WO2010000716A3 - Heterojunction-solarzelle mit absorber mit integriertem dotierprofil - Google Patents

Heterojunction-solarzelle mit absorber mit integriertem dotierprofil Download PDF

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Publication number
WO2010000716A3
WO2010000716A3 PCT/EP2009/058148 EP2009058148W WO2010000716A3 WO 2010000716 A3 WO2010000716 A3 WO 2010000716A3 EP 2009058148 W EP2009058148 W EP 2009058148W WO 2010000716 A3 WO2010000716 A3 WO 2010000716A3
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WO
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Prior art keywords
layer
absorber
solar cell
heterojunction
absorber layer
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PCT/EP2009/058148
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English (en)
French (fr)
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WO2010000716A2 (de
Inventor
Nils-Peter Harder
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Institut Für Solarenergieforschung Gmbh
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Publication date
Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Priority to US13/002,089 priority Critical patent/US20110174374A1/en
Priority to EP09772416A priority patent/EP2291862A2/de
Priority to CN2009801257903A priority patent/CN102084491A/zh
Publication of WO2010000716A2 publication Critical patent/WO2010000716A2/de
Publication of WO2010000716A3 publication Critical patent/WO2010000716A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird eine Heterojunction-Solarzelle (1) und ein Herstellungsverfahren für eine solche vorgeschlagen. Die Heterojunction-Solarzelle weist eine Absorberschicht (3) aus Silizium mit einer Grunddotierung und wenigstens eine Heterojunction-Schicht (5, 7) aus einem dotierten Halbleitermaterial, dessen Bandlücke sich von derjenigen des Siliziums der Absorberschicht unterscheidet, auf. Die Absorberschicht (3) weist hierbei an einer zu der Heterojunction-Schicht (5, 7) gerichteten Grenzfläche (13, 15) eine dotierte Schicht auf, deren Dotierungskonzentration höher ist als die Grunddotierungskonzentration der Absorberschicht. Aufgrund dieses Dotierprofils kann ein Feldeffekt bewirkt werden, der innerhalb der Absorberschicht generierte Ladungsträgerpaare davon abhält, hin zu der Grenzschicht zwischen der Absorberschicht und der Heterojunction-Schicht zu diffundieren und dort zu rekombinieren.
PCT/EP2009/058148 2008-07-01 2009-06-30 Heterojunction-solarzelle mit absorber mit integriertem dotierprofil WO2010000716A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/002,089 US20110174374A1 (en) 2008-07-01 2009-06-30 Heterojunction solar cell with absorber having an integrated doping profile
EP09772416A EP2291862A2 (de) 2008-07-01 2009-06-30 Heterojunction-solarzelle mit absorber mit integriertem dotierprofil
CN2009801257903A CN102084491A (zh) 2008-07-01 2009-06-30 带有具有整合的掺杂分布的吸收体的异质结太阳能电池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008030693.2 2008-07-01
DE102008030693A DE102008030693A1 (de) 2008-07-01 2008-07-01 Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil

Publications (2)

Publication Number Publication Date
WO2010000716A2 WO2010000716A2 (de) 2010-01-07
WO2010000716A3 true WO2010000716A3 (de) 2010-03-11

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Country Link
US (1) US20110174374A1 (de)
EP (1) EP2291862A2 (de)
CN (1) CN102084491A (de)
DE (1) DE102008030693A1 (de)
WO (1) WO2010000716A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
FR2990563B1 (fr) * 2012-05-11 2014-05-09 Apollon Solar Cellule solaire a base de silicium dope de type n
US20130298973A1 (en) * 2012-05-14 2013-11-14 Silevo, Inc. Tunneling-junction solar cell with shallow counter doping layer in the substrate
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
EP4092757A1 (de) 2013-04-03 2022-11-23 Lg Electronics Inc. Verfahren zur herstellung einer solarzelle
CN103346214B (zh) * 2013-07-03 2016-04-06 上海交通大学 一种硅基径向同质异质结太阳电池及其制备方法
DE102013219561A1 (de) 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
EP3026713B1 (de) 2014-11-28 2019-03-27 LG Electronics Inc. Solarzelle und verfahren zur herstellung davon
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
CN108886068B (zh) * 2016-03-23 2022-02-01 松下知识产权经营株式会社 太阳能电池、太阳能电池组件和太阳能电池的制造方法
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
JP2018026388A (ja) 2016-08-08 2018-02-15 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
JP2016219854A (ja) * 2016-09-30 2016-12-22 パナソニックＩｐマネジメント株式会社 光起電力装置及び光電変換装置の製造方法
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US20230178673A1 (en) * 2021-11-26 2023-06-08 Samson Mil'shtein Design and Fabrication Method of Hetero-structured Solar Cell Using Non-Crystalline a-Si/poly-Si

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083955A1 (en) * 2002-03-29 2003-10-09 Ebara Corporation Photovoltaic element and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164072A (ja) * 1987-12-19 1989-06-28 Sanyo Electric Co Ltd アモルフアスシリコン太陽電池
JP3223102B2 (ja) * 1995-06-05 2001-10-29 シャープ株式会社 太陽電池セルおよびその製造方法
JP3902534B2 (ja) * 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
KR101181820B1 (ko) * 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
DE102006027737A1 (de) * 2006-06-10 2007-12-20 Hahn-Meitner-Institut Berlin Gmbh Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083955A1 (en) * 2002-03-29 2003-10-09 Ebara Corporation Photovoltaic element and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2291862A2 *

Also Published As

Publication number Publication date
DE102008030693A1 (de) 2010-01-14
US20110174374A1 (en) 2011-07-21
CN102084491A (zh) 2011-06-01
EP2291862A2 (de) 2011-03-09
WO2010000716A2 (de) 2010-01-07

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