WO2011099771A3 - Light emitting diode chip having distributed bragg reflector and method of fabricating the same - Google Patents

Light emitting diode chip having distributed bragg reflector and method of fabricating the same Download PDF

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Publication number
WO2011099771A3
WO2011099771A3 PCT/KR2011/000870 KR2011000870W WO2011099771A3 WO 2011099771 A3 WO2011099771 A3 WO 2011099771A3 KR 2011000870 W KR2011000870 W KR 2011000870W WO 2011099771 A3 WO2011099771 A3 WO 2011099771A3
Authority
WO
WIPO (PCT)
Prior art keywords
bragg reflector
distributed bragg
light emitting
emitting diode
diode chip
Prior art date
Application number
PCT/KR2011/000870
Other languages
French (fr)
Other versions
WO2011099771A2 (en
Inventor
Sum Geun Lee
Sang Ki Jin
Jin Cheol Shin
Jong Kyu Kim
So Ra Lee
Original Assignee
Seoul Opto Device Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100115347A external-priority patent/KR101712543B1/en
Application filed by Seoul Opto Device Co., Ltd. filed Critical Seoul Opto Device Co., Ltd.
Publication of WO2011099771A2 publication Critical patent/WO2011099771A2/en
Publication of WO2011099771A3 publication Critical patent/WO2011099771A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
PCT/KR2011/000870 2010-02-12 2011-02-09 Light emitting diode chip having distributed bragg reflector and method of fabricating the same WO2011099771A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0013166 2010-02-12
KR20100013166 2010-02-12
KR10-2010-0115347 2010-11-19
KR1020100115347A KR101712543B1 (en) 2010-02-12 2010-11-19 Light emitting diode chip having distributed bragg reflector and method of fabricating the same

Publications (2)

Publication Number Publication Date
WO2011099771A2 WO2011099771A2 (en) 2011-08-18
WO2011099771A3 true WO2011099771A3 (en) 2011-12-29

Family

ID=44368296

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/000870 WO2011099771A2 (en) 2010-02-12 2011-02-09 Light emitting diode chip having distributed bragg reflector and method of fabricating the same

Country Status (2)

Country Link
JP (1) JP5855344B2 (en)
WO (1) WO2011099771A2 (en)

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JP2013051243A (en) * 2011-08-30 2013-03-14 Kyocera Corp Optical element and optical element array
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US9705044B2 (en) 2013-02-07 2017-07-11 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
JP6201846B2 (en) * 2014-03-24 2017-09-27 豊田合成株式会社 LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
JP6827265B2 (en) * 2015-01-05 2021-02-10 シチズン電子株式会社 LED light emitting device
KR102471102B1 (en) * 2015-10-23 2022-11-25 서울바이오시스 주식회사 Light emitting diode chip having distributed bragg reflector
JP6806446B2 (en) * 2016-01-25 2021-01-06 日亜化学工業株式会社 Semiconductor devices and their manufacturing methods
KR20190022326A (en) * 2017-08-24 2019-03-06 서울바이오시스 주식회사 Light emitting diode having distributed bragg reflector
CN113169252B (en) * 2020-06-15 2023-08-01 泉州三安半导体科技有限公司 Light-emitting diode

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EP2161752B1 (en) * 2005-06-22 2015-08-12 Seoul Viosys Co., Ltd Light-emitting device
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JP5186259B2 (en) * 2008-03-26 2013-04-17 パナソニック株式会社 Semiconductor light emitting element and lighting device using the same
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3822545B2 (en) * 2002-04-12 2006-09-20 士郎 酒井 Light emitting device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
S.J. CHANG ET AL.: "Nitride-Based LEDs With a Hybrid A1 Mirror+Ti02/Si02 DBR Backside Reflector.", JOURNAL OF LIGHTWAVE TECHNOLOGY., vol. 26, no. 17, September 2008 (2008-09-01), pages 3131 - 3136 *
Y.S. ZHAO ET AL.: "Efficiency Enhancement of InGaN/GaN Light-Emitting Diodes with a Back-Surface Distributed Bragg Reflector.", JOURNAL OF ELECTRONIC MATER IALS., vol. 32, no. 12, December 2003 (2003-12-01), pages 1523 - 1526 *

Also Published As

Publication number Publication date
JP2011166146A (en) 2011-08-25
JP5855344B2 (en) 2016-02-09
WO2011099771A2 (en) 2011-08-18

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