TWI445054B - 藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵 - Google Patents
藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 129
- 229910002601 GaN Inorganic materials 0.000 title claims description 121
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 48
- 208000012868 Overgrowth Diseases 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 230000006872 improvement Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 15
- 238000005452 bending Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 72
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 238000000151 deposition Methods 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000005136 cathodoluminescence Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 7
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
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- 229910052733 gallium Inorganic materials 0.000 description 4
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- 238000011160 research Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 150000004678 hydrides Chemical class 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- -1 but not limited to Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- 238000001356 surgical procedure Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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Description
本申請案主張下列同在申請中及共同受讓之美國臨時專利申請案的優先權:序號60/433,843,標題為「藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵(GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)」,於2002年12月16日由Benjamin A. Haskell、Michael D. Craven、Paul T. Fini、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.93-US-P1;及序號60/433,844,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵之技術(TECHNIQUE FOR THE GROWTH OF PLANAR,NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)」,於2002年12月16日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-US-P1;此二申請案皆以引用之方式併入本文。
本申請案係與同在申請中且共同受讓之國際申請案編號PCT/US03/21916,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵(GROWTH OF PLANAR,NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)」相關,其係在2003年7月15日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-WO-U1,此申請案主張同在申請中且共同受讓之美國臨時專利申請案序號60/433,844,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵之技術(TECHNIQUE FOR THE GROWTH OF PLANAR,NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)」之優先權,其係在2002年12月16日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-US-P1,以及美國臨時專利申請案序號60/433,843,標題為「藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵(GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)」,於2002年12月16日由Benjamin A. Haskell、Michael D. Craven、Paul T. Fini、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.93-US-P1。這些申請案以引用的方式併入本文。
本發明係關於半導體材料、方法、及裝置,且更特定言之係關於藉由氫化物汽相磊晶術(HVPE)生長減少差排密度之非極性氮化鎵(GaN)。
(注意:本申請案參照在整個說明書中以一或多個參考文獻編號指示的一些不同專利、申請案及/或公開案。根據這些參考文獻編號排列的這些不同公開案之表列可見於後面標題為「參考文獻」的章節中。每一該等公開案以引用的方式併入本文。)
氮化鎵(GaN)及其結合鋁或銦之三元及四元化合物(AlGaN、InGaN、AlInGaN)用於製造可見光及紫外光光電裝置與高功率電子裝置的效用已經充分確立。(見參考文獻1-3。)這些裝置典型上係藉由包括分子束磊晶術(MBE)、金屬有機化學氣相沉積(MOCVD)或氫化物汽相磊晶術(HVPE)之生長技術對基板取向而逐層地磊晶生長。
GaN及其合金在六邊形纖鋅礦(wrtzite)晶體結構中最為安定,在此結構中晶體藉相對於彼此旋轉120°之二(或三)個等效基礎面軸(a-軸)敘述,所有軸皆垂直於唯一的c-軸。圖1為一般六邊形纖鋅礦晶體結構100及與其中示出之該等軸110、112、114、116相關的平面102、104、106、108之示意圖。
因在纖鋅礦晶體結構100中之鎵及氮原子位置的結果,垂直c軸的任何原子平面將只含有一種類型的原子。當沿著c軸由一平面前進到另一平面時,每一平面將只含有一種類型的原子,不是Ga就是N。為了維持電中性,GaN晶體以一個只含有氮原子的c面(N面)及一個只含有鎵原子的c面(Ga面)結束。結果,GaN晶體沿著c軸極化。這些晶體的自發極化為整體性質且取決於晶體的結構及組成而定。
由於生長平面Ga面c平面比較容易,因而實質上所有GaN基裝置皆係平行於極性c軸生長。此生長方向的負面結果為每一層材料將因晶體之自發極化而導致電子及電洞分離至層的相對面。此外,在相鄰層間界面處之應變產生壓電極化,造成在量子異質結構中進一步之電荷分離。這類極化效應會減少電子與電洞交互作用的可能性,而這是發光光電裝置工作的必要條件。咸信若可除去c軸取向裝置所固有之極化效應,則GaN發光裝置的效率將提高。
一種去除GaN光電裝置中壓電極化效應之可行方法為在晶體的非極性平面上生長裝置。(見參考文獻4-6。)這樣的平面含有相同數目的Ga及N原子且為電中性。此外,隨後的非極性層彼此為等效的,故整個晶體將不會沿著生長方向極化。這樣在GaN中等效對稱非極性平面之一族為{110}族,總稱為a平面。在電子裝置(像高電子移動率電晶體)或光電裝置(如可見光及紫外光雷射二極體與發光二極體)上,在a平面基板上生長可產生比在c平面GaN上生長之等效裝置明顯提高之裝置性能。
無法取得GaN之大晶體,故不可能簡單切割晶體而呈現供隨後裝置再成長用之表面。所有GaN膜最初係異質磊晶地生長(即在提供與GaN合理晶格匹配之外來基板上)。近年來,一些研究群體已發現可利用HVPE作為異質磊晶沉積厚度足夠(>200 μm)之c平面GaN膜之方法以移除外來基板,而產生隨後可用於藉MBE及MOCVD均質磊晶裝置再生長之獨立式GaN基板。(見參考文獻7-8。)
