WO2013022227A3 - 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 - Google Patents

전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 Download PDF

Info

Publication number
WO2013022227A3
WO2013022227A3 PCT/KR2012/006178 KR2012006178W WO2013022227A3 WO 2013022227 A3 WO2013022227 A3 WO 2013022227A3 KR 2012006178 W KR2012006178 W KR 2012006178W WO 2013022227 A3 WO2013022227 A3 WO 2013022227A3
Authority
WO
WIPO (PCT)
Prior art keywords
current spreading
emitting element
semiconductor light
nitride semiconductor
manufacturing same
Prior art date
Application number
PCT/KR2012/006178
Other languages
English (en)
French (fr)
Other versions
WO2013022227A2 (ko
Inventor
최원진
박정원
Original Assignee
일진머티리얼즈 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진머티리얼즈 주식회사 filed Critical 일진머티리얼즈 주식회사
Priority to US14/237,299 priority Critical patent/US9099600B2/en
Priority to CN201280038922.0A priority patent/CN103748698A/zh
Priority to JP2014524919A priority patent/JP2014522125A/ja
Priority to EP20120821814 priority patent/EP2743996A4/en
Publication of WO2013022227A2 publication Critical patent/WO2013022227A2/ko
Publication of WO2013022227A3 publication Critical patent/WO2013022227A3/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 전류 확산용 불순물을 함유한 전류 확산부를 이용하여 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법을 개시한다. 본 발명의 질화물 반도체 발광소자는 n형 질화물층; 상기 n형 질화물층 상에 전류 확산용 불순물을 포함하는 질화물로 형성된 전류 확산부; 상기 전류 확산부 상에 형성된 활성층; 및 상기 활성층 상에 형성된 p형 질화물층을 포함하고, 상기 전류 확산용 불순물은 탄소(C)를 포함하는 것을 특징으로 한다.
PCT/KR2012/006178 2011-08-08 2012-08-02 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 WO2013022227A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/237,299 US9099600B2 (en) 2011-08-08 2012-08-02 Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same
CN201280038922.0A CN103748698A (zh) 2011-08-08 2012-08-02 电流扩散效果优秀的氮化物半导体发光器件及其制备方法
JP2014524919A JP2014522125A (ja) 2011-08-08 2012-08-02 電流拡散効果に優れる窒化物半導体発光素子及びその製造方法
EP20120821814 EP2743996A4 (en) 2011-08-08 2012-08-02 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT PROVIDING BETTER CURRENT INTENSITY SPREAD AND METHOD OF MANUFACTURING THE SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0078778 2011-08-08
KR1020110078778A KR101175183B1 (ko) 2011-08-08 2011-08-08 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
WO2013022227A2 WO2013022227A2 (ko) 2013-02-14
WO2013022227A3 true WO2013022227A3 (ko) 2013-04-11

Family

ID=46887462

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/006178 WO2013022227A2 (ko) 2011-08-08 2012-08-02 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법

Country Status (7)

