ATE556158T1 - Verfahren zur herstellung eines selbsttragenden nitridhalbleitersubstrats - Google Patents
Verfahren zur herstellung eines selbsttragenden nitridhalbleitersubstratsInfo
- Publication number
- ATE556158T1 ATE556158T1 AT07849786T AT07849786T ATE556158T1 AT E556158 T1 ATE556158 T1 AT E556158T1 AT 07849786 T AT07849786 T AT 07849786T AT 07849786 T AT07849786 T AT 07849786T AT E556158 T1 ATE556158 T1 AT E556158T1
- Authority
- AT
- Austria
- Prior art keywords
- nitride semiconductor
- self
- substrate
- manufacturing
- supporting substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 150000004767 nitrides Chemical class 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006349756A JP5125098B2 (ja) | 2006-12-26 | 2006-12-26 | 窒化物半導体自立基板の製造方法 |
PCT/JP2007/001351 WO2008078401A1 (ja) | 2006-12-26 | 2007-12-05 | 窒化物半導体自立基板の製造方法及び窒化物半導体自立基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE556158T1 true ATE556158T1 (de) | 2012-05-15 |
Family
ID=39562198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07849786T ATE556158T1 (de) | 2006-12-26 | 2007-12-05 | Verfahren zur herstellung eines selbsttragenden nitridhalbleitersubstrats |
Country Status (8)
Country | Link |
---|---|
US (1) | US9127376B2 (de) |
EP (1) | EP2119815B1 (de) |
JP (1) | JP5125098B2 (de) |
KR (1) | KR20090101208A (de) |
CN (1) | CN101573480B (de) |
AT (1) | ATE556158T1 (de) |
TW (1) | TWI394874B (de) |
WO (1) | WO2008078401A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011077325A (ja) * | 2009-09-30 | 2011-04-14 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体基板の製造方法 |
JP2011201759A (ja) * | 2010-03-05 | 2011-10-13 | Namiki Precision Jewel Co Ltd | 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法 |
JP5416650B2 (ja) * | 2010-05-10 | 2014-02-12 | 日立金属株式会社 | 窒化ガリウム基板 |
JP5518566B2 (ja) * | 2010-05-10 | 2014-06-11 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
JP5830973B2 (ja) * | 2010-12-01 | 2015-12-09 | 三菱化学株式会社 | GaN自立基板および半導体発光デバイスの製造方法 |
JP2012156246A (ja) | 2011-01-25 | 2012-08-16 | Hitachi Cable Ltd | 半導体ウェハ及び半導体デバイスウェハ |
RU2479892C2 (ru) * | 2011-07-25 | 2013-04-20 | Общество с ограниченной ответственностью "Галлий-Н" | Способ изготовления полупроводниковых светоизлучающих элементов |
JP5808208B2 (ja) * | 2011-09-15 | 2015-11-10 | 株式会社サイオクス | 窒化物半導体基板の製造方法 |
WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Iii族窒化物複合基板およびその製造方法、ならびにiii族窒化物半導体デバイスの製造方法 |
WO2017158747A1 (ja) * | 2016-03-16 | 2017-09-21 | 株式会社日立製作所 | エピタキシャル基板の製造方法および半導体装置の製造方法 |
US20200091016A1 (en) * | 2016-12-27 | 2020-03-19 | Sumitomo Chemical Company, Limited | Manufacturing method and inspection method of group-iii nitride laminate, and group-iii nitride laminate |
JP6983570B2 (ja) * | 2017-08-01 | 2021-12-17 | 株式会社サイオクス | 半導体積層物の製造方法、窒化物半導体自立基板の製造方法、半導体積層物および半導体装置 |
WO2019059009A1 (ja) * | 2017-09-25 | 2019-03-28 | 国立大学法人名古屋大学 | 気相成長装置 |
WO2022104074A1 (en) * | 2020-11-13 | 2022-05-19 | The Regents Of The University Of California | Epitaxy-enabled substrate transfer |
CN113345798B (zh) * | 2021-06-01 | 2022-07-12 | 中科汇通(内蒙古)投资控股有限公司 | 一种SiC基片外延制备GaN的方法 |
