KR100975641B1 - 그래핀 나노 소자의 제조방법. - Google Patents
그래핀 나노 소자의 제조방법. Download PDFInfo
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- KR100975641B1 KR100975641B1 KR1020080076585A KR20080076585A KR100975641B1 KR 100975641 B1 KR100975641 B1 KR 100975641B1 KR 1020080076585 A KR1020080076585 A KR 1020080076585A KR 20080076585 A KR20080076585 A KR 20080076585A KR 100975641 B1 KR100975641 B1 KR 100975641B1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
Claims (24)
- 그래핀 나노 구조의 제조방법에 있어서,그래핀막 위에 산화물 나노 구조를 흡착시키는 단계;상기 그래핀막 위에 흡착된 산화물 나노 구조를 소정의 방향으로 정렬시키는 단계;상기 정렬된 산화물 나노 구조를 마스크로 사용하여, 비등방성 식각을 수행하는 단계; 및비등방성 식각 후 남은 상기 산화물 나노 구조를 제거하는 단계를 포함하는 그래핀 나노 구조의 제조방법.
- 제1항에 있어서,상기 그래핀막은 기판 위에 흡착된 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제2항에 있어서,상기 그래핀막이 흡착된 기판을 상기 산화물 나노 구조가 포함된 용액에 담그어 상기 용액 속에 포함된 상기 산화물 나노 구조를 그래핀막에 흡착하는 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제3항에 있어서,상기 산화물 나노 구조가 상기 그래핀막에 임의의 방향으로 흡착되는 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제4항에 있어서,상기 그래핀막에 흡착된 산화물 나노구조를 초순수에 담그고, 상기 산화물 나노구조가 정렬되길 원하는 방향으로 초순수의 바깥쪽으로 당겨주어 상기 산화물 나노 구조를 정렬하는 그래핀 나노 구조의 제조방법.
- 제2항에 있어서,상기 비등방성 식각은 상기 정렬된 산화물 나노 구조를 마스크로 사용하여 수행하는 이온 빔 식각인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 산화물 나노 구조는 바나듐 옥사이드 나노선인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 그래핀 나노 구조의 제조방법에 있어서,그래핀막 위에 금속 층을 형성하는 단계;상기 금속 층 위의 제1 영역에 소수성 분자막을 가지는 분자막 패턴을 형성 하는 단계;상기 소수성 분자막이 형성되지 않은 상기 금속 층 위의 제2 영역에 산화물 나노 구조를 정렬시키는 단계;상기 정렬된 산화물 나노 구조를 마스크로 사용하여, 비등방성 식각을 수행하는 단계; 및상기 비등방성 식각 후 남은 상기 산화물 나노 구조와 금속층 나노 구조를 제거하는 단계를 포함하는 그래핀 나노 구조의 제조방법.
- 제8항에 있어서,상기 그래핀막은 기판 위에 흡착된 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제9항에 있어서,상기 산화물 나노 구조를 버퍼용액을 이용하여 제거한 후, 상기 금속층 나노 구조를 금속 부식액으로 제거하는 그래핀 나노 구조의 제조방법.
- 제9항에 있어서,상기 금속층 위의 제2 영역에 친수성 분자막이 형성된 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제11항에 있어서,상기 금속층은 금(Au)으로 이루어진 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제12항에 있어서,상기 소수성 분자막은 ODT인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제12항에 있어서,상기 친수성 분자막은 시스티아민인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제9항에 있어서,상기 비등방성 식각은 상기 정렬된 산화물 나노 구조를 마스크로 사용하여 수행하는 이온 빔 식각인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제8항 내지 제15항 중 어느 한 항에 있어서,상기 산화물 나노구조는 바나듐 옥사이드 나노선인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 그래핀 나노 구조의 제조방법에 있어서,그래핀막 위에 희생층을 형성하는 단계;상기 희생층 위에 금속 층을 형성하는 단계;상기 금속 층 위의 제1 영역에 소수성 분자막을 가지는 분자막 패턴을 형성하는 단계;상기 소수성 분자막이 형성되지 않은 상기 금속 층 위의 제2 영역에 산화물 나노 구조를 정렬시키는 단계;상기 정렬된 산화물 나노 구조를 마스크로 사용하여, 비등방성 식각을 수행하는 단계; 및상기 비등방성 식각 후 남은 상기 산화물 나노 구조, 상기 금속층 나노 구조 및 상기 희생층 나노 구조를 제거하는 단계를 포함하는 그래핀 나노 구조의 제조방법.
- 제17항에 있어서,상기 그래핀막은 기판 위에 흡착된 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제18항에 있어서,상기 산화물 나노 구조를 버퍼용액을 이용하여 제거한 후, 상기 희생층 나노 구조를 제거하는 그래핀 나노 구조의 제조방법.
- 제19항에 있어서,상기 금속층은 금으로 이루어지며, 상기 희생층은 알루미늄으로 이루어진 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제20항에 있어서,상기 희생층 나노구조를 TMAH 용액을 이용하여 제거하는 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제18항에 있어서,상기 금속층 위의 제2 영역에 친수성 분자막이 형성되는 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제18항에 있어서,상기 비등방성 식각은 상기 정렬된 산화물 나노 구조를 마스크로 사용하여 수행하는 이온 빔 식각인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
- 제17항 내지 제23항 중 어느 한 항에 있어서,상기 산화물 나노구 조는 바나듐 옥사이드 나노선인 것을 특징으로 하는 그래핀 나노 구조의 제조방법.
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US12/211,006 US8343366B2 (en) | 2008-08-05 | 2008-09-15 | Fabricating a graphene nano-device |
CN2008101827675A CN101643199B (zh) | 2008-08-05 | 2008-12-04 | 石墨烯纳米器件的制造 |
DE102008060644A DE102008060644B4 (de) | 2008-08-05 | 2008-12-05 | Verfahren zur Herstellung einer Graphennanostruktur |
JP2008310488A JP4825863B2 (ja) | 2008-08-05 | 2008-12-05 | グラフェンナノデバイスの製造 |
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JP (1) | JP4825863B2 (ko) |
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US8343366B2 (en) | 2013-01-01 |
CN101643199B (zh) | 2012-12-19 |
KR20100016929A (ko) | 2010-02-16 |
DE102008060644A1 (de) | 2010-04-15 |
CN101643199A (zh) | 2010-02-10 |
JP2010041023A (ja) | 2010-02-18 |
DE102008060644B4 (de) | 2011-09-15 |
US20100032409A1 (en) | 2010-02-11 |
JP4825863B2 (ja) | 2011-11-30 |
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