2019-01-15 | 京东方科技集团股份有限公司 | A kind of thin-film transistor array base-plate, its production method and display device |
US9773919B2 (en) * | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN108780620A (en) * | 2016-03-15 | 2018-11-09 | 夏普株式会社 | Active-matrix substrate |
SG10201701689UA (en) | 2016-03-18 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device, semiconductor wafer, and electronic device |
US10205008B2 (en) * | 2016-08-03 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10141544B2 (en) | 2016-08-10 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent display device and manufacturing method thereof |
CN106783887B (en) * | 2017-01-03 | 2019-12-24 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
JP6867832B2 (en) | 2017-03-09 | 2021-05-12 | 三菱電機株式会社 | Manufacturing method of array substrate, liquid crystal display device, thin film transistor, and array substrate |
US10263090B2 (en) * | 2017-04-24 | 2019-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN107134543B (en) * | 2017-04-24 | 2019-05-07 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and manufacturing method, display device |
CN107293493A (en) * | 2017-06-06 | 2017-10-24 | 武汉华星光电技术有限公司 | The preparation method of indium gallium zinc oxide thin film transistor (TFT) |
JP6903503B2 (en) | 2017-07-05 | 2021-07-14 | 三菱電機株式会社 | Manufacturing method of thin film transistor substrate, liquid crystal display device and thin film transistor substrate |
CN107526480B (en) * | 2017-09-22 | 2020-04-28 | 厦门天马微电子有限公司 | Display panel and display device |
KR102092034B1 (en) * | 2017-12-06 | 2020-03-23 | 엘지디스플레이 주식회사 | Display device and method of manufacturing the same |
US20200073189A1 (en) * | 2018-08-30 | 2020-03-05 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and method for manufacturing active matrix substrate |
CN110442254B (en) * | 2019-02-26 | 2020-06-09 | 京东方科技集团股份有限公司 | Touch display substrate and touch display device |
US11145679B2 (en) * | 2019-03-22 | 2021-10-12 | Sharp Kabushiki Kaisha | Method for manufacturing active matrix board |
CN112802878B (en) * | 2020-12-30 | 2024-01-30 | 天马微电子股份有限公司 | Display panel and display device |
TWI813217B (en) * | 2021-12-09 | 2023-08-21 | 友達光電股份有限公司 | Semiconductor device and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040038446A1 (en) * | 2002-03-15 | 2004-02-26 | Sanyo Electric Co., Ltd.- | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
US20080284933A1 (en) * | 2007-05-16 | 2008-11-20 | Toppan Printing Co., Ltd. | Image Display Device |
Family Cites Families (197)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (en) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | Thin film transistor |
JPH0244256B2 (en) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
JPH0244260B2 (en) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
JPH0244258B2 (en) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
JPS63210023A (en) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production |
JPH0244262B2 (en) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
JPH0244263B2 (en) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
JP2714016B2 (en) * | 1988-08-05 | 1998-02-16 | 株式会社東芝 | Display device |
JPH05326953A (en) * | 1991-04-26 | 1993-12-10 | Tonen Corp | Production of active matrix image display panel |
JP2776083B2 (en) * | 1991-08-23 | 1998-07-16 | 日本電気株式会社 | Liquid crystal display device and manufacturing method thereof |
JPH05251705A (en) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | Thin-film transistor |
JP3423108B2 (en) | 1994-05-20 | 2003-07-07 | 三洋電機株式会社 | Display device and method of manufacturing display device |
JP3479375B2 (en) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (en) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | Manufacturing method of liquid crystal display device |
TW494266B (en) * | 1996-05-13 | 2002-07-11 | Nanya Technology Corp | Manufacturing method of thin film transistor liquid crystal display |
JP3525665B2 (en) * | 1997-01-07 | 2004-05-10 | 日本電信電話株式会社 | Permanent type telephone device |
JP4044999B2 (en) * | 1998-01-09 | 2008-02-06 | 東芝松下ディスプレイテクノロジー株式会社 | Array substrate for flat display device and manufacturing method thereof |
JP3702096B2 (en) * | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | Thin film transistor and display device |
JP2001051292A (en) * | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and semiconductor display device |
JP4170454B2 (en) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | Article having transparent conductive oxide thin film and method for producing the same |
JP2000150861A (en) * | 1998-11-16 | 2000-05-30 | Tdk Corp | Oxide thin film |
JP3276930B2 (en) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | Transistor and semiconductor device |
