CN105355741A - 一种led外延结构及制作方法 - Google Patents
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Abstract
本发明提供一种LED外延结构及制作方法,从下至上依次包括:衬底、第一导电类型半导体层、超晶格、具有V型坑的多量子阱层、空穴注入层以及第二导电类型半导体层,其特征在于:所述空穴注入层呈双六角锥,填满所述V型坑并嵌入第二导电类型半导体层。
Description
技术领域
本发明涉及半导体光电器件领域,尤其涉及一种LED外延结构及制作方法。
背景技术
发光二极管(英文为LightEmittingDiode,简称LED)是一种半导体固体发光器件,其利用半导体PN结作为发光材料,可以直接将电转换为光。现阶段InGaN/GaN发光二极管被视为当今最有潜力的发光源,但是由于P-GaN材料较低的空穴浓度和较低的空穴迁移率,在多量子阱(MQW)中注入深度比较有限,严重限制了GaN基LED发光效率的进一步提升。
目前越来越多理论研究和试验结果,证实V型缺陷是GaN基LED中非常重要的空穴注入通道,极大的提高了空穴注入效率,但是V型坑(Pits)侧壁上生长的量子垒(QB)依会形成势垒,影响空穴向量子阱(QW)中的注入效率,从而影响了发光效率;而且P-GaN层材料较低的空穴浓度依然难以解决。
发明内容
本发明的目的在于:提供一种LED外延结构及制作方法,通过在具有V型坑的多量子阱层中形成双六角锥空穴注入层,可以有效降低半导体材料中的点缺陷密度和位错密度,提供更高浓度的空穴,提高注入效率,改善LED的发光效率。
本发明的第一方面,提供一种高空穴注入效率LED外延结构,该外延结构从下至上依次包括:衬底、第一导电类型半导体层、超晶格、具有V型坑的多量子阱层、空穴注入层以及第二导电类型半导体层,其特征在于:所述空穴注入层呈双六角锥,填满所述V型坑并嵌入第二导电类型半导体层。
优选地,在所述衬底上形成缓冲层,材质优选InAlGaN。
优选地,所述第一导电类型半导体层包括N-GaN层,或者包括U-GaN层及N-GaN层。
优选地,所述第二导电类型半导体层包括P-GaN层,或者包括电子阻挡层以及P-GaN层,或者包括电子阻挡层、P-GaN层以及接触层。
优选地,所述空穴注入层材质为InxGa1-xN(0<x≤1),多量子阱层材质为InyAlzGa1-y-zN(0<y≤1,0≤z≤1,0<y+z≤1),其中x、y满足关系式0<x<y≤1。
优选地,所述空穴注入层的吸收波长短于多量子阱层的发光波长。
本发明的第二方面,再提供一种LED外延结构的制作方法,包括以下工艺步骤:
(1)提供一衬底;
(2)在所述衬底上生长第一导电类型半导体层;
(3)在所述第一导电类型半导体层上生长超晶格;
(4)在所述超晶格上生长具有V型坑的多量子阱层;
(5)在所述V型坑中生长空穴注入层,填满并高出V型坑,直至形成双六角锥空穴注入层;
(6)在所述多量子阱层的顶表面及空穴注入层上生长第二导电类型半导体层。
优选地,在所述衬底上生长缓冲层,材质优选InAlGaN。
优选地,所述第一导电类型半导体层包括N-GaN层,或者包括U-GaN层及N-GaN层。
优选地,所述第二导电类型半导体层包括P-GaN层,或者包括电子阻挡层以及P-GaN层,或者包括电子阻挡层、P-GaN层以及接触层。
优选地,所述空穴注入层材质为InxGa1-xN(0<x≤1),多量子阱层材质为InyAlzGa1-y-zN(0<y≤1,0≤z≤1,0<y+z≤1),其中x、y满足关系式0<x<y≤1。
优选地,所述空穴注入层的吸收波长短于多量子阱层的发光波长。
优选地,还包括在所述多量子阱层的顶表面生长电子阻挡层。
优选地,所述步骤(5)中双六角锥空穴注入层的生长方法包括:采用三维外延生长,反应压力>400tor,温度为750~850℃,无H2环境,生长速率为0.1~0.5μm/h。
优选地,在所述步骤(6)之前,还包括:在所述多量子阱层的顶表面或电子阻挡层的顶表面形成掩膜材料层,然后在所述V型坑中生长双六角锥空穴注入层,再去除掩膜材料层。
优选地,所述形成掩膜材料层的方法为:采用小角度(≤15°)的镀膜沉积方法,避免在V型坑内形成。
优选地,所述掩膜材料层材质为氮化镁(MgxNy)或氮化硅(SixNy)或氧化硅(SixOy)或氧化钛(TixOy)或氧化锆(ZrxOy)或氧化铪(HfxOy)或氧化钽(TaxOy)或其组合。
本发明相对于现有技术,至少包括以下技术效果:
(1)在具有V型坑的多量子阱层中高压三维外延生长空穴注入层,有效降低半导体材料中的点缺陷密度和位错密度;
(2)双六角锥空穴注入层嵌入V型坑及第二导电类型半导体层,有效增大空穴注入面积,提高空穴注入效率。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图中标示:1:衬底;2:缓冲层;3:U-GaN层(未掺杂或非故意掺杂GaN层);4:N-GaN层;5:超晶格;6:多量子阱层;7:电子阻挡层;8:空穴注入层;9:P-GaN层;10:接触层;11:掩膜材料层。
