FR2296264A1 - Procede de realisation de dispositif semi-conducteur a heterojonction - Google Patents

Procede de realisation de dispositif semi-conducteur a heterojonction

Info

Publication number
FR2296264A1
FR2296264A1 FR7442664A FR7442664A FR2296264A1 FR 2296264 A1 FR2296264 A1 FR 2296264A1 FR 7442664 A FR7442664 A FR 7442664A FR 7442664 A FR7442664 A FR 7442664A FR 2296264 A1 FR2296264 A1 FR 2296264A1
Authority
FR
France
Prior art keywords
realizing
semiconductor device
heterojunction semiconductor
heterojunction
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7442664A
Other languages
English (en)
Other versions
FR2296264B1 (fr
Inventor
Jacques Lebailly
Daniel Diguet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7442664A priority Critical patent/FR2296264A1/fr
Priority to DE19752555764 priority patent/DE2555764A1/de
Priority to US05/639,900 priority patent/US4035205A/en
Priority to CA241,864A priority patent/CA1046647A/fr
Priority to GB52043/75A priority patent/GB1502380A/en
Priority to JP15320475A priority patent/JPS5524691B2/ja
Publication of FR2296264A1 publication Critical patent/FR2296264A1/fr
Application granted granted Critical
Publication of FR2296264B1 publication Critical patent/FR2296264B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7442664A 1974-12-24 1974-12-24 Procede de realisation de dispositif semi-conducteur a heterojonction Granted FR2296264A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7442664A FR2296264A1 (fr) 1974-12-24 1974-12-24 Procede de realisation de dispositif semi-conducteur a heterojonction
DE19752555764 DE2555764A1 (de) 1974-12-24 1975-12-11 Amphoterer heterouebergang
US05/639,900 US4035205A (en) 1974-12-24 1975-12-11 Amphoteric heterojunction
CA241,864A CA1046647A (fr) 1974-12-24 1975-12-16 Heterojonction amphoterique
GB52043/75A GB1502380A (en) 1974-12-24 1975-12-19 Amphoteric hetero-junction semiconductor devices
JP15320475A JPS5524691B2 (fr) 1974-12-24 1975-12-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442664A FR2296264A1 (fr) 1974-12-24 1974-12-24 Procede de realisation de dispositif semi-conducteur a heterojonction

Publications (2)

Publication Number Publication Date
FR2296264A1 true FR2296264A1 (fr) 1976-07-23
FR2296264B1 FR2296264B1 (fr) 1978-06-23

Family

ID=9146570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7442664A Granted FR2296264A1 (fr) 1974-12-24 1974-12-24 Procede de realisation de dispositif semi-conducteur a heterojonction

Country Status (6)

Country Link
US (1) US4035205A (fr)
JP (1) JPS5524691B2 (fr)
CA (1) CA1046647A (fr)
DE (1) DE2555764A1 (fr)
FR (1) FR2296264A1 (fr)
GB (1) GB1502380A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563320A (en) * 1978-11-01 1980-05-13 Matsushita Electric Ind Co Ltd High voltage generator
US4238252A (en) * 1979-07-11 1980-12-09 Hughes Aircraft Company Process for growing indium phosphide of controlled purity
JPS5777669U (fr) * 1980-10-22 1982-05-13
GB2091236B (en) * 1981-01-16 1984-10-17 Pa Management Consult Thin films of compounds and alloy compounds of group 111 and group v elements
JPS5847925A (ja) * 1981-09-17 1983-03-19 Tomoji Suzuki 圧電着火式燃焼器のパイロツトガスバ−ナにおける圧電着火素子及びハンマロツドの固着装置
JPS58156598A (ja) * 1982-03-09 1983-09-17 Semiconductor Res Found 結晶成長法
DE3345214A1 (de) * 1983-12-14 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode
JPS60176997A (ja) * 1984-02-23 1985-09-11 Sumitomo Electric Ind Ltd 低転位密度の３−５化合物半導体単結晶
JPH0666454B2 (ja) * 1985-04-23 1994-08-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション ▲ｉｉｉ▼―▲ｖ▼族半導体デバイス
DE4435079C1 (de) * 1994-09-30 1996-01-18 Siemens Ag Abschaltbares Halbleiterbauelement
KR101262725B1 (ko) * 2011-08-08 2013-05-09 일진엘이디(주) 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
US20170345900A1 (en) * 2014-12-23 2017-11-30 Intel Corporation Diffusion tolerant iii-v semiconductor heterostructures and devices including the same
WO2016105397A1 (fr) 2014-12-23 2016-06-30 Intel Corporation Alliages semi-conducteurs iii-v pour une utilisation dans la sous-ailette de dispositifs à semi-conducteurs non plans et procédés de leur formation
KR102352659B1 (ko) * 2015-06-27 2022-01-18 인텔 코포레이션 저 손상 자기 정렬형 양쪽성 finfet 팁 도핑
US10546858B2 (en) 2015-06-27 2020-01-28 Intel Corporation Low damage self-aligned amphoteric FINFET tip doping
WO2019147602A1 (fr) 2018-01-29 2019-08-01 Northwestern University Dopage amphotère du type p et du type n de semi-conducteurs du groupe iii-vi avec des atomes du groupe iv

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3677836A (en) * 1969-09-23 1972-07-18 Ibm Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices
US3752713A (en) * 1970-02-14 1973-08-14 Oki Electric Ind Co Ltd Method of manufacturing semiconductor elements by liquid phase epitaxial growing method
JPS53271B1 (fr) * 1971-03-05 1978-01-06
JPS5113607B2 (fr) * 1971-08-24 1976-05-01
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
JPS5342230B2 (fr) * 1972-10-19 1978-11-09

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
*REVUE US "JOURNAL OF APPLIED PHYSICS" VOL. 45, NO 4, AVRIL 1974 "GAAS : SI DOUBLE-HETEROSTRUCTURE LED'S" *
J.J. HSIEH ET AL, PAGES 1834-1838) *
REVUE "SOLID-STATE ELECTRONICS", VOL. 15, NO 12, DECEMBRE 1972 "GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH FREQUENCY OPERATION", W.P. DUMKE ET AL, PAGES 1339-1343 *

Also Published As

Publication number Publication date
FR2296264B1 (fr) 1978-06-23
GB1502380A (en) 1978-03-01
JPS5524691B2 (fr) 1980-07-01
US4035205A (en) 1977-07-12
DE2555764A1 (de) 1976-07-08
JPS5189395A (fr) 1976-08-05
CA1046647A (fr) 1979-01-16

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