HVPE有生長速率比MOCVD大一至二個數量級且比MBE大多至三個數量級之優點,此為使其對基板製造成為具吸引力技術的優點。
最近已展示藉由HVPE生長平面的a平面GaN,如下列專利案中所述:同在申請中且共同受讓之國際申請案編號PCT/US03/2/9/6,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵」,其係在2003年7月15日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-WO-U1,此申請案主張同在申請中且共同受讓之美國臨時專利申請案序號60/433,844,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵之技術」之優先權,其係在2002年12月16日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-US-P1;以及美國臨時專利申請案序號60/433,843,標題為「藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵」,其係在2002年12月16日由Benjamin A. Haskell、Michael D. Craven、Paul T. Fini、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.93-US-P1;這些申請案以引用的方式併入本文。(見參考文獻9-10。)
儘管此研究工作呈現能夠實現非極性GaN裝置生長之技術,但在直接生長之a-GaN膜中較高的缺陷密度比藉由在完美基板上均質磊晶生長所可達成者降低了隨後生長裝置的效率。對減少GaN膜中之差排密度以改良裝置之性能有持續增加的研究。
受到關注的廣泛缺陷之兩種主要形式為穿過差排及堆疊錯誤。達到減少極性c平面GaN膜中差排及堆疊錯誤密度之主要方法為使用種種橫向過生長技術,包括橫向磊晶過生長(LEO、ELO或ELOG)、選擇性區域磊晶術及PENDEO磊晶術。這些方法的本質為藉由讓橫向生長比垂直生長更有利而阻礙或阻止差排在垂直於膜表面之方向蔓延。這些差排減少技術已藉由HVPE及MOCVD廣泛地發展用於c平面GaN生長。(見參考文獻11-18。)
直到最近才經展示將GaN橫向生長技術用於a平面膜。Craven等人成功地透過MOCVD在薄a平面GaN模板層上使用介電遮罩進行LEO。(見參考文獻19。)
然而,先前尚未達成a平面GaN之基於HVPE的LEO。因此,技藝中有需要生長高品質、低缺陷密度、非極性、a平面{110} GaN膜之方法。更明確地,技藝中有需要使用藉由HVPE之橫向過生長來生長這類GaN膜之方法。本發明滿足此需求。
本發明揭示一種進行平面、非極性、a平面GaN膜之橫向磊晶過生長的方法,其包括:(a)將沉積在基板上之遮罩圖案化,及(b)使用氫化物汽相磊晶術進行自基板起始之GaN膜之橫向磊晶過生長,其中該GaN膜只在未經圖案化遮罩覆蓋的部分上生成晶核,GaN膜垂直生長穿過圖案化遮罩中之開口,且隨後GaN膜在圖案化遮罩上橫向擴展並跨越基板表面。橫向磊晶過生長減少GaN膜中的穿過差排密度。
在下面之較佳具體實施例敘述中,參照構成本發明一部分的附圖,且其中舉例展示可實施本發明的一特定具體實施例。應了解可利用其他具體實施例且可做結構之改變而不偏離本發明的範圍。
總論
本發明使用LEO減少在HVPE生長之非極性、a平面GaN膜中之穿過差排密度。藉由利用減低的生長壓力及含一部分氫之載氣,可得到直接自外來基板起始之非極性GaN膜之橫向生長。透過種種方法中之一種將圖案化遮罩施用至基板上。然後將基板載入HVPE反應器中,且a-GaN膜只由經暴露基板材料之區域生長及在遮罩上方橫向擴展並跨過基板表面。
與直接在均一基板上生長之非極性GaN膜相較,本發明使缺陷明顯減少及改進膜品質。這類減少缺陷密度之非極性GaN膜將提供隨後生長在藉由此技術生長之模板膜上之電子、光電及機電裝置之改進。此外,本文所述之橫向過生長膜進一步提供可在經去結合形成獨立式基板之厚的非極性GaN膜中減少差排密度之極佳方法。
用於減少差排之本發明較佳具體實施例包括:
1.使用圖案化基板,如具其中含有允許通達底下藍寶石基板之孔隙或條紋的二氧化矽(SiO2
)遮罩之r平面藍寶石(Al2
O3
)基板。
2.在可於藍寶石基板上產生平面非極性GaN膜之條件下生長非極性GaN膜。
方法之步驟
圖2為說明根據本發明之較佳具體實施例進行平面、非極性、a平面GaN膜之橫向磊晶過生長之方法的流程圖。這些步驟包括將沉積在基板上之遮罩圖案化(以下之方塊200-208)及使用氫化物汽相磊晶術進行自基板起始之GaN膜之橫向磊晶過生長(以下之方塊210-224),其中GaN膜只在未被圖案化遮罩覆蓋的基板部分上生成晶核,GaN膜穿過圖案化遮罩中的開口垂直生長,且隨後GaN膜在圖案化遮罩上方橫向擴展及跨越基板表面。
方塊200呈現在430μm厚之拋光r平面(102)藍寶石基板上沉積1300Å厚之SiO2
膜之步驟,其中SiO2
膜提供介電遮罩之基礎。雖然在較佳具體實施例中,圖案化遮罩為介電質且基板為r平面藍寶石基板,但亦可使用其他材料,如以金屬材料作為圖案化遮罩或以碳化矽(SiC)作為基板。
方塊202呈現在SiO2
膜上沉積光阻層並使用習知之微影加工步驟將經沉積之光阻層圖案化之步驟。在一具體實施例中,圖案包括以5 μm寬開口分隔之35 μm寬之條紋。
方塊204呈現藉由將基板浸泡在緩衝氫氟(HF)酸中兩分鐘而將經圖案化光阻層暴露之任何部分之SiO2
膜蝕刻掉之步驟。
方塊206呈現使用丙酮移除光阻層之剩餘部分之步驟。
方塊208呈現使用丙酮、異丙醇及去離子水清潔基板之步驟。
在乾燥之後,以包括具有以5 μm寬開口分隔之35 μm寬條紋的圖案化SiO2
膜的圖案化遮罩覆蓋基板。
隨後之方塊呈現使用HVPE進行自基板起始之GaN膜之橫向磊晶過生長之步驟,其中GaN膜只在經圖案化遮罩暴露的基板部分上成成晶核,GaN膜穿過圖案化遮罩中之開口垂直生長,且隨後GaN膜在圖案化遮罩上方橫向擴展並跨越基板表面,最後與鄰近之GaN條紋合併。橫向磊晶過成長利用約大氣壓力(760托)之降低的生長壓力及含一部分氫之載氣。
這些步驟及其生長參數更詳細地敘述在下列專利案中:同在申請中且共同受讓之國際申請案編號PCT/US03/2/9/6,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵」,其在2003年7月15日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck 及Shuji Nakamura申請,律師事務所檔案號30794.94-WO-U1,此申請案主張同在申請中且共同受讓之美國臨時專利申請案序號60/433,844,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵之技術」之優先權,其在2002年12月16日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-US-P1;以及美國臨時專利申請案序號60/433,843,標題為「藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵」,其在2002年12月16日由Benjamin A. Haskell、Michael D. Craven、Paul T. Fini、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.93-US-P1;這些申請案以引用的方式併入本文。亦見參考文獻9-10。
方塊210呈現將基板載入反應器中之步驟。
方塊212呈現將反應器抽真空並將反應器回填純氮(N2
)氣體以降低其中氧含量之步驟。經常重複此步驟以進一步降低反應器中之殘留氧含量。
方塊214呈現在H2
及N2
之混合物流經系統中所有通道下加熱反應器至約1040℃之生長溫度之步驟。
方塊216呈現一旦反應器達到生長溫度時即氮化藍寶石基板之步驟,其中該氮化步驟包括添加無水氨(NH3
)至反應器中之氣體流以氮化藍寶石基板之表面。
方塊218呈現減少反應器壓力至期望沉積壓力之步驟。在較佳具體實施例中,期望的沉積壓力係低於大氣壓力(760托)且一般低於300托。更明確而言,期望的沉積壓力可限制在5-100托之範圍內且可設定在76托。
方塊220呈現起始至鎵(Ga)源之氣態氯化氫(HCl)流,以開始直接在藍寶石基板上生長a平面GaN膜,而不使用任何低溫緩衝或晶核生成層之步驟。習知之金屬源HVPE包括鹵素化合物,如(但不限於)氣態HCl,與金屬Ga在超過700℃之溫度下形成單氯化鎵(GaCl)的原位反應。
方塊222呈現藉由在反應器中之一或多個氣流中包含至少一部分氫(H2