图1为本发明实施例1制作的LED外延结构的剖视示意图。
图2为图1中的双六角锥空穴注入层的立体示意图。
图3~图12为本发明实施例2制作的LED外延结构的工艺步骤流程图。
图13为本发明实施例3制作的LED外延结构的剖视示意图。
具体实施方式
下面结合示意图对本发明进行详细的描述,在进一步介绍本发明之前,应当理解,由于可以对特定的实施例进行改造,因此,本发明并不限于下述的特定实施例。还应当理解,由于本发明的范围只由所附权利要求限定,因此所采用的实施例只是介绍性的,而不是限制性的。除非另有说明,否则这里所用的所有技术和科学用语与本领域的普通技术人员所普遍理解的意义相同。
实施例1
请参照图1和图2,本实施例提供一种LED外延结构,从下至上依次包括:衬底1、缓冲层2、包括U-GaN层3和N-GaN层4的第一导电类型半导体层、超晶格5、具有V型坑的多量子阱层6及电子阻挡层7、双六角锥空穴注入层8、包括P-GaN层9和接触层10的第二导电类型半导体层,其中双六角锥空穴注入层8填满所述V型坑并嵌入第二导电类型半导体层。
具体来说,本实施例的衬底1选用蓝宝石(Al2O3)、SiC、GaAs、GaN、ZnO、Si、GaP、InP以及Ge中的至少一种,优选平片蓝宝石衬底,尽管图中未示出,但是蓝宝石衬底也可以是图形化蓝宝石衬底(PSS),因此,实施例不限于此。
缓冲层2材质选用InAlGaN半导体材料,形成在衬底1上,以减少由于衬底1和第一导电类型半导体层之间的晶格常数差而导致的晶格错配,改善外延生长质量。
U-GaN层3和N-GaN层4构成第一导电类型半导体层,依次形成于缓冲层2上,U-GaN层3能够减少由于衬底1和N-GaN层4之间的晶格常数差导致的晶格错配。而且,U-GaN层3能够增强形成在该层上的半导体层结晶性能。
超晶格5形成于第一导电类型半导体层上,采用重复地交替堆叠InGaN层和GaN层大约15次至大约25次。
具有V型坑的多量子阱层6和电子阻挡层7,依次形成于超晶格5上,多量子阱层可以包括具有InyAlzGa1-y-zN(0<y≤1,0≤z≤1,0<y+z≤1)组成式的半导体材料,通过交替地堆叠多个阱层和多个势垒层形成;电子阻挡层为P型AlGaN半导体材料。
双六角锥空穴注入层8填满并高出V型坑,空穴注入层材质为InxGa1-xN(0<x≤1),优选地,空穴注入层中的In组分小于InyAlzGa1-y-zN量子阱中的In组分,即0<x<y≤1,空穴注入层的吸收波长短于多量子阱层的发光波长,避免P型InGaN材料禁带宽度较大而吸收多量子阱层(MQW)发出的光而造成出光效率降低。
P-GaN层9以及接触层10构成第二导电类型半导体层,形成于电子阻挡层7的顶表面及双六角锥空穴注入层8上,使得双六角锥空穴注入层嵌入第二导电类型半导体层中,从而增大空穴注入面积,提高空穴注入效率。
实施例2
请参照图3~图12,本实施例提供一种LED外延结构制作方法,包括以下工艺步骤:
(1)请参照图3,提供一衬底1,可以选用蓝宝石(Al2O3)、SiC、GaAs、GaN、ZnO、Si、GaP、InP以及Ge中的至少一种,优选图形化蓝宝石衬底(PSS)。
(2)请参照图4,在衬底1上外延生长缓冲层2,优选InAlGaN半导体材料,外延生长方法可以选用MOCVD(金属有机化学气相沉积)方法、CVD(化学气相沉积)方法、PECVD(等离子体增强化学气相沉积)方法、MBE(分子束外延)方法、HVPE(氢化物气相外延)方法,优选MOCVD,但实施例不限于此。
(3)请参照图5,在缓冲层2上依次外延生长U-GaN层3和N-GaN层4,构成第一导电类型半导体层。
(4)请参照图6,在第一导电类型半导体层上继续外延生长超晶格5,采用重复地交替堆叠InGaN层和GaN层大约15次至大约25次。
(5)请参照图7,在超晶格5上外延生长具有V型坑的多量子阱层6和电子阻挡层7,多量子阱层可以选择包括InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)组成式的半导体材料,通过交替地堆叠多个阱层和多个势垒层形成;电子阻挡层为P-AlGaN半导体材料。
(6)请参照图8,在电子阻挡层7的顶表面采用小角度(≤15°)溅射掩膜材料层11,避免在V型坑内形成,掩膜材料层材质可以选用氮化镁(MgxNy)或氮化硅(SixNy)或氧化硅(SixOy)或氧化钛(TixOy)或氧化锆(ZrxOy)或氧化铪(HfxOy)或氧化钽(TaxOy)或其组合,本实施例优选SiO2作为掩膜材料层。
(7)请参照图9,采用三维外延生长方法,继续一次外延生长InGaN空穴注入层8,反应压力控制在400tor以上,生长温度为750~850℃,处于无H2环境,生长速率为0.1~0.5μm/h。由于在掩膜材料层11上无法生长空穴注入层,因此限制于V型坑中外延生长。
(8)请参照图10,二次外延生长InGaN空穴注入层8,直至填满并高出V型坑,形成双六角锥形貌,具备十二个{1-101}面。采用高压三维生长InGaN空穴注入层,可以有效降低半导体材料中的点缺陷密度和位错密度,实现晶格质量的改善和空穴浓度的提高。
(9)请参照图11,采用BOE溶液去除SiO2掩膜材料层11。
(10)请参照图12,在电子阻挡层7的顶表面及双六角锥空穴注入层8上,继续外延生长P-GaN层9以及接触层10构成第二导电类型半导体层,使得双六角锥空穴注入层嵌入第二导电类型半导体层中,从而增大空穴注入面积,提高空穴注入效率。
实施例3
请参照图13,本实施例与实施例2的区别在于:实施例2是在生长空穴注入层8之前,在具有V型坑的多量子阱层6顶表面形成电子阻挡层7,而本实施例是在生长空穴注入层8之后,再在具有V型坑的多量子阱层6顶表面以及长空穴注入层8上生长第二导电类型半导体层。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (11)
1.一种LED外延结构,从下至上依次包括:衬底、第一导电类型半导体层、超晶格、具有V型坑的多量子阱层、空穴注入层以及第二导电类型半导体层,其特征在于:所述空穴注入层呈双六角锥,填满所述V型坑并嵌入第二导电类型半导体层。
2.根据权利要求1所述的一种LED外延结构,其特征在于:所述空穴注入层材质为InxGa1-xN(0<x≤1),多量子阱层材质为InyAlzGa1-y-zN(0<y≤1,0≤z≤1,0<y+z≤1),其中x、y满足关系式0<x<y≤1。
3.根据权利要求1所述的一种LED外延结构,其特征在于:所述空穴注入层的吸收波长短于多量子阱层的发光波长。
4.根据权利要求1所述的一种LED外延结构,其特征在于:所述第一导电类型半导体层包括N-GaN层,或者包括U-GaN层及N-GaN层;所述第二导电类型半导体层包括P-GaN层,或者包括电子阻挡层以及P-GaN层,或者包括电子阻挡层、P-GaN层以及接触层。
5.一种LED外延结构的制作方法,包括以下工艺步骤:
(1)提供一衬底;
(2)在所述衬底上生长第一导电类型半导体层;
(3)在所述第一导电类型半导体层上生长超晶格;
(4)在所述超晶格上生长具有V型坑的多量子阱层;
(5)在所述V型坑中生长空穴注入层,填满并高出V型坑,直至形成双六角锥空穴注入层;
(6)在所述多量子阱层的顶表面及空穴注入层上生长第二导电类型半导体层。
6.根据权利要求5所述的一种LED外延结构的制作方法,其特征在于:还包括在所述多量子阱层的顶表面生长电子阻挡层。
7.根据权利要求5所述的一种LED外延结构的制作方法,其特征在于:所述空穴注入层的吸收波长短于多量子阱层的发光波长。
8.根据权利要求5所述的一种LED外延结构的制作方法,其特征在于:所述步骤(5)中双六角锥空穴注入层的生长方法包括:采用三维外延生长,反应压力>400tor,温度为750~850℃,生长速率为0.1~0.5μm/h。
9.根据权利要求5所述的一种LED外延结构的制作方法,其特征在于:在所述步骤(6)之前,还包括:在所述多量子阱层的顶表面形成掩膜材料层,然后在所述V型坑中生长双六角锥空穴注入层,再去除掩膜材料层。
10.根据权利要求6所述的一种LED外延结构的制作方法,其特征在于:在所述步骤(6)之前,还包括:在所述电子阻挡层的顶表面形成掩膜材料层,然后在所述V型坑中生长双六角锥空穴注入层,再去除掩膜材料层。
11.根据权利要求9或10所述的一种LED外延结构的制作方法,其特征在于:所述形成掩膜材料层方法为:采用小角度(≤15°)的镀膜沉积方法,避免在V型坑内形成。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017076116A1 (zh) * | 2015-11-02 | 2017-05-11 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6433246B2 (ja) * | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | 半導体発光素子 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001307665A (ja) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子およびその製造方法 |
CN101315968A (zh) * | 2008-07-04 | 2008-12-03 | 西安电子科技大学 | GaN多层量子点光电材料的制作方法 |
US20110121357A1 (en) * | 2009-11-25 | 2011-05-26 | Steven Lester | LED with Improved Injection Efficiency |
CN102623594A (zh) * | 2011-01-26 | 2012-08-01 | Lg伊诺特有限公司 | 发光器件 |