JP2000231124A (en) * | 1999-02-12 | 2000-08-22 | Sony Corp | Electrooptical device, driving board for electrooptical device, and production of these |
US6888522B1 (en) * | 1999-03-31 | 2005-05-03 | Minolta Co., Ltd. | Information display apparatus |
JP4552239B2 (en) * | 1999-05-12 | 2010-09-29 | ソニー株式会社 | Thin film semiconductor element for display and display device |
TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4253826B2 (en) * | 1999-09-07 | 2009-04-15 | カシオ計算機株式会社 | Image reading device |
US6620719B1 (en) * | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
JP4042340B2 (en) | 2000-05-17 | 2008-02-06 | カシオ計算機株式会社 | Information equipment |
JP2001345448A (en) | 2000-05-31 | 2001-12-14 | Toshiba Corp | Thin-film transistor and manufacturing method thereof |
JP4850328B2 (en) | 2000-08-29 | 2012-01-11 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP4089858B2 (en) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | Semiconductor device |
KR20020038482A (en) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | Thin film transistor array, method for producing the same, and display panel using the same |
US6580657B2 (en) | 2001-01-04 | 2003-06-17 | International Business Machines Corporation | Low-power organic light emitting diode pixel circuit |
TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP3997731B2 (en) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | Method for forming a crystalline semiconductor thin film on a substrate |
JP2002289859A (en) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | Thin-film transistor |
JP2003029293A (en) | 2001-07-13 | 2003-01-29 | Minolta Co Ltd | Layered display device and manufacturing method therefor |
JP4241315B2 (en) | 2001-07-13 | 2009-03-18 | セイコーエプソン株式会社 | Color filter substrate, electro-optical device, method for manufacturing color filter substrate, method for manufacturing electro-optical device, and electronic apparatus |
JP2003090997A (en) | 2001-07-13 | 2003-03-28 | Seiko Epson Corp | Color filter substrate and electrooptical device, method for manufacturing color filter substrate and method for manufacturing electrooptical device and electronic appliance |
US6952023B2 (en) * | 2001-07-17 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2003037268A (en) * | 2001-07-24 | 2003-02-07 | Minolta Co Ltd | Semiconductor element and manufacturing method therefor |
KR100820104B1 (en) | 2001-07-25 | 2008-04-07 | 엘지.필립스 엘시디 주식회사 | liquid crystal display and manufacturing method of the same |
JP3925839B2 (en) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | Semiconductor memory device and test method thereof |
JP4090716B2 (en) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | Thin film transistor and matrix display device |
JP4634673B2 (en) * | 2001-09-26 | 2011-02-16 | シャープ株式会社 | Liquid crystal display device and manufacturing method thereof |
JP4164562B2 (en) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | Transparent thin film field effect transistor using homologous thin film as active layer |
WO2003040441A1 (en) * | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (en) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | Method for producing LnCuO (S, Se, Te) single crystal thin film |
JP4069648B2 (en) * | 2002-03-15 | 2008-04-02 | カシオ計算機株式会社 | Semiconductor device and display driving device |
JP3933591B2 (en) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | Organic electroluminescent device |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004014982A (en) | 2002-06-11 | 2004-01-15 | Konica Minolta Holdings Inc | Semiconductor circuit and image display device |
JP2004022625A (en) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | Manufacturing method of semiconductor device and its manufacturing method |
US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
JP2004096431A (en) * | 2002-08-30 | 2004-03-25 | Seiko Instruments Inc | Mobile communication terminal and incoming call response method therefor |
US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP2004184150A (en) * | 2002-12-02 | 2004-07-02 | Tohoku Ricoh Co Ltd | Magnetic detecting device, direction detection system, and portable communication terminal |
KR200310610Y1 (en) | 2003-01-24 | 2003-04-14 | 주식회사 카서 | Mobile communication apparatus of receiving signal electrical stimulation type possible wearing wrist |
JP4166105B2 (en) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
JP2004273732A (en) | 2003-03-07 | 2004-09-30 | Sharp Corp | Active matrix substrate and its producing process |
JP2004295716A (en) | 2003-03-28 | 2004-10-21 | I'm Co Ltd | Electronic equipment with display function |
JP4108633B2 (en) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US20050017244A1 (en) | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
