TW200511589A - Transistor including a deposited channel region having a doped portion - Google Patents

Transistor including a deposited channel region having a doped portion

Info

Publication number
TW200511589A
TW200511589A TW093121743A TW93121743A TW200511589A TW 200511589 A TW200511589 A TW 200511589A TW 093121743 A TW093121743 A TW 093121743A TW 93121743 A TW93121743 A TW 93121743A TW 200511589 A TW200511589 A TW 200511589A
Authority
TW
Taiwan
Prior art keywords
channel region
transistor including
doped portion
deposited channel
electrode
Prior art date
Application number
TW093121743A
Other languages
Chinese (zh)
Inventor
Randy Hoffman
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/763,354 external-priority patent/US7262463B2/en
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Publication of TW200511589A publication Critical patent/TW200511589A/en

Links

Landscapes

  • Thin Film Transistor (AREA)

Abstract

A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.
TW093121743A 2003-07-25 2004-07-21 Transistor including a deposited channel region having a doped portion TW200511589A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49023903P 2003-07-25 2003-07-25
US10/763,354 US7262463B2 (en) 2003-07-25 2004-01-23 Transistor including a deposited channel region having a doped portion

Publications (1)

Publication Number Publication Date
TW200511589A true TW200511589A (en) 2005-03-16

Family

ID=57798545

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121743A TW200511589A (en) 2003-07-25 2004-07-21 Transistor including a deposited channel region having a doped portion

Country Status (1)

Country Link
TW (1) TW200511589A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084307B2 (en) 2006-11-21 2011-12-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor
US9178048B2 (en) 2012-08-13 2015-11-03 Lg Display Co., Ltd. Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same
TWI557879B (en) * 2009-07-18 2016-11-11 半導體能源研究所股份有限公司 Eletronic device
US9659969B2 (en) 2008-10-03 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI623106B (en) * 2008-10-24 2018-05-01 半導體能源研究所股份有限公司 Oxide semiconductor, thin film transistor, and display device
TWI633682B (en) * 2009-11-27 2018-08-21 半導體能源研究所股份有限公司 Semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084307B2 (en) 2006-11-21 2011-12-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor
US10573665B2 (en) 2008-10-03 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device
US12094884B2 (en) 2008-10-03 2024-09-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US11574932B2 (en) 2008-10-03 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US9659969B2 (en) 2008-10-03 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US10910408B2 (en) 2008-10-03 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI623106B (en) * 2008-10-24 2018-05-01 半導體能源研究所股份有限公司 Oxide semiconductor, thin film transistor, and display device
US10141343B2 (en) 2008-10-24 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US10692894B2 (en) 2008-10-24 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US10978490B2 (en) 2008-10-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US11594555B2 (en) 2008-10-24 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US10461098B2 (en) 2009-07-18 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11177289B2 (en) 2009-07-18 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI557879B (en) * 2009-07-18 2016-11-11 半導體能源研究所股份有限公司 Eletronic device
US11715741B2 (en) 2009-07-18 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI633682B (en) * 2009-11-27 2018-08-21 半導體能源研究所股份有限公司 Semiconductor device
US9178048B2 (en) 2012-08-13 2015-11-03 Lg Display Co., Ltd. Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same

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