JP2005033184A - 自己組織化単分子膜の縁部を用いた狭小形状の形成 - Google Patents
自己組織化単分子膜の縁部を用いた狭小形状の形成 Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 187
- 239000013545 self-assembled monolayer Substances 0.000 claims description 68
- 239000002094 self assembled monolayer Substances 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 230000005669 field effect Effects 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000010931 gold Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920000867 polyelectrolyte Polymers 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 150000001335 aliphatic alkanes Chemical group 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- -1 silver and gold Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000276 potassium ferrocyanide Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005076 polymer ester Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
【解決手段】溝部を形成するために、パターン化層がその縁部に隣接して配置された目標領域を形成するように、基層の部分の上に該パターン化層が形成される。自己組織化単分子膜(SAM)が、パターン化層と並べて、ただしパターン化層は除いて前記基層に対して化学的に結合される。基層は目標領域内で除去される。配線は、第1のSAMが目標領域内で第2のSAMと交換されることを除き同様な方法により、形成される。次いで、目標領域の外側の基層が除去されるか、もしくは、導電性金属結晶が目標領域内で成長される。このような構造は、電界効果トランジスタなど多くの能動または受動電子デバイスの製造で有利に使用できる。
【選択図】図1C
Description
Orlov O.A.et al.、Science 277:926−30(1997) M.L.Steigerwald et al.、Ann.Rev.Mat.Sci 19:471−495(1989) 「Dielectric Properties of Polyelectrolyte Multilayers」、Durstock M.F.およびRubner M.F.Langmuir、17:7865−72(2001)
第1または第2の上述の諸工程を行った後、必要であれば、第2のSAM245は、前述したRIE手順など、SAMエッチャントに曝露することにより除去してよい。
本発明を詳細に説明したが、本発明の範囲から逸脱することなく様々な変更、置換および改変が可能であることを当業者は理解されたい。
Claims (10)
- パターン化層がその縁部に隣接して配置された目標領域を形成するように、基層の部分の上に前記パターン化層を形成する工程と、
自己組織化単分子膜(SAM)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層に対して化学的に結合させる工程であって、前記SAMは前記目標領域内で未組織性領域を含む工程と、
前記目標領域内の前記基層をエッチングする工程と
を含む、基層に溝部を作製する方法。 - エッチング工程はさらに、前記縁部に配置された前記SAMを介して拡散可能なエッチャントに前記基層を曝露し、それによって目標領域内の前記基層の部分を選択的に除去する工程を含む、請求項1に記載の装置。
- 前記目標領域から前記基層の前記部分を除去した後、前記パターン化層を除去する工程をさらに含む、請求項2に記載の方法。
- 前記目標領域から前記基層の前記部分を除去した後、前記SAMを除去する工程をさらに含む、請求項2に記載の方法。
- 前記SAMは、前記基層に対して有機分子を化学的に結合させることが可能な官能基を有する1つまたは複数の前記有機分子を含む、請求項1に記載の方法。
- パターン化層がその縁部に隣接して配置された目標領域を形成するように、基層の部分の上に前記パターン化層を形成する工程と、
第1の自己組織化単分子膜(SAM)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層に対して化学的に結合させる工程であって、前記SAMは前記目標領域内で未組織性領域を含む工程と、
前記目標領域内で前記第1のSAMを第2のSAMと交換する工程と
を含む、基層上に配置された配線を作製する方法。 - 前記目標領域の外側に配置された前記基層をエッチングする工程をさらに含む、請求項6に記載の方法。
- 前記基層をエッチングする工程は、前記パターン化層をパターン化層のエッチャントに曝露し、それにより前記パターン化層を除去して、前記基層の前記部分の被覆を取り除く工程を含む、請求項7に記載の方法。
- 前記除去工程は、前記基層のエッチャントが前記第1のSAMを介して拡散可能となるような基層エッチャントに前記基層を曝露し、それにより前記第1のSAMの下方の近傍にある前記基層を除去する工程を含む、請求項8に記載の方法。
- 基礎基板上に絶縁層を配置する工程と、
前記絶縁層上に基層を堆積する工程と、
前記基層に溝部を形成する工程であって、
パターン化層がその縁部に隣接して配置された目標領域を形成するように、前記基層の部分の上に前記パターン化層を形成する工程、
自己組織化単分子膜(SAM)を前記パターン化層と並べて、ただし前記パターン化層は除いて前記基層に対して化学的に結合させ、前記SAMは前記目標領域内で未組織性領域を含む工程、および、
前記目標領域内の前記基層をエッチングして前記絶縁層を露出させ、それによりソースおよびドレインを形成する工程
を含む工程と、
前記溝部内にゲート誘電体を形成する工程と、
前記パターン化層を除去する工程と、
前記ゲート誘電体ならびに前記ソースおよびドレイン上に半導体構造を形成する工程と
を含む、電界効果トランジスタを作製する方法。
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US10/442774 | 2003-05-21 | ||
US10/442,774 US20110294296A1 (en) | 2003-05-21 | 2003-05-21 | Using edges of self-assembled monolayers to form narrow features |
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JP2005033184A true JP2005033184A (ja) | 2005-02-03 |
JP4964406B2 JP4964406B2 (ja) | 2012-06-27 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093542A (ja) * | 2003-09-12 | 2005-04-07 | Hitachi Ltd | 半導体装置およびその作製方法 |
JP2006269905A (ja) * | 2005-03-25 | 2006-10-05 | Nara Institute Of Science & Technology | タンパク超分子のパターニング方法 |
JP2008034021A (ja) * | 2006-07-28 | 2008-02-14 | Hitachi Maxell Ltd | 溝形成方法 |
JP2009088316A (ja) * | 2007-10-01 | 2009-04-23 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
US7659416B2 (en) | 2005-03-23 | 2010-02-09 | Tokyo Institute Of Technology | Monomolecular conductive complex, conductive self-assembled film and assembly of electrode composed of metal and semiconductor making use of the same |
US7767099B2 (en) | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
JP2010539688A (ja) * | 2007-09-12 | 2010-12-16 | カールスルーアー・インスティトゥート・フュア・テヒノロギー | 電子素子、その作製方法およびその使用方法 |
US9147780B2 (en) | 2012-12-17 | 2015-09-29 | Kaneka Corporation | Solar cell, method for manufacturing same, and solar cell module |
Families Citing this family (1)
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US9331094B2 (en) * | 2014-04-30 | 2016-05-03 | Sandisk Technologies Inc. | Method of selective filling of memory openings |
-
2003
- 2003-05-21 US US10/442,774 patent/US20110294296A1/en not_active Abandoned
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2004
- 2004-05-21 JP JP2004151141A patent/JP4964406B2/ja not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005093542A (ja) * | 2003-09-12 | 2005-04-07 | Hitachi Ltd | 半導体装置およびその作製方法 |
JP4550389B2 (ja) * | 2003-09-12 | 2010-09-22 | 株式会社日立製作所 | 半導体装置 |
US7659416B2 (en) | 2005-03-23 | 2010-02-09 | Tokyo Institute Of Technology | Monomolecular conductive complex, conductive self-assembled film and assembly of electrode composed of metal and semiconductor making use of the same |
JP2006269905A (ja) * | 2005-03-25 | 2006-10-05 | Nara Institute Of Science & Technology | タンパク超分子のパターニング方法 |
JP2008034021A (ja) * | 2006-07-28 | 2008-02-14 | Hitachi Maxell Ltd | 溝形成方法 |
JP4611944B2 (ja) * | 2006-07-28 | 2011-01-12 | 日立マクセル株式会社 | 溝形成方法 |
US7767099B2 (en) | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
JP2010539688A (ja) * | 2007-09-12 | 2010-12-16 | カールスルーアー・インスティトゥート・フュア・テヒノロギー | 電子素子、その作製方法およびその使用方法 |
JP2009088316A (ja) * | 2007-10-01 | 2009-04-23 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
US9147780B2 (en) | 2012-12-17 | 2015-09-29 | Kaneka Corporation | Solar cell, method for manufacturing same, and solar cell module |
Also Published As
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US20110294296A1 (en) | 2011-12-01 |
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