WO2011099771A3 - Light emitting diode chip having distributed bragg reflector and method of fabricating the same - Google Patents
Light emitting diode chip having distributed bragg reflector and method of fabricating the same Download PDFInfo
- Publication number
- WO2011099771A3 WO2011099771A3 PCT/KR2011/000870 KR2011000870W WO2011099771A3 WO 2011099771 A3 WO2011099771 A3 WO 2011099771A3 KR 2011000870 W KR2011000870 W KR 2011000870W WO 2011099771 A3 WO2011099771 A3 WO 2011099771A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bragg reflector
- distributed bragg
- light emitting
- emitting diode
- diode chip
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0013166 | 2010-02-12 | ||
KR20100013166 | 2010-02-12 | ||
KR10-2010-0115347 | 2010-11-19 | ||
KR1020100115347A KR101712543B1 (en) | 2010-02-12 | 2010-11-19 | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011099771A2 WO2011099771A2 (en) | 2011-08-18 |
WO2011099771A3 true WO2011099771A3 (en) | 2011-12-29 |
Family
ID=44368296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/000870 WO2011099771A2 (en) | 2010-02-12 | 2011-02-09 | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5855344B2 (en) |
WO (1) | WO2011099771A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013051243A (en) * | 2011-08-30 | 2013-03-14 | Kyocera Corp | Optical element and optical element array |
US8624482B2 (en) | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
US9705044B2 (en) | 2013-02-07 | 2017-07-11 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
JP6201846B2 (en) * | 2014-03-24 | 2017-09-27 | 豊田合成株式会社 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
JP6827265B2 (en) * | 2015-01-05 | 2021-02-10 | シチズン電子株式会社 | LED light emitting device |
KR102471102B1 (en) * | 2015-10-23 | 2022-11-25 | 서울바이오시스 주식회사 | Light emitting diode chip having distributed bragg reflector |
JP6806446B2 (en) * | 2016-01-25 | 2021-01-06 | 日亜化学工業株式会社 | Semiconductor devices and their manufacturing methods |
KR20190022326A (en) * | 2017-08-24 | 2019-03-06 | 서울바이오시스 주식회사 | Light emitting diode having distributed bragg reflector |
CN113169252B (en) * | 2020-06-15 | 2023-08-01 | 泉州三安半导体科技有限公司 | Light-emitting diode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3822545B2 (en) * | 2002-04-12 | 2006-09-20 | 士郎 酒井 | Light emitting device |
Family Cites Families (17)
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JP3031625B2 (en) * | 1989-09-20 | 2000-04-10 | 日本真空光学株式会社 | Heat ray absorbing reflector |
JP3532752B2 (en) * | 1997-02-03 | 2004-05-31 | 株式会社東芝 | Semiconductor device separation method |
GB2351840A (en) * | 1999-06-02 | 2001-01-10 | Seiko Epson Corp | Multicolour light emitting devices. |
US8829546B2 (en) * | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
JP4063062B2 (en) * | 2002-12-03 | 2008-03-19 | コニカミノルタオプト株式会社 | Reflector |
JP2005266211A (en) * | 2004-03-18 | 2005-09-29 | Sibason Co Ltd | Multilayer film reflecting mirror |
EP2161752B1 (en) * | 2005-06-22 | 2015-08-12 | Seoul Viosys Co., Ltd | Light-emitting device |
US8049233B2 (en) * | 2006-03-10 | 2011-11-01 | Panasonic Electric Works Co., Ltd. | Light-emitting device |
JP2007273975A (en) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | Light-emitting device |
JP4655029B2 (en) * | 2006-11-20 | 2011-03-23 | パナソニック株式会社 | Light emitting device and method for manufacturing semiconductor light emitting element |
JP5032138B2 (en) * | 2007-01-26 | 2012-09-26 | 株式会社アルバック | Method for manufacturing light-emitting diode element |
TWI352438B (en) * | 2007-08-31 | 2011-11-11 | Huga Optotech Inc | Semiconductor light-emitting device |
JPWO2009057551A1 (en) * | 2007-11-02 | 2011-03-10 | コニカミノルタオプト株式会社 | Optical element |
KR100901369B1 (en) * | 2007-11-19 | 2009-06-05 | 일진반도체 주식회사 | White light emitting diode chip and manufacturing method therof |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
JP5186259B2 (en) * | 2008-03-26 | 2013-04-17 | パナソニック株式会社 | Semiconductor light emitting element and lighting device using the same |
JP4337953B2 (en) * | 2009-03-17 | 2009-09-30 | 住友電気工業株式会社 | Nitride crystal substrate, nitride crystal substrate with epi layer, and semiconductor device |
-
2011
- 2011-02-08 JP JP2011025369A patent/JP5855344B2/en active Active
- 2011-02-09 WO PCT/KR2011/000870 patent/WO2011099771A2/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3822545B2 (en) * | 2002-04-12 | 2006-09-20 | 士郎 酒井 | Light emitting device |
Non-Patent Citations (2)
Title |
---|
S.J. CHANG ET AL.: "Nitride-Based LEDs With a Hybrid A1 Mirror+Ti02/Si02 DBR Backside Reflector.", JOURNAL OF LIGHTWAVE TECHNOLOGY., vol. 26, no. 17, September 2008 (2008-09-01), pages 3131 - 3136 * |
Y.S. ZHAO ET AL.: "Efficiency Enhancement of InGaN/GaN Light-Emitting Diodes with a Back-Surface Distributed Bragg Reflector.", JOURNAL OF ELECTRONIC MATER IALS., vol. 32, no. 12, December 2003 (2003-12-01), pages 1523 - 1526 * |
Also Published As
Publication number | Publication date |
---|---|
JP2011166146A (en) | 2011-08-25 |
JP5855344B2 (en) | 2016-02-09 |
WO2011099771A2 (en) | 2011-08-18 |
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