WO2012150132A3 - Laserlichtquelle - Google Patents

Laserlichtquelle Download PDF

Info

Publication number
WO2012150132A3
WO2012150132A3 PCT/EP2012/057073 EP2012057073W WO2012150132A3 WO 2012150132 A3 WO2012150132 A3 WO 2012150132A3 EP 2012057073 W EP2012057073 W EP 2012057073W WO 2012150132 A3 WO2012150132 A3 WO 2012150132A3
Authority
WO
WIPO (PCT)
Prior art keywords
ridge
laser light
functional layers
light source
layer sequence
Prior art date
Application number
PCT/EP2012/057073
Other languages
English (en)
French (fr)
Other versions
WO2012150132A2 (de
Inventor
Christoph Eichler
Dimitri Dini
Alfred Lell
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US14/006,472 priority Critical patent/US9048631B2/en
Priority to CN201280021698.4A priority patent/CN103518298B/zh
Priority to KR1020137023335A priority patent/KR101532982B1/ko
Publication of WO2012150132A2 publication Critical patent/WO2012150132A2/de
Publication of WO2012150132A3 publication Critical patent/WO2012150132A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2215—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides using native oxidation of semiconductor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Es wird eine Laserlichtquelle mit einer Stegwellenleiterstruktur angegeben, die eine Halbleiterschichtenfolge (10) mit einer Mehrzahl von funktionalen Schichten (4) und einem aktiven Bereich (45) aufweist, der geeignet ist, im Betrieb Laserlicht zu erzeugen, wobei zumindest eine der funktionalen Schichten (4) als Steg (11) der Stegwellenleiterstruktur ausgebildet ist und wobei die Halbleiterschichtenfolge (10) eine Modenfilterstruktur (6) aufweist, die als Teil des Stegs (11) und/oder entlang einer Haupterstreckungsebene der funktionalen Schichten (4) neben dem Steg (11) und/oder senkrecht zu einer Haupterstreckungsebene der funktionalen Schichten (4) unterhalb des Stegs (11) ausgebildet ist.
PCT/EP2012/057073 2011-05-02 2012-04-18 Laserlichtquelle WO2012150132A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/006,472 US9048631B2 (en) 2011-05-02 2012-04-18 Laser light source
CN201280021698.4A CN103518298B (zh) 2011-05-02 2012-04-18 激光光源
KR1020137023335A KR101532982B1 (ko) 2011-05-02 2012-04-18 레이저 광원

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011100175.5A DE102011100175B4 (de) 2011-05-02 2011-05-02 Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102011100175.5 2011-05-02

Publications (2)

Publication Number Publication Date
WO2012150132A2 WO2012150132A2 (de) 2012-11-08
WO2012150132A3 true WO2012150132A3 (de) 2013-03-07

Family

ID=46001216

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/057073 WO2012150132A2 (de) 2011-05-02 2012-04-18 Laserlichtquelle

Country Status (5)