)之載氣將GaCl輸送至基板之步驟。在一具體實施例中,載氣可主要為氫,然而在其他具體實施例中,載氣包括氫及氮之混合物、氬、氦或其他惰性氣體。在輸送至基板中、在基板處或在排出氣流中,GaCl與NH3
反應形成GaN膜。在基板處發生之反應有可能在基板上產生GaN膜,藉此導致晶體生長。此方法之典型V/III比例為1-50。注意NH3
/HCl比例不需要等於V/III比例,此係因在Ga源下游之補充HCl注入或HCl與Ga源之不完全反應之故。該形成之GaN膜係厚度為至少200μm之結合膜。
方塊224呈現在經過一段所需成長時間後,中斷氣態HCl流、降低反應器之溫度至室溫及將反應器壓力回復至大氣壓力之步驟。系統壓力在此冷卻相期間可為大氣壓或減壓。中斷步驟進一步包括在氣體流中包含NH3
以防止在降低反應器溫度期間GaN膜的分解。
上述方法步驟較佳產生自基板起始之平面、非極性、a平面氮化鎵(GaN)膜之橫向磊晶過生長。此外,上述方法步驟被用於製造獨立式a平面GaN膜或基板。使用此法製造之裝置包括雷射二極體、發光二極體及電晶體。
實驗結果
在發明人之實驗中,使用種種介電遮罩圖案來產生8-125 μm厚、完全結合之非極性GaN膜。在過生長區域中奈米規格之小孔密度小於3×106
cm-2
,相較之下在直接生長之a平面GaN中為~1010
cm-2
。陰極發光(CL)顯示在過生長材料中比翼材料在發光密度上增加四倍。X射線搖擺曲線(rocking curve)顯示膜在測量靈敏度內沒有翼傾斜。然而非LEO之a平面GaN展現分別為105
cm-1
及109
cm-2
之基礎平面堆疊錯誤及穿過差排密度,LEO材料基本上沒有延伸缺陷。在翼區域中之基礎平面堆疊錯誤及穿過差排密度分別低於3×103
cm-1
及~5×106
cm-2
之取樣極限。
圖3為使用上述方法生長之a平面GaN條紋之橫剖面掃描式電子顯微鏡(SEM)影像。此條紋係透過SiO2
遮罩中5 μm寬之開口生長且在SiO2
遮罩上方橫向擴展至約30 μm寬。若此生長持續足夠之時間,則此條紋將與相鄰的條紋結合形成連續的a平面GaN表面。結合之膜在過生長區域內將具有較低之差排及堆疊錯誤密度,因為差排受到遮罩的阻礙或差排透過由垂直轉變成橫向生長而彎曲。(注意條紋之切割邊緣為分裂加工品。)
LEO方法之遮罩係藉由利用習知之微影加工並濕蝕刻成~1300厚之電漿增強化學氣相沉積SiO2
層而製備。研究種種遮罩設計,包括圓形孔隙之陣列、沿[0001]GaN
方向取向之平行條紋、沿[100]GaN
方向取向之平行條紋、沿[102]GaN
方向取向之平行條紋及呈「馬車輪」圖案之非平行條紋。LEO生長方法係在習知之三區水平導引流動HVPE系統中進行。(見參考文獻9。)典型之垂直生長速率範圍在~1040℃之基板溫度下為每小時16至50 μm。種種遮罩形狀產生結合之膜,特別是使用由[100]取向條紋之周期陣列組成之遮罩允許整個50 mm直徑之a平面GaN晶圓被結合。
圖4(a)給出用於下面討論之樣品之[100]條紋幾何形狀的示意圖。中斷之生長顯示(0001)Ga面之翼大約比(000)N面之翼前進快約六倍。這比例顯示在HVPE生長中測得之(000)翼之相對生長速率比GaN之MOCVD生長(其中Ga面對N面生長之比例為~10)大。(見參考文獻19。)在{0001}面間之橫向生長速率之大差異之一項優點為結合前峰朝向窗口區域之N面側偏移,產生未被有缺陷之結合前鋒中斷之寬廣翼區域。
圖4(b)顯示以[100]取向條紋形成之20 μm厚結合LEO膜之NomarskiTM
光學對比顯微相片。在影像上部之模糊「魚鱗」狀特徵顯示膜之表面位在焦點上,而與SiO2
之折射率對比允許觀察焦點外之遮罩圖案。
進行原子力顯微分析(AFM)以比較a平面LEO膜之窗口及翼區域中之表面型態。圖4(c)顯示二結合條紋之10×10 μm AFM形貌。窗口區域呈現為有小孔材料之較暗帶,而結合前峰大約在窗口左方1 μm。在影像左側明顯可見之Ga面翼具有卓越之表面品質,其展現小於3×106
cm-2
之平均小孔密度,相較之下在窗口區域內為~109
cm-2
。翼區域之均方根(RMS)粗糙度小於0.9 nm,相較之下在窗口區域中為1.3 nm。
圖5(a)及(b)為經圖案化具有[100]GaN
取向SiO2
條紋之週期陣列之LEO晶圓的橫剖面SEM影像。圖5(a)中之傾斜剖面顯示在整個橫向生長中及結合前不久之[100]取向條紋普遍之陡峭垂直{0001}側壁。圖5(b)顯示四個結合GaN條紋之剖面圖。僅由於充電效應之在膜-模板界面處之對比變化才允許窗口及翼區域可以區別。圖5(c)為結合膜之SEM影像平面圖,其同樣具有沿GaN[100]方向取向之SiO2
條狀的遮罩。表面為平坦的且幾乎沒有特徵,除了一些模糊之不規則隆起外。這些隆起在圖5(d)中之相應CL影像中表現為因散射所致之暗線。圖5(d)為圖5(c)中表面在365 nm之GaN頻帶邊緣處成像之CL影像,其中灰色之較淺陰影顯示較大之發光強度。CL影像中之窗口區域明顯可見為陰暗垂直帶。因為結合前峰接近窗口,故由使用[100]條紋產生大且相對無缺陷之區域,而提供用於製造裝置之充裕表面積。沿<0001>方向取向之窄而暗之條紋看來並未對應於表面特徵。此減少發光之原因為繼續研究之重點,雖然初步之穿透式電子顯微鏡(TEM)結果顯示位在稜柱{100}平面上之堆疊錯誤團簇可為這些暗線的原因。
a平面LEO膜之結構品質之特徵在於x射線繞射(XRD)及TEM。垂直於LEO條紋方向之110 GaN反射之X射線搖擺曲線為單峰,顯示結合膜中缺乏可測得之傾斜。與直接在r平面藍寶石上生長之平面a平面GaN膜相比,在LEO膜中觀察到在軸上或非軸上反射之窄化。(見參考文獻19。)110及100反射之典型的半波高寬(FWHM)分別為750及1250角秒(arcsec)。
圖6(a)、(b)及(c)分別顯示以100及010之g向量成像之LEO膜之平面及剖面TEM影像。與由AFM及CL之觀察一致,窗口區域展現高穿過差排(~9×109
cm-2
)及基礎平面堆疊錯誤(~4×105
cm-1
)密度。相對照之下,Ga面翼區域基本上沒有差排及堆疊錯誤,其密度分別低於~5×106
cm-2
及~3×103
cm-1
之影像取樣限制。N面翼區域亦沒有穿過差排,儘管仍普遍存在基礎平面堆疊錯誤及終止錯誤的蕭克萊(Shockley)部分差排。
上述之結果證實藉由利用HVPE之LEO可輕易地達成a平面GaN中形態及結構缺陷之實質減少。過生長GaN中穿過差排密度之減少伴隨與非LEO平面a平面GaN之表面型態及發光的明顯改良。將LEO結合可藉由HVPE達到之相當高的生長速率充分預示可製造高品質的非極性氮化鎵基板。
參考文獻
下列參考文獻以引用的方式併入本文。
1. T. Nishida及N. Kobayashi,Phys. Stat. Sol.(a),188(1),113(2001)。
2. S. Nakamura、G. Fasol及S. J. Pearton,The Blue Laser Diode
,New York: Springer,2000。
3. L. F. Eastman及U.K. Mishra,IEEE Spectrum,39(5),28(2002)。
4. P. Waltereit、O. Brandt、A. Trampert、H. T. Grahn、J. Menniger、M. Ramsteiner、M. Reiche及K. H. Ploog,Nature(London),406,865,(2000)。
5. M. D. Craven、P. Waltereit、F. Wu、J.S. Speck及S. P. DenBaars,Jpn. J. Appl. Phys.,42(3A) L235(2003)。
6. H. M. Ng,Appl. Phys. Lett.,80(23) 4369(2002)。
7. K. Motoki、T. Okahisa、N. Matsumoto、M. Matsushima、H. Kimura、H. Kasai、K. Takemoto、K. Uematsu、T. Hirano、M. Nakayama、S. Nakahata、M. Ueno、D. Hara、Y. Kumagai、A. Koukitu及H. Seki,Jpn. J. Appl. Phys. Part 2,40(2B),L140(2001)。
8. T. Paskova、P. P. Paskov、V. Darakchieva、S. Tungasmita、J. Birch及B. Monemar,Phys. Stat. Sol.(a) 183(1)197(2001)。
9. B. A. Haskell、F. Wu、M. D. Craven、S. Matsuda、P. T. Fini、S. P. DenBaars、J.S. Speck及S. Nakamura,提交公開。
10.F. Wu、M.D. Craven、S. H. Lim及J. S. Speck,提交公開。
11.T. S. Zheleva、N. Ok-Hyun、M. D. Bremser及R. F. Davis,Appl. Phys. Lett. 71(17),2472(1997)。
