JP2008263246A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2008263246A JP2008263246A JP2008202945A JP2008202945A JP2008263246A JP 2008263246 A JP2008263246 A JP 2008263246A JP 2008202945 A JP2008202945 A JP 2008202945A JP 2008202945 A JP2008202945 A JP 2008202945A JP 2008263246 A JP2008263246 A JP 2008263246A
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- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- chip
- led
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
【解決手段】 積層型アルミナ基板10の上面には、金属膜からなる一対の電極パッド13が形成されている。また、LEDチップ20のLED発光層28上には、p電極25およびn電極26が形成されている。また、LEDチップ20上には、p電極25の一部およびn電極26が露出するように絶縁保護膜27が形成されている。そして、絶縁保護膜27から露出したp電極25およびn電極26が積層型アルミナ基板10の一対の電極パッド13にAuバンプ30および銀ペースト31を介してそれぞれ接合され、積層型アルミナ基板10上にLEDチップ20が貼り合わされる。
【選択図】図1
Description
11 第1層アルミナシート
12 第2層アルミナシート
13 電極パッド
14 裏面引出し電極
15 スルーホール
16 金属膜
16a 切欠き
16b スルーホール
20 LEDチップ
20a LEDウエハ
21 サファイア基板
25 p電極
26 n電極
28 LED発光層
30 Auバンプ
31 銀ペースト
32,42 アンダーフィル樹脂
40 共晶半田バンプ
41 半田ボール
50 異方性導電フィルム
100 チップ型発光素子
110 透光性基板
120 ドーム型レンズ
130 ベース
140 集光レンズ
Claims (1)
- 支持部材上に発光素子が貼り合わされている発光装置であって、
前記支持部材は、絶縁基板と、前記絶縁基板の上面に形成された一対の導電膜とを備え、
前記発光素子は、透光性基板上に形成されたn型半導体層と、前記n型半導体層の上面の一部領域が露出するように前記n型半導体層上に形成されたp型半導体層と、前記n型半導体層の前記露出された領域上に形成されたn電極と、前記p型半導体層上に形成されたp電極と、前記n型半導体層の前記露出された領域を覆うように前記発光素子の上面に形成されるとともに前記n電極及び前記p電極の一部がそれぞれ露出する窓を有する絶縁保護膜とを備え、
前記p電極の最表層には酸化防止層と該酸化防止層の下地層とが形成されていることを特徴とする発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008202945A JP2008263246A (ja) | 2008-08-06 | 2008-08-06 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008202945A JP2008263246A (ja) | 2008-08-06 | 2008-08-06 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007213624A Division JP2007306035A (ja) | 2007-08-20 | 2007-08-20 | 発光素子の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012102181A Division JP2012165016A (ja) | 2012-04-27 | 2012-04-27 | 発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008263246A true JP2008263246A (ja) | 2008-10-30 |
Family
ID=39985442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008202945A Pending JP2008263246A (ja) | 2008-08-06 | 2008-08-06 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2008263246A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013138043A (ja) * | 2011-12-28 | 2013-07-11 | Nichia Chem Ind Ltd | 発光素子の実装方法 |
JP2014096539A (ja) * | 2012-11-12 | 2014-05-22 | Tokuyama Corp | 紫外発光素子、および発光構造体 |
EP2669963A4 (en) * | 2011-01-28 | 2015-12-23 | Seoul Viosys Co Ltd | PLATE LIGHT EMITTING DIODE HOUSING AND METHOD FOR PRODUCING SAME |
US11367819B2 (en) | 2014-08-26 | 2022-06-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light-emitting device array and light-emitting apparatus including light-emitting device array |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513816A (ja) * | 1991-06-28 | 1993-01-22 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JPH0794783A (ja) * | 1993-09-21 | 1995-04-07 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子 |
JPH09205224A (ja) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JPH10242520A (ja) * | 1997-02-28 | 1998-09-11 | Hitachi Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
JPH118414A (ja) * | 1997-06-18 | 1999-01-12 | Sony Corp | 半導体装置および半導体発光装置 |
-
2008
- 2008-08-06 JP JP2008202945A patent/JP2008263246A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513816A (ja) * | 1991-06-28 | 1993-01-22 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JPH0794783A (ja) * | 1993-09-21 | 1995-04-07 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子 |
JPH09205224A (ja) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JPH10242520A (ja) * | 1997-02-28 | 1998-09-11 | Hitachi Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
JPH118414A (ja) * | 1997-06-18 | 1999-01-12 | Sony Corp | 半導体装置および半導体発光装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2669963A4 (en) * | 2011-01-28 | 2015-12-23 | Seoul Viosys Co Ltd | PLATE LIGHT EMITTING DIODE HOUSING AND METHOD FOR PRODUCING SAME |
EP2720283A3 (en) * | 2011-01-28 | 2015-12-23 | Seoul Viosys Co., Ltd | Wafer-level light emitting diode package and method for manufacturing thereof |
JP2013138043A (ja) * | 2011-12-28 | 2013-07-11 | Nichia Chem Ind Ltd | 発光素子の実装方法 |
JP2014096539A (ja) * | 2012-11-12 | 2014-05-22 | Tokuyama Corp | 紫外発光素子、および発光構造体 |
US11367819B2 (en) | 2014-08-26 | 2022-06-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light-emitting device array and light-emitting apparatus including light-emitting device array |
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