WO2012047042A3 - 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 - Google Patents

미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 Download PDF

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Publication number
WO2012047042A3
WO2012047042A3 PCT/KR2011/007413 KR2011007413W WO2012047042A3 WO 2012047042 A3 WO2012047042 A3 WO 2012047042A3 KR 2011007413 W KR2011007413 W KR 2011007413W WO 2012047042 A3 WO2012047042 A3 WO 2012047042A3
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micro
forming method
organic
channel
transistor
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PCT/KR2011/007413
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English (en)
French (fr)
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WO2012047042A2 (ko
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민성용
김태식
이태우
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포항공과대학교 산학협력단
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Priority to KR1020110100763A priority Critical patent/KR101407209B1/ko
Application filed by 포항공과대학교 산학협력단 filed Critical 포항공과대학교 산학협력단
Priority to US13/877,875 priority patent/US8852979B2/en
Priority to CN201180059051.6A priority patent/CN103261088B/zh
Priority to JP2013532729A priority patent/JP2014503982A/ja
Priority to DE112011103397T priority patent/DE112011103397T5/de
Publication of WO2012047042A2 publication Critical patent/WO2012047042A2/ko
Publication of WO2012047042A3 publication Critical patent/WO2012047042A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Electromagnetism (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

본 발명의 일 측면에 따라 미세 패턴 형성 방법이 제공된다. 상기 미세 패턴 형성 방법은 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계; 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성된 상기 기판의 전면(全面) 위에 물질층을 형성하는 단계; 및 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성되지 않은 부분의 상기 물질층만 남도록 상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 제거하는 단계; 를 포함한다.
PCT/KR2011/007413 2010-10-07 2011-10-06 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 WO2012047042A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020110100763A KR101407209B1 (ko) 2010-10-07 2011-10-04 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법
US13/877,875 US8852979B2 (en) 2010-10-07 2011-10-06 Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same
CN201180059051.6A CN103261088B (zh) 2010-10-07 2011-10-06 微图案形成方法和使用其的微通道晶体管和微通道发光晶体管的形成方法
JP2013532729A JP2014503982A (ja) 2010-10-07 2011-10-06 微細パターン形成方法、並びにそれを利用した微細チャネルトランジスタ及び微細チャネル発光トランジスタの形成方法
DE112011103397T DE112011103397T5 (de) 2010-10-07 2011-10-06 Verfahren zur Bildung einer Mikrostruktur und Verfahren zur Bildung eines Mikrokanal-Transistors und eines licht-emittierenden Mikrokanal-Transistors unter Verwendung desselben

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0097996 2010-10-07
KR20100097996 2010-10-07
KR10-2011-0100763 2011-10-04
KR1020110100763A KR101407209B1 (ko) 2010-10-07 2011-10-04 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법

Publications (2)

Publication Number Publication Date
WO2012047042A2 WO2012047042A2 (ko) 2012-04-12
WO2012047042A3 true WO2012047042A3 (ko) 2012-06-21

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PCT/KR2011/007413 WO2012047042A2 (ko) 2010-10-07 2011-10-06 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법

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US (1) US8852979B2 (ko)
JP (1) JP2014503982A (ko)
KR (1) KR101407209B1 (ko)
CN (1) CN103261088B (ko)
DE (1) DE112011103397T5 (ko)
WO (1) WO2012047042A2 (ko)

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