JP4486506B2 - ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長 - Google Patents
ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims description 117
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 101
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 229910017083 AlN Inorganic materials 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
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- 239000012071 phase Substances 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
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- 238000012876 topography Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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Description
本出願は、本発明の譲受人に譲渡された以下の同時係属の米国特許仮出願の優先権を主張する。
本発明は半導体材料、方法および素子に関し、より具体的にはハイドライド気相成長法(HVPE)による転位密度の低い無極性窒化ガリウム(GaN)の成長に関する。
(注:本出願は多くの異なる特許、出願明細書および/または刊行物を参照しており、これらは、1から順に付けた参考文献番号を用いて本明細書に記載する。これらの参考文献番号順に並べた種々の刊行物のリストを「参考文献」とタイトルをつけたセクションに示す。これらの刊行物は、それぞれ参照として本明細書中に組込まれる。)
本発明は、LEOを使用するHVPE成長の無極性a面GaN膜の貫通転位密度を低減させるものである。低い成長圧力を用い、少量の水素を含むキャリアガスを利用することによって、異種基板から直接無極性GaN膜を横方向成長させることができる。種々の手段の一手段によってパターンマスクを基板上に付着させる。次に、基板をHVPEリアクタに載置し、基板材料が露出している領域からのみa−GaN膜を成長させ、マスク上および基板表面上にわたって横方向に広げる。
図2は本発明の好ましい実施形態による平坦な無極性a面GaN膜のエピタキシャル横方向オーバーグロースを実施する方法を示すフローチャートである。これらの工程は、基板上に堆積されているマスクをパターニングする工程(下記のブロック200〜208)、およびハイドライド気相成長法を使用し基板からGaN膜のエピタキシャル横方向オーバーグロースを実施する(下記のブロック210〜224)工程を含み、パターニングされたマスクによって覆われていない基板部分上でのみGaN膜は核を形成し、GaN膜は、パターニングされたマスクの開口部を通って垂直に成長し、次にGaN膜は、パターニングされたマスク上および基板の表面上にわたって横方向に広がる。
本発明者らによる実験では、種々の誘電性マスクパターンを利用し、8〜125μm厚の完全に接合している無極性GaN膜を作製した。オーバーグロース領域のナノメータースケールのピット密度は3×106 cm-2未満であった。これに対し、直接成長させたa面GaN膜では〜1010cm-2であった。オーバーグロース部分の陰極線ルミネセンス(CL)は、ウィング部分と比較すると、光度が4倍増加していることがわかった。X線ロッキングカーブをみると、測定感度の範囲内では、膜にはウィングの傾斜はないことがわかった。非LEOのa面GaNの基底面積層欠陥密度および貫通転位密度は、それぞれ105 cm-1、109 cm-2を示す一方、LEO材料には、実質上拡張型欠陥がなかった。ウィング領域の基底面積層欠陥および貫通転位密度は、それぞれサンプリング限界の約〜5×106 cm-2および3×103 cm-1以下であった。
以下の参考文献を参照として本明細書中に組み込む。
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本発明の好ましい実施形態の説明をまとめる。以下、本発明を実施するためのいくつかの代替実施形態について記載する。
Claims (23)
- 平坦な無極性窒化ガリウム(GaN)膜のエピタキシャル横方向オーバーグロースを実施する方法であって、
(a)基板に堆積されているマスクをパターニングする工程、および
(b)ハイドライド気相成長法を使用して前記基板から前記平坦な無極性GaN膜のエピタキシャル横方向オーバーグロースを実施する工程を含み、前記パターニングされたマスクによって覆われていない前記基板の部分上にのみ前記平坦な無極性GaN膜は核を形成し、前記平坦な無極性GaN膜は、前記パターニングされたマスクの開口部を通って垂直に成長し、次に前記平坦な無極性GaN膜は、前記パターニングされたマスク上および前記基板の表面上にわたって横方向に広がることにより、平坦な無極性GaN面である上面となることを特徴とする方法。 - 前記エピタキシャル横方向オーバーグロースは、ほぼ大気圧(760Torr)またはそれ以下の成長圧力を利用し、少量の水素を含むキャリアガスを利用することを特徴とする請求項1に記載の方法。
- 前記成長圧力が300Torr未満であることを特徴とする請求項2に記載の方法。