Country Link
US (1) US9048631B2 (de)
KR (1) KR101532982B1 (de)
CN (2) CN106099640B (de)
DE (1) DE102011100175B4 (de)
WO (1) WO2012150132A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102012111512B4 (de) 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
JP6098175B2 (ja) * 2013-01-15 2017-03-22 日亜化学工業株式会社 半導体レーザ素子
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur
JP6520527B2 (ja) * 2015-07-29 2019-05-29 日亜化学工業株式会社 半導体レーザ素子の製造方法
WO2017122782A1 (ja) * 2016-01-13 2017-07-20 古河電気工業株式会社 半導体レーザ素子、チップオンサブマウント、および半導体レーザモジュール
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102016111442A1 (de) 2016-06-22 2017-12-28 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle
JPWO2018003335A1 (ja) * 2016-06-30 2019-04-25 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム
DE102016113071A1 (de) 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102016120685A1 (de) 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers und Halbleiterlaser
EP3533117B1 (de) * 2016-10-28 2023-09-13 NLIGHT, Inc. Verfahren, system und vorrichtung zur unterdrückung von moden höherer ordnung
JP6299839B2 (ja) * 2016-11-02 2018-03-28 富士通株式会社 光素子及び光モジュール
DE102018125496A1 (de) 2018-10-15 2020-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser und Herstellungsverfahren für Halbleiterlaser
US11061186B2 (en) * 2018-11-26 2021-07-13 Globalfoundries U.S. Inc. Waveguide structures
DE102018131579A1 (de) * 2018-12-10 2020-06-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
JP6960480B2 (ja) * 2019-02-05 2021-11-05 シャープ株式会社 半導体レーザ素子
JP7340974B2 (ja) * 2019-07-18 2023-09-08 パナソニックホールディングス株式会社 窒化物半導体レーザ素子
DE112020003385T5 (de) * 2019-08-13 2022-03-31 Nlight, Inc. Verfahren, System und Vorrichtung zur Unterdrückung von Moden höherer Ordnung
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
CN114552384A (zh) * 2020-11-27 2022-05-27 山东华光光电子股份有限公司 一种通过改变局部侧向折射率来实现基模激射的半导体激光器及其制备方法
JPWO2022172680A1 (de) * 2021-02-10 2022-08-18
WO2022172679A1 (ja) * 2021-02-10 2022-08-18 パナソニックホールディングス株式会社 半導体レーザ素子
CN116417907B (zh) * 2023-06-09 2023-08-15 深圳市星汉激光科技股份有限公司 一种具有耗尽型电流非注入层的激光芯片及其制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001078206A1 (en) * 2000-04-11 2001-10-18 The Board Of Trustees Of The University Of Illinois Flared and tapered rib waveguide semiconductor laser and method for making same
US6445723B1 (en) * 1998-05-18 2002-09-03 Jds Uniphase Corporation Laser source with submicron aperture
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
US20040125846A1 (en) * 2000-04-11 2004-07-01 Nuvonyx, Inc. Tailored index single mode optical amplifiers and devices and systems including same
US20050139856A1 (en) * 2003-11-10 2005-06-30 Tomonori Hino Semiconductor light-emitting device and method of manufacturing the same
US20060011946A1 (en) * 2002-03-01 2006-01-19 Tadao Toda Nitride semiconductor laser element
US20060193353A1 (en) * 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
US20080089374A1 (en) * 2006-09-29 2008-04-17 Osram Opto Semiconductors Gmbh Semiconductor laser
US20090129418A1 (en) * 2000-06-08 2009-05-21 Nichia Corporation Semiconductor laser device and method of manufacturing the same
DE102008013896A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Laserlichtquelle

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070510A (en) 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
GB9709949D0 (en) * 1997-05-17 1997-07-09 Dowd Philip Vertical-cavity surface-emitting laser polarisation control
DE19963807A1 (de) 1999-12-30 2001-07-19 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
US7167489B2 (en) * 2001-09-21 2007-01-23 Sharp Kabushiki Kaisha GaN-based semiconductor laser device
US20040004217A1 (en) 2002-03-06 2004-01-08 Vijaysekhar Jayaraman Semiconductor opto-electronic devices with wafer bonded gratings
EP1826397A3 (de) 2002-05-03 2009-08-05 Delphi Technologies, Inc. Kraftstoffeinspritzsystem
JP3891108B2 (ja) 2002-12-06 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4599836B2 (ja) 2003-12-22 2010-12-15 ソニー株式会社 半導体レーザ素子
US7466736B2 (en) 2004-08-13 2008-12-16 Nec Corporation Semiconductor laser diode, semiconductor optical amplifier, and optical communication device
JP2006086228A (ja) 2004-09-14 2006-03-30 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
WO2008025076A1 (en) * 2006-08-29 2008-03-06 Macquarie University An optical amplifier, a laser and methods of manufacture thereof
DE102007063957B3 (de) 2007-09-28 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierender Halbleiterchip
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
JP2009212336A (ja) * 2008-03-05 2009-09-17 Mitsubishi Electric Corp 窒化物系半導体レーザの製造方法および窒化物系半導体レーザ
JP5365063B2 (ja) * 2008-05-07 2013-12-11 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
DE102008058435B4 (de) * 2008-11-21 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Kantenemittierender Halbleiterlaser
JP2010267871A (ja) * 2009-05-15 2010-11-25 Sony Corp 半導体レーザおよびその製造方法
CN101710670A (zh) 2009-05-15 2010-05-19 长春理工大学 带有限制光反馈结构分别驱动的发射波长为808nm锥形半导体激光器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445723B1 (en) * 1998-05-18 2002-09-03 Jds Uniphase Corporation Laser source with submicron aperture
WO2001078206A1 (en) * 2000-04-11 2001-10-18 The Board Of Trustees Of The University Of Illinois Flared and tapered rib waveguide semiconductor laser and method for making same
US20040125846A1 (en) * 2000-04-11 2004-07-01 Nuvonyx, Inc. Tailored index single mode optical amplifiers and devices and systems including same
US20090129418A1 (en) * 2000-06-08 2009-05-21 Nichia Corporation Semiconductor laser device and method of manufacturing the same
US20060011946A1 (en) * 2002-03-01 2006-01-19 Tadao Toda Nitride semiconductor laser element
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
US20050139856A1 (en) * 2003-11-10 2005-06-30 Tomonori Hino Semiconductor light-emitting device and method of manufacturing the same
US20060193353A1 (en) * 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
US20080089374A1 (en) * 2006-09-29 2008-04-17 Osram Opto Semiconductors Gmbh Semiconductor laser
DE102008013896A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Laserlichtquelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MESEL DE K ET AL: "First demonstration of 980 nm oxide confined laser with integrated spot size converter", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 12, 8 June 2000 (2000-06-08), pages 1028 - 1029, XP006015338, ISSN: 0013-5194, DOI: 10.1049/EL:20000781 *

