JP4964406B2 - 自己組織化単分子膜の縁部を用いた狭小形状の形成 - Google Patents
自己組織化単分子膜の縁部を用いた狭小形状の形成 Download PDFInfo
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- 239000013545 self-assembled monolayer Substances 0.000 title claims description 85
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- 150000003573 thiols Chemical class 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 1
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- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
Orlov O.A.et al.、Science 277:926−30(1997) M.L.Steigerwald et al.、Ann.Rev.Mat.Sci 19:471−495(1989) 「Dielectric Properties of Polyelectrolyte Multilayers」、Durstock M.F.およびRubner M.F.Langmuir、17:7865−72(2001)
第1または第2の上述の諸工程を行った後、必要であれば、第2のSAM245は、前述したRIE手順など、SAMエッチャントに曝露することにより除去してよい。
本発明を詳細に説明したが、本発明の範囲から逸脱することなく様々な変更、置換および改変が可能であることを当業者は理解されたい。
Claims (11)
- パターン化層(115)がその縁部(125)に隣接して配置された目標領域(120)を形成するように、基層(105)の部分の上に前記パターン化層(115)を形成する工程と、
自己組織化単分子膜(SAM)(107)を前記パターン化層と並べて、ただし前記パターン化層(115)は除いて前記基層(105)に対して化学的に結合させる工程であって、前記自己組織化単分子膜(SAM)(107)は前記目標領域(120)内で未組織性領域を含む工程と、
前記目標領域(120)内の前記基層(105)をエッチングする工程と
を含む、基層に溝部を作製する方法。 - エッチング工程はさらに、前記縁部(125)に配置された前記自己組織化単分子膜(SAM)(107)を介して拡散可能なエッチャントに前記基層(105)を曝露し、それによって目標領域内の前記基層(105)の部分を選択的に除去する工程を含む、請求項1に記載の装置。
- 前記目標領域から前記基層(105)の前記部分を除去した後、前記パターン化層(115)を除去する工程をさらに含む、請求項2に記載の方法。
- 前記目標領域から前記基層の前記部分を除去した後、前記自己組織化単分子膜(SAM)(107)を除去する工程をさらに含む、請求項2に記載の方法。
- 前記自己組織化単分子膜(SAM)(107)は、前記基層(105)に対して有機分子を化学的に結合させることが可能な官能基を有する1つまたは複数の前記有機分子を含む、請求項1に記載の方法。
- 基礎基板(210)上に配置された配線を作製する方法であって、前記方法は、
パターン化層(215)がその縁部に隣接して配置された目標領域(220)を形成するように、前記基礎基板(210)の上に形成された基層(205)の部分上に前記パターン化層(215)を形成する工程と、
第1の自己組織化単分子膜(SAM)(207)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層(205)に対して化学的に結合させる工程であって、前記第1の自己組織化単分子膜(SAM)(207)は前記目標領域内で未組織性領域を含む工程と、
前記目標領域内で前記第1の自己組織化単分子膜(SAM)を第2の自己組化単分子膜(SAM)(245)と交換する工程と、
前記目標領域の外側に位置する前記基層(205)を除去する工程とを含む、方法。 - 前記目標領域(220)の外側に配置された前記基層(205)をエッチングする工程をさらに含む、請求項6に記載の方法。
- 前記基層(205)をエッチングする工程は、前記パターン化層(215)をパターン化層のエッチャントに曝露し、それにより前記パターン化層(215)を除去して、前記基層(205)の前記部分の被覆を取り除く工程を含む、請求項7に記載の方法。
- 前記除去工程は、前記基層(205)のエッチャントが前記第1のSAM(207)を介して拡散可能となるような基層エッチャントに前記基層(205)を曝露し、それにより前記第1のSAM(207)の下方の近傍にある前記基層(205)を除去する工程を含む、請求項8に記載の方法。
- 基層(205)上に配置された配線を作製する方法であって、前記方法は、
パターン化層(215)がその縁部に隣接して配置された目標領域(220)を形成するように、前記基層(205)の部分上に前記パターン化層を形成する工程と、
第1の自己組織化単分子膜(SAM)(207)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層(205)に対して化学的に結合させる工程であって、前記第1の自己組織化単分子膜(SAM)(207)は前記目標領域内で未組織性領域を含む工程と、
前記目標領域内で前記第1の自己組織化単分子膜(SAM)を第2の自己組化単分子膜(SAM)(245)と交換する工程と、
前記目標領域内での導電性金属結晶の核成長工程とを含む、方法。 - 基礎基板(310)上に絶縁層(350)を配置する工程と、前記絶縁層(350)上に基層(305)を堆積する工程と、
前記基層(305)に溝部(301)を形成する工程であって、
パターン化層がその縁部に隣接して配置された目標領域を形成するように、前記基層(305)の部分の上に前記パターン化層を形成する工程と、
自己組織化単分子膜(SAM)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層に対して化学的に結合させ、前記SAMは前記目標領域内で未組織性領域を含む工程、および、
前記目標領域内の前記基層(305)をエッチングして前記絶縁層を露出させ、それによりソースおよびドレイン(355,360)を形成する工程
を含む工程と、
前記溝部内にゲート誘電体(370)を形成する工程と、
前記パターン化層を除去する工程と、
前記ゲート誘電体(370)ならびに前記ソースおよびドレイン(355,360)上に半導体構造(375)を形成する工程と
を含む、電界効果トランジスタを作製する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/442,774 US20110294296A1 (en) | 2003-05-21 | 2003-05-21 | Using edges of self-assembled monolayers to form narrow features |
US10/442774 | 2003-05-21 |
Publications (2)
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JP2005033184A JP2005033184A (ja) | 2005-02-03 |
JP4964406B2 true JP4964406B2 (ja) | 2012-06-27 |
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Families Citing this family (9)
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JP4550389B2 (ja) * | 2003-09-12 | 2010-09-22 | 株式会社日立製作所 | 半導体装置 |
WO2006101028A1 (ja) | 2005-03-23 | 2006-09-28 | Tokyo Institute Of Technology | 単分子導電性錯体、導電性自己組織化膜、及びこれを用いた金属と半導体からなる電極の接合体 |
JP2006269905A (ja) * | 2005-03-25 | 2006-10-05 | Nara Institute Of Science & Technology | タンパク超分子のパターニング方法 |
JP4611944B2 (ja) * | 2006-07-28 | 2011-01-12 | 日立マクセル株式会社 | 溝形成方法 |
US7767099B2 (en) | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
DE102007043360A1 (de) * | 2007-09-12 | 2009-03-19 | Forschungszentrum Karlsruhe Gmbh | Elektronisches Bauelement, Verfahren zu seiner Herstellung und seine Verwendung |
JP5186865B2 (ja) * | 2007-10-01 | 2013-04-24 | 住友化学株式会社 | 有機トランジスタ絶縁膜用組成物 |
WO2014097829A1 (ja) | 2012-12-17 | 2014-06-26 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
US9331094B2 (en) * | 2014-04-30 | 2016-05-03 | Sandisk Technologies Inc. | Method of selective filling of memory openings |
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2003
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