FR2281646A1 - Procede pour fabriquer un dispositif composite monolithique a semiconducteurs - Google Patents

Procede pour fabriquer un dispositif composite monolithique a semiconducteurs

Info

Publication number
FR2281646A1
FR2281646A1 FR7523978A FR7523978A FR2281646A1 FR 2281646 A1 FR2281646 A1 FR 2281646A1 FR 7523978 A FR7523978 A FR 7523978A FR 7523978 A FR7523978 A FR 7523978A FR 2281646 A1 FR2281646 A1 FR 2281646A1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
composite semiconductor
monolithic composite
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7523978A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2281646A1 publication Critical patent/FR2281646A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7523978A 1974-08-08 1975-07-31 Procede pour fabriquer un dispositif composite monolithique a semiconducteurs Withdrawn FR2281646A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2438256A DE2438256A1 (de) 1974-08-08 1974-08-08 Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung

Publications (1)

Publication Number Publication Date
FR2281646A1 true FR2281646A1 (fr) 1976-03-05

Family

ID=5922779

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7523978A Withdrawn FR2281646A1 (fr) 1974-08-08 1975-07-31 Procede pour fabriquer un dispositif composite monolithique a semiconducteurs

Country Status (7)

Country Link
US (1) US4014714A (fr)
JP (1) JPS5512736B2 (fr)
CA (1) CA1062589A (fr)
DE (1) DE2438256A1 (fr)
FR (1) FR2281646A1 (fr)
GB (1) GB1504636A (fr)
IT (1) IT1040488B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466100A1 (fr) * 1979-09-20 1981-03-27 American Micro Syst Procede d'implantation selective de puits de type p de semi-conducteur oxyde-metal a symetrie complementaire
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
EP0078725A2 (fr) * 1981-10-22 1983-05-11 Fairchild Semiconductor Corporation Procédé de fabrication de transistors bipolaires de dimensions inférieures au micron sans croissance épitaxiale et structure résultante

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor
US4219369A (en) * 1977-09-30 1980-08-26 Hitachi, Ltd. Method of making semiconductor integrated circuit device
JPS5667851U (fr) * 1979-10-31 1981-06-05
JPS5673446A (en) * 1979-11-21 1981-06-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5934496U (ja) * 1982-08-26 1984-03-03 株式会社明電舎 インバ−タの保護回路
SG93197A1 (en) * 1991-02-15 2002-12-17 Canon Kk Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US5364810A (en) * 1992-07-28 1994-11-15 Motorola, Inc. Methods of forming a vertical field-effect transistor and a semiconductor memory cell
US20060108641A1 (en) * 2004-11-19 2006-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Device having a laterally graded well structure and a method for its manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US3725150A (en) * 1971-10-29 1973-04-03 Motorola Inc Process for making a fine geometry, self-aligned device structure
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466100A1 (fr) * 1979-09-20 1981-03-27 American Micro Syst Procede d'implantation selective de puits de type p de semi-conducteur oxyde-metal a symetrie complementaire
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
EP0078725A2 (fr) * 1981-10-22 1983-05-11 Fairchild Semiconductor Corporation Procédé de fabrication de transistors bipolaires de dimensions inférieures au micron sans croissance épitaxiale et structure résultante
EP0078725A3 (en) * 1981-10-22 1987-01-21 Fairchild Camera & Instrument Corporation Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure

Also Published As

Publication number Publication date
CA1062589A (fr) 1979-09-18
IT1040488B (it) 1979-12-20
GB1504636A (en) 1978-03-22
JPS5141976A (fr) 1976-04-08
US4014714A (en) 1977-03-29
DE2438256A1 (de) 1976-02-19
JPS5512736B2 (fr) 1980-04-03

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Legal Events

Date Code Title Description
ST Notification of lapse