TW200511589A (en) * | 2003-07-25 | 2005-03-16 | Hewlett Packard Development Co | Transistor including a deposited channel region having a doped portion |
JP4402396B2 (en) | 2003-08-07 | 2010-01-20 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
CN101452893B (en) | 2003-11-14 | 2011-04-13 | 株式会社半导体能源研究所 | Display device and manufacturing method of the same |
US7247822B2 (en) * | 2004-02-05 | 2007-07-24 | Methode Electronics, Inc. | Carbon fiber heating element assembly and methods for making |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
CN1998087B (en) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | Amorphous oxide and thin film transistor |
US7820529B2 (en) | 2004-03-22 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing integrated circuit |
JP5030388B2 (en) * | 2004-03-22 | 2012-09-19 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film integrated circuit |
JP2005311037A (en) | 2004-04-21 | 2005-11-04 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
CN100505310C (en) | 2004-04-21 | 2009-06-24 | 三菱电机株式会社 | Semiconductor device and image display device |
JP2005333107A (en) | 2004-04-21 | 2005-12-02 | Mitsubishi Electric Corp | Semiconductor device, image display device, and manufacturing method for semiconductor device |
JP4641741B2 (en) | 2004-05-28 | 2011-03-02 | 三菱電機株式会社 | Semiconductor device |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
KR100615233B1 (en) | 2004-07-21 | 2006-08-25 | 삼성에스디아이 주식회사 | TFT, and flat panel display device therewith |
JP4877873B2 (en) * | 2004-08-03 | 2012-02-15 | 株式会社半導体エネルギー研究所 | Display device and manufacturing method thereof |
EP1624333B1 (en) | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
JP2006100760A (en) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | Thin-film transistor and its manufacturing method |
TWM267760U (en) * | 2004-09-10 | 2005-06-11 | Giga Byte Tech Co Ltd | Watch type handset |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
RU2399989C2 (en) * | 2004-11-10 | 2010-09-20 | Кэнон Кабусики Кайся | Amorphous oxide and field-effect transistor using said oxide |
WO2006051994A2 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
US7868326B2 (en) * | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI412138B (en) * | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI569441B (en) * | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
EP1851943B1 (en) * | 2005-02-02 | 2018-01-17 | Audiobrax Indústria E Comércio De Produtos Eletrônicos S.A. | Mobile communication device with music instrumental functions |
WO2006081643A1 (en) | 2005-02-02 | 2006-08-10 | Audiobrax Indústria E Comércio De Produtos Eletrônicos S.A. | Mobile communication device with music instrumental functions |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2006245031A (en) | 2005-02-28 | 2006-09-14 | Casio Comput Co Ltd | Thin film transistor panel |
JP5117667B2 (en) | 2005-02-28 | 2013-01-16 | カシオ計算機株式会社 | Thin film transistor panel |
US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
JP2006269808A (en) | 2005-03-24 | 2006-10-05 | Mitsubishi Electric Corp | Semiconductor device and image display device |
WO2006105077A2 (en) * | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (en) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | Thin film transistor |
JP4856900B2 (en) * | 2005-06-13 | 2012-01-18 | パナソニック株式会社 | Method for manufacturing field effect transistor |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (en) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | Organic Light Emitting Display and Fabrication Method for the same |
KR20070019401A (en) | 2005-08-12 | 2007-02-15 | 삼성전자주식회사 | Drive film, drive package for organic light emitting diode display, method of manufacturing thereof anc organic light emitting diode display including the same |
JP2007059128A (en) * | 2005-08-23 | 2007-03-08 | Canon Inc | Organic electroluminescent display device and manufacturing method thereof |
JP2007073561A (en) | 2005-09-02 | 2007-03-22 | Kochi Prefecture Sangyo Shinko Center | Thin-film transistor |
JP5116225B2 (en) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | Manufacturing method of oxide semiconductor device |
JP4850457B2 (en) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | Thin film transistor and thin film diode |
JP4280736B2 (en) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | Semiconductor element |
JP2007073705A (en) * | 2005-09-06 | 2007-03-22 | Canon Inc | Oxide-semiconductor channel film transistor and its method of manufacturing same |
KR100729043B1 (en) | 2005-09-14 | 2007-06-14 | 삼성에스디아이 주식회사 | Transparent Thin Film Transistor and Fabrication Method for the same |
JP5078246B2 (en) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
