WO2008143166A1 - Iii族窒化物半導体結晶の製造方法、iii族窒化物半導体基板および半導体発光デバイス - Google Patents
Iii族窒化物半導体結晶の製造方法、iii族窒化物半導体基板および半導体発光デバイス Download PDFInfo
- Publication number
- WO2008143166A1 WO2008143166A1 PCT/JP2008/059018 JP2008059018W WO2008143166A1 WO 2008143166 A1 WO2008143166 A1 WO 2008143166A1 JP 2008059018 W JP2008059018 W JP 2008059018W WO 2008143166 A1 WO2008143166 A1 WO 2008143166A1
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- WIPO (PCT)
- Prior art keywords
- nitride
- iii
- group
- element belonging
- semiconductor
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title abstract 7
- 150000004767 nitrides Chemical class 0.000 title abstract 6
- 239000013078 crystal Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/600,352 US8269251B2 (en) | 2007-05-17 | 2008-05-16 | Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device |
KR1020097026018A KR101488545B1 (ko) | 2007-05-17 | 2008-05-16 | Iii 족 질화물 반도체 결정의 제조 방법, iii 족 질화물 반도체 기판 및 반도체 발광 디바이스 |
EP08764307A EP2154272A4 (en) | 2007-05-17 | 2008-05-16 | METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR CRYSTAL OF AN ELEMENT BELONGING TO GROUP III, A NITRIDE-FORMED SEMICONDUCTOR SUBSTRATE OF A GROUP III ELEMENT, AND A SEMICONDUCTOR LIGHT EMITTING DEVICE |
US13/571,782 US20120305983A1 (en) | 2007-05-17 | 2012-08-10 | Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device |
US13/932,249 US9112096B2 (en) | 2007-05-17 | 2013-07-01 | Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-131955 | 2007-05-17 | ||
JP2007131955 | 2007-05-17 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/600,352 A-371-Of-International US8269251B2 (en) | 2007-05-17 | 2008-05-16 | Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device |
US13/571,782 Continuation US20120305983A1 (en) | 2007-05-17 | 2012-08-10 | Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008143166A1 true WO2008143166A1 (ja) | 2008-11-27 |
Family
ID=40031868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/059018 WO2008143166A1 (ja) | 2007-05-17 | 2008-05-16 | Iii族窒化物半導体結晶の製造方法、iii族窒化物半導体基板および半導体発光デバイス |
Country Status (5)
Country | Link |
---|---|
US (3) | US8269251B2 (ja) |
EP (1) | EP2154272A4 (ja) |
JP (4) | JP2008308401A (ja) |
KR (1) | KR101488545B1 (ja) |
WO (1) | WO2008143166A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9890474B2 (en) | 2013-02-22 | 2018-02-13 | Mitsubishi Chemical Corporation | Crystal of nitride of group-13 metal on periodic table, and method for producing the same |
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JP5332168B2 (ja) | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
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JP2009234906A (ja) * | 2008-03-03 | 2009-10-15 | Mitsubishi Chemicals Corp | 窒化物半導体結晶とその製造方法 |
JP5461859B2 (ja) * | 2008-03-28 | 2014-04-02 | Jfeミネラル株式会社 | AlNバルク単結晶及び半導体デバイス並びにAlN単結晶バルクの製造方法 |
US9404197B2 (en) * | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
CN102067286B (zh) * | 2009-03-06 | 2013-03-06 | 松下电器产业株式会社 | 氮化物半导体的晶体生长方法和半导体装置的制造方法 |
CN102369590A (zh) * | 2009-04-03 | 2012-03-07 | 松下电器产业株式会社 | 氮化物半导体的结晶生长方法和半导体装置的制造方法 |
KR20120036816A (ko) * | 2009-06-01 | 2012-04-18 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 반도체 결정 및 그 제조 방법 |
