WO2014079939A3 - Optoelektronisches halbleiterbauteil - Google Patents

Optoelektronisches halbleiterbauteil Download PDF

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Publication number
WO2014079939A3
WO2014079939A3 PCT/EP2013/074400 EP2013074400W WO2014079939A3 WO 2014079939 A3 WO2014079939 A3 WO 2014079939A3 EP 2013074400 W EP2013074400 W EP 2013074400W WO 2014079939 A3 WO2014079939 A3 WO 2014079939A3
Authority
WO
WIPO (PCT)
Prior art keywords
functional region
semiconductor component
optoelectronic semiconductor
radiation
contributing
Prior art date
Application number
PCT/EP2013/074400
Other languages
English (en)
French (fr)
Other versions
WO2014079939A2 (de
Inventor
Stefan GRÖTSCH
Matthias Kiessling
Michael Wittmann
Stefan Gruber
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112013005569.4T priority Critical patent/DE112013005569B4/de
Priority to CN201380060951.1A priority patent/CN104798441B/zh
Priority to KR1020157016156A priority patent/KR102137601B1/ko
Priority to JP2015543430A priority patent/JP6250060B2/ja
Priority to US14/443,989 priority patent/US9871075B2/en
Publication of WO2014079939A2 publication Critical patent/WO2014079939A2/de
Publication of WO2014079939A3 publication Critical patent/WO2014079939A3/de
Priority to US15/825,003 priority patent/US9997559B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/32—Pulse-control circuits
    • H05B45/325—Pulse-width modulation [PWM]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/395—Linear regulators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • H05B45/48—Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H05B45/3725—Switched mode power supply [SMPS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Ein optoelektronisches Halbleiterbauteil umfasst einen ersten Funktionsbereich (1) mit einer aktiven Zone, die zur Strahlungserzeugung oder zum Strahlungsempfang vorgesehen ist, sowie einen zweiten Funktionsbereich (3), der geeignet ist zur Ansteuerung des ersten Funktionsbereichs (1) beizutragen, wobei der erste Funktionsbereich (1) und der zweite Funktionsbereich (2) auf demselben Trägersubstrat (3) integriert sind.
PCT/EP2013/074400 2012-11-21 2013-11-21 Optoelektronisches halbleiterbauteil WO2014079939A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE112013005569.4T DE112013005569B4 (de) 2012-11-21 2013-11-21 Optoelektronisches Halbleiterbauteil
CN201380060951.1A CN104798441B (zh) 2012-11-21 2013-11-21 光电子半导体组件
KR1020157016156A KR102137601B1 (ko) 2012-11-21 2013-11-21 광전 반도체 소자
JP2015543430A JP6250060B2 (ja) 2012-11-21 2013-11-21 光電半導体部品を含むアレイ
US14/443,989 US9871075B2 (en) 2012-11-21 2013-11-21 Optoelectronic semiconductor component
US15/825,003 US9997559B2 (en) 2012-11-21 2017-11-28 Optoelectronic semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012111247.9 2012-11-21
DE102012111247.9A DE102012111247A1 (de) 2012-11-21 2012-11-21 Optoelektronisches Halbleiterbauteil

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/443,989 A-371-Of-International US9871075B2 (en) 2012-11-21 2013-11-21 Optoelectronic semiconductor component
US15/825,003 Continuation US9997559B2 (en) 2012-11-21 2017-11-28 Optoelectronic semiconductor component

Publications (2)

Publication Number Publication Date
WO2014079939A2 WO2014079939A2 (de) 2014-05-30
WO2014079939A3 true WO2014079939A3 (de) 2014-08-28

Family

ID=49724543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/074400 WO2014079939A2 (de) 2012-11-21 2013-11-21 Optoelektronisches halbleiterbauteil

Country Status (6)

