ATE414189T1 - Verfahren zur herstellung von selbsttragenden substraten, die iii-nitride umfassen, mittels heteroepitaxie auf einer opferschicht - Google Patents
Verfahren zur herstellung von selbsttragenden substraten, die iii-nitride umfassen, mittels heteroepitaxie auf einer opferschichtInfo
- Publication number
- ATE414189T1 ATE414189T1 AT04787441T AT04787441T ATE414189T1 AT E414189 T1 ATE414189 T1 AT E414189T1 AT 04787441 T AT04787441 T AT 04787441T AT 04787441 T AT04787441 T AT 04787441T AT E414189 T1 ATE414189 T1 AT E414189T1
- Authority
- AT
- Austria
- Prior art keywords
- iii
- nitrides
- self
- sacrificial layer
- nitride
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000001534 heteroepitaxy Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 238000000407 epitaxy Methods 0.000 abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0311296A FR2860248B1 (fr) | 2003-09-26 | 2003-09-26 | Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE414189T1 true ATE414189T1 (de) | 2008-11-15 |
Family
ID=34307188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04787441T ATE414189T1 (de) | 2003-09-26 | 2004-09-24 | Verfahren zur herstellung von selbsttragenden substraten, die iii-nitride umfassen, mittels heteroepitaxie auf einer opferschicht |
Country Status (11)
Country | Link |
---|---|
US (1) | US7282381B2 (de) |
EP (1) | EP1699951B1 (de) |
JP (1) | JP4783288B2 (de) |
KR (1) | KR101154747B1 (de) |
CN (1) | CN100387760C (de) |
AT (1) | ATE414189T1 (de) |
AU (1) | AU2004276541B2 (de) |
CA (1) | CA2540245C (de) |
DE (1) | DE602004017781D1 (de) |
FR (1) | FR2860248B1 (de) |
WO (1) | WO2005031045A2 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7018909B2 (en) * | 2003-02-28 | 2006-03-28 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
US7348076B2 (en) | 2004-04-08 | 2008-03-25 | Saint-Gobain Ceramics & Plastics, Inc. | Single crystals and methods for fabricating same |
JP2007134388A (ja) * | 2005-11-08 | 2007-05-31 | Sharp Corp | 窒化物系半導体素子とその製造方法 |
US20090081109A1 (en) * | 2005-11-17 | 2009-03-26 | Mosaic Crystals Ltd. | GaN CRYSTAL SHEET |
JP2009519202A (ja) * | 2005-12-12 | 2009-05-14 | キーマ テクノロジーズ, インク. | Iii族窒化物製品及び同製品の作製方法 |
TWI408264B (zh) * | 2005-12-15 | 2013-09-11 | Saint Gobain Cristaux & Detecteurs | 低差排密度氮化鎵(GaN)之生長方法 |
CN1988109B (zh) * | 2005-12-21 | 2012-03-21 | 弗赖贝格化合物原料有限公司 | 生产自支撑iii-n层和自支撑iii-n基底的方法 |
JP2007217227A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Electric Ind Ltd | GaN結晶の製造方法、GaN結晶基板および半導体デバイス |
KR20090018106A (ko) * | 2006-05-09 | 2009-02-19 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 비극성 및 준극성 (al, ga, in)n을 위한 인-시츄 결함 감소 기술 |
DE102006029831A1 (de) * | 2006-06-27 | 2008-01-03 | Acandis Gmbh & Co. Kg | Verfahren zur Herstellung strukturierter Schichten aus Titan und Nickel |
UA96952C2 (ru) * | 2006-09-22 | 2011-12-26 | Сейнт-Гобейн Серамикс Энд Пластикс, Инк. | УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ |
PL2122015T3 (pl) * | 2006-12-08 | 2012-07-31 | Saint Gobain Cristaux & Detecteurs | Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża |
JP5125098B2 (ja) * | 2006-12-26 | 2013-01-23 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
US7943485B2 (en) * | 2007-01-22 | 2011-05-17 | Group4 Labs, Llc | Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof |
DE102007020979A1 (de) * | 2007-04-27 | 2008-10-30 | Azzurro Semiconductors Ag | Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie |
FR2917232B1 (fr) * | 2007-06-06 | 2009-10-09 | Soitec Silicon On Insulator | Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion. |
