FR2282444A1 - Procede pour preparer un composant semi-conducteur - Google Patents
Procede pour preparer un composant semi-conducteurInfo
- Publication number
- FR2282444A1 FR2282444A1 FR7525794A FR7525794A FR2282444A1 FR 2282444 A1 FR2282444 A1 FR 2282444A1 FR 7525794 A FR7525794 A FR 7525794A FR 7525794 A FR7525794 A FR 7525794A FR 2282444 A1 FR2282444 A1 FR 2282444A1
- Authority
- FR
- France
- Prior art keywords
- preparing
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
- H01B3/306—Polyimides or polyesterimides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49095015A JPS5123082A (en) | 1974-08-21 | 1974-08-21 | Handotaisochino seizoho |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2282444A1 true FR2282444A1 (fr) | 1976-03-19 |
FR2282444B1 FR2282444B1 (fr) | 1980-03-28 |
Family
ID=14126160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7525794A Granted FR2282444A1 (fr) | 1974-08-21 | 1975-08-20 | Procede pour preparer un composant semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US4064289A (fr) |
JP (1) | JPS5123082A (fr) |
DE (1) | DE2537330A1 (fr) |
FR (1) | FR2282444A1 (fr) |
GB (1) | GB1498096A (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4238528A (en) * | 1978-06-26 | 1980-12-09 | International Business Machines Corporation | Polyimide coating process and material |
JPS57181146A (en) * | 1981-04-30 | 1982-11-08 | Hitachi Ltd | Resin-sealed semiconductor device |
US4661604A (en) * | 1981-06-16 | 1987-04-28 | Trw, Inc. | Monofunctional crosslinking imidophenols |
US5516876A (en) * | 1983-09-27 | 1996-05-14 | The Boeing Company | Polyimide oligomers and blends |
US4584364A (en) * | 1984-02-06 | 1986-04-22 | The Boeing Company | Phenolic-capped imide sulfone resins |
US5705598A (en) | 1985-04-23 | 1998-01-06 | The Boeing Company | Polyester sulfone oligomers and blends |
US5969079A (en) | 1985-09-05 | 1999-10-19 | The Boeing Company | Oligomers with multiple chemically functional end caps |
US5714566A (en) | 1981-11-13 | 1998-02-03 | The Boeing Company | Method for making multiple chemically functional oligomers |
US4536559A (en) * | 1983-06-17 | 1985-08-20 | The Boeing Company | Thermally stable polyimide polysulfone compositions for composite structures |
US5693741A (en) | 1988-03-15 | 1997-12-02 | The Boeing Company | Liquid molding compounds |
US5210213A (en) | 1983-06-17 | 1993-05-11 | The Boeing Company | Dimensional, crosslinkable oligomers |
US5506060A (en) * | 1981-11-13 | 1996-04-09 | The Boeing Company | Method for making multidimensional ether or ester oligomers |
US5512676A (en) | 1987-09-03 | 1996-04-30 | The Boeing Company | Extended amideimide hub for multidimensional oligomers |
US4547553A (en) * | 1982-07-29 | 1985-10-15 | The Boeing Company | Polybutadiene modified polyester compositions |
JPS59136327A (ja) * | 1983-01-25 | 1984-08-04 | Showa Denko Kk | 共重合体及びその製造方法 |
JPS60501113A (ja) * | 1983-04-22 | 1985-07-18 | エム・アンド・テイ・ケミカルス・インコ−ポレイテツド | 改良されたポリアミド酸およびポリイミド |
US4871475A (en) * | 1985-10-07 | 1989-10-03 | The Boeing Company | Polysulfone and polyethersulfone oligomers |
US4684714A (en) * | 1983-09-27 | 1987-08-04 | The Boeing Company | Method for making polyimide oligomers |
US5449950A (en) * | 1984-04-16 | 1995-09-12 | Canon Kabushiki Kaisha | Photosensor with organic and inorganic insulation layers |
US5618907A (en) | 1985-04-23 | 1997-04-08 | The Boeing Company | Thallium catalyzed multidimensional ester oligomers |
KR910008339B1 (ko) * | 1987-09-17 | 1991-10-12 | 히다찌가세이고오교가부시끼가이샤 | 폴리이미드-이소인드로퀴나졸린디온 및 그의 전구체의 제조방법 |
US5817744A (en) | 1988-03-14 | 1998-10-06 | The Boeing Company | Phenylethynyl capped imides |
DE3816457A1 (de) * | 1988-05-13 | 1989-11-23 | Josowicz Mira | Verfahren zur verkapselung von elektronischen bauelementen |
US5667899A (en) * | 1992-09-16 | 1997-09-16 | Hitachi Chemical Co. Ltd. | Electrically conductive bonding films |
JP3288146B2 (ja) * | 1992-09-16 | 2002-06-04 | 日立化成工業株式会社 | 導電性接着フィルム、接着法、導電性接着フィルム付き支持部材及び半導体装置 |
JP5966618B2 (ja) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | 成膜方法 |
TWI658066B (zh) * | 2017-02-03 | 2019-05-01 | 台虹科技股份有限公司 | 聚醯亞胺聚合物以及聚醯亞胺膜 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1195411B (de) * | 1960-05-10 | 1965-06-24 | Intermetall | Halbleiterbauelement mit festhaftender Oberflaechenschutzschicht auf dem Halbleiterkoerper |
GB1257071A (fr) * | 1969-01-22 | 1971-12-15 | ||
JPS525586Y1 (fr) * | 1969-03-28 | 1977-02-04 | ||
US3868351A (en) * | 1970-12-02 | 1975-02-25 | Gen Electric | Solution process for the preparation of polyimdies from diamines and anhydrides |
-
1974
- 1974-08-21 JP JP49095015A patent/JPS5123082A/ja active Pending
-
1975
- 1975-08-20 FR FR7525794A patent/FR2282444A1/fr active Granted
- 1975-08-20 GB GB34618/75A patent/GB1498096A/en not_active Expired
- 1975-08-21 DE DE19752537330 patent/DE2537330A1/de not_active Withdrawn
- 1975-08-21 US US05/606,354 patent/US4064289A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1498096A (en) | 1978-01-18 |
FR2282444B1 (fr) | 1980-03-28 |
DE2537330A1 (de) | 1976-03-04 |
US4064289A (en) | 1977-12-20 |
JPS5123082A (en) | 1976-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2282444A1 (fr) | Procede pour preparer un composant semi-conducteur | |
BE757569A (fr) | Procede pour preparer un support photographique et produit obtenu | |
FR2285951A1 (fr) | Procede pour preparer des particules | |
FR2283513A1 (fr) | Procede pour exploiter un element de compensation | |
BE858911A (fr) | Procede pour preparer du m-phenoxybenzaldehyde | |
BE859821A (fr) | Procede ameliore pour preparer des ether-sulfonates | |
BE795496A (fr) | Procede pour preparer une composition catalytique a base zeolitique | |
BE834718A (fr) | Procede pour preparer des amines tertiaires | |
RO71900A (fr) | Procede pour preparer 1l-desoxy-16-aryle-omega-tetranorprostaglandine | |
BE821370A (fr) | Procede pour preparer des acides ether-polycarboxyliques | |
FR2281646A1 (fr) | Procede pour fabriquer un dispositif composite monolithique a semiconducteurs | |
FR2274124A1 (fr) | Procede pour preparer un fil isolant | |
FR2273847A1 (fr) | Procede pour preparer une composition de revetement pulverisee thermodurcissable | |
RO70060A (fr) | Procede pour preparer un compose de 4-(4-biphenylile)-1-butanole | |
FR2296011A1 (fr) | Procede pour preparer une cholesterol-oxydase | |
BE849598A (fr) | Procede pour preparer des organosiloxannes | |
RO84248A (fr) | Procede pour preparer 2(-aminophenylimino)-3-aza-cycloalcanes | |
RO75980A (fr) | Procede pour preparer 2beta-methylpyperazino-16-beta-pyperidino-3alpha-17beta-diacetoxy-5alpha-androstane | |
BE836051A (fr) | Procede pour preparer des ethers | |
BE849642A (fr) | Procede pour preparer un compose de type morpholine | |
RO63842A (fr) | Procede pour preparer des 7-acyleamido-7-methoxy-cephal | |
FR2298548A1 (fr) | Procede pour preparer des 2-amino-benzothiazoles | |
RO66265A (fr) | Procede pour preparer s-triazole-(3,4-b)-benzothiazolyle | |
FR2330677A1 (fr) | Procede pour preparer des amines tertiaires | |
FR2311042A1 (fr) | Procede pour preparer du polychloroprene |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |