JPS5612787A - Matrix indicator by light emitting diode and manufacture therefor - Google Patents
Matrix indicator by light emitting diode and manufacture thereforInfo
- Publication number
- JPS5612787A JPS5612787A JP8710079A JP8710079A JPS5612787A JP S5612787 A JPS5612787 A JP S5612787A JP 8710079 A JP8710079 A JP 8710079A JP 8710079 A JP8710079 A JP 8710079A JP S5612787 A JPS5612787 A JP S5612787A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- evaporation
- layers
- matrix indicator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000001704 evaporation Methods 0.000 abstract 3
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
PURPOSE:To simplify wiring work and connection work by forming plural light emitting diodes by selective diffusion wherein line electrodes and row electrodes separated by insulating layers are formed on the surface by evaporation. CONSTITUTION:Dotted light emitting diodes 2 which formed plural P layers by selectively diffusing zinc or the like, for example, are formed on a semiconductor substrate 1. Each light emitting diode 2 is arranged by electrically separating by isolation layers 4. A nitriding films 3 are formed on the isolation layers 4. Then, row electrodes 5 are formed in a straight line by evaporation or the like. Line electrodes 6 are also formed in a straight line through oxide films 7 by evaporation or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8710079A JPS5612787A (en) | 1979-07-10 | 1979-07-10 | Matrix indicator by light emitting diode and manufacture therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8710079A JPS5612787A (en) | 1979-07-10 | 1979-07-10 | Matrix indicator by light emitting diode and manufacture therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5612787A true JPS5612787A (en) | 1981-02-07 |
Family
ID=13905521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8710079A Pending JPS5612787A (en) | 1979-07-10 | 1979-07-10 | Matrix indicator by light emitting diode and manufacture therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5612787A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184988A (en) * | 1982-04-02 | 1983-10-28 | ジャン ポラール | Electro-optic image display |
JP2014522126A (en) * | 2011-08-08 | 2014-08-28 | イルジン エルイーディー カンパニー リミテッド | Nitride semiconductor light emitting device having excellent leakage current blocking effect and method for manufacturing the same |
-
1979
- 1979-07-10 JP JP8710079A patent/JPS5612787A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184988A (en) * | 1982-04-02 | 1983-10-28 | ジャン ポラール | Electro-optic image display |
JP2014522126A (en) * | 2011-08-08 | 2014-08-28 | イルジン エルイーディー カンパニー リミテッド | Nitride semiconductor light emitting device having excellent leakage current blocking effect and method for manufacturing the same |
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