12.N. Ok-Hyun、M. D. Bremser、T. S. Zheleva及R. F. Davis,Appl. Phys. Lett. 71(18),2638(1997)。
13.H. Marchand、J. P. Ibbetson、P. T. Fini、P. Kozodoy、S. Keller、S. DenBaars、J. S. Speck及U. K. Mishra,MRS Internet J. Nitride Semicond. Res. 3,3(1998)。
14.H. Marchand、X. H. Wu、J. P. Ibbetson、P. T. Fini、P. Kozodoy、S. Keller、J. S. Speck、S. P. DenBaars及U. K. Mishra,Appl. Phys. Lett. 73(6) 747(1998)。
15.A. Sakai、H. Sunakawa、A. Kimura及A. Usui,Appl. Phys. Lett.,76(4) 442(2000)。
16.O. Parillaud、V. Wagner、H. Bhlmann及M. Ilegems,MRS Internet J. Nitride Semicond. Res.,3,40(1998)。
17.G. Nataf、B. Beaumont、A. Bouille、S. Haffouz、M. Vaille及P. Gibart,J. Cryst. Growth,192,73(1998)。
18.H. Tsuchiya、K. Sunaba、T. Suemasu及F. Hasegawa,J. Cryst. Growth,189/90,395(1998)。
19.M. D. Craven、S. H. Lim、F. Wu、J. S. Speck及S.P. DenBaars,Appl. Phys. Lett.,81(7) 1201(2002)。
結論
在此總結本發明較佳具體實施例之敘述。下面敘述完成本發明之一些替代具體實施例。
較佳具體實施例敘述一種直接單一步驟橫向過生長方法,其中直接自圖案化藍寶石基板起始生長a平面GaN。可使用替代的適當基板材料(包括但不限於a平面碳化矽)於實施本發明。
橫向生長方法之基板亦可由經塗佈GaN、AlN、AlGaN或其他薄膜之「模板」層之適當基板組成。已確立使用這類模板於隨後的再生長為實施本發明之可行技術。
亦可使用藉由種種生長技術在低溫或在生長溫度或高於生長溫度下沉積之晶核生成層於隨後使用此技術藉由HVPE之橫向過生長。
較佳具體實施例利用主要含氫之載氣。儘管生長表面上必須存在一部分的氫,但其他氣體亦可存在於載氣流中,其包括(但不限於)氮、氬或氦。
此外,可使用種種遮罩材料、遮罩沉積技術及圖案化方法於實施本發明,而不會明顯改變發明結果。事實上,可利用介電材料(如二氧化矽及氮化矽)及金屬材料(如鈦)作為實施本發明之遮罩。
另一可選擇之方法為將圖案蝕刻至基板材料中,而非藉由(例如)反應性離子蝕刻在基板上沉積圖案化遮罩。在此一方法中,應選擇基板中溝槽之深度及寬度以及系統壓力(及明確言之為氨分壓),以致自未經蝕刻之高原部分橫向生長之膜在自溝槽底部生長之GaN到達溝槽頂部之前結合。此稱為懸臂磊晶術之技術已經展示用於極性c平面GaN生長,且應可與本發明相容。
文中所述之遮罩圖案之幾何形狀會明顯影響橫向生長膜之行為。除了種種大小、形狀及間隔之孔隙外,已使用含具有相對於基板之各種取向之條紋之遮罩。儘管來自每一形狀開口之生長行為不同,但已經證實遮罩之幾何形狀基本上不會改變本發明之實施。因此,不論幾何形狀為何,包含一些偏好GaN晶核生成之區域及一些GaN晶核生成不易之區域之任何遮罩皆為可接受的。
反應器幾何形體及設計可影響本發明之實施,如進一步討論於下列專利案中:同在申請中及共同受讓之國際申請案編號PCT/US03/2/9/6,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵」,其係在2003年7月15日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-WO-U1,此申請案主張同在申請中且共同受讓之美國臨時專利申請案序號60/433,844,標題為「藉由氫化物汽相磊晶術生長平面、非極性A平面氮化鎵之技術」之優先權,其係在2002年12月16日由Benjamin A. Haskell、Paul T. Fini、Shigemasa Matsuda、Michael D. Craven、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.94-US-P1;以及美國臨時專利申請案序號60/433,843,標題為「藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵」,其係在2002年12月16日由Benjamin A. Haskell、Michael D. Craven、Paul T. Fini、Steven P. DenBaars、James S. Speck及Shuji Nakamura申請,律師事務所檔案號30794.93-US-P1,這些申請案以引用的方式併入本文。然而,應提及成功之非極性GaN橫向過生長所需之生長參數可隨反應器而改變。此等變化基本上不會改變本發明之一般實施。
此外,儘管通常希望持續橫向生長過程至膜結合之點,但結合並非本發明之必要條件。事實上,可預見在一些應用中未結合之橫向過生長非極性GaN條紋或柱狀物將係非常適合的。因此,本發明適用於經結合及未結合的橫向過生長非極性GaN膜。
最後,本文所述方法可經放大用於多晶圓生長。明確言之,本發明可透過同時在多個晶圓上生長膜而實施。
總而言之,本發明敘述在藉由HVPE生長之非極性GaN中減少缺陷,因而明顯改良膜品質且允許製造經增進的GaN基板層供隨後之非極性裝置製造用。
上面敘述之一或多個本發明之具體實施例係以描述或敘述之目的呈現。其並非巨細靡遺或欲將本發明限制在所揭示的精確形式。依照以上之教示可進行許多修改及變化。本發明之範圍無意受此詳細敘述之限制,而係由隨附之申請專利範圍所界定。
100...六邊形纖鋅礦晶體結構
102...平面
104...平面
106...平面
108...平面
110...軸
112...軸
114...軸
116...軸
200...在藍寶石基板上沉積SiO2
202...圖案化光阻層
204...蝕刻暴露之SiO2
206...移除光阻
208...清潔晶圓
210...將基板載入反應器中
212...將反應器抽真空並回填
214...加熱反應器
216...添加無水氨
218...降低反應器壓力
220...開始HCl流至Ga源
222...使用包括H2
之載氣輸送GaCl
224...中斷氣流並冷卻基板
參照圖示,其中所有圖中相似的參考編號代表相應的部分:
圖1為一般六邊形纖鋅礦(wrtzite)晶體結構及與其中標明之該等軸相關之平面之示意圖;
圖2為描述進行根據本發明較佳具體實施例之平面、非極性、a平面氮化鎵(GaN)膜之橫向磊晶過生長之方法的流程圖;
圖3為a平面GaN條紋之橫剖面掃描式電子顯微鏡(SEM)影像;
圖4(a)為[100]條紋幾何形狀之示意圖;
圖4(b)為以[100]取向條紋形成之20 μm厚結合LEO膜之光學對比顯微相片;
圖4(c)為二結合條紋之10×10 μm原子力顯微形貌。
圖5(a)及(b)為以[100]GaN
取向SiO2
條紋之週期陣列圖案化之LEO晶圓的橫剖面SEM影像;
圖5(c)為結合膜之平面SEM影像;
圖5(d)為結合膜之陰極發光(CL)影像;及
圖6(a)、(b)及(c)顯示以100及010之g向量成像之LEO膜之平面及橫剖面TEM影像。
200...在藍寶石基板上沉積SiO2
202...圖案化光阻層
204...蝕刻暴露之SiO2
206...移除光阻
208...清潔晶圓
210...將基板載入反應器中
212...將反應器抽真空並回填
214...加熱反應器
216...添加無水氨
218...降低反應器壓力
220...開始HCl流至Ga源
222...使用包括H2
之載氣輸送GaCl
224...中斷氣流並冷卻基板
Claims (30)
- 一種第三族氮化物層之結構,其包括:非極性a-平面或m-平面第三族氮化物層或膜;其中:隨後的非極性a-平面或m-平面第三族氮化物層係生長於該非極性a-平面或m-平面第三族氮化物層或膜之上表面,該上表面為經生長的表面,其具有於至少10μm×10μm之區域上小於0.9nm之均方根(RMS)粗糙度,該上表面為平面非極性a-平面或m-平面之平面;及該非極性a-平面或m-平面第三族氮化物層或膜之穿過差排密度係低於5×106 cm-2 。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜為氮化鎵(GaN)。
- 如申請專利範圍第1項之結構,其中該上表面為a-平面。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜之堆疊錯誤密度係低於3×103 cm-1 。