US20130021549A1 (en) * | 2010-04-14 | 2013-01-24 | Yoshimasa Fujita | Fluorescent substrate and method for producing the same, and display device |
CN104393124A (zh) * | 2014-11-25 | 2015-03-04 | 天津三安光电有限公司 | 一种发光二极管外延片结构的制备方法 |
CN104425665A (zh) * | 2013-08-28 | 2015-03-18 | 三星电子株式会社 | 包括空穴注入层的半导体发光器件 |
US20150115223A1 (en) * | 2013-10-28 | 2015-04-30 | Seoul Viosys Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN105006503A (zh) * | 2015-06-30 | 2015-10-28 | 聚灿光电科技股份有限公司 | Led外延结构及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6984841B2 (en) * | 2001-02-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting element and production thereof |
KR100525545B1 (ko) * | 2003-06-25 | 2005-10-31 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR101164026B1 (ko) * | 2007-07-12 | 2012-07-18 | 삼성전자주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
US8592800B2 (en) * | 2008-03-07 | 2013-11-26 | Trustees Of Boston University | Optical devices featuring nonpolar textured semiconductor layers |
KR101521259B1 (ko) * | 2008-12-23 | 2015-05-18 | 삼성전자주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
WO2011127050A1 (en) * | 2010-04-05 | 2011-10-13 | The Regents Of The University Of California | Aluminum gallium nitride barriers and separate confinement heterostructure (sch) layers for semipolar plane iii-nitride semiconductor-based light emitting diodes and laser diodes |
US8975165B2 (en) * | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
US20140103359A1 (en) * | 2011-07-28 | 2014-04-17 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device and method for manufacturing same |
US9178114B2 (en) * | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US10164082B2 (en) * | 2012-05-04 | 2018-12-25 | Stc.Unm | Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure |
TWI495083B (zh) * | 2012-07-04 | 2015-08-01 | Phostek Inc | 堆疊半導體裝置及其製作方法 |
CN102945855B (zh) | 2012-11-13 | 2016-08-03 | 京东方科技集团股份有限公司 | 发光显示背板、显示装置和像素界定层的制备方法 |
KR102075644B1 (ko) * | 2013-06-14 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
KR102142709B1 (ko) * | 2013-12-05 | 2020-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
CN103824909B (zh) * | 2014-03-12 | 2016-09-14 | 合肥彩虹蓝光科技有限公司 | 一种提高GaN基LED发光亮度的外延方法 |
KR102212561B1 (ko) * | 2014-08-11 | 2021-02-08 | 삼성전자주식회사 | 반도체 발광 소자 및 반도체 발광 소자 패키지 |
CN105355741B (zh) * | 2015-11-02 | 2017-09-29 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
-
2015
- 2015-11-02 CN CN201510729267.9A patent/CN105355741B/zh active Active
-
2016
- 2016-09-01 WO PCT/CN2016/097802 patent/WO2017076116A1/zh active Application Filing
-
2017
- 2017-12-19 US US15/847,844 patent/US10043944B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001307665A (ja) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子およびその製造方法 |
CN101315968A (zh) * | 2008-07-04 | 2008-12-03 | 西安电子科技大学 | GaN多层量子点光电材料的制作方法 |
US20110121357A1 (en) * | 2009-11-25 | 2011-05-26 | Steven Lester | LED with Improved Injection Efficiency |
US20130021549A1 (en) * | 2010-04-14 | 2013-01-24 | Yoshimasa Fujita | Fluorescent substrate and method for producing the same, and display device |
CN102623594A (zh) * | 2011-01-26 | 2012-08-01 | Lg伊诺特有限公司 | 发光器件 |
CN104425665A (zh) * | 2013-08-28 | 2015-03-18 | 三星电子株式会社 | 包括空穴注入层的半导体发光器件 |
US20150115223A1 (en) * | 2013-10-28 | 2015-04-30 | Seoul Viosys Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN104393124A (zh) * | 2014-11-25 | 2015-03-04 | 天津三安光电有限公司 | 一种发光二极管外延片结构的制备方法 |
CN105006503A (zh) * | 2015-06-30 | 2015-10-28 | 聚灿光电科技股份有限公司 | Led外延结构及其制备方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017076116A1 (zh) * | 2015-11-02 | 2017-05-11 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
CN108475709A (zh) * | 2016-02-25 | 2018-08-31 | 欧司朗光电半导体有限公司 | 用于制造发射辐射的半导体芯片的方法和发射辐射的半导体芯片 |
US10950752B2 (en) | 2016-02-25 | 2021-03-16 | Osram Oled Gmbh | Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip |
DE102016208717B4 (de) | 2016-05-20 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements |
CN108520913A (zh) * | 2018-04-25 | 2018-09-11 | 黎明职业大学 | 一种具有强极化空穴注入层的氮化物半导体发光二极管 |
CN108520913B (zh) * | 2018-04-25 | 2019-10-01 | 黎明职业大学 | 一种具有强极化空穴注入层的氮化物半导体发光二极管 |
CN116190522A (zh) * | 2023-04-26 | 2023-05-30 | 江西兆驰半导体有限公司 | 一种高光效发光二极管外延片及其制备方法 |
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