Also Published As

Publication number Publication date
CN103518298B (zh) 2016-08-17
US20140064311A1 (en) 2014-03-06
DE102011100175B4 (de) 2021-12-23
CN103518298A (zh) 2014-01-15
CN106099640B (zh) 2021-09-10
DE102011100175A1 (de) 2012-11-08
KR101532982B1 (ko) 2015-07-01
CN106099640A (zh) 2016-11-09
KR20130121974A (ko) 2013-11-06
WO2012150132A2 (de) 2012-11-08
US9048631B2 (en) 2015-06-02

Similar Documents

Publication Publication Date Title
WO2012150132A3 (de) Laserlichtquelle
GB201314802D0 (en) A hybrid III - V Silicon Laser Formed by direct Bonding
WO2013111542A9 (ja) 窒化物半導体発光装置
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2012075384A3 (en) Illumination assembly and method of forming same
WO2012102501A3 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
EA201690210A1 (ru) Структура сборки стекла и способ сборки стекла, использующий эту структуру
WO2014167455A3 (en) Top emitting semiconductor light emitting device
WO2012039754A3 (en) Light emitting and lasing semiconductor methods and devices
EP2701183A4 (de) Struktur zum züchten einer nitrid-halbleiterschicht, stapelstruktur, halbleiterelement auf nitridbasis, lichtquelle und herstellungsverfahren dafür
WO2014079939A3 (de) Optoelektronisches halbleiterbauteil
WO2014083507A3 (en) Semiconductor structure and method for manufacturing a semiconductor structure
WO2012138903A3 (en) Dual active layers for semiconductor devices and methods of manufacturing the same
WO2014014299A3 (ko) 반도체 발광소자
WO2013036561A3 (en) Broad -area lighting systems and methods of its fabrication
WO2014123697A3 (en) Light emitting device with wavelength conversion layer
TW201130159A (en) Light emitting device, method of manufacturing the same, light emitting device package and lighting system
GB2505802A (en) Secondary device integration into coreless microelectronic device packages
GB201114822D0 (en) Monolithically integrated tunable semiconductor laser
UA111864C2 (uk) Обідковий папір для курильного виробу
WO2014049052A3 (de) Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
WO2010011048A3 (ko) 반도체 발광소자 및 그 제조방법
GB2531452A (en) Fabrication of a microfluidic chip package or assembly with separable chips
WO2013054220A3 (en) Lighting apparatus
WO2010018946A3 (ko) 반도체 발광소자 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12717092

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 20137023335

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14006472

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 12717092

Country of ref document: EP

Kind code of ref document: A2