Country Link
US (2) US9871075B2 (de)
JP (1) JP6250060B2 (de)
KR (1) KR102137601B1 (de)
CN (1) CN104798441B (de)
DE (2) DE102012111247A1 (de)
WO (1) WO2014079939A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102007405B1 (ko) * 2013-01-04 2019-08-05 엘지이노텍 주식회사 발광 모듈
US9185762B2 (en) 2013-04-19 2015-11-10 Infineon Technologies Ag Time of flight illumination circuit
DE102013114691A1 (de) 2013-12-20 2015-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und adaptiver Scheinwerfer für ein Kraftfahrzeug
DE102014105734A1 (de) 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
TWI556478B (zh) 2014-06-30 2016-11-01 億光電子工業股份有限公司 發光二極體裝置
DE102014112175B4 (de) * 2014-08-26 2018-01-25 Osram Oled Gmbh Verfahren zum Erkennen eines Kurzschlusses bei einer optoelektronischen Baugruppe und optoelektronische Baugruppe mit Kurzschlusserkennung
US11727857B2 (en) * 2019-03-29 2023-08-15 Creeled, Inc. Active control of light emitting diodes and light emitting diode displays
US11694601B2 (en) 2019-03-29 2023-07-04 Creeled, Inc. Active control of light emitting diodes and light emitting diode displays
US11776460B2 (en) 2019-03-29 2023-10-03 Creeled, Inc. Active control of light emitting diodes and light emitting diode displays
US11790831B2 (en) 2019-03-29 2023-10-17 Creeled, Inc. Active control of light emitting diodes and light emitting diode displays
US11695102B2 (en) 2020-06-19 2023-07-04 Creeled, Inc. Active electrical elements with light-emitting diodes
US12014673B2 (en) 2022-02-07 2024-06-18 Creeled, Inc. Light-emitting diodes with mixed clock domain signaling
US12014677B1 (en) 2023-04-10 2024-06-18 Creeled, Inc. Light-emitting diode packages with transformation and shifting of pulse width modulation signals and related methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263483A (ja) * 1984-06-12 1985-12-26 Sanyo Electric Co Ltd 発光ダイオ−ド配列体
DE10221504A1 (de) * 2001-05-15 2002-11-28 Lumileds Lighting Us Mehrchip-LED-Halbleiteranordnung
US20080258695A1 (en) * 2007-04-19 2008-10-23 Luminus Devices, Inc. Switching device integrated with light emitting device
EP2378555A2 (de) * 2010-04-13 2011-10-19 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung und Gehäuse für lichtemittierende Vorrichtung

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284653A (ja) 2000-03-29 2001-10-12 Kyocera Corp 発光素子アレイ
US6633322B2 (en) * 2000-05-29 2003-10-14 Kyocera Corporation Light emitting element array, optical printer head using the same, and method for driving optical printer head
JP4534052B2 (ja) * 2003-08-27 2010-09-01 奇美電子股▲ふん▼有限公司 有機ｅｌ基板の検査方法
JP2006165471A (ja) * 2004-12-10 2006-06-22 Hitachi Maxell Ltd 発光素子駆動装置
US7646367B2 (en) * 2005-01-21 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic apparatus
JP2008034629A (ja) * 2006-07-28 2008-02-14 Ado System Kk Ｌｅｄ駆動装置
JP4967548B2 (ja) 2006-09-06 2012-07-04 株式会社ニコン 発光装置
WO2008068684A2 (en) * 2006-12-06 2008-06-12 Nxp B.V. Optical electrical system in package for led based lighting systems
DE102007015473A1 (de) 2007-03-30 2008-10-09 Osram Gesellschaft mit beschränkter Haftung LED-Bauelement
EP2143304B1 (de) 2007-04-24 2010-09-15 Philips Intellectual Property & Standards GmbH Led-string-ansteuerung mit schieberegister und pegelumsetzer
JP2009105182A (ja) * 2007-10-23 2009-05-14 Panasonic Corp 光集積化素子および光集積化素子の製造方法
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
US20110199011A1 (en) * 2009-01-09 2011-08-18 Ken Nakazawa Light-emitting diode driving circuit and planar illuminating device having same
CN101886759B (zh) * 2010-05-24 2012-07-25 晶科电子（广州）有限公司 一种使用交流电的发光器件及其制造方法
DE102012102847A1 (de) 2012-04-02 2013-10-02 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263483A (ja) * 1984-06-12 1985-12-26 Sanyo Electric Co Ltd 発光ダイオ−ド配列体
DE10221504A1 (de) * 2001-05-15 2002-11-28 Lumileds Lighting Us Mehrchip-LED-Halbleiteranordnung
US20080258695A1 (en) * 2007-04-19 2008-10-23 Luminus Devices, Inc. Switching device integrated with light emitting device
EP2378555A2 (de) * 2010-04-13 2011-10-19 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung und Gehäuse für lichtemittierende Vorrichtung

Also Published As

Publication number Publication date
US9997559B2 (en) 2018-06-12
US20180083063A1 (en) 2018-03-22
KR102137601B1 (ko) 2020-07-24
US20150319814A1 (en) 2015-11-05
JP2016503587A (ja) 2016-02-04
CN104798441A (zh) 2015-07-22
US9871075B2 (en) 2018-01-16
DE112013005569B4 (de) 2024-07-18
KR20150087339A (ko) 2015-07-29
JP6250060B2 (ja) 2017-12-20
CN104798441B (zh) 2018-01-02
DE112013005569A5 (de) 2015-09-03
WO2014079939A2 (de) 2014-05-30
DE102012111247A1 (de) 2014-05-22

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