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US4686682A (en) * | 1984-10-09 | 1987-08-11 | Mitsubishi Denki Kabushiki Kaisha | Discharge excitation type short pulse laser device |
JPS61188983A (ja) | 1985-02-18 | 1986-08-22 | Mitsubishi Electric Corp | 放電励起型短パルスレ−ザ装置 |
JP3624441B2 (ja) * | 1994-12-06 | 2005-03-02 | 株式会社ディスコ | インゴット溝付け装置 |
JPH1053789A (ja) * | 1996-08-12 | 1998-02-24 | Nippei Toyama Corp | ワイヤー切断加工機用水性加工液組成物 |
CN100344004C (zh) * | 1997-10-30 | 2007-10-17 | 住友电气工业株式会社 | GaN单晶衬底及其制造方法 |
KR19990075107A (ko) | 1998-03-17 | 1999-10-05 | 김규현 | 반도체웨이퍼 절단용 블레이드의 구조 및 이를이용한 절단 방법 |
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
JP3788041B2 (ja) * | 1998-06-30 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
JP3788037B2 (ja) * | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
EP1346085B1 (de) * | 2000-11-30 | 2011-10-12 | North Carolina State University | Verfahren zur herstellung von gruppe-iii-metallnitrid-materialien |
US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
JP4558502B2 (ja) * | 2002-12-11 | 2010-10-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | テンプレート型基板の製造方法 |
FR2860248B1 (fr) * | 2003-09-26 | 2006-02-17 | Centre Nat Rech Scient | Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR100533636B1 (ko) * | 2003-12-20 | 2005-12-06 | 삼성전기주식회사 | 질화물 반도체 제조방법 및 그에 따라 제조된 질화물반도체구조 |
JP3888374B2 (ja) * | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
JP4581490B2 (ja) * | 2004-05-31 | 2010-11-17 | 日立電線株式会社 | Iii−v族窒化物系半導体自立基板の製造方法、及びiii−v族窒化物系半導体の製造方法 |
KR20070058465A (ko) * | 2004-08-06 | 2007-06-08 | 미쓰비시 가가꾸 가부시키가이샤 | Ga 함유 질화물 반도체 단결정, 그 제조 방법, 그리고 그결정을 사용한 기판 및 디바이스 |
JP4720125B2 (ja) * | 2004-08-10 | 2011-07-13 | 日立電線株式会社 | Iii−v族窒化物系半導体基板及びその製造方法並びにiii−v族窒化物系半導体 |
JP4525353B2 (ja) * | 2005-01-07 | 2010-08-18 | 住友電気工業株式会社 | Iii族窒化物基板の製造方法 |
JP4735949B2 (ja) * | 2005-04-08 | 2011-07-27 | 日立電線株式会社 | Iii−v族窒化物半導体結晶の製造方法およびiii−v族窒化物半導体基板の製造方法 |
JP2006290677A (ja) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法 |
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2006
- 2006-12-26 JP JP2006349756A patent/JP5125098B2/ja active Active
-
2007
- 2007-12-05 CN CN200780048302.4A patent/CN101573480B/zh active Active
- 2007-12-05 AT AT07849786T patent/ATE556158T1/de active
- 2007-12-05 US US12/448,272 patent/US9127376B2/en active Active
- 2007-12-05 KR KR20097013496A patent/KR20090101208A/ko active Search and Examination
- 2007-12-05 WO PCT/JP2007/001351 patent/WO2008078401A1/ja active Application Filing
- 2007-12-05 EP EP20070849786 patent/EP2119815B1/de active Active
- 2007-12-10 TW TW96147114A patent/TWI394874B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20090101208A (ko) | 2009-09-24 |
EP2119815A4 (de) | 2010-05-26 |
TWI394874B (zh) | 2013-05-01 |
CN101573480A (zh) | 2009-11-04 |
JP2008156189A (ja) | 2008-07-10 |
EP2119815A1 (de) | 2009-11-18 |
WO2008078401A1 (ja) | 2008-07-03 |
CN101573480B (zh) | 2014-08-13 |
EP2119815B1 (de) | 2012-05-02 |
US9127376B2 (en) | 2015-09-08 |
TW200833884A (en) | 2008-08-16 |
JP5125098B2 (ja) | 2013-01-23 |
US20100001376A1 (en) | 2010-01-07 |
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