UA96952C2 - УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ - Google Patents

УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ

Info

Publication number
UA96952C2
UA96952C2 UAA200902529A UAA200902529A UA96952C2 UA 96952 C2 UA96952 C2 UA 96952C2 UA A200902529 A UAA200902529 A UA A200902529A UA A200902529 A UAA200902529 A UA A200902529A UA 96952 C2 UA96952 C2 UA 96952C2
Authority
UA
Ukraine
Prior art keywords
sapphire single
production
wafer
plate
single crystal
Prior art date
Application number
UAA200902529A
Other languages
English (en)
Ukrainian (uk)
Inventor
Витали Татартченко
Кристофер Д. Джонс
Стивен А. Занелла
Джон В. Лочер
Фери Пранади
Original Assignee
Сейнт-Гобейн Серамикс Энд Пластикс, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сейнт-Гобейн Серамикс Энд Пластикс, Инк. filed Critical Сейнт-Гобейн Серамикс Энд Пластикс, Инк.
Publication of UA96952C2 publication Critical patent/UA96952C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23907—Pile or nap type surface or component
    • Y10T428/23986—With coating, impregnation, or bond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Предложен способ и устройство для изготовления монокристалла сапфира, ориентированного в С-плоскости. Такой способ и устройство могут использовать методику выращивания профильного кристалла с ограничением края и подпиткой расплава для получения монокристаллического материала, который демонстрирует низкую поликристалличность и/или низкую плотность дислокационных дефектов.
UAA200902529A 2006-09-22 2007-09-21 УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ UA96952C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82672306P 2006-09-22 2006-09-22

Publications (1)

Publication Number Publication Date
UA96952C2 true UA96952C2 (ru) 2011-12-26

Family

ID=38819679

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200902529A UA96952C2 (ru) 2006-09-22 2007-09-21 УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ

Country Status (12)

