TWI552385B - 發光元件 - Google Patents

發光元件 Download PDF

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Publication number
TWI552385B
TWI552385B TW104129262A TW104129262A TWI552385B TW I552385 B TWI552385 B TW I552385B TW 104129262 A TW104129262 A TW 104129262A TW 104129262 A TW104129262 A TW 104129262A TW I552385 B TWI552385 B TW I552385B
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TW
Taiwan
Prior art keywords
type semiconductor
epitaxial structure
semiconductor layer
light
carrier
Prior art date
Application number
TW104129262A
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English (en)
Other versions
TW201711227A (zh
Inventor
林子暘
賴育弘
羅玉雲
Original Assignee
錼創科技股份有限公司
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Publication date
Application filed by 錼創科技股份有限公司 filed Critical 錼創科技股份有限公司
Priority to TW104129262A priority Critical patent/TWI552385B/zh
Priority to US15/001,250 priority patent/US20170069796A1/en
Application granted granted Critical
Publication of TWI552385B publication Critical patent/TWI552385B/zh
Publication of TW201711227A publication Critical patent/TW201711227A/zh
Priority to US15/658,422 priority patent/US10170455B2/en
Priority to US16/199,253 priority patent/US10593658B2/en

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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description

發光元件
本發明是有關於一種半導體元件，且特別是有關於一種發光元件。
一般來說，發光晶片是由磊晶結構、N型電極以及P型電極所組成，其中N型電極與P型電極會分別接觸N型半導體層與P型半導體層。為了增加發光晶片的應用，通常會將製作好的發光晶片利用升溫的方式產生金屬接合，藉此將發光晶片固定於一電路板上而形成一發光模組。由於發光晶片和電路板二者之間的材料熱膨脹係數不匹配（mismatch），因此其所產生的熱應力（thermal stress）與內應力的現象也日漸嚴重，而此結果將導致發光晶片的磊晶結構與電路板之間產生錯位的問題，因而降低產品的結構可靠度（reliability）。
