ATE546568T1 - Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern - Google Patents

Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern

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Publication number
ATE546568T1
ATE546568T1 AT06819930T AT06819930T ATE546568T1 AT E546568 T1 ATE546568 T1 AT E546568T1 AT 06819930 T AT06819930 T AT 06819930T AT 06819930 T AT06819930 T AT 06819930T AT E546568 T1 ATE546568 T1 AT E546568T1
Authority
AT
Austria
Prior art keywords
substrate
growth
single crystal
epitactical
producing
Prior art date
Application number
AT06819930T
Other languages
English (en)
Inventor
Eric Aujol
Jean-Pierre Faurie
Bernard Beaumont
Original Assignee
Saint Gobain Cristaux & Detecteurs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux & Detecteurs filed Critical Saint Gobain Cristaux & Detecteurs
Application granted granted Critical
Publication of ATE546568T1 publication Critical patent/ATE546568T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT06819930T 2006-12-08 2006-12-08 Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern ATE546568T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/069474 WO2008067854A1 (en) 2006-12-08 2006-12-08 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate

Publications (1)

Publication Number Publication Date
ATE546568T1 true ATE546568T1 (de) 2012-03-15

Family

ID=37964564

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06819930T ATE546568T1 (de) 2006-12-08 2006-12-08 Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern

Country Status (9)

Country Link
US (1) US8557042B2 (de)
EP (1) EP2122015B1 (de)
JP (1) JP5242587B2 (de)
KR (1) KR101426319B1 (de)
CN (1) CN101600819B (de)
AT (1) ATE546568T1 (de)
PL (1) PL2122015T3 (de)
TW (1) TWI429796B (de)
WO (1) WO2008067854A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565042B1 (ja) * 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP5518566B2 (ja) * 2010-05-10 2014-06-11 信越半導体株式会社 窒化物半導体自立基板の製造方法
JP5845730B2 (ja) * 2011-08-30 2016-01-20 日亜化学工業株式会社 結晶基板の製造方法及び基板保持具
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
JP2013227202A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、および、当該製造方法によって得られた周期表第１３族金属窒化物半導体結晶を用いた半導体発光デバイス
CN103074676B (zh) * 2012-09-13 2016-04-27 中国电子科技集团公司第四十六研究所 一种实现具有自剥离功能半导体材料生长的边缘保护方法
CN104835720B (zh) * 2015-04-13 2017-09-19 成都士兰半导体制造有限公司 一种半导体结构及其形成方法
WO2021030394A1 (en) * 2019-08-15 2021-02-18 Crystal Is, Inc. Diameter expansion of aluminum nitride crystals

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SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
FR2585892B1 (fr) * 1985-08-05 1987-11-20 Girard Francois Dispositif de miniaturisation des connexions d'elements soumis a de tres fortes intensites electriques
FR2667197B1 (fr) * 1990-09-20 1993-12-24 Rosette Azoulay Procede d'epitaxie selective et de gravure de materiau iii-v ou ii-vi dans un meme bati de croissance omcvd.
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JP4178619B2 (ja) * 1998-10-27 2008-11-12 ソニー株式会社 シリコン層の製造方法および半導体装置の製造方法
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Also Published As

Publication number Publication date
TW200825221A (en) 2008-06-16
WO2008067854A1 (en) 2008-06-12
CN101600819B (zh) 2012-08-15
KR20100014299A (ko) 2010-02-10
JP5242587B2 (ja) 2013-07-24
CN101600819A (zh) 2009-12-09
EP2122015B1 (de) 2012-02-22
TWI429796B (zh) 2014-03-11
US8557042B2 (en) 2013-10-15
KR101426319B1 (ko) 2014-08-06
JP2010511584A (ja) 2010-04-15
US20100074826A1 (en) 2010-03-25
PL2122015T3 (pl) 2012-07-31
EP2122015A1 (de) 2009-11-25

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