- 如申請專利範圍第4項之結構,其係位於圖案化遮罩上,其中該非極性a-平面或m-平面第三族氮化物層或膜包括橫向磊晶生長,且該非極性a-平面或m-平面第三族氮化物層或膜橫向過生長該圖案化遮罩之區域具有低於5×106 cm-2 之穿過差排密度及低於3×103 cm-1 之堆疊錯誤密度。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜之厚度係足以形成獨立式基板。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜為厚度為至少200μm之結合膜。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜為GaN膜於基板上之橫向磊晶過生長。
- 如申請專利範圍第8項之結構,其中該橫向磊晶過生長係自藍寶石基板起始。
- 如申請專利範圍第1項之結構,其中該非極性a-平面或m-平面第三族氮化物層或膜係位於包含與該非極性a-平面或m-平面第三族氮化物層或膜不同材料之基板上。
- 如申請專利範圍第8項之結構,其中該基板為經圖案化之基板,且該GaN膜只在該經圖案化基板的暴露部分上生成晶核。
- 如申請專利範圍第11項之結構,其中該GaN膜自該經圖案化基板的暴露部分垂直生長,並於該經圖案化基板上方橫向擴展而產生該上表面,該上表面為平面且非極性。
- 如申請專利範圍第12項之結構,其中該GaN膜為結合膜,其在過生長區域內具有較低之差排及堆疊錯誤密度,因為差排受到遮罩的阻礙或差排透過由垂直轉變成 橫向生長而彎曲。
- 如申請專利範圍第11項之結構,其中該經圖案化基板為其上具有遮罩的基板,且該遮罩其中含有暴露部分該基板的孔隙或條紋。
- 如申請專利範圍第14項之結構,其中該經圖案化基板為r-平面藍寶石(Al2 O3 )基板。
- 如申請專利範圍第11項之結構,其中與直接在均一基板上生長之非極性GaN膜相較,該GaN膜於該經圖案化基板上之橫向磊晶生長造成該GaN膜之缺陷減少及膜品質改進。
- 如申請專利範圍第10項之結構,其中該基板為外來基板,且該GaN膜之橫向磊晶生長係直接自該外來基板起始。
- 如申請專利範圍第10項之結構,其進一步包括一或多個裝置層,其包含生長於該非極性a-平面或m-平面第三族氮化物層或膜之上表面的該隨後的非極性a-平面或m-平面第三族氮化物層。
- 如申請專利範圍第18項之結構,其中該裝置層為發光二極體、雷射二極體或電晶體裝置層。
- 一種生長半導體膜的方法,其包括:於基板上進行氮化鎵(GaN)膜之橫向磊晶過生長,其中該GaN膜具有上表面,該上表面為平面且非極性,該上表面具有於至少10μm×10μm之區域上小於0.9nm之均方根(RMS)粗糙度,及 該非極性GaN膜之穿過差排密度係低於5×106 cm-2 。
- 如申請專利範圍第20項之方法,其中該基板為經圖案化之基板,其包含:於該基板上之遮罩,其中該遮罩含有暴露部分該基板的孔隙或條紋,且該GaN膜只在該經圖案化基板的暴露部分上生成晶核,或在該基板上之圖案化表面,其包含溝槽,且其中自該溝槽頂部橫向生長之GaN在自溝槽底部生長之GaN到達溝槽頂部之前結合。
- 如申請專利範圍第21項之方法,其中該GaN膜自該經圖案化基板的暴露部分垂直生長,並於該經圖案化基板上方橫向擴展而產生該上表面,該上表面為平面且非極性。
- 如申請專利範圍第22項之方法,其中該GaN膜為結合膜,其在過生長區域內具有較低之差排及堆疊錯誤密度,因為差排受到該遮罩的阻礙或差排透過由垂直轉變成橫向生長而彎曲。
- 如申請專利範圍第21項之方法,其中該基板為r-平面藍寶石(Al2 O3 )基板。
- 如申請專利範圍第21項之方法,其中與直接在均一且不具有遮罩及圖案化表面之基板上生長之非極性GaN膜相較,該GaN膜於該經圖案化基板上之橫向磊晶生長造成該GaN膜之缺陷減少及膜品質改進。
- 如申請專利範圍第20項之方法,其中該基板為外來基 板,且該GaN膜之橫向磊晶生長係直接自該外來基板起始。
- 如申請專利範圍第20項之方法,其中係使用氫化物汽相磊晶術(HVPE)進行該橫向磊晶過生長。
- 一種半導體膜,其係使用如申請專利範圍第20項之方法所生長。
- 如申請專利範圍第21項之方法,其中自鄰近條紋、孔隙或溝槽之GaN結合以形成平面且非極性之GaN膜。
- 如申請專利範圍第21項之方法,其中至少部分自鄰近條紋、孔隙或溝槽之GaN不發生結合,以形成平面且非極性之GaN膜之條紋。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004061909A1 (en) | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
WO2003089696A1 (en) | 2002-04-15 | 2003-10-30 | The Regents Of The University Of California | Dislocation reduction in non-polar gallium nitride thin films |
US8809867B2 (en) | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
US7208393B2 (en) | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
US7427555B2 (en) | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7504274B2 (en) | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7956360B2 (en) | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
DE102005021099A1 (de) | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN-Schichten |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
JP5063594B2 (ja) * | 2005-05-17 | 2012-10-31 | 台湾積體電路製造股▲ふん▼有限公司 | 転位欠陥密度の低い格子不整合半導体構造およびこれに関連するデバイス製造方法 |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US20070267722A1 (en) * | 2006-05-17 | 2007-11-22 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
JP2006324465A (ja) * | 2005-05-19 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
JP4857616B2 (ja) * | 2005-06-17 | 2012-01-18 | ソニー株式会社 | GaN系化合物半導体層の形成方法、及び、GaN系半導体発光素子の製造方法 |
KR100623271B1 (ko) | 2005-06-24 | 2006-09-12 | 한국과학기술연구원 | 갈륨망간나이트라이드 단결정 나노선의 제조방법 |
WO2007009035A2 (en) * | 2005-07-13 | 2007-01-18 | The Regents Of The University Of California | Lateral growth method for defect reduction of semipolar nitride films |
US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
JP2007103774A (ja) * | 2005-10-06 | 2007-04-19 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
KR20070042594A (ko) | 2005-10-19 | 2007-04-24 | 삼성코닝 주식회사 | 편평한 측면을 갖는 a면 질화물 반도체 단결정 기판 |
KR101510461B1 (ko) * | 2006-01-20 | 2015-04-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 반극성 (Al,In,Ga,B)N의 개선된 성장 방법 |
KR100695119B1 (ko) * | 2006-01-20 | 2007-03-14 | 삼성코닝 주식회사 | GaN 기판의 제조방법 |
JP4802315B2 (ja) * | 2006-01-24 | 2011-10-26 | シャープ株式会社 | 窒化物半導体発光素子とその製造方法 |