JP5064747B2 (en) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device |
EP1995787A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP5037808B2 (en) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | Field effect transistor using amorphous oxide, and display device using the transistor |
US7745798B2 (en) * | 2005-11-15 | 2010-06-29 | Fujifilm Corporation | Dual-phosphor flat panel radiation detector |
CN101577282A (en) * | 2005-11-15 | 2009-11-11 | 株式会社半导体能源研究所 | Semiconductor device and method of manufacturing the same |
JP5129473B2 (en) | 2005-11-15 | 2013-01-30 | 富士フイルム株式会社 | Radiation detector |
KR100732849B1 (en) | 2005-12-21 | 2007-06-27 | 삼성에스디아이 주식회사 | Organic light emitting display device |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (en) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnO film and method of manufacturing TFT using the same |
US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR101157270B1 (en) | 2006-02-17 | 2012-06-15 | 삼성전자주식회사 | Method for Fabricating Organic Thin Film Transistor and Organic Thin Film Transistor Using The Same |
US20070205423A1 (en) | 2006-03-03 | 2007-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5110803B2 (en) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD FOR MANUFACTURING THE SAME |
KR20070101033A (en) | 2006-04-10 | 2007-10-16 | 삼성전자주식회사 | Signal driving device and display apparatus having the same |
KR20070101595A (en) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | Zno thin film transistor |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP4277874B2 (en) * | 2006-05-23 | 2009-06-10 | エプソンイメージングデバイス株式会社 | Manufacturing method of electro-optical device |
KR100801961B1 (en) | 2006-05-26 | 2008-02-12 | 한국전자통신연구원 | Organic Inverter with Dual-Gate Organic Thin-Film Transistor |
JP5028033B2 (en) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | Oxide semiconductor film dry etching method |
JP4404881B2 (en) * | 2006-08-09 | 2010-01-27 | 日本電気株式会社 | Thin film transistor array, manufacturing method thereof, and liquid crystal display device |
JP4609797B2 (en) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | Thin film device and manufacturing method thereof |
JP4999400B2 (en) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | Oxide semiconductor film dry etching method |
JP4332545B2 (en) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
JP4274219B2 (en) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices |
JP5164357B2 (en) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | Semiconductor device and manufacturing method of semiconductor device |
TWI651701B (en) | 2006-09-29 | 2019-02-21 | 日商半導體能源研究所股份有限公司 | Display device and electronic device |
US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (en) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | Color el display, and its manufacturing method |
KR101363555B1 (en) | 2006-12-14 | 2014-02-19 | 삼성디스플레이 주식회사 | Thin film transistor substrate and method of manufacturig the same |
CN100573286C (en) * | 2006-12-25 | 2009-12-23 | 瀚宇彩晶股份有限公司 | Liquid crystal display device structure |
KR101303578B1 (en) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | Etching method of thin film |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
JP5196870B2 (en) | 2007-05-23 | 2013-05-15 | キヤノン株式会社 | Electronic device using oxide semiconductor and method for manufacturing the same |
WO2008105347A1 (en) | 2007-02-20 | 2008-09-04 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
JP2008235871A (en) | 2007-02-20 | 2008-10-02 | Canon Inc | Method for forming thin film transistor and display unit |
US8436349B2 (en) * | 2007-02-20 | 2013-05-07 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
KR100851215B1 (en) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | Thin film transistor and organic light-emitting dislplay device having the thin film transistor |
KR101373435B1 (en) * | 2007-03-22 | 2014-03-14 | 엘지디스플레이 주식회사 | Display substrate, organic emitting diode display device having the same and method of manufacturing thereof |
US7795613B2 (en) * | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (en) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | Thin film transistor substrate and manufacturing method thereof |
KR20080094300A (en) * | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | Thin film transistor and method of manufacturing the same and flat panel display comprising the same |
KR101334181B1 (en) * | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same |
WO2008133345A1 (en) * | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
US20080269568A1 (en) * | 2007-04-25 | 2008-10-30 | Isp Investments Inc. | Methods for validating a radiotherapy plan by a dosimetry service |