本發明提供一種發光元件，適用於轉置到各式接收基板，並具有較佳的結構可靠度。
本發明的發光元件，其包括一載板、至少一磊晶結構、至少一緩衝墊以及至少一接合墊。磊晶結構配置於載板上。緩衝墊配置於載板與磊晶結構之間，其中磊晶結構透過緩衝墊暫時黏合於載板上。接合墊配置於磊晶結構上，其中磊晶結構透過接合墊與一接收基板電性連接。
在本發明的一實施例中，上述的載板為一臨時基板。
在本發明的一實施例中，上述的磊晶結構包括一第一型半導體層、一主動層以及一第二型半導體層。主動層位於第一型半導體層與第二型半導體層之間。第二型半導體層位於主動層與緩衝墊之間。
在本發明的一實施例中，上述的第一型半導體層的邊長尺寸小於第二型半導體層的邊長尺寸，且第一型半導體層與第二型半導體層的邊長尺寸的差值介於0.5微米至5微米之間。
在本發明的一實施例中，上述的第二型半導體層的厚度大於第一型半導體層的厚度。
在本發明的一實施例中，上述的第二型半導體層的厚度為主動層的厚度的3倍至15倍，而第二型半導體層的厚度為第一型半導體的厚度的10倍至20倍。
在本發明的一實施例中，上述的接合墊包括至少一第一接合墊與至少一第二接合墊。第一接合墊與第二接合墊位於磊晶結構的同一側。第一接合墊與第一型半導體層電性連接，且第二接合墊與第二型半導體層電性連接。
在本發明的一實施例中，上述的發光元件，更包括：一絕緣層，配置於緩衝墊上且包覆磊晶結構的側壁，其中絕緣層暴露出磊晶結構的一頂表面，而形成一接點開口，且接合墊配置於接點開口上並與磊晶結構電性連接。
在本發明的一實施例中，上述的緩衝墊於載板上的正投影面積為磊晶結構於載板上的正投影面積的0.6倍到1.2倍。
在本發明的一實施例中，上述的緩衝墊與磊晶結構於載板的一垂直方向上為相似圖案。
在本發明的一實施例中，上述的緩衝墊的材質為一高分子聚合物。
在本發明的一實施例中，上述的磊晶結構的一外部量子效率曲線的最高峰值電流密度在2 A/cm 2以下。
在本發明的一實施例中，上述的磊晶結構的缺陷密度小於5X10 8/cm 2。
本發明的發光元件，其包括一載板、多個磊晶結構、多個緩衝墊以及多個接合墊。磊晶結構週期性地配置於載板上。緩衝墊配置於載板與磊晶結構之間，且個別對應於磊晶結構設置，其中磊晶結構分別透過緩衝墊黏合於載板上。接合墊配置於磊晶結構上，其中磊晶結構透過接合墊與一接收基板電性連接，其中任兩相鄰的緩衝墊的間隙介於每一磊晶結構邊長尺寸的0.2倍至2倍。
基於上述，由於本發明的發光元件具有緩衝墊，因此轉置於接收基板時，接合墊與接收基板熱接合，緩衝墊可以吸收接合時所產生的內應力，並可降低施高壓力於磊晶結構時所產生的位移。簡言之，緩衝墊可避免磊晶結構與接收基板之間產生錯位的問題。故，本發明的發光元件的結構設計有助於後續的熱接合製程，可有效提高發光元件的結構可靠度。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A繪示為本發明的一實施例的一種發光元件的剖面示意圖。請參考圖1A，在本實施例中，發光元件100a包括一載板110、至少一磊晶結構120（圖1A中僅繪示一個）、至少一緩衝墊130（圖1A中僅繪示一個）以及至少一接合墊140a（圖1A中僅繪示一個）。磊晶結構120配置於載板110上。緩衝墊130配置於載板110與磊晶結構120之間，其中磊晶結構120透過緩衝墊130暫時黏合於載板110上。接合墊140a配置於磊晶結構120上，其中磊晶結構120透過接合墊140a與一接收基板（未繪示）電性連接。
詳細來說，本實施例的載板110實質上為一臨時基板，用以暫時性地承載磊晶結構120，其中載板110的材質可例如是矽、碳化矽（SiC）、砷化鎵（GaAs）、氮化鎵（GaN）、玻璃、藍寶石或陶瓷。磊晶結構120包括一第一型半導體層122、一主動層124以及一第二型半導體層126，其中主動層124位於第一型半導體層122與第二型半導體層126之間，而第二型半導體層126位於主動層124與緩衝墊130之間。在本實施例的磊晶結構120中，第一型半導體層122例如是一P型半導體層，而第二型半導體層126例如是一N型半導體層，且主動層124為一多重量子井（multiple quantum well, MQW）結構。於其他未繪示的實施例中，亦可以是第一型半導體層122例如是一N型半導體層，而第二型半導體層126例如是一P型半導體層，且主動層124為一多重量子井結構，於此並不加以限制。
更詳細地說，上述的磊晶結構120可包括Ⅱ-Ⅵ族材料（例如：鋅化硒（ZnSe））或Ⅲ-Ⅴ氮族化物材料（例如：氮化鎵（GaN）、氮化鋁（AlN）、氮化銦（InN）、氮化銦鎵（InGaN）、氮化鋁鎵（AlGaN）或氮化鋁銦鎵（AlInGaN））。此外，本實施例的磊晶結構120的邊長尺寸小於目前一般常用的發光二極體的磊晶結構的邊長尺寸（例如是邊長尺寸介於0.2公釐至1公釐之間）；較佳地，磊晶結構120的邊長尺寸為3微米至40微米之間。在本實施例中，磊晶結構120的一底表面120b比磊晶結構120的一頂表面120a寬，且磊晶結構120的剖面側視為一梯形，更詳細地說，第一型半導體層122的邊長尺寸小於第二型半導體層126的邊長尺寸，且第一型半導體層122與第二型半導體層126的邊長尺寸的差值介於0.5微米至5微米，較佳地，第一型半導體層122的邊長尺寸介於3微米至38微米，而第二型半導體層126的邊長尺寸介於3.5微米至40微米。於其他未繪示的實施例中，磊晶結構120的頂表面120a亦可比磊晶結構120的底表面120b寬，磊晶結構120的剖面側視為一倒梯形，即第一型半導體層122的邊長尺寸大於第二型半導體層126的邊長尺寸，且第一型半導體層122與第二型半導體層126的邊長尺寸的差值介於0.5 微米至5微米，較佳地，第一型半導體層122的邊長尺寸介於3.5微米至40微米，而第二型半導體層126的邊長尺寸介於3微米至38微米。或者是，於其他未繪示的實施例中，磊晶結構120的底表面120b與磊晶結構120的頂表面具有近似相同的邊長尺寸，而磊晶結構120的剖面側視為一矩形，即第一型半導體層122的邊長尺寸等於第二型半導體層126的邊長尺寸，較佳地，第一型半導體層122與第二型半導體層126的邊長尺寸均介於3微米至40微米之間。縱觀上述三種實施例中，磊晶結構120的底表面120b比磊晶結構120的頂表面寬（即第一型半導體層122的邊長尺寸小於第二型半導體層126的邊長尺寸，且磊晶結構120的剖面側視為一梯形）可為較有利的設計，理由在於：磊晶結構120和緩衝墊130的接觸面積較大，應力釋放的效果最佳。
如圖1A所示，在本實施例的磊晶結構120中，第二型半導體層126靠近緩衝墊130，且第二型半導體層126直接接觸緩衝墊130。再者，本實施例的第二型半導體層126的厚度大於第一型半導體層122的厚度，其中第二型半導體層126的厚度介於1微米至6微米之間，主動層124的厚度介於0.1微米至1微米之間，而第一型半導體層122的厚度介於0.1微米至0.5微米之間。舉一最佳實施態樣，第二型半導體層126的厚度例如是5微米，主動層124的厚度例如是0.7微米，而第一型半導體層122的厚度例如是0.4微米。此外，磊晶結構120中的第二型半導體層126之厚度最大，第二型半導體層126的厚度為主動層124的厚度的3倍至15倍，而第二型半導體層126的厚度為第一型半導體122的厚度的10倍至20倍，藉由最厚的第二型半導體層126直接接觸緩衝墊130，可保護主動層124，避免破壞到主動層124的結構，進而影響發光元件100a的出光表現。
。再者，本實施例的磊晶結構120的一外部量子效率曲線的最高峰值電流密度小於目前一般常用的發光二極體的磊晶結構的峰值電流密度，較佳地，在2 A/cm 2以下，更佳地，最高峰值電流密度介於0.5 A/cm 2至1.5 A/cm 2之間。意即，本實施例的磊晶結構120適於在低電流密度的情況下操作。另外，相較於目前一般的發光二極體的磊晶結構，本實施例的磊晶結構120的缺陷密度也較小。一般來說，常見的發光二極體的磊晶結構的缺陷密度約介於10 9/cm 2至10 10/cm 2，而本實施例的磊晶結構120的缺陷密度小於5X10 8/cm 2，較佳地，磊晶結構120的缺陷密度介於5X10 5/cm 2至10 8/cm 2之間。
再者，本實施例的緩衝墊130可視為一緩衝結構，其材質例如為一具有黏性的高分子聚合物，以熱固化或ＵＶ固化而成，如環氧樹脂、聚醯亞胺、聚酯、聚氨酯、苯並環丁烯、聚乙烯、聚丙烯、聚丙烯酸酯及上述材料之組合 。也就是說，緩衝墊130可同時具有黏著以及緩衝的功能。在一較佳實施例中，緩衝墊130為一ＵＶ固化而成的高分子聚合物。如圖1A所示，本實施例的緩衝墊130的位置與磊基結構120相互對應，其中緩衝墊130於載板110上的正投影面積為磊晶結構120於載板110上的正投影面積的0.6倍到1.2倍。上述的緩衝墊130的結構設計是為了要確保磊晶結構120任一位置所受到的壓力都可以被緩衝墊130所吸收。上述的緩衝墊130可為一或多層結構，舉例來說，緩衝墊130可為二種高分子材料的雙層結構，或是由二種高分子交替堆疊而成多層結構，但不以此為限。此外，如圖1A及1B所示，亦可藉由磊晶結構120和120’作為遮罩並利用蝕刻製程來定義出緩衝墊130及130’的形狀與尺寸。換言之，本實施例的發光元件100a 及100a’的緩衝墊130及130’與磊晶結構120及120’於載板110的一垂直方向H上來看實質上為相似圖案。於圖1A所示，作為遮罩的磊晶結構120的剖面側視為一梯形，故蝕刻製程後所定義出的緩衝墊130的尺寸略大於磊晶結構120。於圖1Ｂ所示，作為遮罩的磊晶結構120’的剖面側視為一矩形，故蝕刻製程後所定義出的緩衝墊130’的近似於磊晶結構120’。於其他未繪示的實施例中，當磊晶結構120的剖面側視為一倒梯形，蝕刻製程後所定義出的緩衝墊130的尺寸略小於磊晶結構120。更進一步的說，也可藉由蝕刻製程參數的調整，控制緩衝墊130與磊晶結構120之間的尺寸關係。
此外，本實施例的接合墊140a位於第一型半導體層122上且與第一型半導體層122結構性與電性連接。本實施例的磊晶結構120可透過接合墊140a與接收基板（未繪示）電性連接，來提高發光元件100a的應用性。接合墊140a可包括一或多層，舉例來說，接合墊140a可包括電極層（未繪示）及視情況配置的障壁層（未繪示）。電極層可與第一型半導體層122歐姆接觸，並可由高功函數金屬（例如：鉑、鎳、鈦、金、鉻及上述材料之組合）或是金屬氧化物（如氧化銦錫及氧化鋅）形成。障壁層可視情況配置，用於防止雜質擴散進入第一型半導體層122。舉例來說，障壁層包括但不限於鈦鎢合金、鉑、鈀、鈦、鉭及上述材料之組合。接合墊140a亦可進一步地包括反射層（未繪示），用於反射由主動層124所放射出的光，舉例來說，反射層包括但不限於銀、鋁及上述材料之合金。再者，接合墊140a亦可包含非金屬的導電材料，例如導電高分子、石墨、石墨烯及黑磷。在本實施例中，接合墊140a的材質可為金屬材料、非金屬材料或金屬材料與非金屬材料同時搭配使用，只要是藉由接合墊140a使磊晶結構120與接收基板（未繪示）電性連接即可。當與接收基板電性連接時，在此是透過熱壓合的方式將發光元件100a的接合墊140a對準壓合至接收基板的接墊（未繪示）上，在高溫下，施以高壓力一段時間，進而形成接合。此時，發光元件100a的緩衝墊130可當作緩衝，吸收接合時所產生的內壓力，可降低施高壓於磊晶結構120時所產生的位移，可避免磊晶結構120與接收基板之間產生錯位問題。
在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。
圖2繪示為本發明的另一實施例的一種發光元件的剖面示意圖。請同時參考圖1A與圖2，本實施例的發光元件100b與圖1A中的發光元件100a相似，惟二者主要差異之處在於：本實施例的發光元件100b更包括一絕緣層150，其中絕緣層150配置於緩衝墊130上且包覆磊晶結構120之側壁，而絕緣層150暴露出磊晶結構120的頂表面120a，並形成一接點開口Ｏ，其中接點開口Ｏ的寬度小於磊晶結構120的頂表面120a的寬度，且接合墊140a配置於接點開口Ｏ上並與磊晶結構120電性連接。於其他未繪示的實施例中，接點開口Ｏ的寬度可大於或近似等於磊晶結構120的頂表面120a的寬度，於此並不加以限制。絕緣層150的設置目的在於有效保護磊晶結構120的邊緣，以避免水氣及氧氣侵襲，可有效提高整體發光元件100b的產品可靠度，其中絕緣層150的材料例如是二氧化矽、氧化鋁、氮化矽及上述材料之組合。
圖3繪示為本發明的另一實施例的一種發光元件的剖面示意圖。請同時參考圖1A與圖3，本實施例的發光元件100c與圖1A中的發光元件100a相似，惟二者主要差異之處在於：本實施例的發光元件100c包括多個磊晶結構120以及多個緩衝墊130，其中這些磊晶結構120週期性地分散配置於載板110上，而這些緩衝墊130皆分別對應於這些磊晶結構120設置。在一實施例中，這些磊晶結構120為矩陣式排列，任兩相鄰的磊晶結構120之間的的間隙P1為2微米至70微米，而任兩相鄰的緩衝墊130之間的的間隙P2為2微米至70微米。在後續的製程中，請參考圖4，當將發光元件100c透過熱接合製程而與接收基板10電性連接時，接合墊140a會與接收基板10上的接墊20電性連接。此時，緩衝墊130可以吸收接合時所產生的內應力，並可降低施高壓力於磊晶結構120時所產生的位移。在本實施例中，接收基板10可為顯示基板（display substrate）、發光基板（lighting substrate）、具電晶體（transistors）或積體電路（integrated circuits (ICs)）的基板，或具有金屬再分配線（metal redistribution lines）的基板。更詳細地說，接墊20由熔融溫度低於140℃的材料所形成，例如錫或銦，以此設計進行熱壓合時，加熱接收基板10至高於接墊20的熔融溫度但低於接合墊140a的熔融溫度之一溫度，在此溫度下，接墊20轉化為液狀，而接合墊140a仍維持固狀，接墊20與接合墊140a對接時，液狀的接墊20可以降低接觸面的碰撞力，避免發光元件100c產生傾斜，減緩壓合時各個磊晶結構120受力不均問題。
在本實施例中，接墊20與接收基板10齊高，但不以此為限。於其他未繪示的實施例中，接墊20亦可為一突出於接收基板10的塊體，意即接墊20的上表面高於接收基板10的上表面，或是接墊20為一內凹於接收基板10的塊體，意即接墊20的上表面低於接收基板10的上表面。此外，在各個接墊20之間的接收基板10的上表面上可形成一吸光層（未繪示），用以吸收部分散射光，可降低各個磊晶結構120互相光干擾的現象。
在本實施例中，任兩相鄰的緩衝墊130之間的間隙P2介於磊晶結構120邊長尺寸的0.2至2倍。較佳地，任兩相鄰的緩衝墊130之間的間隙P2需為小於磊晶結構120的邊長尺寸，任兩相鄰的緩衝墊130之間的的間隙P2介於磊晶結構120邊長尺寸的0.2至0.9倍。若間隙P2小於磊晶結構120邊長尺寸的0.2倍，則進行熱接合製程時，緩衝墊130受到壓力而擴張，容易碰觸到相鄰的緩衝墊130，因而造成對應的磊晶結構120產生位移問題;若間隙P2大於磊晶結構120邊長尺寸的2倍，進行熱接合製程時，緩衝的面積不足，容易破壞到磊晶結構120。簡言之，緩衝墊130可避免磊晶結構120與接收基板10之間產生錯位的問題，同時也可保護磊晶結構120。故，本實施例的發光元件100c的結構設計有助於後續的熱接合製程，可有效提高發光元件100c的結構可靠度。此外，由於第二型半導體層126的厚度大於第一型半導體層122的厚度，意即，第一型半導體層122的厚度小於第二型半導體層126的厚度。因此，當將發光元件100c接合至接收基板10時，磊晶結構120的主動層124可較接近接收基板10，具有較佳的散熱效果。值得一提的是，於熱接合製程之後，即可移除緩衝墊130與載板110，並於磊晶結構120的第二型半導體層126上製作另一接合墊（未繪示），此時磊晶結構120、接合墊140a及另一接合墊的設置則可定義出垂直式發光二極體晶片。
此外，本發明並不限制接合墊140a的配置位置及其個數。雖然上述的接合墊140a僅配置於磊晶結構120相對遠離緩衝墊130的表面上，且每一個磊晶結構120僅配置有一個接合墊140a。但於其他實施例中，請同時參考圖3與圖5，本實施例的發光元件100d與圖3中的發光元件100c相似，惟二者主要差異之處在於：本實施例的發光元件100d的接合墊140b包括第一接合墊142b與第二接合墊144b。第一接合墊142b與第二接合墊144b位於磊晶結構120的同一側，其中第一接合墊142b與第一型半導體層122電性連接，且第二接合墊144b與第二型半導體層126電性連接。也就是說，本實施例的每一磊晶結構120上都配置有一個第一接合墊142b與一個第二接合墊144b，且第一接合墊142b與第二接合墊144b是位於磊晶結構120相對遠離緩衝墊130的表面上。此時，磊晶結構120、第一接合墊142b與第二接合墊144b的設計可視為是一種水平式發光二極體晶片。
另外，發光元件100d可更包括絕緣層150，其中絕緣層150配置於緩衝墊130上且包覆磊晶結構120，而絕緣層150暴露出第一接合墊142b與第二接合墊144b。絕緣層150的設置目的在於有效保護磊晶結構120的邊緣，以避免水氣及氧氣侵襲，可有效提高整體發光元件100d的產品可靠度，其中絕緣層150的材料例如是二氧化矽、氧化鋁、氮化矽及上述材料之組合。在後續的製程中，請參考圖6，當將發光元件100d透過熱接合製程而與接收基板10電性連接時，第一接合墊142b與第二接合墊144b會與接收基板10上的接墊20電性連接，舉例來說，接收基板可為顯示基板（display substrate）、發光基板（lighting substrate、具電晶體（transistors）或積體電路（integrated circuits (ICs)）的基板，或具有金屬再分配線（metal redistribution lines）的基板。此時，緩衝墊130可以吸收接合時所產生的內應力，並可降低施高壓力於磊晶結構120時所產生的位移。簡言之，緩衝墊130可避免磊晶結構120與接收基板10之間產生錯位的問題。故，本實施例的發光元件100d的結構設計有助於後續的熱接合製程，可有效提高發光元件100d的結構可靠度。
綜上所述，由於本發明的發光元件具有緩衝墊，因此後續與接收基板熱接合時，緩衝墊可以吸收接合時所產生的內應力，並可降低施高壓力於磊晶結構時所產生的位移。簡言之，緩衝墊可避免磊晶結構與接收基板之間產生錯位的問題。故，本發明的發光元件的結構設計有助於後續的熱接合製程，可有效提高發光元件的結構可靠度。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10‧‧‧接收基板
20‧‧‧接墊
100a、100a’、100b、100c、100d‧‧‧發光元件
110‧‧‧載板
120、120’‧‧‧磊晶結構
120a‧‧‧頂表面
120b‧‧‧底表面
122‧‧‧第一型半導體層
124‧‧‧主動層
126‧‧‧第二型半導體層
130、130’‧‧‧緩衝墊
140a、140b‧‧‧接合墊
142b‧‧‧第一接合墊
144b‧‧‧第二接合墊
150‧‧‧絕緣層
H‧‧‧垂直方向
O‧‧‧接點開口
P1、P2‧‧‧間隙
圖1A繪示為本發明的一實施例的一種發光元件的剖面示意圖。 圖1B繪示為本發明的另一實施例的一種發光元件的剖面示意圖。 圖2繪示為本發明的另一實施例的一種發光元件的剖面示意圖。 圖3繪示為本發明的另一實施例的一種發光元件的剖面示意圖。 圖4繪示為圖3的發光元件熱接合至接收基板的剖面示意圖。 圖5繪示為本發明的另一實施例的一種發光元件的剖面示意圖。 圖6繪示為圖5的發光元件熱接合至接收基板的剖面示意圖。
100a‧‧‧發光元件
110‧‧‧載板
120‧‧‧磊晶結構
120a‧‧‧頂表面
120b‧‧‧底表面
122‧‧‧第一型半導體層
124‧‧‧主動層
126‧‧‧第二型半導體層
130‧‧‧緩衝墊
140a‧‧‧接合墊
H‧‧‧垂直方向

Claims (13)

  1. 一種發光元件，包括：一載板；至少一磊晶結構，配置於該載板上；至少一緩衝墊，配置於該載板與該磊晶結構之間，該緩衝墊於該載板上的正投影面積小於該載板的面積且該緩衝墊的材質為一高分子聚合物，其中該磊晶結構透過該緩衝墊暫時黏合於該載板上；以及至少一接合墊，配置於該磊晶結構上，其中該磊晶結構透過該接合墊與一接收基板電性連接。
  2. 如申請專利範圍第1項所述的發光元件，其中該載板為一臨時基板。
  3. 如申請專利範圍第1項所述的發光元件，其中該磊晶結構包括一第一型半導體層、一主動層以及一第二型半導體層，該主動層位於該第一型半導體層與該第二型半導體層之間，而該第二型半導體層位於該主動層與該緩衝墊之間。
  4. 如申請專利範圍第3項所述的發光元件，其中該第一型半導體層的邊長尺寸小於該第二型半導體層的邊長尺寸，且該第一型半導體層與該第二型半導體層的邊長尺寸的差值介於0.5微米至5微米之間。
  5. 如申請專利範圍第3項所述的發光元件，其中該第二型半導體層的厚度大於該第一型半導體層的厚度。
  6. 如申請專利範圍第5項所述的發光元件，其中該第二型半導體層的厚度為該主動層的厚度的3倍至15倍，該第二型半導體層的厚度為該第一型半導體的厚度的10倍至20倍。
  7. 如申請專利範圍第3項所述的發光元件，其中該至少一接合墊包括至少一第一接合墊與至少一第二接合墊，該第一接合墊與該第二接合墊位於該磊晶結構的同一側，而該第一接合墊與該第一型半導體層電性連接，且該第二接合墊與該第二型半導體層電性連接。
  8. 如申請專利範圍第1項所述的發光元件，更包括：一絕緣層，配置於該緩衝墊上且包覆該磊晶結構的側壁，且該絕緣層暴露出該磊晶結構的一頂表面，而形成一接點開口，該接合墊配置於該接點開口上並與該磊晶結構電性連接。
  9. 如申請專利範圍第1項所述的發光元件，其中該緩衝墊於該載板上的正投影面積為該磊晶結構於該載板上的正投影面積的0.6倍到1.2倍。
  10. 如申請專利範圍第1項所述的發光元件，其中該緩衝墊與該磊晶結構於該載板的一垂直方向上為共形圖案。
  11. 如申請專利範圍第1項所述的發光元件，其中該磊晶結構的一外部量子效率曲線的最高峰值電流密度在2A/cm2以下。
  12. 如申請專利範圍第1項所述的發光元件，其中該磊晶結構的缺陷密度小於5X108/cm2。
  13. 一種發光元件，包括： 一載板；多個磊晶結構，週期性地配置於該載板上；多個緩衝墊，配置於該載板與該些磊晶結構之間，且個別對應於該些磊晶結構設置，該些緩衝墊的材質為一高分子聚合物，其中該些磊晶結構分別透過該些緩衝墊黏合於該載板上；以及多個接合墊，配置於該些磊晶結構上，其中該些磊晶結構透過該些接合墊與一接收基板電性連接，其中任兩相鄰的該些緩衝墊的間隙介於各該磊晶結構邊長尺寸的0.2倍至2倍。
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