KR101416838B1 (ko) * | 2006-02-10 | 2014-07-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | (Al,In,Ga,B)N의 전도도 제어 방법 |
JP4888857B2 (ja) * | 2006-03-20 | 2012-02-29 | 国立大学法人徳島大学 | Iii族窒化物半導体薄膜およびiii族窒化物半導体発光素子 |
WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
KR20090018106A (ko) * | 2006-05-09 | 2009-02-19 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 비극성 및 준극성 (al, ga, in)n을 위한 인-시츄 결함 감소 기술 |
WO2007145873A2 (en) | 2006-06-05 | 2007-12-21 | Cohen Philip I | Growth of low dislocation density group-iii nitrides and related thin-film structures |
WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
US8421119B2 (en) * | 2006-09-13 | 2013-04-16 | Rohm Co., Ltd. | GaN related compound semiconductor element and process for producing the same and device having the same |
WO2008036256A1 (en) * | 2006-09-18 | 2008-03-27 | Amberwave Systems Corporation | Aspect ratio trapping for mixed signal applications |
WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
WO2008039495A1 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
WO2008051503A2 (en) * | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
US7589360B2 (en) | 2006-11-08 | 2009-09-15 | General Electric Company | Group III nitride semiconductor devices and methods of making |
ATE541074T1 (de) * | 2006-11-14 | 2012-01-15 | Univ Osaka | Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall |
WO2008060349A2 (en) | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
JP2010512301A (ja) * | 2006-12-12 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 様々な基板上の(Al,In,Ga,B)NのM面および半極性面の結晶成長 |
US8458262B2 (en) * | 2006-12-22 | 2013-06-04 | At&T Mobility Ii Llc | Filtering spam messages across a communication network |
US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
WO2008143166A1 (ja) * | 2007-05-17 | 2008-11-27 | Mitsubishi Chemical Corporation | Iii族窒化物半導体結晶の製造方法、iii族窒化物半導体基板および半導体発光デバイス |
JP4462289B2 (ja) | 2007-05-18 | 2010-05-12 | ソニー株式会社 | 半導体層の成長方法および半導体発光素子の製造方法 |
US20080296626A1 (en) * | 2007-05-30 | 2008-12-04 | Benjamin Haskell | Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
JP4825747B2 (ja) * | 2007-07-13 | 2011-11-30 | 日本碍子株式会社 | 非極性面iii族窒化物単結晶の製造方法 |
US7847280B2 (en) * | 2007-08-08 | 2010-12-07 | The Regents Of The University Of California | Nonpolar III-nitride light emitting diodes with long wavelength emission |
CN101884117B (zh) | 2007-09-07 | 2013-10-02 | 台湾积体电路制造股份有限公司 | 多结太阳能电池 |
JP4944738B2 (ja) * | 2007-11-13 | 2012-06-06 | 古河機械金属株式会社 | GaN半導体基板の製造方法 |
KR20100134577A (ko) * | 2008-03-03 | 2010-12-23 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 반도체 결정과 그 제조 방법 |
US20100075107A1 (en) * | 2008-05-28 | 2010-03-25 | The Regents Of The University Of California | Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) * | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US8673074B2 (en) * | 2008-07-16 | 2014-03-18 | Ostendo Technologies, Inc. | Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
EP2319086A4 (en) | 2008-08-04 | 2014-08-27 | Soraa Inc | WHITE LIGHTING DEVICES WITH NON POLAR OR SEMI-POLAR GALLIUM-HARDENED MATERIALS AND INFLUENCES |
US20100025727A1 (en) * | 2008-08-04 | 2010-02-04 | Benjamin Allen Haskell | Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8021481B2 (en) * | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US8430958B2 (en) * | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US8034697B2 (en) | 2008-09-19 | 2011-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of devices by epitaxial layer overgrowth |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
JP5180050B2 (ja) * | 2008-12-17 | 2013-04-10 | スタンレー電気株式会社 | 半導体素子の製造方法 |
US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
CN102449737A (zh) * | 2009-03-02 | 2012-05-09 | 加利福尼亚大学董事会 | 生长于非极性或半极性(Ga,Al,In,B)N衬底上的装置 |
JP5424363B2 (ja) * | 2009-03-05 | 2014-02-26 | 国立大学法人大阪大学 | 集光照射基板を用いた半導体薄膜の製造方法、半導体薄膜の製造装置、および半導体薄膜の選択成長方法 |
