WO2012150132A3 - Laserlichtquelle - Google Patents

Laserlichtquelle Download PDF

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Publication number
WO2012150132A3
WO2012150132A3 PCT/EP2012/057073 EP2012057073W WO2012150132A3 WO 2012150132 A3 WO2012150132 A3 WO 2012150132A3 EP 2012057073 W EP2012057073 W EP 2012057073W WO 2012150132 A3 WO2012150132 A3 WO 2012150132A3
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WO
WIPO (PCT)
Prior art keywords
ridge
laser light
functional layers
light source
layer sequence
Prior art date
Application number
PCT/EP2012/057073
Other languages
English (en)
French (fr)
Other versions
WO2012150132A2 (de
Inventor
Christoph Eichler
Dimitri Dini
Alfred Lell
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to CN201280021698.4A priority Critical patent/CN103518298B/zh
Priority to KR1020137023335A priority patent/KR101532982B1/ko
Priority to US14/006,472 priority patent/US9048631B2/en
Publication of WO2012150132A2 publication Critical patent/WO2012150132A2/de
Publication of WO2012150132A3 publication Critical patent/WO2012150132A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Es wird eine Laserlichtquelle mit einer Stegwellenleiterstruktur angegeben, die eine Halbleiterschichtenfolge (10) mit einer Mehrzahl von funktionalen Schichten (4) und einem aktiven Bereich (45) aufweist, der geeignet ist, im Betrieb Laserlicht zu erzeugen, wobei zumindest eine der funktionalen Schichten (4) als Steg (11) der Stegwellenleiterstruktur ausgebildet ist und wobei die Halbleiterschichtenfolge (10) eine Modenfilterstruktur (6) aufweist, die als Teil des Stegs (11) und/oder entlang einer Haupterstreckungsebene der funktionalen Schichten (4) neben dem Steg (11) und/oder senkrecht zu einer Haupterstreckungsebene der funktionalen Schichten (4) unterhalb des Stegs (11) ausgebildet ist.
PCT/EP2012/057073 2011-05-02 2012-04-18 Laserlichtquelle WO2012150132A2 (de)

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DE102011100175A1 (de) 2012-11-08
KR20130121974A (ko) 2013-11-06
DE102011100175B4 (de) 2021-12-23
US20140064311A1 (en) 2014-03-06
CN106099640B (zh) 2021-09-10
CN103518298B (zh) 2016-08-17
US9048631B2 (en) 2015-06-02
CN106099640A (zh) 2016-11-09
WO2012150132A2 (de) 2012-11-08
CN103518298A (zh) 2014-01-15
KR101532982B1 (ko) 2015-07-01

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