WO2010018985A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2010018985A3
WO2010018985A3 PCT/KR2009/004487 KR2009004487W WO2010018985A3 WO 2010018985 A3 WO2010018985 A3 WO 2010018985A3 KR 2009004487 W KR2009004487 W KR 2009004487W WO 2010018985 A3 WO2010018985 A3 WO 2010018985A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light emitting
active layer
gallium nitride
type contact
Prior art date
Application number
PCT/KR2009/004487
Other languages
English (en)
French (fr)
Other versions
WO2010018985A2 (ko
Inventor
장정태
구분회
안도열
박승환
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Priority to US13/058,595 priority Critical patent/US8415655B2/en
Publication of WO2010018985A2 publication Critical patent/WO2010018985A2/ko
Publication of WO2010018985A3 publication Critical patent/WO2010018985A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 활성층 및 활성층의 상부 및 하부에 배치되어 활성층에 인가되는 응력을 완화시켜 활성층 내부의 자발분극에 의한 전계 및 피에조에 의한 전계의 합을 감소시키는 초격자층으로 형성된 장벽층을 포함하는 발광층; 발광층에 전자를 주입하는 N형 콘택층; 및 발광층을 경계로 N형 콘택층과 대향하게 배치되고, 발광층에 정공을 주입하는 P형 콘택층을 포함하며, 활성층은 질화인듐갈륨(InGaN)을 포함하고, 장벽층은 질화알루미늄갈륨(AlGaN) 박막 및 질화인듐갈륨(InGaN) 박막이 교대로 적층된 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
PCT/KR2009/004487 2008-08-12 2009-08-12 반도체 발광소자 WO2010018985A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/058,595 US8415655B2 (en) 2008-08-12 2009-08-12 Semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080078838A KR100957750B1 (ko) 2008-08-12 2008-08-12 발광 소자
KR10-2008-0078838 2008-08-12

Publications (2)

Publication Number Publication Date
WO2010018985A2 WO2010018985A2 (ko) 2010-02-18
WO2010018985A3 true WO2010018985A3 (ko) 2010-06-17

Family

ID=41669477

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004487 WO2010018985A2 (ko) 2008-08-12 2009-08-12 반도체 발광소자

Country Status (3)

Country Link
US (1) US8415655B2 (ko)
KR (1) KR100957750B1 (ko)
WO (1) WO2010018985A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9768349B2 (en) 2010-01-08 2017-09-19 Sensor Electronic Technology, Inc. Superlattice structure
US8993996B2 (en) 2010-01-08 2015-03-31 Sensor Electronic Technology, Inc. Superlattice structure
US8698127B2 (en) * 2010-01-08 2014-04-15 Sensor Electronic Technology, Inc. Superlattice structure and method for making the same
US9412901B2 (en) 2010-01-08 2016-08-09 Sensor Electronic Technology, Inc. Superlattice structure
US8895959B2 (en) 2010-01-08 2014-11-25 Sensor Electronic Technology, Inc. Superlattice structure and method for making the same
WO2013138571A1 (en) * 2012-03-14 2013-09-19 Sensor Electronic Technology, Inc. Superlattice structure
US10177273B2 (en) 2012-03-29 2019-01-08 Seoul Viosys Co., Ltd. UV light emitting device
US9312447B2 (en) 2012-03-29 2016-04-12 Seoul Viosys Co., Ltd. Near UV light emitting device
WO2013147552A1 (en) * 2012-03-29 2013-10-03 Seoul Opto Device Co., Ltd. Near uv light emitting device
US10164150B2 (en) 2012-03-29 2018-12-25 Seoul Viosys Co., Ltd. Near UV light emitting device
KR101997020B1 (ko) * 2012-03-29 2019-07-08 서울바이오시스 주식회사 근자외선 발광 소자
KR102038885B1 (ko) 2013-05-27 2019-10-31 삼성전자주식회사 반도체 발광소자
CN107086258B (zh) * 2017-04-18 2019-05-14 安徽三安光电有限公司 一种多量子阱结构及其发光二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115610A (ja) * 2001-07-04 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子
JP2007157766A (ja) * 2005-11-30 2007-06-21 Rohm Co Ltd 窒化ガリウム半導体発光素子
JP2008066555A (ja) * 2006-09-08 2008-03-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置と半導体装置の製造法

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Publication number Priority date Publication date Assignee Title
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3719047B2 (ja) 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
EP1403932B1 (en) 2001-07-04 2012-09-05 Nichia Corporation Light emitting nitride semiconductor device
KR100643262B1 (ko) 2004-12-29 2006-11-10 나이트라이드 세마이컨덕터스 코포레이션, 리미티드 질화갈륨계 발광장치
JP2007214221A (ja) * 2006-02-08 2007-08-23 Sharp Corp 窒化物半導体レーザ素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115610A (ja) * 2001-07-04 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子
JP2007157766A (ja) * 2005-11-30 2007-06-21 Rohm Co Ltd 窒化ガリウム半導体発光素子
JP2008066555A (ja) * 2006-09-08 2008-03-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置と半導体装置の製造法

Also Published As

Publication number Publication date
WO2010018985A2 (ko) 2010-02-18
KR100957750B1 (ko) 2010-05-13
US8415655B2 (en) 2013-04-09
KR20100020165A (ko) 2010-02-22
US20110140079A1 (en) 2011-06-16

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