US8803781B2 (en) | 2007-05-18 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR101345376B1 (en) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | Fabrication method of ZnO family Thin film transistor |
US20090079920A1 (en) * | 2007-09-20 | 2009-03-26 | Mitsubishi Electric Corporation | Display device and method of manufacturing the same |
KR100959460B1 (en) | 2007-11-16 | 2010-05-25 | 주식회사 동부하이텍 | Transparent thin-film transistor and manufacturing method of transparent thin-film transistor |
JP5377940B2 (en) * | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP5213421B2 (en) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | Oxide semiconductor thin film transistor |
US8202365B2 (en) * | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
TW200828063A (en) | 2007-12-19 | 2008-07-01 | Kinpo Elect Inc | Real-time translation system and method |
JP5291928B2 (en) | 2007-12-26 | 2013-09-18 | 株式会社日立製作所 | Oxide semiconductor device and manufacturing method thereof |
JP5127470B2 (en) | 2008-01-15 | 2013-01-23 | 三菱電機株式会社 | Bus equipment |
JP5540517B2 (en) | 2008-02-22 | 2014-07-02 | 凸版印刷株式会社 | Image display device |
JP2009265271A (en) | 2008-04-23 | 2009-11-12 | Nippon Shokubai Co Ltd | Electro-optical display |
US9041202B2 (en) | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP4623179B2 (en) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | Thin film transistor and manufacturing method thereof |
JP5451280B2 (en) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device |
US9146542B2 (en) * | 2009-03-05 | 2015-09-29 | Raja Singh Tuli | Method for managing web access from a small footprint portable device |
KR101739154B1 (en) | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
WO2011007677A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011010541A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN105070749B (en) | 2009-07-18 | 2019-08-09 | 株式会社半导体能源研究所 | Semiconductor device and the method for manufacturing semiconductor device |
WO2011010545A1 (en) * | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20180112107A (en) * | 2009-07-18 | 2018-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing semiconductor device |
WO2011010542A1 (en) | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9357921B2 (en) * | 2009-10-16 | 2016-06-07 | At&T Intellectual Property I, Lp | Wearable health monitoring system |
-
2010
- 2010-06-25 KR KR1020187028509A patent/KR20180112107A/en not_active Application Discontinuation
- 2010-06-25 WO PCT/JP2010/061299 patent/WO2011010543A1/en active Application Filing
- 2010-06-25 CN CN201080019588.5A patent/CN102576732B/en active Active
- 2010-06-25 KR KR1020197028282A patent/KR102181301B1/en active IP Right Grant
- 2010-06-25 KR KR1020127004265A patent/KR101851403B1/en active IP Right Grant
- 2010-06-25 KR KR1020127026398A patent/KR101414926B1/en active IP Right Grant
- 2010-06-25 CN CN201210271486.3A patent/CN102751295B/en active Active
- 2010-06-25 KR KR1020187010460A patent/KR101907366B1/en active IP Right Grant
- 2010-06-25 EP EP10802163.5A patent/EP2457256B1/en active Active
- 2010-07-12 TW TW107101090A patent/TWI693696B/en active
- 2010-07-12 TW TW109130016A patent/TW202115868A/en unknown
- 2010-07-12 TW TW101126952A patent/TWI472016B/en active
- 2010-07-12 TW TW105127069A patent/TWI644414B/en not_active IP Right Cessation
- 2010-07-12 TW TW108127709A patent/TW202018909A/en unknown
- 2010-07-12 TW TW103140636A patent/TWI557879B/en active
- 2010-07-12 TW TW099122831A patent/TWI481010B/en active
- 2010-07-14 US US12/835,903 patent/US8552423B2/en active Active
- 2010-07-14 JP JP2010160035A patent/JP5455825B2/en active Active
-
2012
- 2012-08-06 US US13/567,327 patent/US8698143B2/en active Active
-
2014
- 2014-01-07 JP JP2014000899A patent/JP5714141B2/en active Active
- 2014-04-03 US US14/244,440 patent/US9263472B2/en active Active
-
2015
- 2015-03-10 JP JP2015047079A patent/JP6030171B2/en active Active
- 2015-12-31 US US14/986,156 patent/US10461098B2/en active Active
-
2016
- 2016-10-19 JP JP2016204942A patent/JP6339151B2/en not_active Expired - Fee Related
-
2018
- 2018-05-09 JP JP2018090453A patent/JP6506445B2/en active Active
-
2019
- 2019-03-28 JP JP2019063819A patent/JP2019149555A/en not_active Withdrawn
- 2019-10-24 US US16/662,394 patent/US11177289B2/en active Active
-
2021
- 2021-02-08 JP JP2021018094A patent/JP2021100124A/en not_active Withdrawn
- 2021-10-28 US US17/512,855 patent/US11715741B2/en active Active
-
2022
- 2022-10-11 JP JP2022163024A patent/JP2023015041A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040038446A1 (en) * | 2002-03-15 | 2004-02-26 | Sanyo Electric Co., Ltd.- | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
US20080284933A1 (en) * | 2007-05-16 | 2008-11-20 | Toppan Printing Co., Ltd. | Image Display Device |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2457256A4 (en) | Semiconductor device and method for manufacturing semiconductor device | |
