WO2014014299A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2014014299A3
WO2014014299A3 PCT/KR2013/006458 KR2013006458W WO2014014299A3 WO 2014014299 A3 WO2014014299 A3 WO 2014014299A3 KR 2013006458 W KR2013006458 W KR 2013006458W WO 2014014299 A3 WO2014014299 A3 WO 2014014299A3
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WIPO (PCT)
Prior art keywords
light
semiconductor
electrode
emitting element
layer
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PCT/KR2013/006458
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English (en)
French (fr)
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WO2014014299A2 (ko
Inventor
전수근
박은현
김용덕
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주식회사 세미콘라이트
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Filing date
Publication date
Priority claimed from KR1020120078270A external-priority patent/KR101363495B1/ko
Priority claimed from KR1020120083091A external-priority patent/KR101370575B1/ko
Priority claimed from KR1020130002949A external-priority patent/KR101378946B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to CN201380004181.9A priority Critical patent/CN104011887A/zh
Priority to EP13819478.2A priority patent/EP2782149B1/en
Priority to US14/118,599 priority patent/US10535798B2/en
Publication of WO2014014299A2 publication Critical patent/WO2014014299A2/ko
Publication of WO2014014299A3 publication Critical patent/WO2014014299A3/ko
Priority to US16/704,574 priority patent/US20200127161A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 개시는 복수의 반도체층에 전자와 정공 중의 하나를 공급하는 제1 전극; 복수의 반도체층에 전자와 정공 중의 나머지 하나를 공급하는 제2 전극; 성장 기판 측인 제1 반도체층 측에 구비되며, 활성층에서 생성된 제1 파장의 빛을 제2 파장의 빛으로 전환하는 형광체부; 그리고, 활성층으로부터의 빛을 성장 기판 측인 제1 반도체층 측으로 반사하도록 제2 반도체층 위에 형성되는 비도전성 반사막;으로서, 형광체부에서 전환된 빛을 기준으로 설계된 분포 브래그 리플렉터를 가지는 비도전성 반사막;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
PCT/KR2013/006458 2012-07-18 2013-07-18 반도체 발광소자 WO2014014299A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201380004181.9A CN104011887A (zh) 2012-07-18 2013-07-18 半导体发光器件
EP13819478.2A EP2782149B1 (en) 2012-07-18 2013-07-18 Semiconductor light-emitting device
US14/118,599 US10535798B2 (en) 2012-07-18 2013-07-18 Semiconductor light emitting device comprising finger electrodes
US16/704,574 US20200127161A1 (en) 2012-07-18 2019-12-05 Semiconductor light emitting device comprising finger electrodes

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2012-0078270 2012-07-18
KR1020120078270A KR101363495B1 (ko) 2012-07-18 2012-07-18 반도체 발광소자
KR10-2012-0083091 2012-07-30
KR1020120083091A KR101370575B1 (ko) 2012-07-30 2012-07-30 반도체 발광소자
KR10-2013-0002949 2013-01-10
KR1020130002949A KR101378946B1 (ko) 2013-01-10 2013-01-10 반도체 발광소자의 제조 방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/118,599 A-371-Of-International US10535798B2 (en) 2012-07-18 2013-07-18 Semiconductor light emitting device comprising finger electrodes
US16/704,574 Continuation US20200127161A1 (en) 2012-07-18 2019-12-05 Semiconductor light emitting device comprising finger electrodes

Publications (2)

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WO2014014299A2 WO2014014299A2 (ko) 2014-01-23
WO2014014299A3 true WO2014014299A3 (ko) 2014-03-13

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PCT/KR2013/006458 WO2014014299A2 (ko) 2012-07-18 2013-07-18 반도체 발광소자

Country Status (4)

Country Link
US (2) US10535798B2 (ko)
EP (1) EP2782149B1 (ko)
CN (10) CN108598230A (ko)
WO (1) WO2014014299A2 (ko)

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Publication number Publication date
US10535798B2 (en) 2020-01-14
EP2782149A2 (en) 2014-09-24
CN108598229A (zh) 2018-09-28
EP2782149B1 (en) 2022-10-19
US20200127161A1 (en) 2020-04-23
CN108598230A (zh) 2018-09-28
US20140291714A1 (en) 2014-10-02
EP2782149A4 (en) 2015-08-05
CN108807635A (zh) 2018-11-13
CN108550672A (zh) 2018-09-18
CN108365074A (zh) 2018-08-03
CN108598231A (zh) 2018-09-28
CN104011887A (zh) 2014-08-27
CN108550671A (zh) 2018-09-18
CN108493308A (zh) 2018-09-04
CN108565323A (zh) 2018-09-21
WO2014014299A2 (ko) 2014-01-23

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