- 前記成長圧力が5から100Torrの範囲であることを特徴とする請求項3に記載の方法。
- 前記キャリアガスが主に水素であることを特徴とする請求項2に記載の方法。
- 前記キャリアガスが、水素と、窒素、アルゴンまたはヘリウムとの混合物を含むことを特徴とする請求項2に記載の方法。
- 前記エピタキシャル横方向オーバーグロースは前記平坦な無極性GaN膜中の貫通転位密度を低減させることを特徴とする請求項1に記載の方法。
- 前記基板はサファイアを含むことを特徴とする請求項1に記載の方法。
- 前記パターニングされたマスクは金属材料から成ることを特徴とする請求項1に記載の方法。
- 前記パターニングされたマスクは誘電材料から成ることを特徴とする請求項1に記載の方法。
- 前記パターニングされたマスクは、該マスクの下にある前記基板にアクセスできるようなアパーチャまたはストライプを含む二酸化ケイ素(SiO2 )マスクであることを特徴とする請求項1に記載の方法。
- 前記パターニング工程は、
前記基板に二酸化ケイ素(SiO2 )膜を堆積する工程、
前記二酸化ケイ素膜上にフォトレジスト層をパターニングする工程、
パターニングされた前記フォトレジスト層によって露出している二酸化ケイ素膜のすべての部分をエッチングして取り除く工程、
前記フォトレジスト層の残渣部分を除去する工程、および
前記基板を洗浄する工程
を含むことを特徴とする請求項1に記載の方法。 - 前記基板は、GaN、窒化アルミニウム(AlN)、窒化アルミニウムガリウム(AlGaN)または他の薄膜のテンプレート層で覆われることを特徴とする請求項1に記載の方法。
- 前記基板は自立a面GaN、a面窒化アルミニウム(AlN)またはa面窒化アルミニウムガリウム(AlGaN)のウェハであることを特徴とする請求項1に記載の方法。
- 前記基板は、低温または成長温度で堆積された核形成層で覆われることを特徴とする請求項1に記載の方法。
- 請求項1に記載の方法を使用して製造される自立a面GaN膜または基板。
- 請求項1に記載の方法を使用して製造される素子。
- 前記素子はレーザーダイオード、発光ダイオードまたはトランジスタであることを特徴とする請求項17に記載の素子。
- 基板から成長させる平坦な無極性窒化ガリウム(GaN)膜のエピタキシャル横方向オーバーグロースであって、
(a)基板に堆積されている誘電性マスクをパターニングする工程、および
(b)ハイドライド気相成長法を使用して前記基板から前記平坦な無極性GaN膜のエピタキシャル横方向オーバーグロースを実施する工程を含み、前記パターニングされた誘電性マスクによって露出している前記基板の部分上でのみ前記平坦な無極性GaN膜は核を形成し、前記平坦な無極性GaN膜は、前記パターニングされた誘電性マスクの開口部を通って垂直に成長し、次に前記GaN膜は、前記パターニングされた誘電性マスク上および前記基板の表面上にわたって横方向に広がることにより、平坦な無極性GaN面である上面となる工程
を含むプロセスを使用して得られることを特徴とするエピタキシャル横方向オーバーグロース。 - 前記平坦な無極性GaN膜は、鋭い垂直の側壁を作り出すために、前記パターニングされたマスク上および前記基板の表面上にわたって横方向に広がることを特徴とする請求項1に記載の方法。
- 前記平坦な無極性GaN膜は、鋭い垂直の側壁を作り出すために、前記パターニングされた誘電性マスク上および前記基板の表面上にわたって横方向に広がることを特徴とする請求項19に記載のエピタキシャル横方向オーバーグロース。
- 前記平坦な無極性GaNは、自立無極性GaN基板を形成するのに十分な厚さに成長されることを特徴とする請求項1に記載の方法。
- 前記平坦な無極性GaN膜は、自立無極性GaN基板を形成するのに十分な厚さであることを特徴とする請求項19に記載のエピタキシャル横方向オーバーグロース。
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TWI369784B (ja) | 2012-08-01 |
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EP1576671A4 (en) | 2006-10-25 |
JP5252465B2 (ja) | 2013-07-31 |
TW201108302A (en) | 2011-03-01 |
KR101372698B1 (ko) | 2014-03-11 |
TW200423397A (en) | 2004-11-01 |
JP2006514780A (ja) | 2006-05-11 |
JP2010004074A (ja) | 2010-01-07 |
US20070126023A1 (en) | 2007-06-07 |
WO2004061909A1 (en) | 2004-07-22 |
US7220658B2 (en) | 2007-05-22 |
TWI433313B (zh) | 2014-04-01 |
JP2006510227A (ja) | 2006-03-23 |
EP1576671A1 (en) | 2005-09-21 |
KR20050088437A (ko) | 2005-09-06 |
WO2004061969A1 (en) | 2004-07-22 |
US20120074425A1 (en) | 2012-03-29 |
US7847293B2 (en) | 2010-12-07 |
KR101086155B1 (ko) | 2011-11-25 |
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