Country Link
US (1) US9099600B2 (ko)
EP (1) EP2743996A4 (ko)
JP (1) JP2014522125A (ko)
KR (1) KR101175183B1 (ko)
CN (1) CN103748698A (ko)
TW (1) TWI495149B (ko)
WO (1) WO2013022227A2 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
US9923119B2 (en) 2013-10-01 2018-03-20 Opto Tech Corporation White LED chip and white LED packaging device
TWI509835B (zh) * 2013-10-01 2015-11-21 Opto Tech Corp 白光二極體
KR102224109B1 (ko) * 2014-07-15 2021-03-09 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 조명시스템
US9608103B2 (en) * 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
CN104300064B (zh) * 2014-10-10 2018-04-24 华灿光电(苏州)有限公司 一种GaN基发光二极管的外延片及其制备方法
CN104701359B (zh) * 2015-03-10 2018-02-02 苏州能屋电子科技有限公司 垂直结构AlGaN/GaN HEMT器件及其制作方法
CN104659082B (zh) * 2015-03-12 2018-02-02 苏州能屋电子科技有限公司 垂直结构AlGaN/GaN HEMT器件及其制作方法
CN105845788B (zh) * 2016-04-08 2018-02-09 湘能华磊光电股份有限公司 一种led电流扩展层外延生长方法
CN105869994B (zh) * 2016-04-14 2018-04-06 湘能华磊光电股份有限公司 一种超晶格层的生长方法及含此结构的led外延结构
CN105870282B (zh) * 2016-04-14 2018-02-16 湘能华磊光电股份有限公司 一种电流扩展层的生长方法及含此结构的led外延结构
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
KR102432226B1 (ko) * 2017-12-01 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN109346566A (zh) * 2018-08-31 2019-02-15 华灿光电(浙江)有限公司 一种氮化镓基发光二极管外延片及其制备方法
TWI816186B (zh) * 2021-09-28 2023-09-21 晶元光電股份有限公司 發光元件及其製造方法
US20240128419A1 (en) * 2022-09-29 2024-04-18 Bolb Inc. Current spreading structure for light-emitting diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
KR20070027327A (ko) * 2005-09-06 2007-03-09 엘지전자 주식회사 수직형 발광 다이오드 및 그 제조방법
KR100738399B1 (ko) * 2006-04-18 2007-07-12 삼성전기주식회사 질화물 반도체 발광소자
JP2008066514A (ja) * 2006-09-07 2008-03-21 Hitachi Cable Ltd 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
KR100979701B1 (ko) * 2008-08-25 2010-09-03 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693963A (en) 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
JP3491375B2 (ja) * 1995-03-30 2004-01-26 昭和電工株式会社 発光素子及びその製造方法
JPH0992883A (ja) * 1995-09-28 1997-04-04 Toshiba Corp 半導体ウェハ、半導体素子、その製造方法及び半導体素子の製造に用いる成長装置
JP3744211B2 (ja) * 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
JP3897448B2 (ja) * 1998-04-27 2007-03-22 日亜化学工業株式会社 窒化物半導体発光素子
JP2000101133A (ja) 1998-09-21 2000-04-07 Hitachi Cable Ltd 発光素子用エピタキシャルウェハ及びその製造方法
JP3063756B1 (ja) * 1998-10-06 2000-07-12 日亜化学工業株式会社 窒化物半導体素子
US6810065B1 (en) * 2000-11-28 2004-10-26 Optical Communication Productions, Inc. Low electrical resistance n-type mirror for optoelectronic devices
SG157960A1 (en) * 2001-10-22 2010-01-29 Univ Yale Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
US7498182B1 (en) * 2005-03-18 2009-03-03 The United States Of America As Represented By The Secretary Of The Army Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same
WO2007013257A1 (ja) 2005-07-29 2007-02-01 Matsushita Electric Industrial Co., Ltd. 窒化物系半導体素子
JP5068020B2 (ja) * 2006-02-20 2012-11-07 シャープ株式会社 窒化物半導体発光素子の製造方法
KR101007086B1 (ko) 2008-09-02 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2010232649A (ja) 2009-03-06 2010-10-14 Showa Denko Kk Iii族窒化物半導体発光素子及びその製造方法、並びにランプ
US8536615B1 (en) * 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
TW201126755A (en) 2010-01-29 2011-08-01 Advanced Optoelectronic Tech Light emitting diode and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
KR20070027327A (ko) * 2005-09-06 2007-03-09 엘지전자 주식회사 수직형 발광 다이오드 및 그 제조방법
KR100738399B1 (ko) * 2006-04-18 2007-07-12 삼성전기주식회사 질화물 반도체 발광소자
JP2008066514A (ja) * 2006-09-07 2008-03-21 Hitachi Cable Ltd 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
KR100979701B1 (ko) * 2008-08-25 2010-09-03 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2743996A4 *

Also Published As

Publication number Publication date
JP2014522125A (ja) 2014-08-28
TW201308659A (zh) 2013-02-16
EP2743996A2 (en) 2014-06-18
WO2013022227A2 (ko) 2013-02-14
US9099600B2 (en) 2015-08-04
KR101175183B1 (ko) 2012-08-17
EP2743996A4 (en) 2015-04-08
US20140191193A1 (en) 2014-07-10
CN103748698A (zh) 2014-04-23
TWI495149B (zh) 2015-08-01

Similar Documents

Publication Publication Date Title
WO2013022227A3 (ko) 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
WO2012040080A3 (en) Microelectronic transistor having an epitaxial graphene channel layer
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2009120011A3 (ko) 발광소자 및 그 제조방법
GB2515874A9 (en) Light emitting diode package and method for manufacturing same
EP2731151A4 (en) METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT
WO2013032304A3 (ko) 유기전자소자 및 그 제조방법
WO2013051875A3 (ko) 유기 발광 소자 및 이의 제조방법
WO2013022228A3 (ko) 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
WO2012138172A3 (ko) 신규 유기금속 화합물 및 이를 이용한 유기 발광 소자
WO2009108173A3 (en) Methods for formation of substrate elements
WO2012047042A3 (ko) 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법
EP2587556A4 (en) SAPPHIRE SUBSTRATE, PROCESS FOR PRODUCTION THEREOF, AND NITRIDE SEMICONDUCTOR LUMESCENT ELEMENT
WO2013002509A3 (ko) 새로운 화합물 및 이를 이용한 유기 발광 소자
WO2011019163A3 (ko) 전자장치
WO2012140050A3 (de) Verfahren zur herstellung eines licht emittierenden halbleiterbauelements und licht emittierendes halbleiterbauelement
EP2600394A4 (en) EPITACTIVE SUBSTRATE FOR A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT, PN TRANSMISSION DIODE AND METHOD FOR PRODUCING AN EPITACTIC SUBSTRATE FOR A SEMICONDUCTOR COMPONENT
WO2012146892A3 (en) Improved limit collar
WO2012160604A8 (ja) 発光素子チップ及びその製造方法
EP2477234A4 (en) Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer
EP2624318A4 (en) GROUP III ELEMENT NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
IN2014DN09305A (ko)
WO2009002129A3 (en) Semiconductor light emitting device and method of manufacturing the same
TW200723564A (en) Semiconductor element and manufacturing method of the same
WO2011123650A3 (en) Vertical structure led current spreading by implanted regions

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12821814

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 14237299

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2014524919

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

REEP Request for entry into the european phase

Ref document number: 2012821814

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2012821814

Country of ref document: EP