US20090130415A1 (en) * | 2007-11-21 | 2009-05-21 | Saint-Gobain Ceramics & Plastics, Inc. | R-Plane Sapphire Method and Apparatus |
KR100969812B1 (ko) * | 2007-12-12 | 2010-07-13 | 주식회사 실트론 | 자가 분리를 이용한 질화갈륨 단결정 기판의 제조 방법 |
JP5324110B2 (ja) * | 2008-01-16 | 2013-10-23 | 国立大学法人東京農工大学 | 積層体およびその製造方法 |
KR101423718B1 (ko) * | 2008-02-26 | 2014-08-04 | 서울바이오시스 주식회사 | 낮은 결함 밀도를 가지는 단결정 실리콘 카바이드 기판 및그 제조 방법 |
FR2931293B1 (fr) | 2008-05-15 | 2010-09-03 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante |
US8633493B2 (en) * | 2008-08-04 | 2014-01-21 | Goldeneye, Inc. | Large area thin freestanding nitride layers and their use as circuit layers |
US9171909B2 (en) | 2008-08-04 | 2015-10-27 | Goldeneye, Inc. | Flexible semiconductor devices based on flexible freestanding epitaxial elements |
EP2151861A1 (de) * | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Passivierung von geätzten Halbleiterstrukturen |
EP2151852B1 (de) * | 2008-08-06 | 2020-01-15 | Soitec | Relaxation und Übertragung von Spannungsschichten |
TWI457984B (zh) | 2008-08-06 | 2014-10-21 | Soitec Silicon On Insulator | 應變層的鬆弛方法 |
EP2151856A1 (de) * | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Relaxation von Spannungsschichten |
EP2159836B1 (de) * | 2008-08-25 | 2017-05-31 | Soitec | Versteifungsschichten zur Relaxation von verspannten Schichten |
KR101101780B1 (ko) * | 2008-09-08 | 2012-01-05 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
JP5328931B2 (ja) * | 2008-12-24 | 2013-10-30 | サン−ゴバン クリストー エ デテクトゥール | 低欠陥密度の自立窒化ガリウム基板の製法およびそれにより製造されたデバイス |
JP4871973B2 (ja) * | 2009-04-28 | 2012-02-08 | 株式会社沖データ | 半導体薄膜素子の製造方法並びに半導体ウエハ、及び、半導体薄膜素子 |
KR101640830B1 (ko) * | 2009-08-17 | 2016-07-22 | 삼성전자주식회사 | 기판 구조체 및 그 제조 방법 |
US8158200B2 (en) * | 2009-08-18 | 2012-04-17 | University Of North Texas | Methods of forming graphene/(multilayer) boron nitride for electronic device applications |
US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
FR2961948B1 (fr) * | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
EP2727134A4 (de) | 2011-06-28 | 2015-04-01 | Saint Gobain Cristaux Et Detecteurs | Halbleitersubstrat und verfahren zu seiner herstellung |
KR20140106590A (ko) * | 2011-11-21 | 2014-09-03 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | 반도체 기판 및 형성 방법 |
WO2013123241A1 (en) * | 2012-02-17 | 2013-08-22 | The Regents Of The University Of California | Method for the reuse of gallium nitride epitaxial substrates |
JP2013173652A (ja) * | 2012-02-27 | 2013-09-05 | Tokuyama Corp | 自立基板の製造方法 |
TWI528580B (zh) * | 2012-03-30 | 2016-04-01 | 聖戈班晶體探測器公司 | 形成獨立式半導體晶圓之方法 |
CN102650074B (zh) * | 2012-04-09 | 2015-09-16 | 中国电子科技集团公司第五十五研究所 | 制备大尺寸宽禁带单晶薄膜的结构和方法 |
EP2888757A1 (de) * | 2012-08-23 | 2015-07-01 | Sixpoint Materials Inc. | Verbundsubstrat aus galliumnitrid und einem metalloxid |
CN103074676B (zh) * | 2012-09-13 | 2016-04-27 | 中国电子科技集团公司第四十六研究所 | 一种实现具有自剥离功能半导体材料生长的边缘保护方法 |
KR101381056B1 (ko) | 2012-11-29 | 2014-04-14 | 주식회사 시지트로닉스 | Ⅲ-질화계 에피층이 성장된 반도체 기판 및 그 방법 |
KR102071034B1 (ko) | 2013-02-28 | 2020-01-29 | 서울바이오시스 주식회사 | 질화물 기판 제조 방법 |
FR3007193B1 (fr) * | 2013-06-18 | 2016-12-09 | Saint-Gobain Lumilog | Materiau semi-conducteur incluant des zones d'orientations cristallines differentes et procede de realisation associe |
CN103388178B (zh) * | 2013-08-07 | 2016-12-28 | 厦门市三安光电科技有限公司 | Iii族氮化物外延结构及其生长方法 |
TWI570911B (zh) * | 2014-05-19 | 2017-02-11 | 新世紀光電股份有限公司 | 半導體結構 |
KR20160008382A (ko) | 2014-07-14 | 2016-01-22 | 서울대학교산학협력단 | 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치 |
JP2016062956A (ja) * | 2014-09-16 | 2016-04-25 | アイシン精機株式会社 | 基板及びその製造方法、半導体素子及びその製造方法、並びにレーザ加工装置 |