Country Link
US (3) US8652658B2 (ru)
EP (1) EP2082081B1 (ru)
JP (1) JP5702931B2 (ru)
KR (5) KR101225470B1 (ru)
CN (2) CN101522961B (ru)
AU (1) AU2007299677B2 (ru)
CA (1) CA2663382C (ru)
MX (1) MX2009003120A (ru)
RU (1) RU2436875C2 (ru)
TW (2) TWI472652B (ru)
UA (1) UA96952C2 (ru)
WO (1) WO2008036888A1 (ru)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
WO2008083081A2 (en) * 2006-12-28 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
RU2414550C1 (ru) * 2006-12-28 2011-03-20 Сэнт-Гобэн Керамикс Энд Пластикс, Инк. Сапфировая подложка (варианты)
WO2008083071A1 (en) * 2006-12-28 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Method of grinding a sapphire substrate
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
WO2011050170A2 (en) * 2009-10-22 2011-04-28 Advanced Renewable Energy Company Llc Crystal growth methods and systems
JP5729135B2 (ja) 2010-06-17 2015-06-03 株式会社Sumco サファイアシードおよびその製造方法、ならびにサファイア単結晶の製造方法
EP2596284A4 (en) * 2010-07-19 2015-04-29 Rensselaer Polytech Inst SOLIDS FULL-SUBSTANCE WHITE LIGHT SOURCE, METHOD FOR THE PRODUCTION THEREOF AND APPLICATIONS THEREOF
JP2013018678A (ja) * 2011-07-12 2013-01-31 Shinshu Univ 結晶育成用るつぼ及び結晶の育成方法
US9599787B2 (en) 2011-12-27 2017-03-21 Tera Xtal Technology Corporation Using sapphire lens to protect the lens module
US20150044447A1 (en) * 2012-02-13 2015-02-12 Silicon Genesis Corporation Cleaving thin layer from bulk material and apparatus including cleaved thin layer
US10052848B2 (en) * 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
TW201235518A (en) * 2012-03-06 2012-09-01 Tera Xtal Technology Corp Sapphire material and production method thereof
TWI557439B (zh) * 2012-05-28 2016-11-11 鴻海精密工業股份有限公司 紅外截止濾光片及鏡頭模組
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9945613B2 (en) 2012-09-20 2018-04-17 Apple Inc. Heat exchangers in sapphire processing
US9777397B2 (en) * 2012-09-28 2017-10-03 Apple Inc. Continuous sapphire growth
US9718249B2 (en) * 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
US10286487B2 (en) 2013-02-28 2019-05-14 Ipg Photonics Corporation Laser system and method for processing sapphire
TWI529265B (zh) * 2013-03-15 2016-04-11 聖高拜陶器塑膠公司 以斜角熱遮板製造藍寶石薄片之裝置及方法
DE102013004558B4 (de) 2013-03-18 2018-04-05 Apple Inc. Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US10328605B2 (en) 2014-02-04 2019-06-25 Apple Inc. Ceramic component casting
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US9956646B2 (en) 2014-02-28 2018-05-01 Ipg Photonics Corporation Multiple-beam laser processing using multiple laser beams with distinct wavelengths and/or pulse durations
US10343237B2 (en) 2014-02-28 2019-07-09 Ipg Photonics Corporation System and method for laser beveling and/or polishing
US9764427B2 (en) 2014-02-28 2017-09-19 Ipg Photonics Corporation Multi-laser system and method for cutting and post-cut processing hard dielectric materials
CN103849928A (zh) * 2014-03-19 2014-06-11 江苏苏博瑞光电设备科技有限公司 一种多片式导模法蓝宝石晶片生长工艺
WO2016033494A1 (en) 2014-08-28 2016-03-03 Ipg Photonics Corporation System and method for laser beveling and/or polishing
EP3186030B1 (en) 2014-08-28 2023-02-22 IPG Photonics Corporation Multi-laser system and method for cutting and post-cut processing hard dielectric materials
JP6142209B2 (ja) * 2015-06-22 2017-06-07 並木精密宝石株式会社 大型サファイア基板
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
JP2017077986A (ja) * 2015-10-20 2017-04-27 並木精密宝石株式会社 サファイア単結晶とその製造方法
JP6025080B1 (ja) * 2015-12-26 2016-11-16 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造
AT16098U1 (de) * 2017-05-03 2019-01-15 Plansee Se Glasschmelzkomponente
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
US20210017667A1 (en) * 2017-12-07 2021-01-21 Kyocera Corporation Single crystal, die for efg apparatus, efg apparatus, method for manufacturing single crystal, and method for manufacturing single crystal member
JP7477997B2 (ja) * 2019-03-25 2024-05-02 京セラ株式会社 サファイアリボンおよび単結晶リボン製造装置
US11269374B2 (en) 2019-09-11 2022-03-08 Apple Inc. Electronic device with a cover assembly having an adhesion layer
CN113913924A (zh) * 2021-09-08 2022-01-11 杭州富加镓业科技有限公司 一种氧化镓单晶生长装置
CN116200823B (zh) * 2022-12-09 2024-04-16 奕瑞新材料科技（太仓）有限公司 一种晶体生长装置及碘化铯晶体生长方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3608050A (en) * 1969-09-12 1971-09-21 Union Carbide Corp Production of single crystal sapphire by carefully controlled cooling from a melt of alumina
US3915662A (en) * 1971-05-19 1975-10-28 Tyco Laboratories Inc Method of growing mono crystalline tubular bodies from the melt
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere
JPS5532021B2 (ru) * 1974-10-26 1980-08-22
US3953174A (en) * 1975-03-17 1976-04-27 Tyco Laboratories, Inc. Apparatus for growing crystalline bodies from the melt
US4303465A (en) * 1976-10-14 1981-12-01 Bagdasarov Khachik S Method of growing monocrystals of corundum from a melt
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
AT391887B (de) * 1977-07-21 1990-12-10 Pelts Boris Bentsionovich Ing Verfahren zum herstellen von kristallinen saphirrohren und einrichtung zu dessen durchfuehrung
US4325917A (en) * 1977-07-21 1982-04-20 Pelts Boris B Method and apparatus for producing sapphire tubes
US4248645A (en) * 1978-09-05 1981-02-03 Mobil Tyco Solar Energy Corporation Method for reducing residual stresses in crystals
US4271129A (en) 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
JPS5659693A (en) * 1979-10-23 1981-05-23 Ricoh Co Ltd Beltlike crystal manufacturing apparatus
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
JPS5795899A (en) 1980-12-09 1982-06-14 Toshiba Ceramics Co Ltd Correcting method for deformed sapphire single crystal sheet
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
US4402786A (en) * 1981-09-01 1983-09-06 Mobil Solar Energy Corporation Adjustable heat shield assembly
EP0608213A1 (en) * 1990-07-10 1994-08-03 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
US5164041A (en) 1991-01-04 1992-11-17 At&T Bell Laboratories Method of growing rare earth doped orthosilicates(ln2-xrexsio5)
JPH05186297A (ja) * 1992-01-08 1993-07-27 Tosoh Corp 高品位チタンサファイア単結晶の製造方法
US5451553A (en) * 1993-09-24 1995-09-19 General Electric Company Solid state thermal conversion of polycrystalline alumina to sapphire
US5660627A (en) * 1994-10-27 1997-08-26 Schlumberger Technology Corporation Method of growing lutetium oxyorthosilicate crystals
US5558712A (en) * 1994-11-04 1996-09-24 Ase Americas, Inc. Contoured inner after-heater shield for reducing stress in growing crystalline bodies
US6177236B1 (en) * 1997-12-05 2001-01-23 Xerox Corporation Method of making a pixelized scintillation layer and structures incorporating same
US6413311B2 (en) * 1998-04-16 2002-07-02 Cti, Inc. Method for manufacturing a cerium-doped lutetium oxyorthosilicate scintillator boule having a graded decay time
NO327757B1 (no) * 1998-12-28 2009-09-14 Kyocera Corp LCD-anordning
JP2003112998A (ja) 2001-09-28 2003-04-18 Furuya Kinzoku:Kk 単結晶製造用坩堝
US20030183161A1 (en) * 2002-03-29 2003-10-02 Japan Super Quartz Corporation Surface modified quartz glass crucible and its modification process
JP2003327495A (ja) * 2002-05-14 2003-11-19 Namiki Precision Jewel Co Ltd 晶癖面サファイヤ板材及びその製造方法
JP2004083407A (ja) * 2002-08-24 2004-03-18 Carl Zeiss Stiftung コランダム単結晶を成長させる方法および装置
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
DE102004010377A1 (de) * 2004-03-03 2005-09-22 Schott Ag Herstellung von Substratwafern für defektarme Halbleiterbauteile, ihre Verwendung, sowie damit erhaltene Bauteile
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
WO2006012924A1 (en) * 2004-08-05 2006-02-09 Pusch, Bernard Method of growing single crystals from melt
JP2006176359A (ja) * 2004-12-22 2006-07-06 Tdk Corp 単結晶の製造装置及び製造方法

