IT1040488B - Procedimento per fabbricare un di spositivo composito monolitico a semiconduttori - Google Patents

Procedimento per fabbricare un di spositivo composito monolitico a semiconduttori

Info

Publication number
IT1040488B
IT1040488B IT26116/75A IT2611675A IT1040488B IT 1040488 B IT1040488 B IT 1040488B IT 26116/75 A IT26116/75 A IT 26116/75A IT 2611675 A IT2611675 A IT 2611675A IT 1040488 B IT1040488 B IT 1040488B
Authority
IT
Italy
Prior art keywords
spositive
procedure
manufacturing
monolithic composite
semiconductor monolithic
Prior art date
Application number
IT26116/75A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1040488B publication Critical patent/IT1040488B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT26116/75A 1974-08-08 1975-08-05 Procedimento per fabbricare un di spositivo composito monolitico a semiconduttori IT1040488B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2438256A DE2438256A1 (de) 1974-08-08 1974-08-08 Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung

Publications (1)

Publication Number Publication Date
IT1040488B true IT1040488B (it) 1979-12-20

Family

ID=5922779

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26116/75A IT1040488B (it) 1974-08-08 1975-08-05 Procedimento per fabbricare un di spositivo composito monolitico a semiconduttori

Country Status (7)

Country Link
US (1) US4014714A (it)
JP (1) JPS5512736B2 (it)
CA (1) CA1062589A (it)
DE (1) DE2438256A1 (it)
FR (1) FR2281646A1 (it)
GB (1) GB1504636A (it)
IT (1) IT1040488B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
JPS5429573A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Fine machining method of semiconductor
US4219369A (en) * 1977-09-30 1980-08-26 Hitachi, Ltd. Method of making semiconductor integrated circuit device
US4306916A (en) * 1979-09-20 1981-12-22 American Microsystems, Inc. CMOS P-Well selective implant method
JPS5667851U (it) * 1979-10-31 1981-06-05
JPS5673446A (en) * 1979-11-21 1981-06-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4472873A (en) * 1981-10-22 1984-09-25 Fairchild Camera And Instrument Corporation Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
JPS5934496U (ja) * 1982-08-26 1984-03-03 株式会社明電舎 インバ−タの保護回路
MY114349A (en) * 1991-02-15 2002-10-31 Canon Kk Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution
US5364810A (en) * 1992-07-28 1994-11-15 Motorola, Inc. Methods of forming a vertical field-effect transistor and a semiconductor memory cell
US20060108641A1 (en) * 2004-11-19 2006-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Device having a laterally graded well structure and a method for its manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US3725150A (en) * 1971-10-29 1973-04-03 Motorola Inc Process for making a fine geometry, self-aligned device structure
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard

Also Published As

Publication number Publication date
JPS5141976A (it) 1976-04-08
DE2438256A1 (de) 1976-02-19
FR2281646A1 (fr) 1976-03-05
CA1062589A (en) 1979-09-18
JPS5512736B2 (it) 1980-04-03
GB1504636A (en) 1978-03-22
US4014714A (en) 1977-03-29

Similar Documents

Publication Publication Date Title
IT1037478B (it) Procedimento per la fabbricazione di dispositivo semiconduttori
IT955649B (it) Metodo per la fabbricazione di un dispositivo semiconduttore
IT940727B (it) Procedimento per fabbricare un generatore termoelettrico
IT1024852B (it) Corpo semiconduttore per laser a giunuione
IT1050021B (it) Procedimento per la fabbricazione di fotodiodi
FR2282176A1 (fr) Laser a semi-conducteurs
IT963303B (it) Laser a semiconduttore
IT1027260B (it) Procedimento per migliorare il drogaggio di un materiale semiconduttore
IT1042428B (it) Custodia per unita a semiconduttori
IT1040488B (it) Procedimento per fabbricare un di spositivo composito monolitico a semiconduttori
IT1033295B (it) Procedimento per fabbricare un dispositivo a semiconduttori
IT1024956B (it) Procedimento per la fabbricazione di un dispositivo semiconduttone
SE426068B (sv) Forfarande for framstellning av cykliska polyetrar
SE389853B (sv) Gallerelement for en gallertransportor
DK143072C (da) Fremgangsmaade til fremstilling af en ommagnetiserbar konstruktionsdel
IT965120B (it) Procedimento per la fabbricazione di un corpo cavo
NL7504306A (nl) Halfgeleider-schakeling.
IT1051692B (it) Procedimento per la fabbricazione di semiconduttori composti
IT1049379B (it) Procedimento per la preparazione di un tiolcarbamato
IT1039921B (it) Procedimento per fabbricare undispositivo a semiconduttori
SE7506733L (sv) Halvledare.
IT1037359B (it) Procedimento per fabbricare ugelli separatori
FR2284205A1 (fr) Laser a injection a semi-conducteur
IT1035178B (it) Involucro senza interlaiatura
IT972873B (it) Struttura monolitica integrata a semiconduttore