FR3029942B1 (fr) | 2014-12-11 | 2020-12-25 | Saint Gobain Lumilog | Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul |
US10181398B2 (en) | 2014-12-30 | 2019-01-15 | Sensor Electronic Technology, Inc. | Strain-control heterostructure growth |
WO2016197077A1 (en) | 2015-06-05 | 2016-12-08 | Sensor Electronic Technology, Inc. | Heterostructure with stress controlling layer |
US10950747B2 (en) * | 2015-07-01 | 2021-03-16 | Sensor Electronic Technology, Inc. | Heterostructure for an optoelectronic device |
FR3048547B1 (fr) | 2016-03-04 | 2018-11-09 | Saint-Gobain Lumilog | Procede de fabrication d'un substrat semi-conducteur |
US11047650B2 (en) | 2017-09-29 | 2021-06-29 | Saint-Gobain Ceramics & Plastics, Inc. | Transparent composite having a laminated structure |
US11302800B2 (en) | 2018-02-23 | 2022-04-12 | The Texas A&M University System | Fabrication of electronic devices using sacrificial seed layers |
JP6553765B1 (ja) * | 2018-03-20 | 2019-07-31 | 株式会社サイオクス | 結晶基板の製造方法および結晶基板 |
FR3091008B1 (fr) | 2018-12-21 | 2023-03-31 | Saint Gobain Lumilog | Substrat semi-conducteur avec couche intermédiaire dopée n |
FR3091020B1 (fr) | 2018-12-21 | 2023-02-10 | Saint Gobain Lumilog | SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n |
DE102019115351A1 (de) * | 2019-06-06 | 2020-12-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen |
FR3102776A1 (fr) | 2019-11-05 | 2021-05-07 | Saint-Gobain Lumilog | Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite |
FR3112238A1 (fr) * | 2020-07-06 | 2022-01-07 | Saint-Gobain Lumilog | Substrat semi-conducteur avec couche d’interface nitruree |
CN112820632B (zh) * | 2021-01-14 | 2024-01-09 | 镓特半导体科技(上海)有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
CN113161226A (zh) * | 2021-03-10 | 2021-07-23 | 无锡吴越半导体有限公司 | 一种基于等离子体cvd的氮化镓单结晶基板制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996041906A1 (en) * | 1995-06-13 | 1996-12-27 | Advanced Technology Materials, Inc. | Bulk single crystal gallium nitride and method of making same |
DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
JP2002511831A (ja) * | 1997-07-03 | 2002-04-16 | シービーエル テクノロジーズ | エピタキシャル蒸着により自立形基板を形成する熱的不整合の補償 |
CN100344004C (zh) * | 1997-10-30 | 2007-10-17 | 住友电气工业株式会社 | GaN单晶衬底及其制造方法 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP3788041B2 (ja) * | 1998-06-30 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
US6372041B1 (en) * | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
JP3545962B2 (ja) | 1999-03-23 | 2004-07-21 | 三菱電線工業株式会社 | GaN系化合物半導体結晶の成長方法及び半導体結晶基材 |
FR2835096B1 (fr) * | 2002-01-22 | 2005-02-18 | Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin | |
JP2002284600A (ja) * | 2001-03-26 | 2002-10-03 | Hitachi Cable Ltd | 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板 |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US6498113B1 (en) * | 2001-06-04 | 2002-12-24 | Cbl Technologies, Inc. | Free standing substrates by laser-induced decoherency and regrowth |
US6648966B2 (en) * | 2001-08-01 | 2003-11-18 | Crystal Photonics, Incorporated | Wafer produced thereby, and associated methods and devices using the wafer |
-
2003
- 2003-09-26 FR FR0311296A patent/FR2860248B1/fr not_active Expired - Fee Related
-
2004
- 2004-09-24 AT AT04787441T patent/ATE414189T1/de not_active IP Right Cessation
- 2004-09-24 US US10/573,463 patent/US7282381B2/en not_active Expired - Lifetime
- 2004-09-24 EP EP04787441A patent/EP1699951B1/de not_active Expired - Lifetime
- 2004-09-24 CN CNB2004800343701A patent/CN100387760C/zh not_active Expired - Fee Related
- 2004-09-24 WO PCT/FR2004/002416 patent/WO2005031045A2/fr active Application Filing