WO2010114956A1 (en) | 2009-04-02 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US8507304B2 (en) * | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
US8148241B2 (en) * | 2009-07-31 | 2012-04-03 | Applied Materials, Inc. | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US8629065B2 (en) * | 2009-11-06 | 2014-01-14 | Ostendo Technologies, Inc. | Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) |
US8541252B2 (en) * | 2009-12-17 | 2013-09-24 | Lehigh University | Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110215348A1 (en) * | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
CN101931039B (zh) * | 2010-08-23 | 2012-07-25 | 安徽三安光电有限公司 | 具有双层交错贯穿孔洞的氮化镓基发光二极管及其制作工艺 |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
FR2968831B1 (fr) * | 2010-12-08 | 2012-12-21 | Soitec Silicon On Insulator | Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8975165B2 (en) | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
KR101253198B1 (ko) * | 2011-07-05 | 2013-04-10 | 엘지전자 주식회사 | 무분극 이종 기판, 이를 이용한 질화물계 발광 소자 및 그 제조방법 |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
JP2014067869A (ja) * | 2012-09-26 | 2014-04-17 | Nobuyuki Akiyama | ヘテロエピタキシャル単結晶の製造方法、ヘテロ接合太陽電池の製造方法、ヘテロエピタキシャル単結晶、ヘテロ接合太陽電池 |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US20140183579A1 (en) * | 2013-01-02 | 2014-07-03 | Japan Science And Technology Agency | Miscut semipolar optoelectronic device |
TWI620340B (zh) * | 2013-03-15 | 2018-04-01 | 傲思丹度科技公司 | 增強效能主動式像素陣列及用於達成其之磊晶成長方法 |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
DE102014116999A1 (de) * | 2014-11-20 | 2016-05-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
CN104821352B (zh) * | 2015-05-14 | 2018-09-25 | 上海世湖材料科技有限公司 | 一种InGaN/GaN量子阱界面中断生长结构及方法 |
CN107180743B (zh) * | 2016-03-11 | 2019-12-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种制备半极性AlN模板的方法 |
WO2018118220A1 (en) * | 2016-12-23 | 2018-06-28 | Sixpoint Materials, Inc. | Electronic device using group iii nitride semiconductor and its fabrication method |
KR102330907B1 (ko) * | 2017-07-20 | 2021-11-25 | 스웨간 에이비 | 고 전자 이동도 트랜지스터를 위한 이종구조체 및 이를 제조하는 방법 |
CN108385161A (zh) * | 2018-02-07 | 2018-08-10 | 赛富乐斯股份有限公司 | 氮化镓晶体制造方法和衬底 |
US11949039B2 (en) | 2018-11-05 | 2024-04-02 | King Abdullah University Of Science And Technology | Optoelectronic semiconductor device with nanorod array |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
JP7244745B2 (ja) * | 2019-02-15 | 2023-03-23 | 日亜化学工業株式会社 | 発光装置、及び、光学装置 |
CN110047979B (zh) * | 2019-02-20 | 2020-10-09 | 华灿光电(苏州)有限公司 | 紫外发光二极管外延片及其制造方法 |
WO2021084755A1 (ja) * | 2019-11-01 | 2021-05-06 | 三菱電機株式会社 | 化合物半導体の結晶欠陥観察方法 |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
WO2021162727A1 (en) | 2020-02-11 | 2021-08-19 | SLT Technologies, Inc | Improved group iii nitride substrate, method of making, and method of use |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0754806B2 (ja) * | 1987-01-20 | 1995-06-07 | 日本電信電話株式会社 | 化合物半導体単結晶膜の成長方法 |
JP2809692B2 (ja) * | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JPH033233A (ja) * | 1989-05-30 | 1991-01-09 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶薄膜の成長方法 |
US6440823B1 (en) | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
KR100239497B1 (ko) | 1997-06-13 | 2000-02-01 | 구자홍 | 질화갈륨 단결정 기판의 제조방법 |
JPH111399A (ja) * | 1996-12-05 | 1999-01-06 | Lg Electron Inc | 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード |
EP2234142A1 (en) | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6608327B1 (en) * | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
US6294440B1 (en) * | 1998-04-10 | 2001-09-25 | Sharp Kabushiki Kaisha | Semiconductor substrate, light-emitting device, and method for producing the same |
US6180270B1 (en) * | 1998-04-24 | 2001-01-30 | The United States Of America As Represented By The Secretary Of The Army | Low defect density gallium nitride epilayer and method of preparing the same |
