WO2012102501A3 - 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 - Google Patents

웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 Download PDF

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Publication number
WO2012102501A3
WO2012102501A3 PCT/KR2012/000314 KR2012000314W WO2012102501A3 WO 2012102501 A3 WO2012102501 A3 WO 2012102501A3 KR 2012000314 W KR2012000314 W KR 2012000314W WO 2012102501 A3 WO2012102501 A3 WO 2012102501A3
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WIPO (PCT)
Prior art keywords
wafer
light emitting
emitting diode
diode package
level light
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PCT/KR2012/000314
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English (en)
French (fr)
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WO2012102501A2 (ko
Inventor
서대웅
이정훈
Original Assignee
서울옵토디바이스주식회사
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Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to EP12739572.1A priority Critical patent/EP2669963B1/en
Priority to JP2013551891A priority patent/JP2014507804A/ja
Priority to CN201280006927.5A priority patent/CN103339749B/zh
Publication of WO2012102501A2 publication Critical patent/WO2012102501A2/ko
Publication of WO2012102501A3 publication Critical patent/WO2012102501A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법이 개시된다. 이 방법은, 제1 기판 상에 복수의 반도체 적층 구조체를 형성하고, 상기 복수의 반도체 적층 구조체에 대응하도록 정렬된 제1 리드 전극들 및 제2 리드 전극들을 갖는 제2 기판을 준비하고, 상기 복수의 반도체 적층 구조체를 상기 제2 기판에 결합하고, 상기 결합 후, 상기 제1 기판 및 상기 제2 기판을 복수의 패키지로 분할하는 것을 포함한다. 이에 따라, 웨이퍼 레벨 발광 다이오드 패키지가 제공된다.
PCT/KR2012/000314 2011-01-28 2012-01-13 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 WO2012102501A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12739572.1A EP2669963B1 (en) 2011-01-28 2012-01-13 Method of fabricating a light emitting diode package
JP2013551891A JP2014507804A (ja) 2011-01-28 2012-01-13 ウエハーレベル発光ダイオードパッケージ及びそれを製造する方法
CN201280006927.5A CN103339749B (zh) 2011-01-28 2012-01-13 晶片级发光二极管封装件及制造此的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110008736A KR101761834B1 (ko) 2011-01-28 2011-01-28 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR10-2011-0008736 2011-01-28

Publications (2)

Publication Number Publication Date
WO2012102501A2 WO2012102501A2 (ko) 2012-08-02
WO2012102501A3 true WO2012102501A3 (ko) 2012-09-20

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PCT/KR2012/000314 WO2012102501A2 (ko) 2011-01-28 2012-01-13 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

Country Status (7)

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US (2) US8592232B2 (ko)
EP (2) EP2720283B1 (ko)
JP (1) JP2014507804A (ko)
KR (1) KR101761834B1 (ko)
CN (1) CN103339749B (ko)
TW (1) TWI528595B (ko)
WO (1) WO2012102501A2 (ko)

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EP2669963A4 (en) 2015-12-23
CN103339749A (zh) 2013-10-02
KR20120087505A (ko) 2012-08-07
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