WO2011019163A3 - 전자장치 - Google Patents

전자장치 Download PDF

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Publication number
WO2011019163A3
WO2011019163A3 PCT/KR2010/005150 KR2010005150W WO2011019163A3 WO 2011019163 A3 WO2011019163 A3 WO 2011019163A3 KR 2010005150 W KR2010005150 W KR 2010005150W WO 2011019163 A3 WO2011019163 A3 WO 2011019163A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric conversion
electronic apparatus
conversion element
semiconductor layer
photoelectric conversion
Prior art date
Application number
PCT/KR2010/005150
Other languages
English (en)
French (fr)
Other versions
WO2011019163A2 (ko
Inventor
아베마사유키
Original Assignee
(주)아이뷰테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아이뷰테크 filed Critical (주)아이뷰테크
Priority to CN201080035934.9A priority Critical patent/CN102511087B/zh
Priority to US13/389,776 priority patent/US8872302B2/en
Priority to SG2012006664A priority patent/SG178181A1/en
Priority to DE112010002834.6T priority patent/DE112010002834B4/de
Priority to RU2012108191/28A priority patent/RU2515214C2/ru
Publication of WO2011019163A2 publication Critical patent/WO2011019163A2/ko
Publication of WO2011019163A3 publication Critical patent/WO2011019163A3/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0215—Compact construction
    • G01J5/022—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

열전변환소자와, 광전변환소자와 트랜지스터 또는 다이오드 중 적어도 한쪽을 모놀리식으로 집적화할 수 있으며, 또는 p형 열전변환부와 n형 열전변환부의 간섭을 억제할 수 있다. 본 발명은 열전변환을 행하는 반도체층(38)을 포함하는 열전변환소자(100)와, 상기 반도체층(38) 중 적어도 일부의 층이 광전변환을 행하는 광전변환소자(102)와 상기 반도체층(38) 중 적어도 일부의 층을 동작층으로 하는 트랜지스터(104) 또는 다이오드 중 적어도 한쪽을 구비하는 전자장치이다.
PCT/KR2010/005150 2009-08-11 2010-08-05 전자장치 WO2011019163A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201080035934.9A CN102511087B (zh) 2009-08-11 2010-08-05 电子装置
US13/389,776 US8872302B2 (en) 2009-08-11 2010-08-05 Electronic apparatus
SG2012006664A SG178181A1 (en) 2009-08-11 2010-08-05 Electronic apparatus
DE112010002834.6T DE112010002834B4 (de) 2009-08-11 2010-08-05 Thermoelektrische Vorrichtungen
RU2012108191/28A RU2515214C2 (ru) 2009-08-11 2010-08-05 Электронное устройство

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-186884 2009-08-11
JP2009186884A JP4516625B1 (ja) 2009-08-11 2009-08-11 電子装置

Publications (2)

Publication Number Publication Date
WO2011019163A2 WO2011019163A2 (ko) 2011-02-17
WO2011019163A3 true WO2011019163A3 (ko) 2011-07-21

Family

ID=42709006

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005150 WO2011019163A2 (ko) 2009-08-11 2010-08-05 전자장치

Country Status (8)

Country Link
US (1) US8872302B2 (ko)
JP (1) JP4516625B1 (ko)
KR (1) KR100992585B1 (ko)
CN (1) CN102511087B (ko)
DE (1) DE112010002834B4 (ko)
RU (1) RU2515214C2 (ko)
SG (1) SG178181A1 (ko)
WO (1) WO2011019163A2 (ko)

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US8464129B2 (en) * 2008-08-15 2013-06-11 Lsi Corporation ROM list-decoding of near codewords
CN102077173B (zh) 2009-04-21 2015-06-24 艾格瑞系统有限责任公司 利用写入验证减轻代码的误码平层
US8464142B2 (en) 2010-04-23 2013-06-11 Lsi Corporation Error-correction decoder employing extrinsic message averaging
US8499226B2 (en) 2010-06-29 2013-07-30 Lsi Corporation Multi-mode layered decoding
US8504900B2 (en) 2010-07-02 2013-08-06 Lsi Corporation On-line discovery and filtering of trapping sets
US8768990B2 (en) 2011-11-11 2014-07-01 Lsi Corporation Reconfigurable cyclic shifter arrangement
WO2013105270A1 (ja) * 2012-01-13 2013-07-18 株式会社日立製作所 受光デバイスユニット、偏光イメージングデバイス、及び装置
RU2012146685A (ru) 2012-11-01 2014-05-10 ЭлЭсАй Корпорейшн База данных наборов-ловушек для декодера на основе разреженного контроля четности
US10468548B2 (en) * 2015-05-01 2019-11-05 North Carolina State University Oxide heterojunction for detection of infrared radiation
ITUA20162954A1 (it) * 2016-04-28 2017-10-28 St Microelectronics Srl Dispositivo a semiconduttore per la rilevazione di radiazione ultravioletta e infrarossa e relativo metodo di fabbricazione
US10158040B2 (en) 2016-07-08 2018-12-18 North Carolina State University Polaritonic hot electron infrared photodetector
US10741649B2 (en) 2017-05-31 2020-08-11 North Carolina State University High mobility doped metal oxide thin films and reactive physical vapor deposition methods of fabricating the same
IT201800004620A1 (it) 2018-04-17 2019-10-17 Dispositivo a semiconduttore ad elevata sensibilita' per la rilevazione di specie chimiche fluide e relativo metodo di fabbricazione
IT201800004621A1 (it) 2018-04-17 2019-10-17 Dispositivo optoelettronico ad elevata sensibilita' per la rilevazione di specie chimiche e relativo metodo di fabbricazione
CN110828649B (zh) * 2019-11-20 2023-09-05 中国科学院苏州纳米技术与纳米仿生研究所 半导体制冷结构及其于smar温漂校正领域的用途
FR3106437B1 (fr) * 2020-01-16 2023-11-24 Commissariat Energie Atomique Composant électronique de puissance intégrant un capteur thermoélectrique
FR3106406B1 (fr) * 2020-01-16 2023-06-23 Commissariat Energie Atomique Capteur thermoélectrique à gaz d’électrons
JP7435972B2 (ja) * 2020-02-06 2024-02-21 三菱マテリアル株式会社 熱流スイッチング素子

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Also Published As

Publication number Publication date
RU2515214C2 (ru) 2014-05-10
SG178181A1 (en) 2012-03-29
DE112010002834T5 (de) 2012-12-06
JP2011040585A (ja) 2011-02-24
DE112010002834B4 (de) 2018-07-19
US20120139074A1 (en) 2012-06-07
KR100992585B1 (ko) 2010-11-08
CN102511087B (zh) 2016-06-08
JP4516625B1 (ja) 2010-08-04
US8872302B2 (en) 2014-10-28
RU2012108191A (ru) 2013-09-20
WO2011019163A2 (ko) 2011-02-17
CN102511087A (zh) 2012-06-20

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