WO2009078482A1 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
WO2009078482A1
WO2009078482A1 PCT/JP2008/073189 JP2008073189W WO2009078482A1 WO 2009078482 A1 WO2009078482 A1 WO 2009078482A1 JP 2008073189 W JP2008073189 W JP 2008073189W WO 2009078482 A1 WO2009078482 A1 WO 2009078482A1
Authority
WO
WIPO (PCT)
Prior art keywords
type gan
gan layer
layer
transparent electrode
type
Prior art date
Application number
PCT/JP2008/073189
Other languages
English (en)
French (fr)
Inventor
Yukio Shakuda
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to JP2009546301A priority Critical patent/JPWO2009078482A1/ja
Priority to EP08861844A priority patent/EP2237382A4/en
Priority to CN2008801218853A priority patent/CN101904064A/zh
Priority to US12/809,233 priority patent/US8411718B2/en
Publication of WO2009078482A1 publication Critical patent/WO2009078482A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer

Abstract

リッジストライプ構造を備えていても、素子の駆動電圧の上昇や内部発熱による寿命低下を防止し、レーザ特性を均一にすることができる窒化物半導体発光素子を提供する。 　ＧａＮ基板１上にｎ型ＧａＮ層２、ｎ型ＡｌＧａＮ層３、活性層４、ｐ型ＡｌＧａＮ層５、ｐ型ＧａＮ層６が順に積層されている。ｐ型ＧａＮ層６上には絶縁膜７と透明電極８が形成されている。透明電極８の一部は、ｐ型ＧａＮ層６と接するように形成されている。導波路形成のためのリッジストライプ部Ｄは、透明膜９で構成されている。透明電極８とｐ型ＧａＮ層６と接触している領域が、ストライプ形状の電流注入領域となる。
PCT/JP2008/073189 2007-12-19 2008-12-19 半導体発光素子 WO2009078482A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009546301A JPWO2009078482A1 (ja) 2007-12-19 2008-12-19 半導体発光素子
EP08861844A EP2237382A4 (en) 2007-12-19 2008-12-19 SEMICONDUCTOR LIGHT EMITTING DEVICE
CN2008801218853A CN101904064A (zh) 2007-12-19 2008-12-19 半导体发光元件
US12/809,233 US8411718B2 (en) 2007-12-19 2008-12-19 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007327927 2007-12-19
JP2007-327927 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078482A1 true WO2009078482A1 (ja) 2009-06-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/073189 WO2009078482A1 (ja) 2007-12-19 2008-12-19 半導体発光素子

Country Status (6)

Country Link
US (1) US8411718B2 (ja)
EP (1) EP2237382A4 (ja)
JP (1) JPWO2009078482A1 (ja)
KR (1) KR20100098565A (ja)
CN (1) CN101904064A (ja)
WO (1) WO2009078482A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004974A1 (ja) * 2008-07-09 2010-01-14 シャープ株式会社 窒化物半導体レーザ素子
WO2012101686A1 (ja) * 2011-01-26 2012-08-02 パナソニック株式会社 半導体発光素子及び発光装置
JP2016048776A (ja) * 2014-08-25 2016-04-07 株式会社東芝 半導体発光素子及びその製造方法
JP6910580B1 (ja) * 2020-11-06 2021-07-28 三菱電機株式会社 光半導体装置およびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103380551A (zh) * 2011-03-17 2013-10-30 松下电器产业株式会社 半导体发光元件以及使用它的发光装置
DE102012106687B4 (de) * 2012-07-24 2019-01-24 Osram Opto Semiconductors Gmbh Steglaser
JP2014170825A (ja) * 2013-03-04 2014-09-18 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
JP6700019B2 (ja) * 2015-10-20 2020-05-27 スタンレー電気株式会社 半導体発光素子
JP6700027B2 (ja) 2015-11-20 2020-05-27 スタンレー電気株式会社 垂直共振器型発光素子
JP6990499B2 (ja) * 2016-04-18 2022-01-12 スタンレー電気株式会社 垂直共振器型発光素子及び垂直共振型発光素子の製造方法
CN109346578B (zh) * 2018-12-04 2023-07-07 西安赛富乐斯半导体科技有限公司 形成半极性氮化镓单量子阱蓝光发光器件的方法
JP2020126995A (ja) * 2019-02-06 2020-08-20 シャープ株式会社 半導体レーザ素子及びその製造方法
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode

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JPH04103187A (ja) * 1990-08-22 1992-04-06 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004974A1 (ja) * 2008-07-09 2010-01-14 シャープ株式会社 窒化物半導体レーザ素子
JP2010021271A (ja) * 2008-07-09 2010-01-28 Sharp Corp 窒化物半導体レーザ素子
WO2012101686A1 (ja) * 2011-01-26 2012-08-02 パナソニック株式会社 半導体発光素子及び発光装置
JP2016048776A (ja) * 2014-08-25 2016-04-07 株式会社東芝 半導体発光素子及びその製造方法
JP6910580B1 (ja) * 2020-11-06 2021-07-28 三菱電機株式会社 光半導体装置およびその製造方法
WO2022097258A1 (ja) * 2020-11-06 2022-05-12 三菱電機株式会社 光半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP2237382A1 (en) 2010-10-06
CN101904064A (zh) 2010-12-01
US20110121337A1 (en) 2011-05-26
US8411718B2 (en) 2013-04-02
EP2237382A4 (en) 2011-01-26
JPWO2009078482A1 (ja) 2011-05-06
KR20100098565A (ko) 2010-09-07

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