- 2004-09-24 JP JP2006527446A patent/JP4783288B2/ja not_active Expired - Fee Related
- 2004-09-24 KR KR1020067008056A patent/KR101154747B1/ko active IP Right Grant
- 2004-09-24 CA CA2540245A patent/CA2540245C/fr not_active Expired - Fee Related
- 2004-09-24 DE DE602004017781T patent/DE602004017781D1/de not_active Expired - Lifetime
- 2004-09-24 AU AU2004276541A patent/AU2004276541B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
WO2005031045A3 (fr) | 2005-05-26 |
WO2005031045A2 (fr) | 2005-04-07 |
CN100387760C (zh) | 2008-05-14 |
JP4783288B2 (ja) | 2011-09-28 |
CA2540245A1 (fr) | 2005-04-07 |
KR101154747B1 (ko) | 2012-06-08 |
FR2860248A1 (fr) | 2005-04-01 |
CA2540245C (fr) | 2012-02-14 |
AU2004276541B2 (en) | 2009-05-28 |
AU2004276541A1 (en) | 2005-04-07 |
JP2007506635A (ja) | 2007-03-22 |
CN1882720A (zh) | 2006-12-20 |
US7282381B2 (en) | 2007-10-16 |
FR2860248B1 (fr) | 2006-02-17 |
EP1699951B1 (de) | 2008-11-12 |
KR20060079249A (ko) | 2006-07-05 |
EP1699951A2 (de) | 2006-09-13 |
US20070072396A1 (en) | 2007-03-29 |
DE602004017781D1 (de) | 2008-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE414189T1 (de) | Verfahren zur herstellung von selbsttragenden substraten, die iii-nitride umfassen, mittels heteroepitaxie auf einer opferschicht | |
ATE500358T1 (de) | Verfahren zur herstellung einer epitaktischen schicht aus gallium nitrid | |
ATE483043T1 (de) | Verfahren zur zucht von gan-einkristallen | |
ATE524577T1 (de) | Verfahren zur herstellung einer epitaktisch aufgewachsenen schicht | |
DE60336543D1 (de) | Verfahren zur Herstellung einer heteroepitaktischen Mikrostruktur | |
ATE525499T1 (de) | Verfahren zur herstellung eines films aus galliumnitrid mit niedriger fehlerdichte durch dampfphaseepitaxie | |
TW200501462A (en) | Method to produce semiconductor-chips | |
EP1479795A4 (de) | Verfahren zur herstellung eines gruppe-iii-nitrid-verbindungshalbleiters | |
WO2007091920A3 (en) | A method of growing semiconductor heterostructures based on gallium nitride | |
WO2006130622A3 (en) | Growth of planar non-polar{1-1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) | |
TW200510252A (en) | Semiconductor layer | |
EP1245702A3 (de) | Verfahren zur Herstellung eines kristallinen Galliumnitridsubstrats | |
DE602004013172D1 (de) | Verfahren zur Synthese von Filamentstrukturen im Nanometerbereich und elektronische Bauteile mit derartigen Strukturen | |
TW200801255A (en) | Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby | |
EP1111663A3 (de) | Galliumnitrid-Verbindungshalbleiterbauelement und Herstellungsverfahren | |
DE602004025479D1 (de) | Verfahren zur Verringerung von Stapelfehler-Keimstellen in bipolaren Siliziumkarbid-bauelementen | |
EP2037013A3 (de) | Verfahren zur Herstellung eines Substrats zum Züchten von Galliumnitrid und Herstellungsverfahren für Galliumnitrid-Substrat | |
EP0966047A3 (de) | GaN-Einkristallinessubstrat und Herstellungsverfahren | |
ATE556158T1 (de) | Verfahren zur herstellung eines selbsttragenden nitridhalbleitersubstrats | |
ATE546568T1 (de) | Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern | |
EP2058419A8 (de) | Verfahren zur abtrennung einer oberflächenschicht oder wachstumsschicht von diamant | |
DE60323098D1 (de) | Verfahren zur Herstellung vonn Substraten für epitakitisches Wachstum | |
ATE314728T1 (de) | Verfahren zur herstellung einer schicht aus silizium karbid oder aus einer gruppe iii-nitrid auf ein angepasstes substrat | |
EP1445355A3 (de) | Verfahren zur Kristallzüchtung eines Nitrid-Halbleiters | |
ATE555057T1 (de) | Verfahren zur herstellung einer mikrostruktur von kristallinem sic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |