WO2010018946A3 - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
WO2010018946A3
WO2010018946A3 PCT/KR2009/004349 KR2009004349W WO2010018946A3 WO 2010018946 A3 WO2010018946 A3 WO 2010018946A3 KR 2009004349 W KR2009004349 W KR 2009004349W WO 2010018946 A3 WO2010018946 A3 WO 2010018946A3
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WO
WIPO (PCT)
Prior art keywords
emitting device
semiconductor light
manufacturing same
light
emitting structure
Prior art date
Application number
PCT/KR2009/004349
Other languages
English (en)
French (fr)
Other versions
WO2010018946A2 (ko
Inventor
정환희
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to CN200980131779.8A priority Critical patent/CN102124579B/zh
Priority to EP09806808.3A priority patent/EP2317575B1/en
Publication of WO2010018946A2 publication Critical patent/WO2010018946A2/ko
Publication of WO2010018946A3 publication Critical patent/WO2010018946A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

실시 예는 반도체 발광소자 및 그 제조방법에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제2전극층; 상기 제2전극층의 아래에 복수의 화합물 반도체층을 포함하는 발광 구조물; 상기 발광 구조물의 하부 층들의 내측 영역을 복수의 영역으로 분할하는 적어도 하나의 분할 홈; 및 상기 발광 구조물의 아래에 제1전극을 포함한다.
PCT/KR2009/004349 2008-08-12 2009-08-04 반도체 발광소자 및 그 제조방법 WO2010018946A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200980131779.8A CN102124579B (zh) 2008-08-12 2009-08-04 半导体发光器件及其制造方法
EP09806808.3A EP2317575B1 (en) 2008-08-12 2009-08-04 Semiconductor light emitting device and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080079129A KR101428088B1 (ko) 2008-08-12 2008-08-12 반도체 발광소자 및 그 제조방법
KR10-2008-0079129 2008-08-12

Publications (2)

Publication Number Publication Date
WO2010018946A2 WO2010018946A2 (ko) 2010-02-18
WO2010018946A3 true WO2010018946A3 (ko) 2010-05-14

Family

ID=41669442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004349 WO2010018946A2 (ko) 2008-08-12 2009-08-04 반도체 발광소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US9577145B2 (ko)
EP (1) EP2317575B1 (ko)
KR (1) KR101428088B1 (ko)
CN (1) CN102124579B (ko)
WO (1) WO2010018946A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428088B1 (ko) * 2008-08-12 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101020945B1 (ko) 2009-12-21 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101039946B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
WO2012020896A1 (en) * 2010-08-11 2012-02-16 Seoul Opto Device Co., Ltd. Uv light emitting diode and method of manufacturing the same
TW201415670A (zh) * 2012-10-03 2014-04-16 Lextar Electronics Corp 發光二極體晶片
WO2020076452A1 (en) 2018-10-10 2020-04-16 Glo Ab Vertical stacks of light emitting diodes and control transistors and method of making thereof
US20230096713A1 (en) * 2020-02-21 2023-03-30 Sony Semiconductor Solutions Corporation Light-emiting element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040104232A (ko) * 2003-06-03 2004-12-10 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
KR20070116687A (ko) * 2005-04-04 2007-12-10 토호쿠 테크노 아르크 코포레이션 리미티드 ＧａＮ 단결정 성장방법, ＧａＮ 기판 제작방법, ＧａＮ계소자 제조방법 및 ＧａＮ계 소자
JP2007324577A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法

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JPS60136788A (ja) * 1983-12-26 1985-07-20 日本ビクター株式会社 Ｌｅｄ平面パネルデイスプレイの製作法
EP1471583B1 (en) * 2002-01-28 2009-10-07 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
KR100631993B1 (ko) * 2005-07-20 2006-10-09 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
KR100668964B1 (ko) 2005-09-27 2007-01-12 엘지전자 주식회사 나노 홈을 갖는 발광 소자 및 그의 제조 방법
KR20070088145A (ko) * 2006-02-24 2007-08-29 엘지전자 주식회사 발광 다이오드 및 그 제조방법
EP2023410A1 (en) 2006-05-01 2009-02-11 Mitsubishi Chemical Corporation Integrated semiconductor light emitting device and method for manufacturing same
EP2041802B1 (en) 2006-06-23 2013-11-13 LG Electronics Inc. Light emitting diode having vertical topology and method of making the same
KR100727472B1 (ko) * 2006-10-17 2007-06-13 (주)에피플러스 발광 다이오드 및 그 형성 방법
KR20100000020A (ko) * 2008-06-24 2010-01-06 한덕영 롤 브라인더의 하단 지지부 은폐 장치
KR101428088B1 (ko) * 2008-08-12 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040104232A (ko) * 2003-06-03 2004-12-10 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
KR20070116687A (ko) * 2005-04-04 2007-12-10 토호쿠 테크노 아르크 코포레이션 리미티드 ＧａＮ 단결정 성장방법, ＧａＮ 기판 제작방법, ＧａＮ계소자 제조방법 및 ＧａＮ계 소자
JP2007324577A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法

Also Published As

Publication number Publication date
CN102124579A (zh) 2011-07-13
WO2010018946A2 (ko) 2010-02-18
US20100163893A1 (en) 2010-07-01
KR101428088B1 (ko) 2014-08-07
US9577145B2 (en) 2017-02-21
EP2317575A2 (en) 2011-05-04
KR20100020375A (ko) 2010-02-22
EP2317575B1 (en) 2018-08-01
CN102124579B (zh) 2015-05-13
EP2317575A4 (en) 2014-08-06

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