JP3788037B2 (ja) * | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
WO1999066565A1 (en) * | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
JP2000156544A (ja) * | 1998-09-17 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
JP3171180B2 (ja) * | 1999-02-04 | 2001-05-28 | 日本電気株式会社 | 気相エピタキシャル成長法、半導体基板の製造方法、半導体基板及びハイドライド気相エピタキシー装置 |
US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
JP4288743B2 (ja) * | 1999-03-24 | 2009-07-01 | 日亜化学工業株式会社 | 窒化物半導体の成長方法 |
JP3587081B2 (ja) * | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体発光素子 |
US6268621B1 (en) * | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
US6566231B2 (en) * | 2000-02-24 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region |
JP3557441B2 (ja) | 2000-03-13 | 2004-08-25 | 日本電信電話株式会社 | 窒化物半導体基板およびその製造方法 |
JP3946427B2 (ja) * | 2000-03-29 | 2007-07-18 | 株式会社東芝 | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
TW518767B (en) * | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
JP3680751B2 (ja) * | 2000-03-31 | 2005-08-10 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法及びiii族窒化物系化合物半導体素子 |
JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
JP4556300B2 (ja) * | 2000-07-18 | 2010-10-06 | ソニー株式会社 | 結晶成長方法 |
JP2002076521A (ja) | 2000-08-30 | 2002-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体発光素子 |
JP4154558B2 (ja) | 2000-09-01 | 2008-09-24 | 日本電気株式会社 | 半導体装置 |
US6635901B2 (en) * | 2000-12-15 | 2003-10-21 | Nobuhiko Sawaki | Semiconductor device including an InGaAIN layer |
US6599362B2 (en) | 2001-01-03 | 2003-07-29 | Sandia Corporation | Cantilever epitaxial process |
US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
JP3985462B2 (ja) * | 2001-04-26 | 2007-10-03 | 日亜化学工業株式会社 | 窒化物半導体基板、及びそれを用いた窒化物半導体素子の製造方法 |
DE60234856D1 (de) * | 2001-10-26 | 2010-02-04 | Ammono Sp Zoo | Substrat für epitaxie |
EP1453158A4 (en) * | 2001-10-26 | 2007-09-19 | Ammono Sp Zoo | NITRIDE SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREFOR |
US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
WO2004061909A1 (en) * | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
WO2003089696A1 (en) * | 2002-04-15 | 2003-10-30 | The Regents Of The University Of California | Dislocation reduction in non-polar gallium nitride thin films |
WO2005064643A1 (en) | 2003-04-15 | 2005-07-14 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
JP4201541B2 (ja) * | 2002-07-19 | 2008-12-24 | 豊田合成株式会社 | 半導体結晶の製造方法及びiii族窒化物系化合物半導体発光素子の製造方法 |
US6876009B2 (en) * | 2002-12-09 | 2005-04-05 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
US7427555B2 (en) * | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
US6847057B1 (en) | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10697898B2 (en) | 2018-10-15 | 2020-06-30 | Showa Denko K.K. | SiC substrate evaluation method and method for manufacturing SiC epitaxial wafer |
TWI709671B (zh) * | 2018-10-15 | 2020-11-11 | 日商昭和電工股份有限公司 | SiC基板之評價方法及SiC磊晶晶圓之製造方法 |
US11249027B2 (en) | 2018-10-15 | 2022-02-15 | Showa Denko K.K. | SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer |
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TWI366865B (en) | 2012-06-21 |
US20060128124A1 (en) | 2006-06-15 |
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JP2006510227A (ja) | 2006-03-23 |
EP1576671A4 (en) | 2006-10-25 |
TW201108302A (en) | 2011-03-01 |
TWI433313B (zh) | 2014-04-01 |
KR101372698B1 (ko) | 2014-03-11 |
JP2010004074A (ja) | 2010-01-07 |
AU2003259125A1 (en) | 2004-07-29 |
US7847293B2 (en) | 2010-12-07 |
JP4486506B2 (ja) | 2010-06-23 |
EP1576671A1 (en) | 2005-09-21 |
AU2003256522A1 (en) | 2004-07-29 |
TW201108411A (en) | 2011-03-01 |
WO2004061909A1 (en) | 2004-07-22 |
TWI369784B (zh) | 2012-08-01 |
US20120074425A1 (en) | 2012-03-29 |
KR101086155B1 (ko) | 2011-11-25 |
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US20110278585A1 (en) | 2011-11-17 |
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