WO2012020968A3 - 오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법 - Google Patents

오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법 Download PDF

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Publication number
WO2012020968A3
WO2012020968A3 PCT/KR2011/005796 KR2011005796W WO2012020968A3 WO 2012020968 A3 WO2012020968 A3 WO 2012020968A3 KR 2011005796 W KR2011005796 W KR 2011005796W WO 2012020968 A3 WO2012020968 A3 WO 2012020968A3
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WO
WIPO (PCT)
Prior art keywords
light emitting
ohmic electrode
electrode structure
emitting diode
semiconductor light
Prior art date
Application number
PCT/KR2011/005796
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English (en)
French (fr)
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WO2012020968A2 (ko
Inventor
이종람
송양희
Original Assignee
서울옵토디바이스 주식회사
포항공과대학교 산학협력단
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Application filed by 서울옵토디바이스 주식회사, 포항공과대학교 산학협력단 filed Critical 서울옵토디바이스 주식회사
Priority to US13/816,793 priority Critical patent/US9196796B2/en
Priority to CN201180039486.4A priority patent/CN103069587B/zh
Publication of WO2012020968A2 publication Critical patent/WO2012020968A2/ko
Publication of WO2012020968A3 publication Critical patent/WO2012020968A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법이 개시된다. 본 발명의 일 측면에 따른 반도체 발광 소자는, 상부 표면이 N-면인 발광 구조체와，상기 발광 구조체 상에 위치하는 오믹 전극 구조체를 포함한다. 여기서, 상기 오믹 전극 구조체는 상기 발광 구조체의 N-면으로부터 하부 확산 방지층, 접촉층, 상부 확산 방지층 및 A1 보호충을 포함한다. 하부 확산 방지층 /접촉층 /상부 확산 방지층 /A1 보호충을 포함하는 다층 구조의 오믹 전극 구조체를 채택함으로써, N-면 반도체층 상의 오믹 접촉 특성 열화를 방지하여 열적 안정성이 우수한 반도체 발광 소자를 제공할 수 있다.
PCT/KR2011/005796 2010-08-13 2011-08-09 오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법 WO2012020968A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/816,793 US9196796B2 (en) 2010-08-13 2011-08-09 Semiconductor light emitting diode having ohmic electrode structure and method of manufacturing the same
CN201180039486.4A CN103069587B (zh) 2010-08-13 2011-08-09 具有欧姆电极结构体的半导体发光元件及制造此的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0078115 2010-08-13
KR1020100078115A KR101731056B1 (ko) 2010-08-13 2010-08-13 오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법

Publications (2)

Publication Number Publication Date
WO2012020968A2 WO2012020968A2 (ko) 2012-02-16
WO2012020968A3 true WO2012020968A3 (ko) 2012-05-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005796 WO2012020968A2 (ko) 2010-08-13 2011-08-09 오믹 전극 구조체를 갖는 반도체 발광 소자 및 그것을 제조하는 방법

Country Status (4)

Country Link
US (1) US9196796B2 (ko)
KR (1) KR101731056B1 (ko)
CN (1) CN103069587B (ko)
WO (1) WO2012020968A2 (ko)

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Publication number Priority date Publication date Assignee Title
KR101317106B1 (ko) * 2012-08-20 2013-10-11 전북대학교산학협력단 오믹 컨택 제조방법 및 이에 의하여 제조된 오믹 컨택
KR101535852B1 (ko) * 2014-02-11 2015-07-13 포항공과대학교 산학협력단 나노구조체 전사를 이용한 발광다이오드 제조방법과 그 발광다이오드
WO2019133624A1 (en) * 2017-12-27 2019-07-04 Princeton Optronics, Inc. Semiconductor devices and methods for producing the same
US11195721B2 (en) * 2018-01-16 2021-12-07 Princeton Optronics, Inc. Ohmic contacts and methods for manufacturing the same
KR102051477B1 (ko) * 2018-02-26 2019-12-04 주식회사 세미콘라이트 반도체 발광소자의 제조방법
CN112447889A (zh) * 2020-11-27 2021-03-05 广东省科学院半导体研究所 一种led芯片及其制作方法
WO2023161632A1 (en) 2022-02-24 2023-08-31 Purelifi Limited Optical wireless communication apparatus, system and method

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JP2005064485A (ja) * 2003-07-25 2005-03-10 Showa Denko Kk 化合物半導体発光素子およびその製造方法
KR100849737B1 (ko) * 2007-07-06 2008-08-01 (주)더리즈 발광 다이오드 소자와 그 제조 방법
KR20090115322A (ko) * 2008-05-02 2009-11-05 송준오 그룹 3족 질화물계 반도체 소자

Also Published As

Publication number Publication date
KR20120015733A (ko) 2012-02-22
WO2012020968A2 (ko) 2012-02-16
KR101731056B1 (ko) 2017-04-27
US20130221324A1 (en) 2013-08-29
CN103069587B (zh) 2016-09-07
CN103069587A (zh) 2013-04-24
US9196796B2 (en) 2015-11-24

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