FR2283513A1 - Procede pour exploiter un element de compensation - Google Patents

Procede pour exploiter un element de compensation

Info

Publication number
FR2283513A1
FR2283513A1 FR7526032A FR7526032A FR2283513A1 FR 2283513 A1 FR2283513 A1 FR 2283513A1 FR 7526032 A FR7526032 A FR 7526032A FR 7526032 A FR7526032 A FR 7526032A FR 2283513 A1 FR2283513 A1 FR 2283513A1
Authority
FR
France
Prior art keywords
operating
compensation element
compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7526032A
Other languages
English (en)
Other versions
FR2283513B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742441243 external-priority patent/DE2441243C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2283513A1 publication Critical patent/FR2283513A1/fr
Application granted granted Critical
Publication of FR2283513B1 publication Critical patent/FR2283513B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)
FR7526032A 1974-08-28 1975-08-22 Procede pour exploiter un element de compensation Granted FR2283513A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742441243 DE2441243C3 (de) 1974-08-28 Kompensationsspeicherelement

Publications (2)

Publication Number Publication Date
FR2283513A1 true FR2283513A1 (fr) 1976-03-26
FR2283513B1 FR2283513B1 (fr) 1978-09-22

Family

ID=5924311

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7526032A Granted FR2283513A1 (fr) 1974-08-28 1975-08-22 Procede pour exploiter un element de compensation

Country Status (6)

Country Link
US (1) US4027294A (fr)
JP (1) JPS5837635B2 (fr)
CA (1) CA1054712A (fr)
FR (1) FR2283513A1 (fr)
GB (1) GB1523752A (fr)
IT (1) IT1042051B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2557165C3 (de) * 1975-12-18 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Decoderschaltung und ihre Anordnung zur Integrierung auf einem Halbleiterbaustein
JPS52106640A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Memory peripheral circuit
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
US4095282A (en) * 1976-11-23 1978-06-13 Westinghouse Electric Corp. Memory including varactor circuit to boost address signals
JPS54101230A (en) * 1978-01-26 1979-08-09 Nec Corp Dynamic mos memory circuit
US4533843A (en) * 1978-09-07 1985-08-06 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4543500A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier voltage boost for row address lines
US4748349A (en) * 1978-09-22 1988-05-31 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
US4420822A (en) * 1982-03-19 1983-12-13 Signetics Corporation Field plate sensing in single transistor, single capacitor MOS random access memory
US4506351A (en) * 1982-06-23 1985-03-19 International Business Machines Corporation One-device random access memory having enhanced sense signal
US4585958A (en) * 1983-12-30 1986-04-29 At&T Bell Laboratories IC chip with noise suppression circuit
JPH0789435B2 (ja) * 1984-04-06 1995-09-27 株式会社日立製作所 ダイナミツク型ｒａｍ
JPS61138140U (fr) * 1985-02-19 1986-08-27
JPH01163697A (ja) * 1987-09-26 1989-06-27 Toyoda Gosei Co Ltd 空調コントロールボックス
JP3085803B2 (ja) * 1992-11-26 2000-09-11 株式会社東芝 差動電流源回路
EP0663666B1 (fr) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Circuit intégré de mémoire à semi-conducteurs et méthode d'opération
ATE177246T1 (de) * 1994-01-12 1999-03-15 Siemens Ag Integrierte halbleiterspeicherschaltung und verfahren zu ihrem betrieb

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID STATE CIRCUITS, VOLUME SC8, NO. 5, OCTOBRE 1973, NEW YORK, BOLL ET LYNCH "DESIGN OF A HIGH-PERFORMANCE 1024-B SWITCHED CAPACITOR P-CHANNEL IGFET MEMORY CHIP", PAGES 310 A 318 *

Also Published As

Publication number Publication date
GB1523752A (en) 1978-09-06
CA1054712A (fr) 1979-05-15
JPS5149642A (fr) 1976-04-30
DE2441243A1 (de) 1976-03-18
IT1042051B (it) 1980-01-30
JPS5837635B2 (ja) 1983-08-17
DE2441243B2 (de) 1976-07-15
FR2283513B1 (fr) 1978-09-22
US4027294A (en) 1977-05-31

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Legal Events

Date Code Title Description
ST Notification of lapse