Also Published As

Publication number Publication date
KR101498520B1 (ko) 2015-03-04
JP5702931B2 (ja) 2015-04-15
AU2007299677A1 (en) 2008-03-27
CA2663382A1 (en) 2008-03-27
KR101353277B1 (ko) 2014-01-22
KR20130016410A (ko) 2013-02-14
KR101225470B1 (ko) 2013-01-24
CN101522961A (zh) 2009-09-02
CN101522961B (zh) 2013-04-10
CN102965729A (zh) 2013-03-13
TW201200644A (en) 2012-01-01
KR20130016409A (ko) 2013-02-14
KR20090055644A (ko) 2009-06-02
KR101230279B1 (ko) 2013-02-06
CA2663382C (en) 2012-04-24
RU2009114547A (ru) 2010-10-27
TWI472652B (zh) 2015-02-11
US20140116323A1 (en) 2014-05-01
TW200827500A (en) 2008-07-01
JP2010504274A (ja) 2010-02-12
RU2436875C2 (ru) 2011-12-20
MX2009003120A (es) 2009-04-06
US8652658B2 (en) 2014-02-18
US20080075941A1 (en) 2008-03-27
KR101298965B1 (ko) 2013-08-23
US20170226659A1 (en) 2017-08-10
EP2082081A1 (en) 2009-07-29
EP2082081B1 (en) 2015-05-06
AU2007299677B2 (en) 2011-05-12
KR20110093922A (ko) 2011-08-18
WO2008036888A1 (en) 2008-03-27
TWI388700B (zh) 2013-03-11
KR20110134935A (ko) 2011-12-15

Similar Documents

Publication Publication Date Title
UA96952C2 (ru) УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ
WO2009067641A3 (en) R-plane sapphire method and apparatus
TW200700596A (en) Low basal plane dislocation bulk grown SIC wafers
WO2004061896A3 (en) Method and apparatus for producing monocrystalline ain
TW200735203A (en) Technique for the growth of planar semi-polar gallium nitride
WO2009039398A8 (en) Gallium nitride bulk crystals and their growth method
EP2314737A3 (en) Method of producing high purity semi-insulating single crystal silicon carbide wafer
TW200833883A (en) Process for producing group III nitride crystal, group III nitride crystal substrate, and group III nitride semiconductor device
WO2008063444A3 (en) Gallium nitride crystals and wafers
AU2002339906A1 (en) Method for growing low-defect single crystal heteroepitaxial films
EP1598452A4 (en) SILICON WAFER, METHOD OF MANUFACTURING THEREOF, AND METHOD OF PULLING A SILICON INK CRYSTAL
WO2005122267A8 (en) Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
TW200833882A (en) Gallium nitride crystal and method of making same
EP2264223A3 (en) Micropipe-free silicon carbide and related method of manufacture
TW200632154A (en) Process for producing high quality large size silicon carbide crystals
TWI265984B (en) Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
EP1114885A4 (en) WITH Ga Doped CZOCHRALSKI SINGLE CRYSTAL AND WAFER AND METHOD FOR THEIR PRODUCTION
MX2010003103A (es) Metodo para cosechar algas o plantas y dispositivo utilizado por el mismo.
AU2002320277A1 (en) Method and apparatus for growing semiconductor crystals with a rigid support
EP1703550A4 (en) VAPOR PHASE GROWTH DEVICE AND METHOD FOR PRODUCING EPITAXIAL WAFER
EP1508632A4 (en) CDTE MONOCRYSTAL AND POLYCRISTAL CDTE AND PROCESS FOR THE PRODUCTION THEREOF
TW200605404A (en) Group III nitride crystal and its manufacturing method, group III nitride crystal substrate, and semiconductor device
EP1485524A4 (en) APPARATUS FOR THE CRYSTALLOGENESIS OF MONOCRYSTALLINE II-VI AND III-V COMPOUNDS
TW200736421A (en) Gallium nitride crystal substrate and method of producing same
TW200631894A (en) A method of improving the crystalline perfection of diamond crystals