WO2013022227A3 - 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 - Google Patents

전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 Download PDF

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Publication number
WO2013022227A3
WO2013022227A3 PCT/KR2012/006178 KR2012006178W WO2013022227A3 WO 2013022227 A3 WO2013022227 A3 WO 2013022227A3 KR 2012006178 W KR2012006178 W KR 2012006178W WO 2013022227 A3 WO2013022227 A3 WO 2013022227A3
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WO
WIPO (PCT)
Prior art keywords
current spreading
emitting element
semiconductor light
nitride semiconductor
manufacturing same
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PCT/KR2012/006178
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English (en)
French (fr)
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WO2013022227A2 (ko
Inventor
최원진
박정원
Original Assignee
일진머티리얼즈 주식회사
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Application filed by 일진머티리얼즈 주식회사 filed Critical 일진머티리얼즈 주식회사
Priority to JP2014524919A priority Critical patent/JP2014522125A/ja
Priority to EP20120821814 priority patent/EP2743996A4/en
Priority to CN201280038922.0A priority patent/CN103748698A/zh
Priority to US14/237,299 priority patent/US9099600B2/en
Publication of WO2013022227A2 publication Critical patent/WO2013022227A2/ko
Publication of WO2013022227A3 publication Critical patent/WO2013022227A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 전류 확산용 불순물을 함유한 전류 확산부를 이용하여 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법을 개시한다. 본 발명의 질화물 반도체 발광소자는 n형 질화물층; 상기 n형 질화물층 상에 전류 확산용 불순물을 포함하는 질화물로 형성된 전류 확산부; 상기 전류 확산부 상에 형성된 활성층; 및 상기 활성층 상에 형성된 p형 질화물층을 포함하고, 상기 전류 확산용 불순물은 탄소(C)를 포함하는 것을 특징으로 한다.
PCT/KR2012/006178 2011-08-08 2012-08-02 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 WO2013022227A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014524919A JP2014522125A (ja) 2011-08-08 2012-08-02 電流拡散効果に優れる窒化物半導体発光素子及びその製造方法
EP20120821814 EP2743996A4 (en) 2011-08-08 2012-08-02 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT PROVIDING BETTER CURRENT INTENSITY SPREAD AND METHOD OF MANUFACTURING THE SAME
CN201280038922.0A CN103748698A (zh) 2011-08-08 2012-08-02 电流扩散效果优秀的氮化物半导体发光器件及其制备方法
US14/237,299 US9099600B2 (en) 2011-08-08 2012-08-02 Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110078778A KR101175183B1 (ko) 2011-08-08 2011-08-08 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
KR10-2011-0078778 2011-08-08

Publications (2)

Publication Number Publication Date
WO2013022227A2 WO2013022227A2 (ko) 2013-02-14
WO2013022227A3 true WO2013022227A3 (ko) 2013-04-11

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PCT/KR2012/006178 WO2013022227A2 (ko) 2011-08-08 2012-08-02 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법

Country Status (7)

Country Link
US (1) US9099600B2 (ko)
EP (1) EP2743996A4 (ko)
JP (1) JP2014522125A (ko)
KR (1) KR101175183B1 (ko)
CN (1) CN103748698A (ko)
TW (1) TWI495149B (ko)
WO (1) WO2013022227A2 (ko)

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KR102224109B1 (ko) * 2014-07-15 2021-03-09 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 조명시스템
US9608103B2 (en) * 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
CN104300064B (zh) * 2014-10-10 2018-04-24 华灿光电(苏州）有限公司 一种GaN基发光二极管的外延片及其制备方法
CN104701359B (zh) * 2015-03-10 2018-02-02 苏州能屋电子科技有限公司 垂直结构AlGaN/GaN HEMT器件及其制作方法
CN104659082B (zh) * 2015-03-12 2018-02-02 苏州能屋电子科技有限公司 垂直结构AlGaN/GaN HEMT器件及其制作方法
CN105845788B (zh) * 2016-04-08 2018-02-09 湘能华磊光电股份有限公司 一种led电流扩展层外延生长方法
CN105869994B (zh) * 2016-04-14 2018-04-06 湘能华磊光电股份有限公司 一种超晶格层的生长方法及含此结构的led外延结构
CN105870282B (zh) * 2016-04-14 2018-02-16 湘能华磊光电股份有限公司 一种电流扩展层的生长方法及含此结构的led外延结构
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KR102432226B1 (ko) * 2017-12-01 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN109346566A (zh) * 2018-08-31 2019-02-15 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
TWI839293B (zh) * 2021-09-28 2024-04-11 晶元光電股份有限公司 發光元件及其製造方法
TWI816186B (zh) * 2021-09-28 2023-09-21 晶元光電股份有限公司 發光元件及其製造方法
US20240128419A1 (en) * 2022-09-29 2024-04-18 Bolb Inc. Current spreading structure for light-emitting diode

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Also Published As

Publication number Publication date
US9099600B2 (en) 2015-08-04
EP2743996A4 (en) 2015-04-08
TWI495149B (zh) 2015-08-01
EP2743996A2 (en) 2014-06-18
TW201308659A (zh) 2013-02-16
CN103748698A (zh) 2014-04-23
US20140191193A1 (en) 2014-07-10
KR101175183B1 (ko) 2012-08-17
JP2014522125A (ja) 2014-08-28
WO2013022227A2 (ko) 2013-02-14

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