TWI562242B (en) | Semiconductor device and manufacturing method thereof | |
GB2483414B (en) | Semiconductor Device and Manufacturing Method Thereof | |
EP2461360A4 (en) | Semiconductor device and method for manufacturing same | |
EP2472588A4 (en) | Semiconductor device and method for manufacturing same | |
EP2390932A4 (en) | Semiconductor device and method for manufacturing same | |
HK1213690A1 (en) | Semiconductor device and method for manufacturing same | |
EP2507822A4 (en) | Semiconductor device and manufacturing method thereof | |
EP2497115A4 (en) | Semiconductor device and manufacturing method thereof | |
TWI562379B (en) | Semiconductor device and method for manufacturing semiconductor device | |
TWI562245B (en) | Semiconductor device and method for manufacturing the same | |
EP2481089A4 (en) | Semiconductor device and manufacturing method thereof | |
EP2500947A4 (en) | Semiconductor device and process for manufacturing same | |
EP2341529A4 (en) | Method for manufacturing semiconductor device and semiconductor device | |
EP2494601A4 (en) | Semiconductor device and method for manufacturing the same | |
EP2460183A4 (en) | Semiconductor device and method for manufacturing the same | |
EP2478563A4 (en) | Semiconductor device and method for manufacturing the same | |
EP2511896A4 (en) | Semiconductor device and method for producing same | |
EP2449593A4 (en) | Method for manufacturing semiconductor device | |
EP2449595A4 (en) | Method for manufacturing semiconductor device | |
EP2449594A4 (en) | Method for manufacturing semiconductor device | |
EP2406826A4 (en) | Method for manufacturing semiconductor device | |
EP2500931A4 (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP2486596A4 (en) | Semiconductor device and method for manufacturing the same | |
SG10201403913PA (en) | Method for manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20120217 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: YAMAZAKI, SHUNPEI Owner name: SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
|
DAX | Request for extension of the european patent (deleted) | ||
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
|
RA4 | Supplementary search report drawn up and despatched (corrected) |
Effective date: 20150630 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/12 20060101ALI20150624BHEP Ipc: H01L 21/336 20060101ALI20150624BHEP Ipc: G02F 1/1368 20060101ALI20150624BHEP Ipc: H01L 29/45 20060101ALI20150624BHEP Ipc: H01L 21/28 20060101ALI20150624BHEP Ipc: H01L 21/02 20060101ALI20150624BHEP Ipc: G09F 9/30 20060101ALI20150624BHEP Ipc: H01L 29/786 20060101AFI20150624BHEP |
|
17Q | First examination report despatched |
Effective date: 20160916 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602010064651 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0029786000 Ipc: H01L0029450000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/12 20060101ALI20200109BHEP Ipc: H01L 29/45 20060101AFI20200109BHEP Ipc: H01L 21/02 20060101ALI20200109BHEP |
|
INTG | Intention to grant announced |
Effective date: 20200211 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602010064651 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 1282385 Country of ref document: AT Kind code of ref document: T Effective date: 20200715 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200918 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200917 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20200617 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200917 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1282385 Country of ref document: AT Kind code of ref document: T Effective date: 20200617 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201019 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201017 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602010064651 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200625 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20200630 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200630 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200625 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200630 |
|
26N | No opposition filed |
Effective date: 20210318 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20200917 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200630 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200817 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20210602 Year of fee payment: 12 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200917 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200617 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 602010064651 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20230103 |