WO2011083940A3 - 발광 다이오드 및 그것을 제조하는 방법 - Google Patents

발광 다이오드 및 그것을 제조하는 방법 Download PDF

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WO2011083940A3
WO2011083940A3 PCT/KR2011/000002 KR2011000002W WO2011083940A3 WO 2011083940 A3 WO2011083940 A3 WO 2011083940A3 KR 2011000002 W KR2011000002 W KR 2011000002W WO 2011083940 A3 WO2011083940 A3 WO 2011083940A3
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layer
doped
type contact
super
silicon
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PCT/KR2011/000002
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English (en)
French (fr)
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WO2011083940A2 (ko
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김광중
한창석
최승규
남기범
김남윤
김경해
윤주형
예경희
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서울옵토디바이스주식회사
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Priority claimed from KR1020100052861A external-priority patent/KR101648948B1/ko
Priority claimed from KR1020100052860A external-priority patent/KR20110133239A/ko
Priority claimed from KR1020100113666A external-priority patent/KR101712549B1/ko
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to JP2012547950A priority Critical patent/JP5709899B2/ja
Priority to CN201180012486.5A priority patent/CN102782883B/zh
Priority to EP11731878.2A priority patent/EP2523228B1/en
Publication of WO2011083940A2 publication Critical patent/WO2011083940A2/ko
Publication of WO2011083940A3 publication Critical patent/WO2011083940A3/ko

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    • H—ELECTRICITY
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    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

신뢰성 있는 발광 다이오드 및 그것을 제조하는 방법이 개시된다. 본 발명의 일 태양에 따른 발광 다이오드는, 실리콘이 도핑된 n형 콘택층; p형 콘택층; n형 콘택층과 p형 콘택층 사이에 개재된 활성 영역; n형 콘택층과 활성 영역 사이에 개재된 초격자층; 초격자층과 n형 콘택층 사이에 개재된 언도프트 중간층; 및 언도프트층과 초격자층 사이에 개재된 전자 보강층을 포함한다. 초격자층은 활성 영역에 가장 가까운 마지막 층에만 의도적으로 실리콘이 도핑되며, 마지막 층의 실리콘 도핑 농도는 n형 콘택층의 실리콘 도핑 농도보다 높다. 활성 영역에 가깝게 위치하는 초격자층의 거의 모든 층에 실리콘을 의도적으로 도핑하지 않기 때문에 누설 전류를 감소시킬 수 있으며, 활성 영역에 가장 가까운 마지막층에 고농도의 실리콘을 도핑함으로써 접합(junction) 특성이 나빠지는 것을 방지하여 정전 방전 특성을 개선할 수 있다.
PCT/KR2011/000002 2010-01-05 2011-01-03 발광 다이오드 및 그것을 제조하는 방법 WO2011083940A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012547950A JP5709899B2 (ja) 2010-01-05 2011-01-03 発光ダイオード及びその製造方法
CN201180012486.5A CN102782883B (zh) 2010-01-05 2011-01-03 发光二极管及其制造方法
EP11731878.2A EP2523228B1 (en) 2010-01-05 2011-01-03 Light emitting diode

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR10-2010-0000559 2010-01-05
KR20100000559 2010-01-05
KR10-2010-0052860 2010-06-04
KR10-2010-0052861 2010-06-04
KR1020100052861A KR101648948B1 (ko) 2010-06-04 2010-06-04 신뢰성 있는 발광 다이오드 및 그것을 제조하는 방법
KR1020100052860A KR20110133239A (ko) 2010-06-04 2010-06-04 신뢰성 있는 발광 다이오드
KR10-2010-0113666 2010-11-16
KR1020100113666A KR101712549B1 (ko) 2010-01-05 2010-11-16 스페이서층을 가지는 발광 다이오드

Publications (2)

Publication Number Publication Date
WO2011083940A2 WO2011083940A2 (ko) 2011-07-14
WO2011083940A3 true WO2011083940A3 (ko) 2011-11-24

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PCT/KR2011/000002 WO2011083940A2 (ko) 2010-01-05 2011-01-03 발광 다이오드 및 그것을 제조하는 방법

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US (4) US8357924B2 (ko)
EP (1) EP2523228B1 (ko)
JP (1) JP5709899B2 (ko)
CN (1) CN102782883B (ko)
WO (1) WO2011083940A2 (ko)

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US8357924B2 (en) 2013-01-22
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US20130099201A1 (en) 2013-04-25
US20120037881A1 (en) 2012-02-16
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