JP5789929B2 (ja) * | 2010-08-03 | 2015-10-07 | 住友電気工業株式会社 | Iii族窒化物結晶の成長方法 |
KR101852519B1 (ko) * | 2010-10-29 | 2018-04-26 | 가부시키가이샤 도쿠야마 | 광학 소자의 제조 방법 |
EP2633103B1 (en) * | 2010-10-29 | 2015-07-29 | The Regents of The University of California | Ammonothermal growth of group-iii nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other |
JP5480169B2 (ja) | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | レーザ加工方法 |
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US9834859B2 (en) | 2012-01-11 | 2017-12-05 | Osaka University | Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device |
EP2832901A4 (en) * | 2012-03-30 | 2015-07-08 | Mitsubishi Chem Corp | GROUP 13 METAL NITRIDE CRYSTALS OF THE PERIODIC TABLE OF ELEMENTS AND PROCESS FOR THE MANUFACTURE OF GROUP 13 METAL NITRIDE CRYSTALS OF THE PERIODIC TABLE OF ELEMENTS |
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US9708733B2 (en) * | 2013-06-10 | 2017-07-18 | Tokuyama Corporation | Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy |
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WO2016125890A1 (ja) * | 2015-02-06 | 2016-08-11 | 三菱化学株式会社 | GaN単結晶およびGaN単結晶製造方法 |
JP6135954B2 (ja) | 2015-10-22 | 2017-05-31 | ウシオ電機株式会社 | 窒化物半導体発光素子 |
JP6365992B2 (ja) * | 2016-03-25 | 2018-08-01 | パナソニックIpマネジメント株式会社 | Iii族窒化物結晶製造方法及びramo4基板 |
JP6861490B2 (ja) * | 2016-09-07 | 2021-04-21 | 株式会社サイオクス | 窒化物結晶基板の製造方法および結晶成長用基板 |
JP7046496B2 (ja) | 2017-03-28 | 2022-04-04 | 古河機械金属株式会社 | Iii族窒化物半導体基板の製造方法、iii族窒化物半導体基板、及び、バルク結晶 |
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JP7182262B2 (ja) | 2018-12-10 | 2022-12-02 | パナソニックIpマネジメント株式会社 | Ramo4基板およびその製造方法、ならびにiii族窒化物半導体 |
JP7228467B2 (ja) * | 2019-05-27 | 2023-02-24 | 信越化学工業株式会社 | Iii族化合物基板の製造方法及びiii族化合物基板 |
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- 2008-05-16 JP JP2008129077A patent/JP2008308401A/ja not_active Withdrawn
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2010
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2012
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US9890474B2 (en) | 2013-02-22 | 2018-02-13 | Mitsubishi Chemical Corporation | Crystal of nitride of group-13 metal on periodic table, and method for producing the same |
US10309038B2 (en) | 2013-02-22 | 2019-06-04 | Mitsubishi Chemical Corporation | Crystal of nitride of group-13 metal on periodic table, and method for producing the same |
US10995421B2 (en) | 2013-02-22 | 2021-05-04 | Mitsubishi Chemical Corporation | Crystal of nitride of group-13 metal on periodic table, and method for producing the same |
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JP5282766B2 (ja) | 2013-09-04 |
JP2010222254A (ja) | 2010-10-07 |
US20130320394A1 (en) | 2013-12-05 |
JP5725086B2 (ja) | 2015-05-27 |
US9112096B2 (en) | 2015-08-18 |
EP2154272A4 (en) | 2011-04-27 |
JP2010222253A (ja) | 2010-10-07 |
JP4586936B2 (ja) | 2010-11-24 |
US8269251B2 (en) | 2012-09-18 |
KR101488545B1 (ko) | 2015-02-02 |
JP2013230972A (ja) | 2013-11-14 |
EP2154272A1 (en) | 2010-02-17 |
JP2008308401A (ja) | 2008-12-25 |
KR20100017798A (ko) | 2010-02-16 |
US20120305983A1 (en) | 2012-12-06 |
US20100148212A1 (en) | 2010-06-17 |
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